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    • 53. 发明申请
    • SYSTEMS AND METHODS FOR MARKETPLACE LISTINGS USING A CAMERA ENABLED MOBILE DEVICE
    • 使用摄像机启动移动设备的市场地图列表的系统和方法
    • US20110264549A1
    • 2011-10-27
    • US13175641
    • 2011-07-01
    • Alan LewisKen Sun
    • Alan LewisKen Sun
    • G06Q30/00
    • G06Q30/0641G06Q30/0601G06Q30/0603
    • Computer-implemented systems and methods for generating marketplace listings using a camera enabled mobile device are described in which a request is received via a camera enabled mobile device to list one or more sale items. An image taken by the camera enable mobile device and depicting the one or more sale items is received. Image recognition is performed on the received image to identify the one or more sale items. Based on the identification of the one or more sale items depicted in the image, a set of descriptive data is automatically generated. The one or more sale items are listed on a marketplace using the image and the automatically generated set of descriptive data.
    • 描述了使用启用相机的移动设备生成市场列表的计算机实现的系统和方法,其中经由启用相机的移动设备接收到请求以列出一个或多个销售项目。 由相机拍摄的图像使移动设备能够描绘一个或多个销售物品。 对接收到的图像执行图像识别以识别一个或多个销售项目。 基于图像中描绘的一个或多个销售项目的识别,自动生成一组描述性数据。 一个或多个销售项目在市场上使用图像和自动生成的描述性数据集列出。
    • 58. 发明申请
    • Computer simulator for continuously variable transmissions
    • 用于无级变速器的计算机模拟器
    • US20050192785A1
    • 2005-09-01
    • US11063733
    • 2005-02-24
    • Alan LewisToshihiro Saito
    • Alan LewisToshihiro Saito
    • F16H9/12F16H9/18G06F17/50G06G7/48
    • G06F17/5009F16H9/18G06F17/5086G06F17/5095G06F2217/02
    • Improvements are made to a multi-body simulation (MBS) for computing belt dynamics in metal pushing V-Belts for CVTs. All of the improvements combine to more accurately model the forces in the CVT mechanism, and also provide insight into the mechanism performance. One improvement more accurately captures effects of ring bending, using ring and block gap geometry to calculate bending forces and torques. A second improvement is implementation of a thrust controller to adjust pulley thrust to control CVT input/output speed ratio. Pulley thrust is adjusted by means of a feedback loop until a desired speed ratio is obtained. Finally, pulley conical (tilt) deflection is modeled using a stiffness representation that is a function of the block radius on the pulley face.
    • 对用于CVT的金属推动V型皮带计算皮带动力学的多体模拟(MBS)进行了改进。 所有的改进结合起来,更准确地模拟了CVT机制中的力量,并提供了机构性能的洞察。 一个改进更准确地捕获环弯曲的影响,使用环和块间隙几何来计算弯曲力和扭矩。 第二个改进是实施推力控制器来调节滑轮推力以控制CVT输入/输出速度比。 通过反馈回路调节滑轮推力,直到获得所需的速比。 最后,使用作为滑轮面上的块半径的函数的刚度表示来对滑轮锥形(倾斜)偏转进行建模。
    • 60. 发明申请
    • Method of fabrication of a support structure for a semiconductor device
    • 制造半导体器件的支撑结构的方法
    • US20050014349A1
    • 2005-01-20
    • US10735695
    • 2003-12-16
    • Glen CareyIan JenksAlan LewisRene LujanHailong Zhou
    • Glen CareyIan JenksAlan LewisRene LujanHailong Zhou
    • C30B1/00H01L21/00H01L21/20H01L21/36H01L33/00H01S5/02H01S5/183H01S5/323
    • H01S5/18305H01L21/02395H01L21/02543H01L21/02546H01L33/0079H01S5/0217H01S5/0224H01S5/141H01S5/323
    • A method of fabricating a semiconductor device is described. In this method, a starting substrate of sufficient thickness is selected that has the required defect density levels, which may result in an undesirable doping level. Then a semiconductor layer having a desired doping level is formed on the starting substrate. The resulting semiconductor layer has the required defect density and doping levels for the final product application. After active components, electrical conductors, and any other needed structures are formed on the semiconductor layer, the starting substrate is removed leaving a desired thickness of the semiconductor layer. In a VECSEL application, the active components can be a gain cavity, where the semiconductor layer has the necessary defect density and doping levels to maximize wall plug efficiency (WPE). In one embodiment, the doping of the semiconductor layer is not uniform. For example, a majority of the layer is doped at a low level and the remainder is doped at a much higher level. This can result in improved WPE at particular thicknesses for the higher doped material.
    • 描述制造半导体器件的方法。 在该方法中,选择具有所需缺陷密度水平的足够厚度的起始衬底,这可能导致不期望的掺杂水平。 然后在起始衬底上形成具有期望的掺杂水平的半导体层。 所得到的半导体层具有所需的缺陷密度和最终产品应用的掺杂水平。 在有源部件之后,在半导体层上形成电导体和任何其它需要的结构,去除起始衬底,留出半导体层的所需厚度。 在VECSEL应用中,有源部件可以是增益腔,其中半导体层具有必要的缺陷密度和掺杂水平以最大化壁插拔效率(WPE)。 在一个实施例中,半导体层的掺杂不均匀。 例如,该层的大部分以低电平掺杂,其余部分以更高的水平掺杂。 这可以导致用于较高掺杂材料的特定厚度的改进的WPE。