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51. 发明申请

US20090061092A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 有权
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20090061092A1
公开(公告)日：2009-03-05
申请号：US11910983
申请日：2006-04-07
申请人： Takatoshi Kameshima , Kohei Kawamura , Yasuo Kobayashi
发明人： Takatoshi Kameshima , Kohei Kawamura , Yasuo Kobayashi
IPC分类号： C23C16/36 , C23C16/42
CPC分类号： C23C16/4404 , C23C16/4581 , H01L21/02167 , H01L21/02274 , H01L21/3185
摘要： A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table.
摘要翻译：一种成膜方法的特征在于该方法具有将包括无机硅烷气体的处理气体引入到其中布置由包括金属氧化物的陶瓷构成的安装台的处理室中的步骤，所述处理室包括具有含硅非金属薄膜的所述安装台的表面; 将要处理的基板安装在预先涂覆有非金属薄膜的安装台上的步骤; 以及将含有有机硅烷气体的处理气体导入处理室，在安装在安装台上的基板的表面上形成含硅非金属薄膜的工序。

52. 发明授权

US07307019B2 Method for supercritical carbon dioxide processing of fluoro-carbon films 失效
标题翻译：氟碳膜超临界二氧化碳加工方法
公开(公告)号：US07307019B2
公开(公告)日：2007-12-11
申请号：US10711649
申请日：2004-09-29
申请人： Kohei Kawamura , Akira Asano , Koutarou Miyatani , Joseph T. Hillman , Bentley Palmer
发明人： Kohei Kawamura , Akira Asano , Koutarou Miyatani , Joseph T. Hillman , Bentley Palmer
IPC分类号： H01L21/302
CPC分类号： H01L21/76826 , H01L21/0212 , H01L21/02274 , H01L21/02329 , H01L21/0234 , H01L21/02343 , H01L21/31058 , H01L21/3127 , H01L21/32051 , H01L21/76814
摘要： A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.
摘要翻译：一种用于处理用于将电介质膜整合到半导体器件中的氟碳电介质膜的方法。该方法包括提供其上沉积有氟碳膜的基材，该膜具有含有污染物的暴露表面，并用超临界二氧化碳流体处理暴露表面以清洁污染物的暴露表面并提供表面终止。超临界二氧化碳处理改善了在氟碳电介质膜的表面上形成的含有金属的膜的膜结构的粘附性和电性能。

53. 发明申请

US20070131171A1 Plasma process device and plasma process method 有权
标题翻译：等离子体工艺装置和等离子体处理方法
公开(公告)号：US20070131171A1
公开(公告)日：2007-06-14
申请号：US11656379
申请日：2007-01-23
申请人： Koichi Takatsuki , Hikaru Yoshitaka , Shigeo Ashigaki , Yoichi Inoue , Takashi Akahori , Shuuichi Ishizuka , Syoichi Abe , Takashi Suzuki , Kohei Kawamura , Hidenori Miyoshi , Gishi Chung , Yasuhiro Oshima , Hiroyuki Takahashi
发明人： Koichi Takatsuki , Hikaru Yoshitaka , Shigeo Ashigaki , Yoichi Inoue , Takashi Akahori , Shuuichi Ishizuka , Syoichi Abe , Takashi Suzuki , Kohei Kawamura , Hidenori Miyoshi , Gishi Chung , Yasuhiro Oshima , Hiroyuki Takahashi
IPC分类号： C23C16/00
CPC分类号： H01J37/32009 , H01J37/3244 , H01J37/32541
摘要： That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, die thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.
摘要翻译：与基座10相对的电极板20的表面具有突起形状。电极板20在突出部20a安装在屏蔽环26的开口26a中。此时，突出部20a的芯片厚度与屏蔽环26的厚度大致相同。因此，电极板20和屏蔽环26形成大致相同的平面。突起部20a的主表面的直径为晶片W的直径的1.2〜1.5倍。电极板20例如由SiC形成。

