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1. 发明授权

US05998810A Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer 失效
标题翻译：具有形成在发光层上的p型半导体层的半导体发光二极管
公开(公告)号：US05998810A
公开(公告)日：1999-12-07
申请号：US980256
申请日：1997-11-28
申请人： Ako Hatano , Yasuo Ohba , Hidetoshi Fujimoto , Kazuhiko Itaya , Johji Nishio
发明人： Ako Hatano , Yasuo Ohba , Hidetoshi Fujimoto , Kazuhiko Itaya , Johji Nishio
IPC分类号： H01S5/323 , H01L33/00
CPC分类号： H01S5/32341 , H01S2302/00
摘要： A semiconductor light-emitting diode exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor light-emitting diode is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.
摘要翻译：表现出450nm以下的振荡波长的半导体发光二极管，其特征在于，具有基板，形成在所述基板上或上方的下部包层，主要由III-V族化合物半导体构成，所述活性层直接形成在所述下部主要由III-V族化合物半导体构成的上层p型覆盖层和主要由III-V族化合物半导体构成的有源层上直接形成的上部p型覆盖层。该半导体发光二极管的特征在于，上p型覆盖层含有Mg，Si和至少一种用于补偿残留供体的杂质。

2. 发明授权

US5042043A Semiconductor laser using five-element compound semiconductor 失效
标题翻译：半导体激光器采用五元素化合物半导体
公开(公告)号：US5042043A
公开(公告)日：1991-08-20
申请号：US508694
申请日：1990-04-13
申请人： Ako Hatano , Toshihide Izumiya , Yasuo Ohba
发明人： Ako Hatano , Toshihide Izumiya , Yasuo Ohba
IPC分类号： H01L21/205 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/32 , H01S5/00 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/32 , H01S5/343 , H01S2302/00 , H01S5/3201 , H01S5/321 , H01S5/3216 , H01S5/32308 , H01S5/32341 , H01S5/34333
摘要： A green light-emitting semiconductor laser using a superlattice layer wherein BP layers and Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers are alternately stacked and each of the Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers has a zinc blende type crystal structure, or a Ga.sub.x Al.sub.y B.sub.1-x-y N.sub.z P.sub.1-z (0.ltoreq.x, y, z.ltoreq.1) mixed crystal layers with a zinc blende type structure a first clad layer of a first conductivity type, an active layer, and a second clad layer of a second conductivity type, together constituting a double heterojunction.

3. 再颁专利

USRE38805E1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：USRE38805E1
公开(公告)日：2005-10-04
申请号：US09915710
申请日：2001-07-27
申请人： Yasuo Ohba , Ako Hatano
发明人： Yasuo Ohba , Ako Hatano
IPC分类号： H01L29/201 , H01L29/205 , H01L31/0304 , H01L33/00 , H01L33/32 , H01S5/02 , H01S5/042 , H01S5/323
CPC分类号： H01L33/32 , H01L29/201 , H01L29/205 , H01L33/007 , H01S5/0208 , H01S5/0425 , H01S5/32341
摘要： A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al1-x-yGaxInyN (0≦x≦1, 0≦y≦1, x+y≦1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al1-s-tGasIntN (0≦s≦1, 0≦t≦1, s+t≦1) and is formed on a surface of the substrate such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. A method of fabricating a semiconductor device comprises the steps of: forming, above an Al1-x-yGaxInyN (0≦x≦1, 0≦y≦1, x+y≦1) semiconductor layer doped with a p-type dopant, a cap layer for preventing evaporation of a constituent element of the semiconductor layer, the cap layer being formed of one of AlN in which a p-type dopant is added and Al2O3, subjecting the semiconductor layer to heat treatment, and removing at least a part of the cap layer.
摘要翻译：半导体器件包括单晶衬底，形成在单晶衬底上的核形成缓冲层，以及包括多个Al 1-x Ga x In In 在层形成缓冲层之上层叠的层（N，O，X，Y，Y，Y，Y）。核形成缓冲层由Al 1-N 3 N（0≤s≤1,0<= 1）构成， t <= 1，s + t <= 1），并且形成在基板的表面上，使得核形成缓冲层具有用于控制极性和形成核的多个针孔。一种制造半导体器件的方法包括以下步骤：在Al 2 O 3（0 < 掺杂有p型掺杂剂的半导体层，用于防止半导体层的构成元素的蒸发的盖层，形成帽盖层的半导体层，x <= 1，0 <= y <= 1，x + y < 其中添加了p型掺杂剂的AlN和Al 2 O 3 3，对半导体层进行热处理，并除去至少一部分盖层。

