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51. 发明授权

US08962880B2 Amorphous asiatic tromethamine salt and preparation method thereof 有权
标题翻译：无定形亚洲氨丁三醇盐及其制备方法
公开(公告)号：US08962880B2
公开(公告)日：2015-02-24
申请号：US14006198
申请日：2012-03-21
申请人： Guobin Ren , Ying Liu , Jinyao Chen , Xiaoling Huang , Lin Xiao , Li Cai , Zhen Zhang , Xuejun Wu , Haiyan Sun , Quanhai Liu , Liling Jin , Minyu Liu , Yifang Deng , Zhiru Xu , Renhai Chen , Chungang Li , Xiangduan Tan , Yan Qin
发明人： Guobin Ren , Ying Liu , Jinyao Chen , Xiaoling Huang , Lin Xiao , Li Cai , Zhen Zhang , Xuejun Wu , Haiyan Sun , Quanhai Liu , Liling Jin , Minyu Liu , Yifang Deng , Zhiru Xu , Renhai Chen , Chungang Li , Xiangduan Tan , Yan Qin
IPC分类号： C07C227/14 , C07C215/10 , C07C229/38 , C07J63/00
CPC分类号： C07C227/14 , C07C215/10 , C07C229/38 , C07J63/008
摘要： An amorphous asiatic tromethamine salt and the preparation method thereof. The method includes the steps of: (1) dissolving asiatic acid in an organic solvent; step (2) mixing with tromethamine; step (3) stirring and salifying the same, and then removing the organic solvent. The method for preparing the amorphous asiatic tromethamine salt is easy and effective, and the water solubility and bioavailability of the asiatic tromethamine salt thus obtained are greatly compared with the prior art.
摘要翻译：一种无定形亚洲氨丁三醇盐及其制备方法。该方法包括以下步骤：（1）将积雪草酸溶解在有机溶剂中; 步骤（2）与氨丁三醇混合; 步骤（3）搅拌并使其成盐，然后除去有机溶剂。无定形亚洲氨基丁三醇盐的制备方法容易有效，与现有技术相比，所得到的亚稳氨基甲基胺盐的水溶性和生物利用度大大降低。

52. 发明授权

US08889537B2 Implantless dopant segregation for silicide contacts 有权
标题翻译：用于硅化物接触的无植入物掺杂剂分离
公开(公告)号：US08889537B2
公开(公告)日：2014-11-18
申请号：US12833272
申请日：2010-07-09
申请人： Cryil Cabral, Jr. , John M. Cotte , Dinesh R. Koli , Laura L. Kosbar , Mahadevaiyer Krishnan , Christian Lavoie , Stephen M. Rossnagel , Zhen Zhang
发明人： Cryil Cabral, Jr. , John M. Cotte , Dinesh R. Koli , Laura L. Kosbar , Mahadevaiyer Krishnan , Christian Lavoie , Stephen M. Rossnagel , Zhen Zhang
IPC分类号： H01L21/28 , H01L21/285 , H01L29/45
CPC分类号： H01L21/28512 , H01L21/28518 , H01L29/456
摘要： A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor material; annealing the doped metal layer and the semiconductor material, wherein the anneal causes a portion of the doped metal layer and a portion of the semiconductor material to react to form the silicide layer on the semiconductor material, and wherein the anneal further causes the segregated interfacial dopant layer to form between the semiconductor material and the silicide layer, the segregated interfacial dopant layer comprising dopants from the doped metal layer; and removing an unreacted portion of the doped metal layer from the silicide layer.
摘要翻译：在半导体材料和硅化物层之间的结处形成分离的界面掺杂剂层的方法包括在半导体材料上沉积掺杂的金属层; 退火所述掺杂金属层和所述半导体材料，其中所述退火使所述掺杂金属层的一部分和所述半导体材料的一部分反应以在所述半导体材料上形成所述硅化物层，并且其中所述退火还导致所述分离的界面掺杂剂层，以形成在半导体材料和硅化物层之间，分离的界面掺杂剂层包含来自掺杂金属层的掺杂剂; 以及从所述硅化物层去除所述掺杂金属层的未反应部分。

