专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4947224A Solid state image sensing device with photodiode to reduce smearing 失效
标题翻译：具有光电二极管的固态图像感测装置，以减少拖尾
公开(公告)号：US4947224A
公开(公告)日：1990-08-07
申请号：US251026
申请日：1988-09-26
申请人： Takao Kuroda , Toshihiro Kuriyama , Kenju Horii , Hiroyuki Mizuno
发明人： Takao Kuroda , Toshihiro Kuriyama , Kenju Horii , Hiroyuki Mizuno
IPC分类号： H01L27/148
CPC分类号： H01L27/14887 , H01L27/14831
摘要： In a solid state image sensing device of P-conductivity type well, photo-electro converting region (1) are configured to have a larger area as the depth increases, so that excessive electric charges generated in the p-conductivity type well are easily transferred from expanded peripheral parts (7) at the bottom (1b) to channel (3), without being undesirably transferred downward through thin p-conductivity type region 6 to substrate (4), and smear electric charges which has been generated in a thin p-conductivity type well under the photo-electro converting region in the conventional device is suppressed, to effectively decrease the smear phenomenon.
摘要翻译：在P导电型阱的固体摄像装置中，光电转换区域（1）被配置为随着深度增加而具有较大面积，使得在p导电型阱中产生的过多电荷容易转移从底部（1b）的扩大的周边部分（7）到通道（3），而不会不期望地通过薄的p导电类型区域6向下传递到基板（4），并且将在薄p中产生的电荷在传统器件的光电转换区域下良好的导电型被抑制，有效地减少了涂抹现象。

2. 发明授权

US5041392A Method for making solid state image sensing device 失效
标题翻译：制作固态摄像装置的方法
公开(公告)号：US5041392A
公开(公告)日：1991-08-20
申请号：US544620
申请日：1990-06-27
申请人： Takao Kuroda , Toshihiro Kuriyama , Kenju Horii , Hiroyuki Mizuno
发明人： Takao Kuroda , Toshihiro Kuriyama , Kenju Horii , Hiroyuki Mizuno
IPC分类号： H01L27/148
CPC分类号： H01L27/14887 , H01L27/14831
摘要： In a solid state image sensing device of p-conductivity type well, photo-electro converting region (1) are configurated to have larger area as depth increases, so that excessive electric charges generated in the p-conductivity type well are easily transferred from expanded peripheral parts (7) at the bottom (1b) to channel (3), without being undesirably transferred downward through thin p-conductivity type region 6 to substrate (4), and smear electric charges which has been generated in a thin p-conductivity type well under the photo-electro converting region in the conventional device is suppressed, to effectively decrease the smear phenomenon.

3. 发明授权

US07671386B2 Solid-state imaging device, signal charge detection device, and camera 失效
标题翻译：固态成像装置，信号充电检测装置和相机
公开(公告)号：US07671386B2
公开(公告)日：2010-03-02
申请号：US11617173
申请日：2006-12-28
申请人： Toshihiro Kuriyama
发明人： Toshihiro Kuriyama
IPC分类号： H01L27/148
CPC分类号： H01L27/14831 , H01L29/76816 , H01L2924/0002 , H01L2924/00
摘要： The solid-state imaging device of the present invention includes: a floating diffusion capacity unit which is formed on a semiconductor substrate, and is operable to hold signal charges derived from incident light; an amplifier which is operable to convert the signal charges held in the floating diffusion capacity unit into a voltage; the first wire which connects the floating diffusion capacity unit to an input of the amplifier; and a second wire which is made of the same material as the first wire, formed in the same layer as the first wire, arranged around the first wire at least along long sides of the first wire, and electrically insulated from the first wire.
摘要翻译：本发明的固态成像装置包括：浮置扩散能量单元，其形成在半导体衬底上，并且可操作以保持源自入射光的信号电荷; 放大器，其可操作以将保持在所述浮动扩散容量单元中的信号电荷转换成电压; 将浮动扩散容量单元连接到放大器的输入端的第一线; 以及与第一线材相同的材料制成的第二线材，其形成在与第一线材相同的层中，至少沿着第一线材的长边布置在第一线材周围，并与第一线材电绝缘。

4. 发明授权

US07473944B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US07473944B2
公开(公告)日：2009-01-06
申请号：US11333924
申请日：2006-01-18
申请人： Toshihiro Kuriyama
发明人： Toshihiro Kuriyama
IPC分类号： H01L29/768
CPC分类号： H01L27/1463 , H01L27/14636 , H01L27/14812
摘要： A solid-state imaging device includes a semiconductor substrate including: a plurality of light-receptive portions that are arranged one-dimensionally or two-dimensionally; a vertical transfer portion that transfers signal electric charge read out from the light-receptive portions in a vertical direction; a horizontal transfer portion that transfers the signal electric charge transferred by the vertical transfer portion in a horizontal direction; a barrier region adjacent to the horizontal transfer portion, the barrier region letting only surplus electric charge of the horizontal transfer portion pass therethough; a drain region adjacent to the barrier region, into which the surplus electric charge passing through the barrier region is discharged; and an insulation film adjacent to the drain region. A portion of the drain region is located beneath the insulation film.
摘要翻译：一种固态成像装置，包括：半导体基板，包括：一维或二维布置的多个光接收部分; 垂直传送部分，其沿垂直方向传送从光接收部分读出的信号电荷; 水平传送部，其在垂直方向上传送由垂直传送部传送的信号电荷; 与水平转印部分相邻的势垒区域，仅允许水平转印部分的剩余电荷的势垒区域通过; 与阻挡区域相邻的漏极区域，通过阻挡区域的剩余电荷被排出到该漏极区域; 以及与漏区相邻的绝缘膜。漏极区域的一部分位于绝缘膜下方。