54. 发明申请

US20070074353A1 Step pile fabric and process for producing the same 审中-公开
标题翻译：阶梯织物及其生产方法
公开(公告)号：US20070074353A1
公开(公告)日：2007-04-05
申请号：US10583242
申请日：2004-12-24
申请人： Minoru Kuroda , Kohei Kawamura , Sohei Nishida , Masahiko Mihoichi
发明人： Minoru Kuroda , Kohei Kawamura , Sohei Nishida , Masahiko Mihoichi
IPC分类号： C11D3/00
CPC分类号： D03D27/00 , D01F6/38 , D06C23/04 , D06P3/854 , D06P5/20 , Y10T428/23929 , Y10T428/23957
摘要： An increased number of colors can be assorted in the down hair part of a step pile fabric more easily than before by carrying out dry heat treatment of a pile fabric comprising an acrylic shrinkable fiber that can be dyed in a specific low-temperature region. There is provided a step pile fabric obtained by treating a pile fabric comprising an acrylic shrinkable fiber, which comprises comprising an acrylic copolymer comprising 0.5 to 10 wt % of a sulfonic acid group-containing monomer, dyed at 55 to 85° C., with dry heat at 110 to 150° C. for 20 minutes or less, the acrylic shrinkable fiber having a shrinkage percentage of 18% or more calculated by the following formula (1): Shrinkage percentage (%)=100×(1−Sa/Sb) (1)wherein Sb represents a pile length of the down hair component before the dry heat treatment, and Sa represents a pile length of the down hair part (component) after the dry heat treatment.
摘要翻译：通过对可以在特定的低温区域染色的丙烯酸类收缩性纤维的绒头织物进行干热处理，可以更容易地在步骤绒毛织物的羽毛部分中增加颜色的增加。提供了一种通过处理包含丙烯酸类收缩纤维的绒头织物而获得的阶绒绒织物，其包括含有0.5至10重量％的含有磺酸基的单体的丙烯酸共聚物，其在55至85℃下染色，在110〜150℃下干燥20分钟以下，通过下式（1）计算出的收缩率为18％以上的丙烯酸类收缩性纤维：<？在线式说明=“In-line 公式“end =”lead“？>收缩率（％）= 100x（1-Sa / Sb）（1）<？in-line-formula description =”In-line formula“end =”tail“？>其中Sb 表示干热处理前的羽绒毛组件的绒头长度，Sa表示干燥热处理后的羽毛部（绒毛部分）的绒头长度。

55. 发明授权

US06311908B1 Crushing method for waste containing materials unfit for crushing and apparatus for its practice 有权
标题翻译：用于破碎粉碎的材料的粉碎方法及其实践设备
公开(公告)号：US06311908B1
公开(公告)日：2001-11-06
申请号：US09462750
申请日：2000-01-14
申请人： Takao Kajiyama , Kohei Kawamura , Ryozou Kushida , Hiroshi Arito
发明人： Takao Kajiyama , Kohei Kawamura , Ryozou Kushida , Hiroshi Arito
IPC分类号： B02C1806
CPC分类号： B02C18/14 , B02C18/142 , B02C18/145 , B02C18/2233 , B02C19/22 , B02C2018/147
摘要： The present invention is designed to perform a primary crushing operation including hooking and crushing of the top face part of waste through cooperation of a supporting projection and a first crushing roller. The first crushing roller also conveys the waste. A secondary crushing operation includes crushing of a bottom face part and the top face part of the waste W, while lifting the waste is performed by the first crushing roller and a second crushing roller. And, a tertiary crushing operation including crushing of the object material, that is to be crushed, into small pieces and discharging of these pieces separately from the materials that are unfit for crushing is performed by the second crushing roller and a third crushing roller. The primary crushing operation, secondary crushing operation and tertiary crushing operation are performed one after another, for the purpose of separating and discharging materials that are unfit for crushing without deforming them, and accurately crushing the object material such as frame member, etc., even if the waste is directly submitted to the crushing operations without removing the materials that are unfit for crushing such as a motor, compressor, etc. The recovery ratio of valuables is thus improved upon.
摘要翻译：本发明旨在进行主要的粉碎操作，包括通过支撑突起和第一破碎辊的协作来对废物的顶面部分进行钩压和破碎。第一台破碎辊也传送废物。次级破碎操作包括破碎废物W的底面部分和顶面部分，同时由第一破碎辊和第二破碎辊进行废物的提取。并且，通过第二破碎辊和第三破碎辊进行三次破碎操作，包括将要粉碎的物体粉碎成小块并将其与不适于粉碎的材料分开排出。一次破碎操作，二次破碎操作和三次破碎操作一个接一个地进行，用于分离和排出不会变形的不适于粉碎的材料，并且甚至准确地粉碎诸如框架构件等的物体材料如果废物直接进入破碎作业，而不去除不适用于电动机，压缩机等破碎的材料，则贵重物品的回收率得到改善。

56. 发明授权

US6155200A ECR plasma generator and an ECR system using the generator 失效
标题翻译： ECR等离子发生器和使用发电机的ECR系统
公开(公告)号：US6155200A
公开(公告)日：2000-12-05
申请号：US109064
申请日：1998-07-02
申请人： Yasuhiro Horiike , Kohei Kawamura
发明人： Yasuhiro Horiike , Kohei Kawamura
IPC分类号： C23C14/35 , C23C16/509 , H01J37/32 , C23C16/00 , H05H1/00 , H05H1/02
CPC分类号： H01J37/32623 , C23C14/35 , C23C16/509 , H01J37/32678
摘要： In an ECR plasma generator, radio frequency ranging from 3 to 300 MHz is applied from a radio frequency power supply to an electrode which is provided in a chamber having an exhaust system and which serves as a shower head for gas introduction, and power is supplied to a coil provided at the outer periphery of the chamber, so as to form a magnetic field an integer number of times as large as a resonant magnetic field corresponding to the applied radio frequency, parallel with the direction of an electric field and to generate ECR plasma in an atmosphere of the supplied process gas.
摘要翻译：在ECR等离子体发生器中，从射频电源向设置在具有排气系统的室内的电极施加3〜300MHz的射频，其作为用于气体导入的喷头，并且供电设置在室的外周设置的线圈，以形成与施加的射频相对应的与电场方向平行的谐振磁场的整数倍的磁场，并产生ECR 在所提供的处理气体的气氛中的等离子体。

