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51. 发明授权

US07064753B2 Image generating method, storage medium, image generating apparatus, data signal and program 有权
标题翻译：图像生成方法，存储介质，图像生成装置，数据信号和程序
公开(公告)号：US07064753B2
公开(公告)日：2006-06-20
申请号：US10661675
申请日：2003-09-15
申请人： Yasuo Ohba , Akinari Kaneko , Hiroki Nagaoka
发明人： Yasuo Ohba , Akinari Kaneko , Hiroki Nagaoka
IPC分类号： G06T15/00
CPC分类号： G06T15/50 , G06T15/02
摘要： An image generating method for producing a pictorial image at higher speed when a three-dimensional object is arranged in an object space. The image generating method has: operating a normal line to a surface of a three-dimensional object; setting a plurality of sampling points within a rendering region on which the three-dimensional object is projected on the basis of a predetermined viewpoint; and rendering the three-dimensional object by performing processing for determining an arrangement angle of a predetermined brush image on the basis of the normal line at a position on the surface of the three-dimensional object, corresponding to each of the plurality of sampling points, and arranging the predetermined brush image at the arrangement angle at the position corresponding to each of the plurality of sampling points in the rendering buffer.
摘要翻译：一种用于当将三维物体布置在物体空间中时以较高速度产生图形图像的图像产生方法。图像生成方法具有：对三维物体的表面进行法线的操作; 基于预定视点，在其上投影有三维物体的渲染区域内设置多个采样点; 以及通过执行用于基于与所述多个采样点中的每一个对应的所述三维物体的表面上的位置处的所述法线来确定预定画笔图像的排列角度的处理来呈现所述三维物体，以及在与所述再现缓冲器中的所述多个采样点中的每一个相对应的位置处以所述排列角度布置所述预定画笔图像。

52. 再颁专利

USRE38805E1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：USRE38805E1
公开(公告)日：2005-10-04
申请号：US09915710
申请日：2001-07-27
申请人： Yasuo Ohba , Ako Hatano
发明人： Yasuo Ohba , Ako Hatano
IPC分类号： H01L29/201 , H01L29/205 , H01L31/0304 , H01L33/00 , H01L33/32 , H01S5/02 , H01S5/042 , H01S5/323
CPC分类号： H01L33/32 , H01L29/201 , H01L29/205 , H01L33/007 , H01S5/0208 , H01S5/0425 , H01S5/32341
摘要： A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al1-x-yGaxInyN (0≦x≦1, 0≦y≦1, x+y≦1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al1-s-tGasIntN (0≦s≦1, 0≦t≦1, s+t≦1) and is formed on a surface of the substrate such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. A method of fabricating a semiconductor device comprises the steps of: forming, above an Al1-x-yGaxInyN (0≦x≦1, 0≦y≦1, x+y≦1) semiconductor layer doped with a p-type dopant, a cap layer for preventing evaporation of a constituent element of the semiconductor layer, the cap layer being formed of one of AlN in which a p-type dopant is added and Al2O3, subjecting the semiconductor layer to heat treatment, and removing at least a part of the cap layer.
摘要翻译：半导体器件包括单晶衬底，形成在单晶衬底上的核形成缓冲层，以及包括多个Al 1-x Ga x In In 在层形成缓冲层之上层叠的层（N，O，X，Y，Y，Y，Y）。核形成缓冲层由Al 1-N 3 N（0≤s≤1,0<= 1）构成， t <= 1，s + t <= 1），并且形成在基板的表面上，使得核形成缓冲层具有用于控制极性和形成核的多个针孔。一种制造半导体器件的方法包括以下步骤：在Al 2 O 3（0 < 掺杂有p型掺杂剂的半导体层，用于防止半导体层的构成元素的蒸发的盖层，形成帽盖层的半导体层，x <= 1，0 <= y <= 1，x + y < 其中添加了p型掺杂剂的AlN和Al 2 O 3 3，对半导体层进行热处理，并除去至少一部分盖层。

53. 发明授权

US5990495A Semiconductor light-emitting element and method for manufacturing the same 失效
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US5990495A
公开(公告)日：1999-11-23
申请号：US683381
申请日：1996-07-18
申请人： Yasuo Ohba
发明人： Yasuo Ohba
IPC分类号： H01L33/12 , H01L33/14 , H01L33/32 , H01L33/36 , H01S5/00 , H01S5/323 , H01L33/00
CPC分类号： H01L33/32 , H01L33/007
摘要： A semiconductor light-emitting element comprising a monocrystal substrate; a buffer layer formed directly on the monocrystal substrate and comprising a monocrystal Al.sub.x Ga.sub.1-x N layer (0
摘要翻译：一种包含单晶衬底的半导体发光元件; 直接形成在单晶衬底上并包含单晶Al x Ga 1-x N层（0

