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51. 发明授权

US06872645B2 Methods of positioning and/or orienting nanostructures 有权
标题翻译：定位和/或定向纳米结构的方法
公开(公告)号：US06872645B2
公开(公告)日：2005-03-29
申请号：US10239000
申请日：2002-09-10
申请人： Xiangfeng Duan , Hugh Daniels , Chunming Niu , Vijendra Sahi , James Hamilton , Linda T. Romano
发明人： Xiangfeng Duan , Hugh Daniels , Chunming Niu , Vijendra Sahi , James Hamilton , Linda T. Romano
IPC分类号： B81C99/00 , C23F1/00 , H01L51/30 , H01L51/40 , H01L21/20 , H01L29/00
CPC分类号： H01L51/0048 , B01J23/52 , B81B2203/0361 , B81B2207/015 , B81C3/005 , B81C99/008 , B81C2203/057 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G11B5/743 , G11C2213/81 , H01L29/7869 , H01L51/0001 , H01L51/0595 , H01L2924/0002 , Y10S438/962 , Y10S977/762 , Y10S977/856 , Y10S977/857 , Y10S977/858 , Y10S977/89 , H01L2924/00
摘要： Methods of positioning and orienting nanostructures, and particularly nanowires, on surfaces for subsequent use or integration. The methods utilize mask based processes alone or in combination with flow based alignment of the nanostructures to provide oriented and positioned nanostructures on surfaces. Also provided are populations of positioned and/or oriented nanostructures, devices that include populations of positioned and/or oriented nanostructures, systems for positioning and/or orienting nanostructures, and related devices, systems and methods.
摘要翻译：在表面上定位和取向纳米结构，特别是纳米线的方法用于随后的使用或整合。该方法单独使用基于掩模的工艺，或者与纳米结构的基于流动的对准组合以在表面上提供定向和定位的纳米结构。还提供了定位和/或定向的纳米结构的群体，包括定位和/或定向纳米结构的群体，用于定位和/或取向纳米结构的系统以及相关设备，系统和方法。

52. 发明申请

US20110312163A1 Large Area Nanoenabled Macroelectronic Substrates and Uses Therefor 有权
标题翻译：大面积纳米电子基板及其用途
公开(公告)号：US20110312163A1
公开(公告)日：2011-12-22
申请号：US13218286
申请日：2011-08-25
申请人： Linda T. Romano , Jian Chen
发明人： Linda T. Romano , Jian Chen
IPC分类号： H01L21/20 , B82Y40/00
CPC分类号： H01L29/78696 , B82Y10/00 , B82Y25/00 , H01F1/0072 , H01L27/1214 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L33/08 , H01L33/18 , H01L35/26 , H01L35/32 , H01L41/082 , H01L41/18 , H01L41/316 , H01L51/0012 , H01L51/0048 , H01L51/0504 , H01L51/0508 , H01L51/0545 , H01L51/0595 , Y02E10/549
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译：描述了具有多个半导体器件的电子基片的方法和装置。在衬底上形成纳米线薄膜。纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。在纳米线的薄膜中限定多个半导体区域。在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

53. 发明授权

US07829351B2 Methods, devices and compositions for depositing and orienting nanostructures 有权
公开(公告)号：US07829351B2
公开(公告)日：2010-11-09
申请号：US11507631
申请日：2006-08-21
申请人： Robert S. Dubrow , Linda T. Romano , David P. Stumbo
发明人： Robert S. Dubrow , Linda T. Romano , David P. Stumbo
IPC分类号： H01L21/00 , H01L21/31
CPC分类号： H01L21/02422 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B7/00 , H01L21/02381 , H01L21/02521 , H01L21/02603 , H01L21/02656 , Y10S977/762 , Y10S977/827
摘要： Methods and systems for depositing nanomaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanomaterials on a transfer substrate and contacting the nanomaterials with an adherent material disposed upon a surface or portions of a surface of a receiving substrate. Orientation is optionally provided by moving the transfer and receiving substrates relative to each other during the transfer process.