57. 发明授权

US5531834A Plasma film forming method and apparatus and plasma processing apparatus 失效
标题翻译：等离子体成膜方法及装置及等离子体处理装置
公开(公告)号：US5531834A
公开(公告)日：1996-07-02
申请号：US273878
申请日：1994-07-12
申请人： Shuichi Ishizuka , Kohei Kawamura , Jiro Hata , Akira Suzuki
发明人： Shuichi Ishizuka , Kohei Kawamura , Jiro Hata , Akira Suzuki
IPC分类号： C23C16/509 , H01J37/32 , H01L21/3105 , C23C16/00
CPC分类号： H01J37/32082 , C23C16/509 , H01J37/3266 , H01L21/31051
摘要： A plasma film forming apparatus comprises gas supply means for feeding a processing gas into a processing chamber, a first electrode opposed to an object of processing in the processing chamber, a second electrode in the form of a flat coil facing the first electrode across the object of processing, pressure regulating means for keeping the pressure in the processing chamber at 0.1 Torr or below, heating means for heating the object of processing to a predetermined temperature, and application means for applying radio-frequency power between the first and second electrodes, whereby the processing gas is converted into a plasma such that a film is formed on the surface of the object of processing through reaction of ions or active seeds in the plasma. When radio-frequency power is applied between the pair of electrodes, a radio-frequency electric field is formed. Since one of the electrodes is the flat coil, however, a magnetic field is formed. As a result, the processing gas is converted into a plasma by electrical and magnetic energies. Accordingly, the processing gas can be changed into a plasma under low pressure, and a high-density plasma can be generated even under a pressure of 0.1 Torr or below. Thus, the efficiency of ion application to the surface of the object of processing is high, and the effect of impurity extraction is great.
摘要翻译：等离子体膜形成装置包括用于将处理气体供给到处理室中的气体供给装置，与处理室中的处理对象相对的第一电极，与面对第一电极的平面线圈形式的第二电极处理用的压力调节机构，将处理室内的压力保持在0.1Torr以下，将加工对象物加热到预定温度的加热装置，以及在第一和第二电极之间施加射频功率的施加装置，由此处理气体转化为等离子体，使得通过等离子体中的离子或活性种子的反应在加工对象的表面上形成膜。当在一对电极之间施加射频电力时，形成射频电场。然而，由于电极中的一个是扁平线圈，所以形成磁场。结果，处理气体通过电和能量转换成等离子体。因此，处理气体可以在低压下变为等离子体，即使在0.1Torr以下的压力下也能够产生高密度的等离子体。因此，离子施加到加工对象表面的效率高，杂质提取的效果大。

58. 发明授权

US5308791A Method and apparatus for processing surface of semiconductor layer 失效
标题翻译：半导体层表面处理方法及装置
公开(公告)号：US5308791A
公开(公告)日：1994-05-03
申请号：US848357
申请日：1992-03-09
申请人： Yasuhiro Horiike , Kohei Kawamura
发明人： Yasuhiro Horiike , Kohei Kawamura
IPC分类号： C23F4/00 , H01L21/00 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/3065
CPC分类号： H01L21/02046 , H01L21/67028 , Y10S438/906 , Y10S438/974
摘要： An apparatus for processing the surface of an Si wafer includes a vacuum cleaning chamber in which said Si wafer is housed. He gas is supplied into the cleaning chamber and micro-wave and magnetic field are applied to the He gas to generate excited species which emit vacuum ultraviolet. The vacuum ultraviolet is radiated onto the wafer surface to enable its energy to cut bonds between Si atoms of said wafer and O atoms and forming a natural oxide film on the wafer surface. Ar gas is also supplied into the cleaning chamber to create ions of said Ar gas due to energy added from said excited species. Said ions are supplied onto the wafer surface to form floating potential above said wafer surface. Said ions collide against said wafer surface to eliminate O atoms from said wafer surface. A process chamber is connected to the cleaning chamber through a load lock chamber. Al film is formed on the wafer surface, from which the natural oxide film has been eliminated, in the process chamber.
摘要翻译：一种用于处理Si晶片表面的设备包括其中容纳有所述Si晶片的真空清洁室。将He气供应到清洗室中，并将微波和磁场施加到He气体以产生发射真空紫外线的激发物质。将真空紫外线辐射到晶片表面上，使其能量切割所述晶片的Si原子和O原子之间的键，并在晶片表面上形成天然氧化物膜。由于从所述激发物质添加的能量，也将Ar气体供应到清洁室中以产生所述Ar气体的离子。所述离子被提供到晶片表面上以在所述晶片表面上方形成浮动电位。所述离子与所述晶片表面碰撞以从所述晶片表面消除O原子。处理室通过负载锁定室连接到清洁室。在处理室中在晶片表面上形成Al膜，其中已经除去了自然氧化膜。

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