53. 发明授权

US08741753B2 Use of band edge gate metals as source drain contacts 有权
标题翻译：使用带边栅极金属作为源极漏极触点
公开(公告)号：US08741753B2
公开(公告)日：2014-06-03
申请号：US13611736
申请日：2012-09-12
申请人： Kisik Choi , Christian Lavoie , Paul M. Solomon , Bin Yang , Zhen Zhang
发明人： Kisik Choi , Christian Lavoie , Paul M. Solomon , Bin Yang , Zhen Zhang
IPC分类号： H01L21/20 , H01L21/3205 , H01L21/00
CPC分类号： H01L29/7833 , H01L21/28512 , H01L29/4958 , H01L29/4966 , H01L29/66545
摘要： A device includes a gate stack formed over a channel in a semiconductor substrate. The gate stack includes a layer of gate insulator material, a layer of gate metal overlying the layer of gate insulator material, and a layer of contact metal overlying the layer band edge gate metal. The device further includes source and drain contacts adjacent to the channel. The source and drain contacts each include a layer of the gate metal that overlies and is in direct electrical contact with a doped region of the semiconductor substrate, and a layer of contact metal that overlies the layer of gate metal.
摘要翻译：一种器件包括形成在半导体衬底中的沟道上方的栅叠层。栅极堆叠包括栅极绝缘体材料层，覆盖栅极绝缘体材料层的栅极金属层和覆盖层带边缘栅极金属的接触金属层。该装置还包括邻近通道的源极和漏极接触。源极和漏极触点各自包括覆盖并与半导体衬底的掺杂区域直接电接触的栅极金属层以及覆盖在栅极金属层上的接触金属层。

54. 发明授权

US08456011B2 Method to control metal semiconductor micro-structure 有权
公开(公告)号：US08456011B2
公开(公告)日：2013-06-04
申请号：US13006664
申请日：2011-01-14
申请人： Christian Lavoie , Ahmet S. Ozcan , Zhen Zhang , Bin Yang
发明人： Christian Lavoie , Ahmet S. Ozcan , Zhen Zhang , Bin Yang
IPC分类号： H01L23/532
CPC分类号： H01L21/768 , H01L21/28518 , H01L23/485 , H01L29/456 , H01L29/66545 , H01L29/66575 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a metal semiconductor alloy that includes forming an intermixed metal semiconductor region to a first depth of a semiconductor substrate without thermal diffusion. The intermixed metal semiconductor region is annealed to form a textured metal semiconductor alloy. A second metal layer is formed on the textured metal semiconductor alloy. The second metal layer on the textured metal semiconductor alloy is then annealed to form a metal semiconductor alloy contact, in which metal elements from the second metal layer are diffused through the textured metal semiconductor alloy to provide a templated metal semiconductor alloy. The templated metal semiconductor alloy includes a grain size that is greater than 2× for the metal semiconductor alloy, which has a thickness ranging from 15 nm to 50 nm.

55. 发明授权

US08440409B2 Protein C inhibitor as a biomarker for prostate cancer 失效
标题翻译：蛋白C抑制剂作为前列腺癌的生物标志物
公开(公告)号：US08440409B2
公开(公告)日：2013-05-14
申请号：US11992000
申请日：2006-09-19
申请人： Zhen Zhang , Daniel W. Chan , Carolyn N. Rosenzwelg
发明人： Zhen Zhang , Daniel W. Chan , Carolyn N. Rosenzwelg
IPC分类号： G01N33/53 , G01N33/574
CPC分类号： G01N33/57434 , G01N2333/8121
摘要： The present invention provides a protein-based biomarker, Protein C Inhibitor (PCI) that is useful in qualifying prostate cancer status in a patient. In particular, the biomarker of this invention is useful to classify a subject sample as prostate cancer or non-prostate cancer. The biomarker can be detected by SELDI mass spectrometry.
摘要翻译：本发明提供了一种蛋白质生物标志物蛋白C抑制剂（PCI），其可用于鉴定患者中的前列腺癌状态。特别地，本发明的生物标志物可用于将受试者样品分类为前列腺癌或非前列腺癌。可通过SELDI质谱法检测生物标志物。

