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51. 发明申请

US20050088557A1 Solid state imaging device, method for driving the same and camera using the same 审中-公开
标题翻译：固态成像装置，其驱动方法及使用其的相机
公开(公告)号：US20050088557A1
公开(公告)日：2005-04-28
申请号：US10990724
申请日：2004-11-17
申请人： Takao Kuroda , Sei Suzuki , Akito Kidera
发明人： Takao Kuroda , Sei Suzuki , Akito Kidera
IPC分类号： H01L27/148 , H04N3/14 , H04N5/357 , H04N5/376
CPC分类号： H04N5/3728 , H04N5/357 , H04N5/3597
摘要： In making solid state imaging devices smaller and increasing their number of pixels, it is desirable to increase the charge amount that can be handled per unit area of the transfer portions. It is possible to achieve this by making the insulating film thinner, but this leads to electric fields in the semiconductor substrate that are too strong, and causes problems such as the generation of noise and the deterioration of the transfer efficiency. This invention relaxes potential steps in the transfer region by applying, when a signal charge 1 is being read out (t=t2), a high voltage to the electrode 43 for reading out the signal charge, a low voltage to at least one of the electrodes 41, 45-47 for preventing unnecessary mixing of signal charges, and an intermediate voltage between the high voltage and the low voltage to the electrodes 42 and 44, which are adjacent to the electrode 43 to which the high voltage is applied.
摘要翻译：在使固态成像装置更小并且其像素数量增加的情况下，期望增加可以在转印部分的每单位面积处理的电荷量。可以通过使绝缘膜更薄而实现这一点，但是这导致半导体衬底中的电场太强，并且引起噪声的产生和传输效率的劣化等问题。本发明通过在读出信号电荷1（t = t 2 2）时施加向读出信号电荷的电极43施加的高电压，放松了转印区域中的潜在步骤，低电压至至少一个电极41,45-47，用于防止信号电荷的不必要的混合，以及与电极43相邻的电极42和44的高电压和低电压之间的中间电压，施加高电压。

52. 发明授权

US06311139B1 Method for estimating yield of integrated circuit device 失效
标题翻译：集成电路器件产量估算方法
公开(公告)号：US06311139B1
公开(公告)日：2001-10-30
申请号：US09061088
申请日：1998-04-16
申请人： Takao Kuroda , Hideki Ishida
发明人： Takao Kuroda , Hideki Ishida
IPC分类号： G06F1500
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The necessary information such as chip area A, number of elements, and defect density D is inputted to calculate element density TD and mean element density TDM. The inverse operation chip area A′ is calculated from the estimation equation: Y=f(A) such as Stapper's equation showing the dependence of the yield on the defect density D and chip area A. Next, for various kinds of integrated circuit devices in a diffusion process, the functional relation g (TD/TDM) which is considered to be most correct is determined from the data of the relationship between the ratio (A′/A) and the ratio (TD/TDM), and from the relational expression g (TD/TDM), the correction factor K is calculated. Finally, the values of the correction factor K and the chip area A are substituted into Y=f(A×K) to calculate the expected yield Y.
摘要翻译：输入芯片面积A，元件数量和缺陷密度D等必要的信息来计算元件密度TD和平均元件密度TDM。根据估计方程：Y = f（A）计算反向运算芯片面积A'，例如显示产量对缺陷密度D和芯片面积A的依赖性的Stapper方程。接下来，对于各种集成电路器件考虑到扩散过程，从比率（A'/ A）和比率（TD / TDM）之间的关系的数据中确定被认为是最正确的功能关系g（TD / TDM），并且从关系表达式g（TD / TDM），计算校正因子K. 最后，将校正因子K和芯片面积A的值代入Y = f（AxK）来计算预期的产量Y.

