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51. 发明申请

US20120331428A1 METHOD FOR DESIGNING OPTICAL LITHOGRAPHY MASKS FOR DIRECTED SELF-ASSEMBLY 有权
标题翻译：用于指导自组装的光学绘图掩模的方法
公开(公告)号：US20120331428A1
公开(公告)日：2012-12-27
申请号：US13606055
申请日：2012-09-07
申请人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Jed Walter Pitera , Charles Thomas Rettner , Daniel Paul Sanders , Da Yang
发明人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Jed Walter Pitera , Charles Thomas Rettner , Daniel Paul Sanders , Da Yang
IPC分类号： G06F17/50
CPC分类号： G03F1/38 , B82Y10/00 , B82Y40/00 , G03F1/00 , G03F7/0002
摘要： A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.
摘要翻译：一种用于设计光学掩模的方法和计算机系统，用于在基底上的光致抗蚀剂层中形成预模式开口，其中光致抗蚀剂层和预图案开口用自组装材料涂覆，所述自组装材料经过定向自组装以形成定向自身装配模式所述方法包括：从目标设计形状生成掩模设计形状; 基于掩模设计形状产生子分辨率辅助特征设计形状; 使用计算机基于子分辨率辅助特征设计形状生成预绘图形状; 并且使用计算机来评估基于预图案形状的自组装材料的定向自组装图案是否在基板上的目标设计形状的尺寸和位置目标的指定范围内。

52. 发明申请

US20120092633A1 REFLECTIVE FILM INTERFACE TO RESTORE TRANSVERSE MAGNETIC WAVE CONTRAST IN LITHOGRAPHIC PROCESSING 有权
标题翻译：反射膜界面恢复光刻处理中的横向磁波对比
公开(公告)号：US20120092633A1
公开(公告)日：2012-04-19
申请号：US13324092
申请日：2011-12-13
申请人： Kafai Lai , Dirk Pfeiffer , Alan E. Rosenbluth
发明人： Kafai Lai , Dirk Pfeiffer , Alan E. Rosenbluth
IPC分类号： G03B27/42
CPC分类号： G03F7/70216
摘要： A system for exposing a resist layer to an image that includes a layer reflective to imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer. An imaging tool projects radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist and reflecting back to the resist to form an interference pattern of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity.
摘要翻译：一种用于将抗蚀剂层暴露于包括反射成像工具辐射的层的图像和在反射层上具有光敏区域的抗蚀剂层的系统。成像工具将包含空间图像的辐射投射到抗蚀剂层上，其中包含空间图像的辐射的一部分穿过抗蚀剂并反射回抗蚀剂，以形成通过抗蚀剂层厚度的投影空间图像的干涉图案。光敏层的抗蚀剂层区域的厚度和位置被选择为在干涉图形之中包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分，并且排除抗蚀剂厚度方向上的干涉图案的较低对比度部分从所述抗蚀剂层区域的光敏性，改善所述抗蚀剂层区域中的空间像的光敏性的对比度。