56. 发明授权

US08278200B2 Metal-semiconductor intermixed regions 有权
标题翻译：金属半导体混合区域
公开(公告)号：US08278200B2
公开(公告)日：2012-10-02
申请号：US13012043
申请日：2011-01-24
申请人： Christian Lavoie , Tak H. Ning , Ahmet S. Ozcan , Bin Yang , Zhen Zhang
发明人： Christian Lavoie , Tak H. Ning , Ahmet S. Ozcan , Bin Yang , Zhen Zhang
IPC分类号： H01L21/20
CPC分类号： H01L21/28518
摘要： In one exemplary embodiment, a program storage device readable by a machine, tangibly embodying a program of instructions executable by the machine for performing operations, said operations including: depositing a first layer having a first metal on a surface of a semiconductor structure, where depositing the first layer creates a first intermix region at an interface of the first layer and the semiconductor structure; removing a portion of the deposited first layer to expose the first intermix region; depositing a second layer having a second metal on the first intermix region, where depositing the second layer creates a second intermix region at an interface of the second layer and the first intermix region; removing a portion of the deposited second layer to expose the second intermix region; and performing at least one anneal on the semiconductor structure.
摘要翻译：在一个示例性实施例中，一种可由机器读取的程序存储设备，其有形地体现了可由机器执行的用于执行操作的指令程序，所述操作包括：在半导体结构的表面上沉积具有第一金属的第一层，第一层在第一层和半导体结构的界面处形成第一混合区; 去除沉积的第一层的一部分以暴露第一混合区; 在所述第一混合区域上沉积具有第二金属的第二层，其中沉积所述第二层在所述第二层和所述第一混合区的界面处产生第二混合区; 去除沉积的第二层的一部分以暴露第二混合区; 以及在所述半导体结构上执行至少一个退火。

57. 发明申请

US20120220476A1 BIOMARKERS FOR OVARIAN CANCER 有权
标题翻译： OVARIAN癌症生物标志物
公开(公告)号：US20120220476A1
公开(公告)日：2012-08-30
申请号：US13372137
申请日：2012-02-13
申请人： Daniel W. Chan , Zhen Zhang , Eric Fung , Xiao-Ying Meng
发明人： Daniel W. Chan , Zhen Zhang , Eric Fung , Xiao-Ying Meng
IPC分类号： C40B30/04 , G06F19/10 , C40B40/10
CPC分类号： G06F19/34 , G01N33/57449
摘要： The present invention relates to a method of qualifying ovarian cancer status in a subject comprising: (a) measuring at least one biomarker in a sample from the subject and (b) correlating the measurement with ovarian cancer status. The invention further relates to kits for qualifying ovarian cancer status in a subject.
摘要翻译：本发明涉及一种在受试者中鉴定卵巢癌状态的方法，包括：（a）测量来自受试者的样品中的至少一种生物标志物，和（b）将测量与卵巢癌状态相关联。本发明还涉及用于在受试者中鉴定卵巢癌状态的试剂盒。

