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51. 发明申请

US20070170144A1 Container having segmented bumper rib 有权
标题翻译：集装箱分段保险杠肋
公开(公告)号：US20070170144A1
公开(公告)日：2007-07-26
申请号：US11339710
申请日：2006-01-25
申请人： Michael Lane , Mark Blystone , G. Lisch , Richard Rangler
发明人： Michael Lane , Mark Blystone , G. Lisch , Richard Rangler
IPC分类号： B65D90/02
CPC分类号： B65D1/0223 , B65D2501/0036
摘要： A plastic container has an upper portion including a mouth defining an opening into the container. A shoulder region extends from the upper portion. A sidewall portion extends from the shoulder region to a base portion. The base portion closes off an end of the container. An upper bumper portion is defined at a transition between the shoulder region and the sidewall portion. The upper bumper portion includes an upper raised wall defining a maximum width of the container. The upper raised wall includes a recessed portion formed therein. A lower bumper portion is defined at a transition between the base portion and the sidewall portion. The lower bumper portion includes a lower raised wall defining the maximum width of the container. The lower raised wall includes a recessed portion formed therein.
摘要翻译：塑料容器具有包括限定开口进入容器的口的上部。肩部区域从上部延伸。侧壁部分从肩部区域延伸到基部。基部封闭容器的一端。上部保险杠部分限定在肩部区域和侧壁部分之间的过渡处。上保险杠部分包括限定容器的最大宽度的上部上部壁。上侧的上部壁部形成有凹部。下保险杠部分限定在基部和侧壁部分之间的过渡处。下保险杠部分包括限定容器的最大宽度的下凸起壁。下部的上升壁包括形成在其中的凹部。

52. 发明申请

US20070108638A1 ALIGNMENT MARK WITH IMPROVED RESISTANCE TO DICING INDUCED CRACKING AND DELAMINATION IN THE SCRIBE REGION 审中-公开
标题翻译：对准标记具有改进的电阻率，可以在切片区域引起破碎和分层
公开(公告)号：US20070108638A1
公开(公告)日：2007-05-17
申请号：US11164266
申请日：2005-11-16
申请人： Michael Lane , Christopher Muzzy , Roger Yerdon
发明人： Michael Lane , Christopher Muzzy , Roger Yerdon
IPC分类号： H01L23/544 , H01L21/78
CPC分类号： H01L23/544 , H01L2223/5442 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A robust alignment mark used in semiconductor processing to help deter the expansion of cracks and delamination caused by the cutting of a dicing blade. A cross-shaped structure is used as a line site for alignment of the dicing blade. A plurality of rectangular elements is situated about the periphery of the alignment mark and populated with via bar structures that are interconnected at each level of the wafer, and laid in a serpentine fashion throughout each element to expose more of the via bar structure surface area to propagating cracks. The rectangular elements are formed of different sizes to expose more surface area to propagating cracks. A plurality of square, metal-level structures is formed in the area between the cross-shaped structure and the peripherally placed, rectangular elements.
摘要翻译：在半导体处理中使用的坚固的对准标记，以帮助阻止由切割刀片切割引起的裂纹和分层的扩展。十字形结构被用作对准切割刀片的线状部位。多个矩形元件围绕对准标记的周边设置，并且填充有在每个晶片的每个级别处互连的通孔条结构，并且遍及每个元件以蛇形方式铺设以将更多的通孔条结构表面区域暴露于传播裂缝。矩形元件由不同的尺寸形成，以使更多的表面积暴露于传播的裂纹。在十字形结构和外围放置的矩形元件之间的区域中形成多个方形金属层结构。