54. 发明授权

US5929466A Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5929466A
公开(公告)日：1999-07-27
申请号：US874299
申请日：1997-06-13
申请人： Yasuo Ohba , Ako Hatano
发明人： Yasuo Ohba , Ako Hatano
IPC分类号： H01L29/201 , H01L29/205 , H01L31/0304 , H01L33/00 , H01L33/32 , H01S5/02 , H01S5/042 , H01S5/323
CPC分类号： H01L33/32 , H01L29/201 , H01L29/205 , H01L33/007 , H01S5/32341 , H01S5/0208 , H01S5/0425
摘要： A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al.sub.1-s-t Ga.sub.s In.sub.t N (0.ltoreq.s.ltoreq.1, 0.ltoreq.t.ltoreq.1, s+t.ltoreq.1) and is formed on a surface of the substrate such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. A method of fabricating a semiconductor device comprises the steps of: forming, above an Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer doped with a p-type dopant, a cap layer for preventing evaporation of a constituent element of the semiconductor layer, the cap layer being formed of one of AlN in which a p-type dopant is added and A1.sub.2 O.sub.3, subjecting the semiconductor layer to heat treatment, and removing at least a part of the cap layer.
摘要翻译：半导体器件包括单晶衬底，形成在单晶衬底上的核形成缓冲层，以及包括多个Al1-x-yGaxInyN（0≤x≤1,0

55. 发明授权

US5656832A Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness 失效
标题翻译：半导体异质结装置，具有3nm-10nm平均膜厚度的ALN缓冲层
公开(公告)号：US5656832A
公开(公告)日：1997-08-12
申请号：US400865
申请日：1995-03-08
申请人： Yasuo Ohba , Ako Hatano
发明人： Yasuo Ohba , Ako Hatano
IPC分类号： H01L29/201 , H01L29/205 , H01L31/0304 , H01L33/00 , H01L33/32 , H01S5/02 , H01S5/042 , H01S5/323 , H01L27/15 , H01S3/19
CPC分类号： H01L33/32 , H01L29/201 , H01L29/205 , H01L33/007 , H01S5/32341 , H01S5/0208 , H01S5/0425
摘要： A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al.sub.1-s-t Ga.sub.s In.sub.t N (0.ltoreq.s .ltoreq.1, 0.ltoreq.t.ltoreq.1, s+t.ltoreq.1) and is formed on a surface of the substrate such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. A method of fabricating a semiconductor device comprises the steps of: forming, above an Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer doped with a p-type dopant, a cap layer for preventing evaporation of a constituent element of the semiconductor layer, the cap layer being formed of one of AlN in which a p-type dopant is added and Al.sub.2 O.sub.3, subjecting the semiconductor layer to heat treatment, and removing at least a part of the cap layer.
摘要翻译：半导体器件包括单晶衬底，形成在单晶衬底上的核形成缓冲层，以及包括多个Al1-x-yGaxInyN（0≤x≤1,0

56. 发明授权

US5228044A Ultraviolet semiconductor laser and method of manufacturing the same 失效
标题翻译： ULTRAVIOLET SEMICONDUCTOR LASER及其制造方法
公开(公告)号：US5228044A
公开(公告)日：1993-07-13
申请号：US735279
申请日：1991-07-24
申请人： Yasuo Ohba
发明人： Yasuo Ohba
IPC分类号： H01S5/00 , H01S5/32 , H01S5/34
CPC分类号： H01L33/26 , B82Y20/00 , H01L33/002 , H01S5/32 , H01S5/34
摘要： A BN layer having a zinc blend type crystal structure and a BeCN.sub.2 layer having a chalcopyrite type crystal structure are stacked on a substrate via a BP buffer layer, thereby constituting a heterojunction. This heterojunction is used to form an ultraviolet semiconductor laser and other new semiconductor devices such as an LED.