53. 发明授权

US06248133B1 Solid state imaging device and a method of driving the same 失效
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US06248133B1
公开(公告)日：2001-06-19
申请号：US08631834
申请日：1996-04-10
申请人： Hiroyoshi Komobuchi , Akira Fukumoto , Takahiro Yamada , Takao Kuroda , Yuji Matsuda
发明人： Hiroyoshi Komobuchi , Akira Fukumoto , Takahiro Yamada , Takao Kuroda , Yuji Matsuda
IPC分类号： H04M5335
CPC分类号： H01L27/14806
摘要： A solid state imaging device has: a first polysilicon layer 901; a second polysilicon layer 902; a photoelectric converting portion or PD 903; a read gate 904; a read channel 905 (in this case, an N-layer) which is formed in a semiconductor below the read gate; a P-layer 906 which prevents a signal charge from erroneously entering a VCCD of a unit pixel adjacent in a horizontal direction; a P-layer 907 which defines the transfer channel region of a VCCD; and a VCCD 908 which transfers a signal charge in the direction of the arrows. A unit pixel 900 is indicated by a one-dot chain line. The two-dimensionally arrayed solid state imaging device is driven by driving pulses of eight phases in total, namely, a driving pulse &phgr;V1 911, a driving pulse &phgr;V2 912, a driving pulse &phgr;V3 913, a driving pulse &phgr;V4 914, a driving pulse &phgr;V5 915, a driving pulse &phgr;V6 916, a driving pulse &phgr;V7 917, and a driving pulse &phgr;V8 918.
摘要翻译：固态成像装置具有：第一多晶硅层901; 第二多晶硅层902; 光电转换部分或PD 903; 读门904; 在读取栅极下方形成半导体的读通道905（在这种情况下为N层）; P层906，其防止信号电荷错误地进入水平方向相邻的单位像素的VCCD; 限定VCCD的传输通道区域的P层907; 以及VCCD 908，其沿箭头方向传送信号电荷。单位像素900由单点划线表示。二维排列的固态成像装置由驱动脉冲phiV1 911，驱动脉冲phiV2 912，驱动脉冲phiV3 913，驱动脉冲phiV4 914，驱动脉冲phiV5 驱动脉冲phiV6 916，驱动脉冲phiV7 917，驱动脉冲phiV8 918。

54. 发明授权

US5831296A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5831296A
公开(公告)日：1998-11-03
申请号：US235155
申请日：1994-04-28
申请人： Takao Kuroda , Yasuhiro Shiraki
发明人： Takao Kuroda , Yasuhiro Shiraki
IPC分类号： H01L29/812 , H01L21/20 , H01L21/338 , H01L29/201 , H01L29/205 , H01L29/778 , H01L29/80
CPC分类号： H01L29/205 , H01L29/7783 , Y10S438/938
摘要： Disclosed is a semiconductor device comprising an undoped GaAs layer, an intermediate undoped layer and an undoped Ga.sub.1-x Al.sub.x As layer which are successively provided on a substrate made of a semiinsulating GaAs crystal; the intermediate undoped layer being an undoped In.sub.y Ga.sub.1-y As layer, an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs layer, or a superlattice layer which includes an undoped GaAs.sub.1-z Sb layer and an undoped GaAs layer. When applied to a high electron mobility transistor, this semiconductor device affords a high current and a high speed and has the merit of a small dispersion in the threshold voltage thereof.
摘要翻译：公开了一种半导体器件，其包括未掺杂的GaAs层，中间未掺杂层和未掺杂的Ga1-xAlxAs层，其连续地设置在由半绝缘GaAs晶体制成的衬底上; 中间未掺杂层是未掺杂的In y Ga 1-y As层，未掺杂的GaAs1-zSbz层，包含未掺杂的In y Ga 1-y As层的超晶格层和未掺杂的GaAs1-zSbz层，包含未掺杂的In y Ga 1-y As层的超晶格层和未掺杂的GaAs层或包含未掺杂的GaAs1-zSb层和未掺杂的GaAs层的超晶格层。当施加到高电子迁移率晶体管时，该半导体器件提供高电流和高速度，并且其阈值电压具有小的色散。

55. 发明授权

US5419151A Ice making machine 失效
标题翻译：制冰机
公开(公告)号：US5419151A
公开(公告)日：1995-05-30
申请号：US279080
申请日：1994-07-22
申请人： Katsunobu Minari , Takao Kuroda
发明人： Katsunobu Minari , Takao Kuroda
IPC分类号： F25C1/12
CPC分类号： F25C1/12
摘要： An ice making machine in which ice making water in a static or flowing condition is gradually frozen on the surface of an ice making plate cooled at an ice making cycle of the machine, wherein the surface of said ice making plate is made of synthetic resin or glass.
摘要翻译：一种制冰机，其中在静止或流动状态的制冰水在机器的制冰循环冷却的制冰板的表面上逐渐冷冻，其中所述制冰板的表面由合成树脂制成，或玻璃。