4. 发明授权

US5929466A Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5929466A
公开(公告)日：1999-07-27
申请号：US874299
申请日：1997-06-13
申请人： Yasuo Ohba , Ako Hatano
发明人： Yasuo Ohba , Ako Hatano
IPC分类号： H01L29/201 , H01L29/205 , H01L31/0304 , H01L33/00 , H01L33/32 , H01S5/02 , H01S5/042 , H01S5/323
CPC分类号： H01L33/32 , H01L29/201 , H01L29/205 , H01L33/007 , H01S5/32341 , H01S5/0208 , H01S5/0425
摘要： A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al.sub.1-s-t Ga.sub.s In.sub.t N (0.ltoreq.s.ltoreq.1, 0.ltoreq.t.ltoreq.1, s+t.ltoreq.1) and is formed on a surface of the substrate such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. A method of fabricating a semiconductor device comprises the steps of: forming, above an Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer doped with a p-type dopant, a cap layer for preventing evaporation of a constituent element of the semiconductor layer, the cap layer being formed of one of AlN in which a p-type dopant is added and A1.sub.2 O.sub.3, subjecting the semiconductor layer to heat treatment, and removing at least a part of the cap layer.
摘要翻译：半导体器件包括单晶衬底，形成在单晶衬底上的核形成缓冲层，以及包括多个Al1-x-yGaxInyN（0≤x≤1,0

5. 发明授权

US5656832A Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness 失效
标题翻译：半导体异质结装置，具有3nm-10nm平均膜厚度的ALN缓冲层
公开(公告)号：US5656832A
公开(公告)日：1997-08-12
申请号：US400865
申请日：1995-03-08
申请人： Yasuo Ohba , Ako Hatano
发明人： Yasuo Ohba , Ako Hatano
IPC分类号： H01L29/201 , H01L29/205 , H01L31/0304 , H01L33/00 , H01L33/32 , H01S5/02 , H01S5/042 , H01S5/323 , H01L27/15 , H01S3/19
CPC分类号： H01L33/32 , H01L29/201 , H01L29/205 , H01L33/007 , H01S5/32341 , H01S5/0208 , H01S5/0425
摘要： A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al.sub.1-s-t Ga.sub.s In.sub.t N (0.ltoreq.s .ltoreq.1, 0.ltoreq.t.ltoreq.1, s+t.ltoreq.1) and is formed on a surface of the substrate such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. A method of fabricating a semiconductor device comprises the steps of: forming, above an Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer doped with a p-type dopant, a cap layer for preventing evaporation of a constituent element of the semiconductor layer, the cap layer being formed of one of AlN in which a p-type dopant is added and Al.sub.2 O.sub.3, subjecting the semiconductor layer to heat treatment, and removing at least a part of the cap layer.
摘要翻译：半导体器件包括单晶衬底，形成在单晶衬底上的核形成缓冲层，以及包括多个Al1-x-yGaxInyN（0≤x≤1,0

6. 发明授权

US5740192A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5740192A
公开(公告)日：1998-04-14
申请号：US767673
申请日：1996-12-17
申请人： Ako Hatano , Yasuo Ohba , Hidetoshi Fujimoto , Kazuhiko Itaya , Johji Nishio
发明人： Ako Hatano , Yasuo Ohba , Hidetoshi Fujimoto , Kazuhiko Itaya , Johji Nishio
IPC分类号： H01S5/323 , H01S3/19 , H01L33/00
CPC分类号： H01S5/32341 , H01S2302/00
摘要： A semiconductor laser exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor laser is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.
摘要翻译：表现出450nm以下的振荡波长的半导体激光器，其特征在于，具有基板，形成在所述基板上或上方的主要由III-V族化合物半导体构成的下部包层，直接形成在所述下部包层上的有源层和主要由III-V族化合物半导体构成，上部p型覆盖层直接形成在主要由III-V族化合物半导体构成的有源层上。该半导体激光器的特征在于，上部p型覆盖层含有Mg，Si和用于补偿残余供体的至少一种杂质。

