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    • 55. 发明授权
    • Multi-wavelength surface emitting laser and method for manufacturing the same
    • 多波长表面发射激光器及其制造方法
    • US07387906B2
    • 2008-06-17
    • US10890289
    • 2004-07-14
    • Eun-kyung LeeMin-hyung Chung
    • Eun-kyung LeeMin-hyung Chung
    • H01L21/00
    • H01S5/423H01S5/18308H01S5/18344H01S5/18361H01S5/2063H01S5/4087
    • A multi-wavelength surface emitting laser for emitting light having different wavelengths includes a lower reflector, an active layer and an upper reflector which are integrally formed above one substrate. The multi-wavelength surface emitting laser is manufactured by forming a first surface emitting laser, partially removing a first upper reflector, a first active layer, and a first lower reflection layer by etching. A protection film is formed on the outer surface of the first surface emitting laser. A second surface emitting laser is formed by removing a second lower reflector, a second active layer, and a second upper reflection layer formed on the protection film by etching. The protection film is removed and first and second upper electrodes are formed on upper surfaces of the first and second upper reflection layers, respectively, and a lower electrode is formed on a bottom surface of the substrate.
    • 用于发射具有不同波长的光的多波长表面发射激光器包括在一个基板上一体形成的下反射器,有源层和上反射器。 通过形成第一表面发射激光器,通过蚀刻部分地去除第一上反射器,第一有源层和第一下反射层来制造多波长表面发射激光器。 在第一表面发射激光器的外表面上形成保护膜。 通过蚀刻除去形成在保护膜上的第二下反射器,第二有源层和第二上反射层,形成第二表面发射激光器。 去除保护膜,分别在第一和第二上反射层的上表面上形成第一和第二上电极,并且在基板的底表面上形成下电极。
    • 57. 发明授权
    • Silicon optoelectronic device and light emitting apparatus using the same
    • 硅光电子器件和使用其的发光装置
    • US06930330B2
    • 2005-08-16
    • US10122421
    • 2002-04-16
    • Byoung-lyong ChoiSeung-ho NamEun-kyung LeeJae-ho YouJun-young Kim
    • Byoung-lyong ChoiSeung-ho NamEun-kyung LeeJae-ho YouJun-young Kim
    • H01L33/24H01L31/10H01L33/06H01L33/34H01L33/00
    • H01L33/34B82Y10/00H01L31/0232H01L31/035281
    • A silicon optoelectronic device and a light-emitting apparatus using the silicon optoelectronic device are provided. The silicon optoelectronic device includes: a substrate based on an n-type or p-type silicon; a doped region formed on one surface of the substrate and doped to an ultra-shallow depth with a predetermined dopant to be an opposite type from that of the substrate to provide a photoelectrical conversion effect by quantum confinement in a p-n junction between the doped region and the substrate; and first and second electrodes formed on the substrate to be electrically connected to the doped region. The silicon optoelectronic device may further include a control layer formed on one surface of the substrate to act as a mask in forming the doped region and to limit the depth of the doped region to be ultra-shallow. The silicon optoelectronic device has excellent efficiency and can be used as either a light-emitting device or a light-receiving device. Since the optoelectronic device uses silicon as a base material, it can be manufactured at low cost.
    • 提供硅光电子器件和使用硅光电子器件的发光设备。 硅光电子器件包括:基于n型或p型硅的衬底; 掺杂区域形成在衬底的一个表面上并掺杂到具有预定掺杂剂的超浅深度以与衬底相反的类型,以通过量子限制在掺杂区域和掺杂区域之间的pn结中提供光电转换效应 基材; 以及形成在所述基板上以电连接到所述掺杂区域的第一和第二电极。 硅光电子器件还可以包括形成在衬底的一个表面上的控制层,以在形成掺杂区域中用作掩模,并且将掺杂区域的深度限制为超浅。 硅光电子器件具有优异的效率,可用作发光器件或光接收器件。 由于光电器件使用硅作为基材,所以可以以低成本制造。
    • 60. 发明授权
    • Light-emitting device and display apparatus using the same
    • 发光装置及其使用的显示装置
    • US06677610B2
    • 2004-01-13
    • US10122219
    • 2002-04-16
    • Byoung-lyong ChoiEun-kyung Lee
    • Byoung-lyong ChoiEun-kyung Lee
    • H01L2904
    • H01L33/24H01L27/15H01L33/34
    • A light-emitting device and a display apparatus using the light-emitting device. The light-emitting device includes a p-type or n-type substrate, at least one doped region formed on at least one surface of the substrate while being doped with a predetermined dopant to be an opposite type from that of the substrate to emit light by quantum confinement in a p-n junction between the doped region and the substrate; and an electrode formed such that the light emitted from the p-n junction of the doped region is externally emitted through both surfaces of the substrate. The light-emitting device has a higher light-emitting efficiency than porous silicon-based and nano-crystal silicon-based light-emitting devices and can externally emit the light generated from the p-n junction in two directions. All of the light emitted in two directions can be utilized, thereby maximizing light-emitting efficiency.
    • 一种发光装置和使用该发光装置的显示装置。 发光器件包括p型或n型衬底,至少一个掺杂区域形成在衬底的至少一个表面上,同时掺杂预定掺杂剂以与衬底相反的方式发光 通过在掺杂区域和衬底之间的pn结中的量子限制; 以及形成为使得从掺杂区域的p-n结发射的光从衬底的两个表面外部发射的电极。 发光器件的发光效率高于多孔硅基和纳米晶硅基发光器件,并且可以从两个方向向外发射由p-n结产生的光。 可以利用沿两个方向发射的所有光,从而最大化发光效率。