53. 发明申请

US20120077130A1 METHOD FOR GENERATING A PLURALITY OF OPTIMIZED WAVEFRONTS FOR A MULTIPLE EXPOSURE LITHOGRAPHIC PROCESS 失效
标题翻译：一种用于多次曝光的光刻过程产生多重优化波形的方法
公开(公告)号：US20120077130A1
公开(公告)日：2012-03-29
申请号：US12890854
申请日：2010-09-27
申请人： Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
发明人： Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
IPC分类号： G03F7/20 , G06F17/50
CPC分类号： G03F7/70466 , G03F1/70
摘要： A simplified version of a multiexpose mask optimization problem is solved in order to find a compressed space in which to search for the solution to the full problem formulation. The simplification is to reduce the full problem to an unconstrained formulation. The full problem of minimizing dark region intensity while maintaining intensity above threshold at each bright point can be converted to the unconstrained problem of minimizing average dark region intensity per unit of average intensity in the bright regions. The extrema solutions to the simplified problem can be obtained for each source. This set of extrema solutions is then assessed to determine which features are predominantly printed by which source. A minimal set of extrema solutions serves as a space of reduced dimensionality within which to maximize the primary objective under constraints. The space typically has reduced dimensionality through selection of highest quality extrema solutions.
摘要翻译：解决了一个简化版本的多功能面罩优化问题，以便找到一个压缩空间，在该空间中搜索解决问题的全部问题。简化是将完整的问题减少到无约束的公式。将每个亮点处的强度保持在阈值以上的暗区强度最小化的问题可以转化为明亮区域每单位平均强度平均暗区强度最小化的无约束问题。可以为每个源获得简化问题的极值解。然后评估这组极值解决方案，以确定哪些特征主要由哪个来源打印。最小的一组极值解决方案作为减小维数的空间，在这个空间内可以在约束条件下最大化主要目标。该空间通常通过选择最高质量的极值解决方案降低维度。

54. 发明授权

US07860701B2 Methodology for image fidelity verification 有权
标题翻译：图像保真度验证方法
公开(公告)号：US07860701B2
公开(公告)日：2010-12-28
申请号：US11942309
申请日：2007-11-19
申请人： Ioana Graur , Kafai Lai , Rama N. Singh
发明人： Ioana Graur , Kafai Lai , Rama N. Singh
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： A method for predicting functionality of an integrated circuit segment to be lithographically printed on a wafer. Initially there is provided a two-dimensional design of an integrated circuit, including an integrated circuit segment having critical width, and a two-dimensional printed image of the critical width integrated circuit segment is simulated. The method then includes determining a ratio of perimeters or areas of the designed critical width integrated circuit segment to the simulated printed critical width integrated circuit segment, and predicting functionality of the critical width integrated circuit segment after printing based on the ratio of perimeters or areas.
摘要翻译：一种用于预测光刻印刷在晶片上的集成电路片段的功能性的方法。最初提供了集成电路的二维设计，包括具有临界宽度的集成电路段，并且模拟了临界宽度集成电路段的二维打印图像。该方法然后包括确定设计的关键宽度集成电路段的周长或区域与模拟的打印临界宽度集成电路段的比率，以及基于周边或区域的比率来预测打印之后的临界宽度集成电路段的功能。

55. 发明申请

US20100297847A1 Method of forming sub-lithographic features using directed self-assembly of polymers 有权
标题翻译：使用聚合物的定向自组装形成亚光刻特征的方法
公开(公告)号：US20100297847A1
公开(公告)日：2010-11-25
申请号：US12470760
申请日：2009-05-22
申请人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Charles Rettner , Daniel P. Sanders , Da Yang
发明人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Charles Rettner , Daniel P. Sanders , Da Yang
IPC分类号： H01L21/465
CPC分类号： H01L21/76816 , B81B2203/0353 , B81B2207/07 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , G03F7/40 , H01L21/0337 , H01L21/31144 , Y10S438/947
摘要： Methods involving the self-assembly of block copolymers are described herein, in which by beginning with openings (in one or more substrates) that have a targeted CD (critical dimension), holes are formed, in either regular arrays or arbitrary arrangements. Significantly, the percentage variation in the average diameter of the formed holes is less than the percentage variation of the average diameter of the initial openings. The formed holes (or vias) can be transferred into the underlying substrate(s), and these holes may then be backfilled with material, such as a metallic conductor. Preferred aspects of the invention enable the creation of vias with tighter pitch and better CD uniformity, even at sub-22 nm technology nodes.
摘要翻译：本文描述了涉及嵌段共聚物的自组装的方法，其中从具有目标CD（临界尺寸）的开口（在一个或多个衬底中）开始，以规则阵列或任意布置形成孔。显着地，形成的孔的平均直径的百分比变化小于初始开口的平均直径的变化百分比。形成的孔（或通孔）可以被转移到下面的基底中，然后这些孔可以用诸如金属导体的材料回填。本发明的优选方面能够创建具有更紧的间距和更好的CD均匀性的通孔，即使在22nm以下的技术节点处。