56. 发明授权

US4947224A Solid state image sensing device with photodiode to reduce smearing 失效
标题翻译：具有光电二极管的固态图像感测装置，以减少拖尾
公开(公告)号：US4947224A
公开(公告)日：1990-08-07
申请号：US251026
申请日：1988-09-26
申请人： Takao Kuroda , Toshihiro Kuriyama , Kenju Horii , Hiroyuki Mizuno
发明人： Takao Kuroda , Toshihiro Kuriyama , Kenju Horii , Hiroyuki Mizuno
IPC分类号： H01L27/148
CPC分类号： H01L27/14887 , H01L27/14831
摘要： In a solid state image sensing device of P-conductivity type well, photo-electro converting region (1) are configured to have a larger area as the depth increases, so that excessive electric charges generated in the p-conductivity type well are easily transferred from expanded peripheral parts (7) at the bottom (1b) to channel (3), without being undesirably transferred downward through thin p-conductivity type region 6 to substrate (4), and smear electric charges which has been generated in a thin p-conductivity type well under the photo-electro converting region in the conventional device is suppressed, to effectively decrease the smear phenomenon.
摘要翻译：在P导电型阱的固体摄像装置中，光电转换区域（1）被配置为随着深度增加而具有较大面积，使得在p导电型阱中产生的过多电荷容易转移从底部（1b）的扩大的周边部分（7）到通道（3），而不会不期望地通过薄的p导电类型区域6向下传递到基板（4），并且将在薄p中产生的电荷在传统器件的光电转换区域下良好的导电型被抑制，有效地减少了涂抹现象。

57. 发明授权

US4819036A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4819036A
公开(公告)日：1989-04-04
申请号：US60869
申请日：1987-05-04
申请人： Takao Kuroda , Akiyoshi Watanabe , Shinji Tsuji , Akio Ohishi , Hiroyoshi Matsumura
发明人： Takao Kuroda , Akiyoshi Watanabe , Shinji Tsuji , Akio Ohishi , Hiroyoshi Matsumura
IPC分类号： H01S5/00 , B82Y20/00 , H01L29/15 , H01L29/80 , H01L31/10 , H01S5/34 , H01S5/343
CPC分类号： H01L33/06 , B82Y20/00 , H01L29/155 , H01S5/343 , H01S5/3407 , H01S5/34306 , H01S5/34313 , H01S5/34326 , H01S5/3436 , H01S5/34366
摘要： A novel method which enables a quaternary III-V group crystal to be readily formed on a III-V group crystal so that the former crystal lattice-matches with the latter crystal. More specifically, it is easy to produce a superlattice structure on a III-V group crystal substrate, the superlattice structure consisting of a first III-V group (hereinafter referred to as "III.sup.1 -V.sup.1 ") binary crystal layer which lattice-matches with the substrate, and a III-V group (III.sup.1 -III.sup.2 -V.sup.2) ternary crystal layer which similarly lattice-matches with the substrate. It is possible to obtain an even more stable superlattice layer by selecting the ratio between the film thickness of the (III.sup.1 -V.sup.1) crystal and the film thickness of the (III.sup.1 -III.sup.2 -V.sup.2) crystal so that, when the superlattice structure is mixed-crystallized spontaneously or by means of impurity doping, the mixed-crystallized composition lattice-matches with the previous crystal.
摘要翻译： PCT No.PCT / JP86 / 00443 Sec。 371日期：1987年5月4日 102（e）日期1987年5月4日PCT提交1986年8月29日PCT公布。第WO87 / 015222B号公开日期：1987年3月12日。一种使III-V族晶体易于在III-V族晶体上形成的新方法，使得前一晶格与后一晶体匹配。更具体地说，容易在III-V族晶体基板上产生超晶格结构，超晶格结构由与第一III-V族（以下称为“III1-V1”）二元晶体层基板和与基板类似地匹配的III-V族（III1-III2-V2）三元晶体层。通过选择（III1-V1）晶体的膜厚与（III1-III2-V2）晶体的膜厚之间的比例，可以获得更稳定的超晶格层，使得当超晶格结构混合时自发结晶或通过杂质掺杂，混合结晶的组合物与先前的晶体匹配。