53. 发明申请

US20060186083A1 Circumferential stiffening rib for hot-fill containers 有权
标题翻译：用于热灌装容器的圆周加强筋
公开(公告)号：US20060186083A1
公开(公告)日：2006-08-24
申请号：US11064610
申请日：2005-02-24
申请人： Rohit Joshi , Michael Lane , Richard Steih
发明人： Rohit Joshi , Michael Lane , Richard Steih
IPC分类号： B65D90/02
CPC分类号： B65D1/0223 , B65D79/005
摘要： A polymer container suitable for hot-filling featuring at least one circumferential rib having a plurality of varying width regions transitioning from a smaller dimension area, to a larger dimension area, to the smaller dimension area. The larger dimension area is adjacent a land area between any two adjacent vacuum panels.
摘要翻译：适用于热灌装的聚合物容器，其特征在于具有至少一个圆周肋，所述至少一个周向肋具有从较小尺寸区域向较大尺寸区域转移到较小尺寸区域的多个变化宽度区域。较大的尺寸区域与任何两个相邻的真空面板之间的陆地区域相邻。

54. 发明申请

US20060157857A1 Metal capped copper interconnect 有权
公开(公告)号：US20060157857A1
公开(公告)日：2006-07-20
申请号：US11376199
申请日：2006-03-16
申请人： Michael Lane , Stefanie Chiras , Terry Spooner , Robert Rosenberg
发明人： Michael Lane , Stefanie Chiras , Terry Spooner , Robert Rosenberg
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： C25D5/10 , C25D5/50 , C25D7/123 , H01L21/2885 , H01L21/76807 , H01L21/76843 , H01L21/76849 , H01L21/76867 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L21/76886 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： A conducting material comprising: a conducting core region comprising copper and from 0.001 atomic percent to 0.6 atomic percent of one or more metals selected from iridium, osmium and rhenium; and an interfacial region. The interfacial region comprises at least 80 atomic percent or greater of the one or more metals. The invention is also directed to a method of making a conducting material comprising: providing an underlayer; contacting the underlayer with a seed layer, the seed layer comprising copper and one or more metals selected from iridium, osmium and rhenium; depositing a conducting layer comprising copper on the seed layer, and annealing the conducting layer at a temperature sufficient to cause grain growth in the conducting layer, yet minimize the migration of the one or more alloy metals from the seed layer to the conducting layer. The method further comprises polishing the conducting layer to provide a polished copper surface material, and annealing the polished copper surface material at a temperature to cause migration of the one or more metals from the seed layer to the polished surface to provide an interfacial region in contact with a copper conductor core region. The interfacial region and the copper conductor core region comprise the one or more metals.

55. 发明申请

US20060006070A1 Copper conductor 有权
标题翻译：铜导体
公开(公告)号：US20060006070A1
公开(公告)日：2006-01-12
申请号：US10887087
申请日：2004-07-09
申请人： Michael Lane , Stefanie Chiras , Terry Spooner , Robert Rosenberg , Daniel Edelstein
发明人： Michael Lane , Stefanie Chiras , Terry Spooner , Robert Rosenberg , Daniel Edelstein
IPC分类号： C25D1/00 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： C25D5/10 , C25D5/50 , C25D7/123 , H01L21/2885 , H01L21/76807 , H01L21/76843 , H01L21/76849 , H01L21/76867 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L21/76886 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： A conducting material comprising: a conducting core region comprising copper and from 0.001 atomic percent to 0.6 atomic percent of one or more metals selected from iridium, osmium and rhenium; and an interfacial region. The interfacial region comprises at least 80 atomic percent or greater of the one or more metals. The invention is also directed to a method of making a conducting material comprising: providing an underlayer; contacting the underlayer with a seed layer, the seed layer comprising copper and one or more metals selected from iridium, osmium and rhenium; depositing a conducting layer comprising copper on the seed layer, and annealing the conducting layer at a temperature sufficient to cause grain growth in the conducting layer, yet minimize the migration of the one or more alloy metals from the seed layer to the conducting layer. The method further comprises polishing the conducting layer to provide a polished copper surface material, and annealing the polished copper surface material at a temperature to cause migration of the one or more metals from the seed layer to the polished surface to provide an interfacial region in contact with a copper conductor core region. The interfacial region and the copper conductor core region comprise the one or more metals.
摘要翻译：一种导电材料，包括：导电核心区域，其包含铜和0.001原子％至0.6原子％的选自铱，锇和铼的一种或多种金属; 和界面区域。所述界面区域包含所述一种或多种金属的至少80原子％以上。本发明还涉及一种制造导电材料的方法，包括：提供底层; 使底层与种子层接触，晶种层包含铜和一种或多种选自铱，锇和铼的金属; 在种子层上沉积包含铜的导电层，并且在足以在导电层中引起晶粒生长的温度下对导电层退火，同时最小化一种或多种合金金属从晶种层向导电层的迁移。该方法还包括抛光导电层以提供抛光的铜表面材料，并且在一定温度下退火抛光的铜表面材料，以使一种或多种金属从晶种层迁移到抛光表面以提供接触的界面区域具有铜导体核心区域。界面区域和铜导体芯区域包括一种或多种金属。