7. 发明授权

US5909040A Semiconductor device including quaternary buffer layer with pinholes 失效
标题翻译：半导体器件包括具有针孔的四元缓冲层
公开(公告)号：US5909040A
公开(公告)日：1999-06-01
申请号：US866056
申请日：1997-05-30
申请人： Yasuo Ohba , Ako Hatano
发明人： Yasuo Ohba , Ako Hatano
IPC分类号： H01L29/201 , H01L29/205 , H01L33/00 , H01L33/32 , H01S5/02 , H01S5/042 , H01S5/323 , H01L31/0304
CPC分类号： H01L29/201 , H01L29/205 , H01L33/007 , H01L33/32 , H01S5/32341 , H01S5/0208 , H01S5/0425
摘要： A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al.sub.1-s-t Ga.sub.s In.sub.t N (0.ltoreq.s.ltoreq.1, 0.ltoreq.t.ltoreq.1, s+t.ltoreq.1) and formed on a surface of the substrate with an average film thickness of 5 nm to 20 nm such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. The pinholes are formed among loosely formed small crystals of Al.sub.1-s-t Ga.sub.s In.sub.t N (0.ltoreq.s.ltoreq.1, 0.ltoreq.t.ltoreq.1, s+t.ltoreq.1).
摘要翻译：半导体器件包括单晶衬底，形成在单晶衬底上的核形成缓冲层，以及包括多个Al1-x-yGaxInyN（0≤x≤1,0）的小晶体中。

8. 发明授权

US5317167A Semiconductor light-emitting device with InGaAlp 失效
标题翻译：具有InGaAlp的半导体发光器件
公开(公告)号：US5317167A
公开(公告)日：1994-05-31
申请号：US59221
申请日：1993-05-10
申请人： Toshihide Izumiya , Yasuo Ohba , Ako Hatano
发明人： Toshihide Izumiya , Yasuo Ohba , Ako Hatano
IPC分类号： H01L33/00 , H01L33/30
CPC分类号： H01L33/30 , H01L33/0062
摘要： A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x, y.ltoreq.1) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.1-w Al.sub.w As (0.ltoreq.w.ltoreq.1) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer although its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.
摘要翻译：半导体发光器件包括由多个In x Ga y Al 1-x-y P（0

9. 发明授权

US5079184A Method of manufacturing III-IV group compound semiconductor device 失效
标题翻译：制备III-IV族化合物半导体器件的方法
公开(公告)号：US5079184A
公开(公告)日：1992-01-07
申请号：US538937
申请日：1990-06-15
申请人： Ako Hatano , Toshihide Izumiya , Yasuo Ohba
发明人： Ako Hatano , Toshihide Izumiya , Yasuo Ohba
IPC分类号： H01L21/205 , H01L33/00 , H01L33/06 , H01L33/30 , H01S5/223 , H01S5/227 , H01S5/30 , H01S5/323
CPC分类号： H01L33/305 , B82Y20/00 , H01L21/02392 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/0075 , H01L33/06 , H01S5/3235 , H01S5/2231 , H01S5/2275 , H01S5/3054 , H01S5/3063 , H01S5/32308 , H01S5/32325 , H01S5/32391 , Y10S438/918 , Y10S438/925
摘要： A magnesium-doped p-type III-V Group compound semiconductor layer can be formed by metal organic chemical vapor deposition, by reacting, in a vapor phase, at least one compound of a Group III element with at least one compound of a Group V element, in the presence of an adduct of an organic magnesium compound with another compound as a doping source of magnesium.

10. 发明授权

US5076860A AlGaN compound semiconductor material 失效
标题翻译： ALGAN化合物半导体材料
公开(公告)号：US5076860A
公开(公告)日：1991-12-31
申请号：US414520
申请日：1989-09-29
申请人： Yasuo Ohba , Toshihide Izumiya , Ako Hatano
发明人： Yasuo Ohba , Toshihide Izumiya , Ako Hatano
IPC分类号： H01L33/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/323 , H01S5/343
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/0062 , H01L33/007 , H01L33/0079 , H01L33/04 , H01L33/06 , H01S5/32341 , H01S5/343 , H01S5/34333 , Y10S148/065 , Y10S148/113
摘要： A compound semiconductor material includes Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) containing B and P and having a zinc blend type crystal structure. A compound semiconductor element includes Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) layer having a zinc blend type crystal structure. A method of manufacturing a compound semiconductor element includes the step of sequentially forming a BP layer and a Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) layer on a substrate so as to form a heterojunction by using a metal organic chemical vapor deposition apparatus having a plurality of reaction regions, and moving the substrate between the plurality of reaction regions.

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