58. 发明授权

US4766092A Method of growing heteroepitaxial InP on Si using Sn substrate implantation 失效
标题翻译：使用Sn衬底植入在Si上生长异质外延InP的方法
公开(公告)号：US4766092A
公开(公告)日：1988-08-23
申请号：US937019
申请日：1986-12-02
申请人： Takao Kuroda , Kenji Hiruma , Hiroyoshi Matsumura
发明人： Takao Kuroda , Kenji Hiruma , Hiroyoshi Matsumura
IPC分类号： H01L21/20 , H01L21/203 , H01L21/205 , H01L21/265 , H01S5/00
CPC分类号： H01L21/26506 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/02658 , H01S2301/173 , H01S2304/04 , H01S5/021 , H01S5/0422 , H01S5/305 , H01S5/3054 , Y10S148/072 , Y10S148/097 , Y10S148/119 , Y10S438/933 , Y10S438/938
摘要： When a semiconductor device is produced by growing epitaxially a compound semiconductor layer on a Si or Ge substrate, lattice matching between the substrate crystal and the compound semiconductor layer to be formed on the substrate can be improved by ion-implanting an ion species element, which increases the lattice constant of Si or Ge as the substrate, into the Si or Ge substrate in order to increase its lattice constant. In comparison with conventional semiconductor devices using Si or Ge into which ion implantation is not made, the semiconductor device produced by the method described above can improve remarkably its characteristics. In the case of a semiconductor laser device, for example, its threshold value drops drastically and its service life can be prolonged remarkably.
摘要翻译：当通过在Si或Ge衬底上外延生长化合物半导体层来制造半导体器件时，可以通过离子注入离子种类元素来改善衬底晶体和待形成在衬底上的化合物半导体层之间的晶格匹配，将作为衬底的Si或Ge的晶格常数增加到Si或Ge衬底中，以增加其晶格常数。与使用不进行离子注入的Si或Ge的常规半导体器件相比，通过上述方法制造的半导体器件可以显着改善其特性。在半导体激光器件的情况下，例如，其阈值急剧下降，使用寿命显着延长。

59. 发明授权

US4509173A Phase-locked semiconductor laser device 失效
标题翻译：锁相半导体激光器件
公开(公告)号：US4509173A
公开(公告)日：1985-04-02
申请号：US366324
申请日：1982-04-07
申请人： Jun-ichi Umeda , Hisao Nakashima , Takashi Kajimura , Takao Kuroda
发明人： Jun-ichi Umeda , Hisao Nakashima , Takashi Kajimura , Takao Kuroda
IPC分类号： H01S5/00 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4068
摘要： A semiconductor laser device is provided with a semiconductor substrate and at least a semiconductor assembly for optical confinement formed on the substrate which includes an active layer and cladding layers. A first electrode is disposed on the semiconductor assembly and a second electrode is disposed on the semiconductor substrate. To provide a phase-locked semiconductor laser device of high quality, a plurality of regions are provided in the semiconductor assembly which, in effect, cause a variation of a complex refractive index for a laser beam in a direction intersecting with a traveling direction of the laser beam. These regions can be discretely disposed over or under the active layer and give rise to a nonlinear interaction between adjacent laser emission regions formed by the plurality of regions.
摘要翻译：半导体激光装置设置有半导体基板和至少一个形成在基板上的用于光学限制的半导体组件，该半导体组件包括有源层和包层。第一电极设置在半导体组件上，第二电极设置在半导体衬底上。为了提供高质量的锁相半导体激光器件，在半导体组件中设置多个区域，其实际上导致激光束在与行进方向相交的方向上的复合折射率的变化激光束。这些区域可以离散地设置在有源层上或下方，并产生由多个区域形成的相邻激光发射区域之间的非线性相互作用。

60. 发明授权

US4435897A Method for fabricating solid-state image sensor 失效
标题翻译：固态图像传感器的制作方法
公开(公告)号：US4435897A
公开(公告)日：1984-03-13
申请号：US320845
申请日：1981-11-12
申请人： Takao Kuroda , Kenju Horii
发明人： Takao Kuroda , Kenju Horii
IPC分类号： H01L27/148 , H01L31/113 , H01L31/18 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/3728 , H04N5/374 , H01L31/10
CPC分类号： H01L31/1804 , H01L27/14887 , H01L31/1133 , Y02E10/547 , Y02P70/521
摘要： In the fabrication of a solid-state image sensor of the type having a plurality of photoelectric transducer means on a semiconductor substrate of one conductivity, excessive charge drain regions each provided with a plurality of first electrodes and second electrodes which function as a gate for controlling the drain of excessive charge, impurities or dopants of the other conductivity are introduced immediately below each of the regions at which the first electrodes are to be formed; thereafter, the first and second electrodes are formed; and impurities or dopants which are same as the above-described impurities or dopants are introduced while using the first and second electrodes as a masking pattern, whereby the photoelectric transducer means and drain regions are formed.
摘要翻译：在具有一个导电性的半导体衬底上具有多个光电传感器装置的类型的固态图像传感器的制造中，每个设置有多个第一电极和第二电极的过多的电荷漏极区域用作控制栅极过量电荷的漏极，另一种导电性的杂质或掺杂剂被立即引入要形成第一电极的每个区域的下方; 此后，形成第一和第二电极; 并且在使用第一和第二电极作为掩模图案的同时引入与上述杂质或掺杂剂相同的杂质或掺杂剂，由此形成光电传感器装置和漏极区域。

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