56. 发明申请

US20090208865A1 PHOTOLITHOGRAPHY FOCUS IMPROVEMENT BY REDUCTION OF AUTOFOCUS RADIATION TRANSMISSION INTO SUBSTRATE 审中-公开
标题翻译：通过减少自适应辐射传输到基板中的光刻技术改进
公开(公告)号：US20090208865A1
公开(公告)日：2009-08-20
申请号：US12033303
申请日：2008-02-19
申请人： Timothy A. Brunner , Sean D. Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
发明人： Timothy A. Brunner , Sean D. Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
IPC分类号： G03F7/004 , G03F7/00
CPC分类号： G03F7/091 , G03F7/70216 , Y10S430/127
摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.
摘要翻译：防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。

57. 发明授权

US07305334B2 Methodology for image fidelity verification 有权
标题翻译：图像保真度验证方法
公开(公告)号：US07305334B2
公开(公告)日：2007-12-04
申请号：US10908724
申请日：2005-05-24
申请人： Ioana Graur , Kafai Lai , Rama N. Singh
发明人： Ioana Graur , Kafai Lai , Rama N. Singh
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： A method for predicting functionality of an integrated circuit segment to be lithographically printed on a wafer. Initially there is provided a two-dimensional design of an integrated circuit, including an integrated circuit segment having critical width, and a two-dimensional printed image of the critical width integrated circuit segment is simulated. The method then includes determining a ratio of perimeters or areas of the designed critical width integrated circuit segment to the simulated printed critical width integrated circuit segment, and predicting functionality of the critical width integrated circuit segment after printing based on the ratio of perimeters or areas.
摘要翻译：一种用于预测光刻印刷在晶片上的集成电路片段的功能性的方法。最初提供了集成电路的二维设计，包括具有临界宽度的集成电路段，并且模拟了临界宽度集成电路段的二维打印图像。该方法然后包括确定设计的关键宽度集成电路段的周长或区域与模拟的打印临界宽度集成电路段的比率，以及基于周边或区域的比率来预测打印之后的临界宽度集成电路段的功能。

58. 发明授权

US06777147B1 Method for evaluating the effects of multiple exposure processes in lithography 有权
标题翻译：用于评估光刻中多次曝光过程的影响的方法
公开(公告)号：US06777147B1
公开(公告)日：2004-08-17
申请号：US10249944
申请日：2003-05-21
申请人： Carlos A. Fonseca , Scott J. Bukofsky , Kafai Lai
发明人： Carlos A. Fonseca , Scott J. Bukofsky , Kafai Lai
IPC分类号： G03F900
CPC分类号： G03F7/705 , G03F7/70466 , G03F7/70625 , G03F7/70641
摘要： A method of evaluating process effects of multiple exposure photolithographic processes by first determining a set of expected images for each exposure step or process of the multiple exposure process individually and then obtaining a composite set of images by sequentially perturbing images from a first or previous exposure step by weighted images from the subsequent exposure step. Preferably, the expected images are determined by simulation in the form of normalized aerial images over a range of defocus for each exposure step, and the weighting factor used is the dose-ratio of the subsequent exposure dose to the prior step exposure dose. The resulting composite set of images may be used to evaluate multiple exposure processes, for example, to provide an estimate of yield for a given budget of dose and focus errors, or alternatively, to provide specifications for tool error budgets required to obtain a target yield.
摘要翻译：一种评估多次曝光光刻处理的处理效果的方法，其通过首先单独确定每个曝光步骤或多次曝光处理的预期图像集合，然后通过依次扰动来自第一曝光步骤或先前曝光步骤的图像来获得复合图像组通过后续曝光步骤的加权图像。优选地，通过在每个曝光步骤的散焦范围上的归一化空间图像的形式的模拟来确定预期图像，并且所使用的加权因子是随后的曝光剂量与先前阶段曝光剂量的剂量比。所得到的复合图像集合可以用于评估多个曝光过程，例如，为给定的剂量和焦点误差预算提供产量的估计，或者提供用于获得目标产量所需的工具误差预算的规格。