58. 发明授权

US08168503B2 Method for forming an SOI schottky source/drain device to control encroachment and delamination of silicide 有权
标题翻译：用于形成SOI肖特基源极/漏极器件以控制硅化物侵蚀和分层的方法
公开(公告)号：US08168503B2
公开(公告)日：2012-05-01
申请号：US12726736
申请日：2010-03-18
申请人： Marwan H. Khater , Christian Lavoie , Bin Yang , Zhen Zhang
发明人： Marwan H. Khater , Christian Lavoie , Bin Yang , Zhen Zhang
IPC分类号： H01L21/336
CPC分类号： H01L29/7839 , H01L29/78654
摘要： A method of fabricating a Schottky field effect transistor is provided that includes providing a substrate having at least a first semiconductor layer overlying a dielectric layer, wherein the first semiconductor layer has a thickness of less than 10.0 nm. A gate structure is formed directly on the first semiconductor layer. A raised semiconductor material is selectively formed on the first semiconductor layer adjacent to the gate structure. The raised semiconductor material is converted into Schottky source and drain regions composed of a metal semiconductor alloy. A non-reacted semiconductor material is present between the Schottky source and drain regions and the dielectric layer.
摘要翻译：提供一种制造肖特基场效应晶体管的方法，其包括提供具有覆盖在电介质层上的至少第一半导体层的衬底，其中第一半导体层具有小于10.0nm的厚度。栅极结构直接形成在第一半导体层上。凸起的半导体材料选择性地形成在与栅极结构相邻的第一半导体层上。凸起的半导体材料被转换成由金属半导体合金构成的肖特基源极和漏极区域。在肖特基源极和漏极区域与电介质层之间存在未反应的半导体材料。

59. 发明申请

US20120046185A1 PANEL OF BIOMARKERS FOR OVARIAN CANCER 审中-公开
标题翻译： OVARIAN癌症生物标志物小组
公开(公告)号：US20120046185A1
公开(公告)日：2012-02-23
申请号：US13204566
申请日：2011-08-05
申请人： Daniel W. Chan , Zhen Zhang , Eric Fung
发明人： Daniel W. Chan , Zhen Zhang , Eric Fung
IPC分类号： C40B30/04 , H01J49/26 , C07K16/18 , G01N33/574 , C07K16/30
CPC分类号： G01N33/57449
摘要： The present invention provides a panel of protein-based biomarkers that are useful in diagnosing ovarian cancer in a subject. In particular, the panel of biomarkers of the invention are useful to classify a subject sample as having ovarian cancer or non-ovarian cancer.
摘要翻译：本发明提供了一组可用于诊断受试者卵巢癌的基于蛋白质的生物标志物。特别地，本发明的生物标志物组对于将受试者样品分类为具有卵巢癌或非卵巢癌是有用的。

60. 发明申请

US20120009771A1 Implantless Dopant Segregation for Silicide Contacts 有权
标题翻译：用于硅胶接触的无植入物掺杂剂分离
公开(公告)号：US20120009771A1
公开(公告)日：2012-01-12
申请号：US12833272
申请日：2010-07-09
申请人： Cyril Cabral, JR. , John M. Cotte , Dinesh R. Koli , Laura L. Kosbar , Mahadevaiyer Krishnan , Christian Lavoie , Stephen M. Rossnagel , Zhen Zhang
发明人： Cyril Cabral, JR. , John M. Cotte , Dinesh R. Koli , Laura L. Kosbar , Mahadevaiyer Krishnan , Christian Lavoie , Stephen M. Rossnagel , Zhen Zhang
IPC分类号： H01L21/3205
CPC分类号： H01L21/28512 , H01L21/28518 , H01L29/456
摘要： A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor material; annealing the doped metal layer and the semiconductor material, wherein the anneal causes a portion of the doped metal layer and a portion of the semiconductor material to react to form the silicide layer on the semiconductor material, and wherein the anneal further causes the segregated interfacial dopant layer to form between the semiconductor material and the silicide layer, the segregated interfacial dopant layer comprising dopants from the doped metal layer; and removing an unreacted portion of the doped metal layer from the silicide layer.
摘要翻译：在半导体材料和硅化物层之间的结处形成分离的界面掺杂剂层的方法包括在半导体材料上沉积掺杂的金属层; 退火所述掺杂金属层和所述半导体材料，其中所述退火使所述掺杂金属层的一部分和所述半导体材料的一部分反应以在所述半导体材料上形成所述硅化物层，并且其中所述退火还导致所述分离的界面掺杂剂层，以形成在半导体材料和硅化物层之间，分离的界面掺杂剂层包含来自掺杂金属层的掺杂剂; 以及从所述硅化物层去除所述掺杂金属层的未反应部分。

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