专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070103028A1 MEMS device and interconnects for same 失效
标题翻译： MEMS器件和互连相同
公开(公告)号：US20070103028A1
公开(公告)日：2007-05-10
申请号：US11540485
申请日：2006-09-29
申请人： Alan Lewis , Manish Kothari , John Batey , Teruo Sasagawa , Ming-Hau Tung , Gregory U'Ren , Stephen Zee
发明人： Alan Lewis , Manish Kothari , John Batey , Teruo Sasagawa , Ming-Hau Tung , Gregory U'Ren , Stephen Zee
IPC分类号： H02N11/00
CPC分类号： B81B7/0006 , B81B7/007 , B81B2201/047 , G02B26/001 , H02N1/006
摘要： A microelectromechanical systems device having an electrical interconnect between circuitry outside the device and at least one of an electrode and a movable layer within the device. At least a portion of the electrical interconnect is formed from the same material as a conductive layer between the electrode and a mechanical layer of the device. In an embodiment, this conductive layer is a sacrificial layer that is subsequently removed to form a cavity between the electrode and the movable layer. The sacrificial layer is preferably formed of molybdenum, doped silicon, tungsten, or titanium. According to another embodiment, the conductive layer is a movable reflective layer that preferably comprises aluminum.
摘要翻译：一种微机电系统装置，其具有在所述装置外部的电路和所述装置内的电极和可移动层中的至少一个之间的电互连。电互连的至少一部分由与电极和器件的机械层之间的导电层相同的材料形成。在一个实施例中，该导电层是牺牲层，其随后被去除以在电极和可移动层之间形成空腔。牺牲层优选由钼，掺杂硅，钨或钛形成。根据另一实施例，导电层是优选包括铝的可移动反射层。

2. 发明申请

US20080234970A1 SYSTEM AND METHOD FOR MEASURING RESIDUAL STRESS 失效
标题翻译：用于测量残余应力的系统和方法
公开(公告)号：US20080234970A1
公开(公告)日：2008-09-25
申请号：US11690708
申请日：2007-03-23
申请人： Gregory U'Ren , Olivier Pierron
发明人： Gregory U'Ren , Olivier Pierron
IPC分类号： G01B7/16 , H01S4/00
CPC分类号： B81C99/005 , B81B2201/047 , G01L5/0047 , G02B26/001 , Y10T29/49002 , Y10T29/49004
摘要： The invention comprises devices and methods for determining residual stress in MEMS devices such as interferometric modulators. In one example, a device measuring residual stress of a deposited conduct material includes a material used to form a MEMS device, and a plurality of disconnectable electrical paths, wherein said plurality of paths are configured to disconnect as a function of residual stress of the material. In another example, a method of measuring residual stress of a conductive deposited material includes monitoring a plurality of signals, each of said plurality of signals being associated with one of a plurality of test structures, said plurality of test structures each being configured to change the associated signal upon being subject to a predetermined amount of residual stress, sensing a change in said plurality of signals, and determining a residual stress level in said material based on the sensed change in the plurality of signals.
摘要翻译：本发明包括用于确定诸如干涉式调制器的MEMS装置中的残余应力的装置和方法。在一个示例中，测量沉积的导电材料的残余应力的器件包括用于形成MEMS器件的材料和多个可断开的电路径，其中所述多个路径被配置为作为材料的残余应力的函数而断开。在另一个示例中，测量导电沉积材料的残余应力的方法包括监视多个信号，所述多个信号中的每个信号与多个测试结构中的一个相关联，所述多个测试结构各自被配置为改变相关联的信号经受预定量的残余应力，感测所述多个信号的变化，以及基于所感测到的多个信号的变化来确定所述材料中的残余应力水平。

3. 发明授权

US07423287B1 System and method for measuring residual stress 失效
标题翻译：用于测量残余应力的系统和方法
公开(公告)号：US07423287B1
公开(公告)日：2008-09-09
申请号：US11690708
申请日：2007-03-23
申请人： Gregory U'Ren , Olivier Pierron
发明人： Gregory U'Ren , Olivier Pierron
IPC分类号： H01L23/58 , H01L21/66 , G01R31/28
CPC分类号： B81C99/005 , B81B2201/047 , G01L5/0047 , G02B26/001 , Y10T29/49002 , Y10T29/49004
摘要： The invention comprises devices and methods for determining residual stress in MEMS devices such as interferometric modulators. In one example, a device measuring residual stress of a deposited conduct material includes a material used to form a MEMS device, and a plurality of disconnectable electrical paths, wherein said plurality of paths are configured to disconnect as a function of residual stress of the material. In another example, a method of measuring residual stress of a conductive deposited material includes monitoring a plurality of signals, each of said plurality of signals being associated with one of a plurality of test structures, said plurality of test structures each being configured to change the associated signal upon being subject to a predetermined amount of residual stress, sensing a change in said plurality of signals, and determining a residual stress level in said material based on the sensed change in the plurality of signals.
摘要翻译：本发明包括用于确定诸如干涉式调制器的MEMS装置中的残余应力的装置和方法。在一个示例中，测量沉积的导电材料的残余应力的器件包括用于形成MEMS器件的材料和多个可断开的电路径，其中所述多个路径被配置为作为材料的残余应力的函数而断开。在另一个示例中，测量导电沉积材料的残余应力的方法包括监视多个信号，所述多个信号中的每个信号与多个测试结构中的一个相关联，所述多个测试结构各自被配置为改变相关联的信号经受预定量的残余应力，感测所述多个信号的变化，以及基于所感测到的多个信号的变化来确定所述材料中的残余应力水平。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式