57. 发明授权

US5036521A Semiconductor laser device 失效
公开(公告)号：US5036521A
公开(公告)日：1991-07-30
申请号：US439428
申请日：1989-11-21
申请人： Genichi Hatakoshi , Kazuhiko Itaya , Shigeya Naritsuka , Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Yukio Watanabe , Yasuo Ohba , Yoshihiro Kokubun , Yutaka Uematsu
发明人： Genichi Hatakoshi , Kazuhiko Itaya , Shigeya Naritsuka , Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Yukio Watanabe , Yasuo Ohba , Yoshihiro Kokubun , Yutaka Uematsu
IPC分类号： H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32325 , H01S5/2004 , H01S5/2231 , H01S5/3211
摘要： In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2

58. 发明授权

US07327364B2 Method and apparatus for rendering three-dimensional images of objects with hand-drawn appearance in real time 有权
标题翻译：用于实时绘制手绘外观的物体的三维图像的方法和装置
公开(公告)号：US07327364B2
公开(公告)日：2008-02-05
申请号：US10661645
申请日：2003-09-15
申请人： Yasuo Ohba , Akinari Kaneko , Hiroki Nagaoka
发明人： Yasuo Ohba , Akinari Kaneko , Hiroki Nagaoka
IPC分类号： G06T15/50
CPC分类号： G06T15/02 , A63F2300/6692 , G06T15/60 , G06T15/80
摘要： An image generating method for producing a pictorial image at higher speed when a three-dimensional object is arranged in an object space. The image generating method has: generating at least one of retouched image of a three-dimensional image by arranging a plurality of brush images so as to superpose a part of the plurality of brush images on one another part of the plurality of brush images within a rendering region on which the three-dimensional object is projected on the basis of a predetermined viewpoint; generating a projection image by projecting the three-dimensional object on the basis of the predetermined viewpoint; and rendering an image of the three-dimensional object so as to reflect color information of the projection image at a part at which the retouched image is transparent by synthesizing the retouched image with the projection image.
摘要翻译：一种用于当将三维物体布置在物体空间中时以较高速度产生图形图像的图像产生方法。图像生成方法具有：通过布置多个画笔图像来生成三维图像的修饰图像中的至少一个，以便将多个画笔图像的一部分叠加在多个画笔图像的另一部分上基于预定视点投影三维物体的渲染区域; 通过基于预定视点投影三维物体来产生投影图像; 以及渲染所述三维物体的图像，以便通过用所述投影图像合成所述经过修饰的图像，来反映在所述润饰图像透明的部分处的所述投影图像的颜色信息。

59. 发明申请

US20070034883A1 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US20070034883A1
公开(公告)日：2007-02-15
申请号：US11441149
申请日：2006-05-26
申请人： Yasuo Ohba
发明人： Yasuo Ohba
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L27/15 , H01L33/32 , H01L33/504 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014
摘要： A light emitting device includes a transparent substrate having first and second surfaces, a semiconductor layer provided on the first surface, a first light emission layer provided on the semiconductor layer and emitting first ultraviolet light including a wavelength corresponding to an energy larger than a forbidden bandwidth of a semiconductor of the semiconductor layer, a second light emission layer provided between the first light emission layer and the semiconductor layer, absorbing the first ultraviolet light emitted from the first light emission layer, and emitting second ultraviolet light including a wavelength corresponding to an energy smaller than the forbidden bandwidth of the semiconductor of the semiconductor layer, and first and second electrodes provided to apply electric power to the first light emission layer.
摘要翻译：发光装置包括具有第一表面和第二表面的透明基板，设置在第一表面上的半导体层，设置在半导体层上的第一发光层，并且发射包括对应于大于禁止带宽的能量的波长的第一紫外线设置在所述第一发光层和所述半导体层之间的第二发光层，吸收从所述第一发光层发射的所述第一紫外线，以及发射包括对应于能量的波长的第二紫外线小于半导体层的半导体的禁止带宽，以及设置成向第一发光层施加电力的第一和第二电极。

60. 发明授权

US05998810A Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer 失效
标题翻译：具有形成在发光层上的p型半导体层的半导体发光二极管
公开(公告)号：US05998810A
公开(公告)日：1999-12-07
申请号：US980256
申请日：1997-11-28
申请人： Ako Hatano , Yasuo Ohba , Hidetoshi Fujimoto , Kazuhiko Itaya , Johji Nishio
发明人： Ako Hatano , Yasuo Ohba , Hidetoshi Fujimoto , Kazuhiko Itaya , Johji Nishio
IPC分类号： H01S5/323 , H01L33/00
CPC分类号： H01S5/32341 , H01S2302/00
摘要： A semiconductor light-emitting diode exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor light-emitting diode is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.
摘要翻译：表现出450nm以下的振荡波长的半导体发光二极管，其特征在于，具有基板，形成在所述基板上或上方的下部包层，主要由III-V族化合物半导体构成，所述活性层直接形成在所述下部主要由III-V族化合物半导体构成的上层p型覆盖层和主要由III-V族化合物半导体构成的有源层上直接形成的上部p型覆盖层。该半导体发光二极管的特征在于，上p型覆盖层含有Mg，Si和至少一种用于补偿残留供体的杂质。

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