54. 发明申请

US20100075468A1 Methods, devices and compositions for depositing and orienting nanostructures 有权
标题翻译：用于沉积和取向纳米结构的方法，装置和组合物
公开(公告)号：US20100075468A1
公开(公告)日：2010-03-25
申请号：US11507631
申请日：2006-08-21
申请人： Robert Dubrow , Linda T. Romano , David Stumbo
发明人： Robert Dubrow , Linda T. Romano , David Stumbo
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L21/02422 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B7/00 , H01L21/02381 , H01L21/02521 , H01L21/02603 , H01L21/02656 , Y10S977/762 , Y10S977/827
摘要： Methods and systems for depositing nanomaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanomaterials on a transfer substrate and contacting the nanomaterials with an adherent material disposed upon a surface or portions of a surface of a receiving substrate. Orientation is optionally provided by moving the transfer and receiving substrates relative to each other during the transfer process.
摘要翻译：用于将纳米材料沉积到接收衬底上并且任选地用于以期望取向沉积那些材料的方法和系统，其包括在转移衬底上提供纳米材料并使纳米材料与设置在接收衬底的表面或表面的部分上的粘附材料接触。可选地通过在传送过程中相对于彼此移动传送和接收基板来提供取向。

55. 发明授权

US07666791B2 Systems and methods for nanowire growth and harvesting 有权
标题翻译：纳米线生长和收获的系统和方法
公开(公告)号：US07666791B2
公开(公告)日：2010-02-23
申请号：US11839335
申请日：2007-08-15
申请人： Shahriar Mostarshed , Linda T. Romano
发明人： Shahriar Mostarshed , Linda T. Romano
IPC分类号： H01L21/311
CPC分类号： H01L29/0673 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/18 , C30B11/12 , C30B25/00 , C30B29/06 , C30B29/60 , C30B29/605 , H01L21/0237 , H01L21/02381 , H01L21/02422 , H01L21/02521 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/66477 , H01L29/78 , H01L29/7854 , H01L2924/0002 , Y10S438/962 , Y10S977/742 , Y10S977/743 , Y10S977/843 , Y10S977/891 , H01L2924/00
摘要： The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrificial growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
摘要翻译：本发明涉及用于纳米线生长和收获的系统和方法。在一个实施方案中，提供了纳米线生长和掺杂的方法，包括使用硅前体的组合的用于外延取向的纳米线生长的方法。在本发明的另一方面，提供了通过使用牺牲生长层来改善纳米线质量的方法。在本发明的另一方面，提供了将纳米线从一个衬底转移到另一个衬底的方法。

56. 发明申请

US20090075468A1 System and Process for Producing Nanowire Composites and Electronic Substrates Therefrom 有权
标题翻译：用于生产纳米线复合材料和电子基板的系统和工艺
公开(公告)号：US20090075468A1
公开(公告)日：2009-03-19
申请号：US12274904
申请日：2008-11-20
申请人： Mihai Buretea , Jian Chen , Calvin Chow , Chunming Niu , Yaoling Pan , J. Wallace Parce , Linda T. Romano , David Stumbo
发明人： Mihai Buretea , Jian Chen , Calvin Chow , Chunming Niu , Yaoling Pan , J. Wallace Parce , Linda T. Romano , David Stumbo
IPC分类号： H01L21/28
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/42384 , H01L29/66742 , H01L29/78681 , H01L29/78696 , H01L33/06 , H01L33/24 , H01L51/0048 , H01L51/0545 , H01L2924/0002 , Y10T428/2913 , H01L2924/00
摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.
摘要翻译：本发明涉及纳米线材料复合体的制造方法和制造方法。提供了具有连接到至少一个表面的一部分的纳米线的衬底。在该部分上沉积材料以形成纳米线材料复合材料。该方法进一步可选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。独立的纳米线材料复合材料任选进一步加工成电子基片。可以使用本文所述的方法来生产各种电子基板。例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

57. 发明授权

US07473943B2 Gate configuration for nanowire electronic devices 失效
标题翻译：纳米线电子器件的栅极配置
公开(公告)号：US07473943B2
公开(公告)日：2009-01-06
申请号：US11233398
申请日：2005-09-22
申请人： Shahriar Mostarshed , Jian Chen , Francisco Leon , Yaoling Pan , Linda T. Romano
发明人： Shahriar Mostarshed , Jian Chen , Francisco Leon , Yaoling Pan , Linda T. Romano
IPC分类号： H01L29/80
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/42384 , H01L29/42392 , H01L29/775 , H01L29/785 , H01L29/78645 , H01L29/78681 , H01L29/7869 , Y10S977/762 , Y10S977/932 , Y10S977/938
摘要： Methods, systems, and apparatuses for electronic devices having improved gate structures are described. An electronic device includes at least one nanowire. A gate contact is positioned along at least a portion of a length of the at least one nanowire. A dielectric material layer is between the gate contact and the at least one nanowire. A source contact and a drain contact are in contact with the at least one nanowire. At least a portion of the source contact and/or the drain contact overlaps with the gate contact along the nanowire the length. In another aspect, an electronic device includes a nanowire having a semiconductor core surrounded by an insulating shell layer. A ring shaped first gate region surrounds the nanowire along a portion of the length of the nanowire. A second gate region is positioned along the length of the nanowire between the nanowire and the substrate. A source contact and a drain contact are coupled to the semiconductor core of the nanowire at respective exposed portions of the semiconductor core.
摘要翻译：描述了具有改进的门结构的电子设备的方法，系统和装置。电子装置包括至少一个纳米线。栅极接触沿至少一个纳米线的长度的至少一部分定位。介电材料层在栅极接触和至少一个纳米线之间。源极触点和漏极触点与至少一个纳米线接触。源极触点和/或漏极触点的至少一部分沿着该纳米线的长度与栅极触点重叠。另一方面，一种电子器件包括具有被绝缘壳层包围的半导体芯的纳米线。环形第一栅极区域沿着纳米线长度的一部分包围纳米线。第二栅极区沿着纳米线和衬底之间的纳米线的长度定位。源极触点和漏极触点在半导体芯的相应的暴露部分处耦合到纳米线的半导体芯。