5. 发明申请

US20070170470A1 SOLID-STATE IMAGING DEVICE, SIGNAL CHARGE DETECTION DEVICE, AND CAMERA 失效
标题翻译：固态成像装置，信号充电检测装置和摄像机
公开(公告)号：US20070170470A1
公开(公告)日：2007-07-26
申请号：US11617173
申请日：2006-12-28
申请人： Toshihiro Kuriyama
发明人： Toshihiro Kuriyama
IPC分类号： H01L29/768
CPC分类号： H01L27/14831 , H01L29/76816 , H01L2924/0002 , H01L2924/00
摘要： The solid-state imaging device of the present invention includes: a floating diffusion capacity unit which is formed on a semiconductor substrate, and is operable to hold signal charges derived from incident light; an amplifier which is operable to convert the signal charges held in the floating diffusion capacity unit into a voltage; the first wire which connects the floating diffusion capacity unit to an input of the amplifier; and a second wire which is made of the same material as the first wire, formed in the same layer as the first wire, arranged around the first wire at least along long sides of the first wire, and electrically insulated from the first wire.
摘要翻译：本发明的固态成像装置包括：浮置扩散能量单元，其形成在半导体衬底上，并且可操作以保持源自入射光的信号电荷; 放大器，其可操作以将保持在所述浮动扩散容量单元中的信号电荷转换成电压; 将浮动扩散容量单元连接到放大器的输入端的第一线; 以及与第一线材相同的材料制成的第二线材，其形成在与第一线材相同的层中，至少沿着第一线材的长边布置在第一线材周围，并与第一线材电绝缘。

6. 发明授权

US06751054B2 Thin-film magnetic head for perpendicular magnetic recording having main magnetic pole layer on flat surface 失效
标题翻译：用于垂直磁记录的薄膜磁头，在平面上具有主磁极层
公开(公告)号：US06751054B2
公开(公告)日：2004-06-15
申请号：US09903223
申请日：2001-07-11
申请人： Kiyoshi Sato , Toshinori Watanabe , Toshihiro Kuriyama
发明人： Kiyoshi Sato , Toshinori Watanabe , Toshihiro Kuriyama
IPC分类号： G11B5147
CPC分类号： G11B5/1278 , G11B5/313
摘要： A thin-film magnetic head for perpendicular magnetic recording comprising an auxiliary magnetic pole layer; a main magnetic pole layer; a conductive coil layer in a spiral shape which is disposed between the main magnetic pole layer and the auxiliary magnetic pole layer and which cross the magnetic circuit; and insulating layers electrically insulating the auxiliary magnetic pole layer and the main magnetic pole layer from the conductive coil layer. The insulating layers have flat surfaces formed at the sides further from the auxiliary magnetic pole layer, the front end portion of the main magnetic pole layer is provided on one of the flat surfaces, and the conductive coil layer is disposed under the main magnetic pole layer so that a part of the conductive coil layer opposes the front end portion of the main magnetic pole layer.
摘要翻译：一种用于垂直磁记录的薄膜磁头，包括辅助磁极层; 主磁极层; 螺旋形状的导电线圈层，其设置在主磁极层和辅助磁极层之间并与磁路交叉; 以及将辅助磁极层和主磁极层与导电线圈层电绝缘的绝缘层。绝缘层具有形成在辅助磁极层外侧的平面，主磁极层的前端部设置在一个平面上，导电线圈层配置在主磁极层的下方使得导电线圈层的一部分与主磁极层的前端部相对。

7. 发明授权

US06498103B2 Method for manufacturing solid-state imaging device 失效
公开(公告)号：US06498103B2
公开(公告)日：2002-12-24
申请号：US09903411
申请日：2001-07-11
申请人： Rieko Nishio , Takumi Yamaguchi , Toshihiro Kuriyama , Hiroyuki Senda
发明人： Rieko Nishio , Takumi Yamaguchi , Toshihiro Kuriyama , Hiroyuki Senda
IPC分类号： H01L21311
CPC分类号： H01L27/14692
摘要： A method for manufacturing a solid-state imaging device includes forming a transfer channel portion and a light-receiving portion in a silicon substrate; forming a silicon oxide film on the silicon substrate; forming a silicon nitride film on the silicon oxide film, the silicon nitride film acting as a gate insulating film together with the silicon oxide film above the transfer channel portion and acting as an anti-reflection film above the light-receiving portion; forming a protection film on the silicon nitride film; forming a polysilicon film above the silicon nitride film via the protection film at least above the light-receiving portion; and etching the polysilicon film so as to form a transfer electrode above the transfer channel portion. The etching of the polysilicon film is carried out so that the polysilicon film is removed above the light-receiving portion while the protection portion remains.