56. 发明申请

US20050208781A1 CRACKSTOP WITH RELEASE LAYER FOR CRACK CONTROL IN SEMICONDUCTORS 失效
标题翻译：具有释放层的CRACKSTOP用于半导体中的裂纹控制
公开(公告)号：US20050208781A1
公开(公告)日：2005-09-22
申请号：US10708735
申请日：2004-03-22
申请人： John Fitzsimmons , Michael Lane , Vincent McGahay , Thomas Shaw , Anthony Stamper
发明人： John Fitzsimmons , Michael Lane , Vincent McGahay , Thomas Shaw , Anthony Stamper
IPC分类号： B05D1/02 , H01L21/78 , H01L23/00
CPC分类号： H01L23/562 , H01L21/78 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming and the integrated circuit device structure formed having vertical interfaces adjacent an existing crack stop around a perimeter of a chip, whereby the vertical interface controls cracks generated during side processing of the device such as dicing, and in service from penetrating the crack stop. The vertical interface is comprised of a material that prevents cracks from damaging the crack stop by deflecting cracks away from penetrating the crack stop, or by absorbing the generated crack energies. Alternatively, the vertical interface may be a material that allows advancing cracks to lose enough energy such that they become incapable of penetrating the crack stop. The present vertical interfaces can be implemented in a number of ways such as, vertical spacers of release material, vertical trenches of release material or vertical channels of the release material.
摘要翻译：形成方法和集成电路器件结构形成，具有与现有裂纹相邻的垂直接口围绕芯片的周边，由此垂直接口控制器件的侧面处理期间产生的裂纹，例如切割，并且在穿透裂纹停止。垂直界面由防止裂纹破坏裂纹的材料组成，通过使裂纹偏离穿透裂缝，或通过吸收所产生的裂纹能量来防止裂纹破裂。或者，垂直界面可以是允许前进裂纹失去足够的能量使得它们不能穿透裂缝停止的材料。现有的垂直接口可以以多种方式实现，例如释放材料的垂直间隔物，释放材料的垂直沟槽或释放材料的垂直通道。

57. 发明申请

US20050199502A1 Method for electroplating on resistive substrates 审中-公开
标题翻译：电阻基板电镀方法
公开(公告)号：US20050199502A1
公开(公告)日：2005-09-15
申请号：US11123117
申请日：2005-05-06
申请人： Panayotis Andricacos , Hariklia Deligianni , Wilma Horkans , Keith Kwietniak , Michael Lane , Sandra Malhotra , Fenton McFeely , Conal Murray , Kenneth Rodbell , Philippe Vereecken
发明人： Panayotis Andricacos , Hariklia Deligianni , Wilma Horkans , Keith Kwietniak , Michael Lane , Sandra Malhotra , Fenton McFeely , Conal Murray , Kenneth Rodbell , Philippe Vereecken
IPC分类号： C25D5/18 , C25D7/12 , C25D5/02
CPC分类号： C25D5/18 , C25D7/12 , Y10S428/926 , Y10T428/12493 , Y10T428/12528 , Y10T428/12771 , Y10T428/12778 , Y10T428/12903
摘要： A conductive material is electroplated onto a platable resistive metal barrier layer(s) employing a plating bath optionally comprising a super filling additive and a suppressor, and by changing the current or voltage as a function of the area of plated metal. A structure is also provided that comprises a substrate, a platable metal barrier layer(s) located on the substrate and a relatively continuous uniform electroplated layer of a conductive material located on the platable resistive metal barrier layer.
摘要翻译：导电材料电镀在可镀敷的电阻金属阻挡层上，该层使用任选地包含超填充添加剂和抑制剂的电镀槽，并且通过改变作为电镀金属面积的函数的电流或电压。还提供了一种结构，其包括衬底，位于衬底上的可镀金属阻挡层和位于可镀电阻金属阻挡层上的导电材料的相对连续的均匀电镀层。