58. 发明授权

US07468315B2 System and process for producing nanowire composites and electronic substrates therefrom 有权
标题翻译：用于生产纳米线复合材料和电子基材的系统和工艺
公开(公告)号：US07468315B2
公开(公告)日：2008-12-23
申请号：US11225951
申请日：2005-09-14
申请人： Mihai A. Buretea , Jian Chen , Calvin Y. H. Chow , Chunming Niu , Yaoling Pan , J. Wallace Parce , Linda T. Romano , David P. Stumbo
发明人： Mihai A. Buretea , Jian Chen , Calvin Y. H. Chow , Chunming Niu , Yaoling Pan , J. Wallace Parce , Linda T. Romano , David P. Stumbo
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/42384 , H01L29/66742 , H01L29/78681 , H01L29/78696 , H01L33/06 , H01L33/24 , H01L51/0048 , H01L51/0545 , H01L2924/0002 , Y10T428/2913 , H01L2924/00
摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into an electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.
摘要翻译：本发明涉及纳米线材料复合体的制造方法和制造方法。提供了具有连接到至少一个表面的一部分的纳米线的衬底。在该部分上沉积材料以形成纳米线材料复合材料。该方法进一步可选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。独立的纳米线材料复合材料任选进一步加工成电子基片。可以使用本文所述的方法来生产各种电子基板。例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

59. 发明申请

US20080149961A1 III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain 有权
标题翻译： III型氮化物发光器件生长在模板上以减少应变
公开(公告)号：US20080149961A1
公开(公告)日：2008-06-26
申请号：US11615834
申请日：2006-12-22
申请人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
发明人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L31/184
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.
摘要翻译：在III族氮化物发光器件中，包括发光层的器件层在设计成减小器件中特别是在发光层中的应变的模板上生长。降低发光器件中的应变可以提高器件的性能。模板可以在常规生长模板可获得的晶格常数的范围内扩展发光层中的晶格常数。应变定义如下：给定层具有对应于与该层相同组成的自由材料的晶格常数和体内晶格常数a的体晶格常数a _{对应于在该结构中生长的该层的晶格常数。一层中的应变量是|（一个平面内的）本体体积。在一些实施方案中，发光层中的应变小于1％。}

60. 发明申请

US20080149942A1 III-Nitride Light Emitting Device with Reduced Strain Light Emitting Layer 有权
标题翻译：具有减少应变发光层的III型氮化物发光器件
公开(公告)号：US20080149942A1
公开(公告)日：2008-06-26
申请号：US11615479
申请日：2006-12-22
申请人： Sungsoo Yi , Aurelien J. F. David , Nathan F. Gardner , Michael R. Krames , Linda T. Romano
发明人： Sungsoo Yi , Aurelien J. F. David , Nathan F. Gardner , Michael R. Krames , Linda T. Romano
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/12 , H01L33/22
摘要： In accordance with embodiments of the invention, strain is reduced in the light emitting layer of a III-nitride device by including a strain-relieved layer in the device. The surface on which the strain-relieved layer is grown is configured such that strain-relieved layer can expand laterally and at least partially relax. In some embodiments of the invention, the strain-relieved layer is grown over a textured semiconductor layer or a mask layer. In some embodiments of the invention, the strain-relieved layer is group of posts of semiconductor material.
摘要翻译：根据本发明的实施例，通过在器件中包括应变消除层，在III族氮化物器件的发光层中应变被减小。应变消除层生长在其上的表面被配置成使得应变消除层可以横向膨胀并且至少部分地松弛。在本发明的一些实施方案中，应变释放层在织构化的半导体层或掩模层上生长。在本发明的一些实施例中，应变消除层是半导体材料的一组柱。

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