8. 发明授权

US06351003B1 Solid-state imaging device and manufacturing method therefor 有权
公开(公告)号：US06351003B1
公开(公告)日：2002-02-26
申请号：US09290122
申请日：1999-04-12
申请人： Toshihiro Kuriyama
发明人： Toshihiro Kuriyama
IPC分类号： H01L31103
CPC分类号： H01L27/14689 , H01L27/14609
摘要： A solid-state imaging device comprises a plurality of pixels, each pixel comprising a semiconductor substrate of a first conductivity type; a photo-receiving portion of a second conductivity type formed in the semiconductor substrate; a detecting portion of the second conductivity type formed in the semiconductor substrate; an insulating film formed on the semiconductor substrate; a transfer gate electrode formed on the insulating film at lest between the photo-receiving portion and the detecting portion; and a read-out circuit, which is electrically connected to the detecting portion. A diffusion region of the same conductivity type as the detecting portion is formed in a region of the semiconductor substrate that is adjacent to an end of the detecting portion near the gate electrode and separate from the photo-receiving portion. An impurity concentration in the photo-receiving portion and an impurity concentration in the diffusion region are lower than an impurity concentration in the detecting portion. With this solid-state imaging device and with the method for producing the same, a solid-state imaging device is provided that reduces crystal defects in the photo-receiving portion and improves the output image quality.

9. 发明授权

US06350487B1 Spin-valve type thin film element and its manufacturing method 有权
标题翻译：旋转阀型薄膜元件及其制造方法
公开(公告)号：US06350487B1
公开(公告)日：2002-02-26
申请号：US09515971
申请日：2000-02-29
申请人： Naoya Hasegawa , Toshihiro Kuriyama
发明人： Naoya Hasegawa , Toshihiro Kuriyama
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F41/302
摘要： A spin-valve type thin film element includes an antiferromagnetic layer, a pinned magnetic layer, a free magnetic layer, a non-magnetic electrically conductive layer, a bias layer, and an electrically conductive layer. The magnetization direction of the pinned magnetic layer in the end regions in relation to the track width is fixed in the direction of the leakage magnetic field from a recording medium, and the magnetization direction of the pinned magnetic layer in the central region is fixed in the direction inclined in relation to the direction of the leakage magnetic field from the recording medium. A method for manufacturing a spin-valve type thin film element includes the steps of forming a multi-layered film, magnetic annealing at a temperature T1, patterning the multi-layered film into a predetermined shape, forming a bias layer on both sides of the multi-layered film, magnetizing the bias layer, annealing without applying a magnetic field at a temperature T2, and magnetizing the bias layer.
摘要翻译：自旋阀型薄膜元件包括反铁磁层，钉扎磁性层，自由磁性层，非磁性导电层，偏置层和导电层。端部区域中的钉扎磁性层相对于轨道宽度的磁化方向在来自记录介质的泄漏磁场的方向上固定，并且中心区域中的被钉扎磁性层的磁化方向固定在相对于来自记录介质的泄漏磁场的方向倾斜的方向。一种自旋阀型薄膜元件的制造方法包括以下步骤：在温度T1下形成多层膜，进行磁性退火，将多层膜图案化成预定的形状，在多层膜，对偏置层进行磁化，在温度T2下不施加磁场进行退火，以及使偏置层磁化。

10. 发明授权

US6150045A Spin-valve type magnetoresistive thin film element and its manufacturing method 失效
标题翻译：自旋阀型磁阻薄膜元件及其制造方法
公开(公告)号：US6150045A
公开(公告)日：2000-11-21
申请号：US153923
申请日：1998-09-16
申请人： Masamichi Saito , Toshihiro Kuriyama
发明人： Masamichi Saito , Toshihiro Kuriyama
IPC分类号： G11B5/39 , H01F10/30 , H01F10/32 , H01F41/30 , H01F41/32 , H01L43/08 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , H01F10/3268 , H01F41/302 , H01L43/08 , G11B2005/3996 , Y10S428/90 , Y10T428/1121
摘要： The pinned magnetic layer 2 is composed of a track width region 2' and a dead region 2", the track width region 2' being formed at a spaced apart relation to the bias region 5. Accordingly, magnetization of the track width region 2' is not so strongly affected by the bias region 5, thereby magnetization is fixed along the Y-direction at almost entire region of the track width region 2'. Therefore, the track width region 2' and the free magnetic region are in a crossing relation with each other giving a proper asymmetry in the entire region of the track width region 2'.
摘要翻译：钉扎磁性层2由轨道宽度区域2'和死区域2“组成，轨道宽度区域2'以与偏置区域5隔开的关系形成。因此，轨道宽度区域2 '不受偏置区域5的强烈影响，从而在轨道宽度区域2'的几乎整个区域沿着Y方向固定磁化。因此，轨道宽度区域2'和自由磁性区域彼此交叉关系，在轨道宽度区域2'的整个区域中给出适当的不对称性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式