59. 发明授权

US08495528B2 Method for generating a plurality of optimized wavefronts for a multiple exposure lithographic process 失效
标题翻译：用于产生用于多次曝光光刻工艺的多个优化波前的方法
公开(公告)号：US08495528B2
公开(公告)日：2013-07-23
申请号：US12890854
申请日：2010-09-27
申请人： Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
发明人： Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
IPC分类号： G06F17/50
CPC分类号： G03F7/70466 , G03F1/70
摘要： A simplified version of a multiexpose mask optimization problem is solved in order to find a compressed space in which to search for the solution to the full problem formulation. The simplification is to reduce the full problem to an unconstrained formulation. The full problem of minimizing dark region intensity while maintaining intensity above threshold at each bright point can be converted to the unconstrained problem of minimizing average dark region intensity per unit of average intensity in the bright regions. The extrema solutions to the simplified problem can be obtained for each source. This set of extrema solutions is then assessed to determine which features are predominantly printed by which source. A minimal set of extrema solutions serves as a space of reduced dimensionality within which to maximize the primary objective under constraints. The space typically has reduced dimensionality through selection of highest quality extrema solutions.
摘要翻译：解决了一个简化版本的多功能面罩优化问题，以便找到一个压缩空间，在该空间中搜索解决问题的全部问题。简化是将完整的问题减少到无约束的公式。将每个亮点处的强度保持在阈值以上的暗区强度最小化的问题可以转化为明亮区域每单位平均强度平均暗区强度最小化的无约束问题。可以为每个源获得简化问题的极值解。然后评估这组极值解决方案，以确定哪些特征主要由哪个来源打印。最小的一组极值解决方案作为减小维数的空间，在这个空间内可以在约束条件下最大化主要目标。该空间通常通过选择最高质量的极值解决方案降低维度。

60. 发明授权

US08351037B2 Method to match exposure tools using a programmable illuminator 失效
标题翻译：使用可编程照明器匹配曝光工具的方法
公开(公告)号：US08351037B2
公开(公告)日：2013-01-08
申请号：US12834379
申请日：2010-07-12
申请人： Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian
发明人： Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G01B11/00
CPC分类号： G03F1/36 , G03F7/70116 , G03F7/70125 , G03F7/70525
摘要： Programmable illuminators in exposure tools are employed to increase the degree of freedom in tool matching. A tool matching methodology is provided that utilizes the fine adjustment of the individual source pixel intensity based on a linear programming (LP) problem subjected to user-specific constraints to minimize the difference of the lithographic wafer data between two tools. The lithographic data can be critical dimension differences from multiple targets and multiple process conditions. This LP problem can be modified to include a binary variable for matching sources using multi-scan exposure. The method can be applied to scenarios that the reference tool is a physical tool or a virtual ideal tool. In addition, this method can match different lithography systems, each including a tool and a mask.
摘要翻译：使用曝光工具中的可编程照明器来增加刀具匹配的自由度。提供了一种工具匹配方法，其利用基于用户特定约束的线性规划（LP）问题对各个源像素强度的精细调整，以最小化两种工具之间的平版印刷晶片数据的差异。光刻数据可以是来自多个目标和多个工艺条件的关键尺寸差异。该LP问题可以修改为包括使用多次扫描曝光来匹配源的二进制变量。该方法可以应用于参考工具是物理工具或虚拟理想工具的场景。此外，该方法可以匹配不同的光刻系统，每个包括工具和掩模。

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