58. 发明申请

US20050118796A1 Process for forming an electrically conductive interconnect 审中-公开
标题翻译：用于形成导电互连的工艺
公开(公告)号：US20050118796A1
公开(公告)日：2005-06-02
申请号：US10722558
申请日：2003-11-28
申请人： Stefanie Chiras , Michael Lane , Robert Rosenberg , Terry Spooner
发明人： Stefanie Chiras , Michael Lane , Robert Rosenberg , Terry Spooner
IPC分类号： H01L21/768 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/76844 , H01L21/76805 , H01L21/76846
摘要： An electrically conductive metallic interconnect in a trench or via in a dielectric is provided by depositing a first liner layer on the walls and bottom of the trench or via; removing residual contamination from the bottom of the trench or via; depositing a second liner layer in the trench; depositing a seed layer and filling the trench with electrically conductive metallic material.
摘要翻译：通过在沟槽或通孔的壁和底部上沉积第一衬里层来提供电介质中沟槽或通路中的导电金属互连件; 去除沟槽底部或通孔的残留污染物; 在沟槽中沉积第二衬里层; 沉积种子层并用导电金属材料填充沟槽。

59. 发明申请

US20050110142A1 Diffusion barriers formed by low temperature deposition 审中-公开
标题翻译：通过低温沉积形成的扩散壁垒
公开(公告)号：US20050110142A1
公开(公告)日：2005-05-26
申请号：US10722934
申请日：2003-11-26
申请人： Michael Lane , Christian Lavoie , Sandra Malhotra , Fenton McFeely , John Yurkas
发明人： Michael Lane , Christian Lavoie , Sandra Malhotra , Fenton McFeely , John Yurkas
IPC分类号： H01L21/285 , H01L21/4763 , H01L21/768 , H01L23/48 , H01L23/532 , H01L29/40
CPC分类号： H01L21/76843 , H01L21/28556 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L2924/0002 , H01L2924/00
摘要： A solid state device includes a first material and a second material. A barrier layer is formed between the first material and the second material to prevent diffusion between the first material and the second material. The barrier layer includes a metal form of at least one of Ru and Re. The barrier layer is preferably formed using a low temperature deposition process, where the substrate is less than 400 degrees C.
摘要翻译：固体装置包括第一材料和第二材料。在第一材料和第二材料之间形成阻挡层以防止第一材料和第二材料之间的扩散。阻挡层包括Ru和Re中的至少一种的金属形式。阻挡层优选使用低温沉积工艺形成，其中衬底小于400℃。

60. 发明授权

US06787912B2 Barrier material for copper structures 有权
标题翻译：铜结构阻挡材料
公开(公告)号：US06787912B2
公开(公告)日：2004-09-07
申请号：US10132173
申请日：2002-04-26
申请人： Michael Lane , Fenton Read McFeely , Conal Murray , Robert Rosenberg
发明人： Michael Lane , Fenton Read McFeely , Conal Murray , Robert Rosenberg
IPC分类号： H01L2348
CPC分类号： H01L21/76846 , H01L21/32051 , H01L21/76871 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A barrier material that is particularly suited as a barrier layer in copper interconnects structures found in semiconductor structures. The barrier layer contains one or more regions with one region containing at least 50 atom percent of a copper interface metal. The copper interface metal is selected from ruthenium, rhodium, palladium, silver, gold, platinum, iridium, selenium, tellurium, or alloys thereof. The barrier layer also contains a dielectric interface material.
摘要翻译：特别适合作为铜的阻挡层的阻挡材料互连在半导体结构中的结构。阻挡层包含一个或多个区域，其中一个区域含有至少50原子百分比的铜界面金属。铜界面金属选自钌，铑，钯，银，金，铂，铱，硒，碲或其合金。阻挡层还包含介电界面材料。

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