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51. 发明申请

US20090104544A1 PELLICLE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：制造方法及其制造方法
公开(公告)号：US20090104544A1
公开(公告)日：2009-04-23
申请号：US12251582
申请日：2008-10-15
申请人： Yoshihiro KUBOTA , Shoji AKIYAMA , Toshihiko SHINDOO
发明人： Yoshihiro KUBOTA , Shoji AKIYAMA , Toshihiko SHINDOO
IPC分类号： G03F1/00
CPC分类号： G03F1/62 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A pellicle of the present invention is provided with a silicon crystal film, the absorption coefficient of which is 0.005/nm or lower with respect to light having a wavelength of 13.5 nm, as a pellicle film. The silicon crystal film is an indirect transition type semiconductor film and, therefore, the optical absorption coefficient thereof is relatively low. In particular, a single-crystal silicon film has a lower absorption coefficient than an amorphous silicon film and a polysilicon film. Thus, it is easy to obtain desired transmissivity required of a pellicle film for EUV from the single-crystal silicon film. Such a pellicle film as described above can be fabricated from an SOI film obtained by thin-filming an SOI substrate (including an SOQ substrate and an SOG substrate).
摘要翻译：作为防护薄膜，本发明的防护薄膜组件具有相对于波长13.5nm的光的吸收系数为0.005nm以下的硅晶体膜。硅晶体膜是间接跃迁型半导体膜，因此其光吸收系数相对较低。特别地，单晶硅膜的吸收系数低于非晶硅膜和多晶硅膜。因此，从单晶硅膜容易获得EUV用防护薄膜所需的透射率。这样的防护薄膜可以通过SOI基板（包括SOQ基板和SOG基板）的薄膜得到的SOI膜来制造。

52. 发明申请

US20080305318A1 SILICON ON INSULATOR (SOI) WAFER AND PROCESS FOR PRODUCING SAME 审中-公开
标题翻译：绝缘体硅（SOI）波形及其制造方法
公开(公告)号：US20080305318A1
公开(公告)日：2008-12-11
申请号：US12163785
申请日：2008-06-27
申请人： Atsuo Ito , Yoshihiro Kubota , Kiyoshi Mitani
发明人： Atsuo Ito , Yoshihiro Kubota , Kiyoshi Mitani
IPC分类号： B32B27/32 , H01L21/30
CPC分类号： H01L21/76256 , C30B29/06 , C30B33/00 , H01L27/12
摘要： In a manufacturing method of manufacturing a silicon on insulator (SOI) wafer, a single crystal silicon whose surface is an N region on an outer side of an OSF region, is grown and sliced to fabricate an N region single crystal silicon. An ion injection layer is formed within the N region single crystal silicon wafer by injecting a hydrogen ion or a rare gas ion from a surface of the N region single crystal silicon wafer; the ion injection surface of the N region single crystal silicon wafer and/or a surface of the transparent insulation substrate is processed using plasma and/or ozone. The ion injection surface is bonded to the surface of the transparent insulation substrate by bringing them into close contact with each other at room temperature. An SOI layer is formed by mechanically peeling the single crystal silicon wafer.
摘要翻译：在制造绝缘体上硅（SOI）晶片的制造方法中，生长表面为OSF区域外侧的N区的单晶硅，并切片以制造N区单晶硅。通过从N区域单晶硅晶片的表面注入氢离子或稀有气体离子，在N区域单晶硅晶片内形成离子注入层; 使用等离子体和/或臭氧处理N区域单晶硅晶片的离子注入表面和/或透明绝缘衬底的表面。离子注入表面通过在室温下彼此紧密接触而结合到透明绝缘基板的表面。通过机械剥离单晶硅晶片形成SOI层。

53. 发明申请

US20080305317A1 SILICON ON INSULATOR (SOI) WAFER AND PROCESS FOR PRODUCING SAME 有权
标题翻译：绝缘体硅（SOI）波形及其制造方法
公开(公告)号：US20080305317A1
公开(公告)日：2008-12-11
申请号：US12163764
申请日：2008-06-27
申请人： ATSUO ITO , YOSHIHIRO KUBOTA , KIYOSHI MITANI
发明人： ATSUO ITO , YOSHIHIRO KUBOTA , KIYOSHI MITANI
IPC分类号： B32B27/32 , H01L21/30
CPC分类号： H01L21/84 , H01L21/76254 , H01L27/1203 , H01L29/78603
摘要： In a manufacturing method for manufacturing a silicon on insulator (SOI) wafer, an ion injection layer is formed within the wafer, by injecting a hydrogen ion or a rare gas ion from a surface of the single crystal silicon wafer, the ion injection surface of the single crystal silicon wafer and/or a surface of the transparent insulation substrate is processed using plasma and/or ozone, the ion injection surface of the single crystal silicon wafer is bonded to the surface of the transparent insulation substrate, by bringing them into close contact with each other at room temperature, with the processed surface(s) as bonding surface(s), and an SOI layer is formed on the transparent insulation substrate, by mechanically peeling the single crystal silicon wafer by giving an impact to the ion injection layer.
摘要翻译：在制造绝缘体上硅（SOI）晶片的制造方法中，通过从单晶硅晶片的表面注入氢离子或稀有气体离子，在晶片内形成离子注入层，离子注入层使用等离子体和/或臭氧处理单晶硅晶片和/或透明绝缘基板的表面，通过使单晶硅晶片的离子注入表面接近透明绝缘基板的表面，在室温下彼此接触，将处理后的表面作为接合表面，并且通过对单晶硅晶片进行机械剥离而对透明绝缘基板形成冲击，形成SOI层层。

54. 发明申请

US20080299376A1 SILICON ON INSULATOR (SOI) WAFER AND PROCESS FOR PRODUCING SAME 有权
标题翻译：绝缘体硅（SOI）波形及其制造方法
公开(公告)号：US20080299376A1
公开(公告)日：2008-12-04
申请号：US12163743
申请日：2008-06-27
申请人： ATSUO ITO , YOSHIHIRO KUBOTA , KIYOSHI MITANI
发明人： ATSUO ITO , YOSHIHIRO KUBOTA , KIYOSHI MITANI
IPC分类号： B32B27/32 , H01L21/30
CPC分类号： H01L27/1203 , H01L21/76254 , H01L21/84 , H01L29/78603
摘要： Ion injection is performed to a single crystal silicon wafer to form an ion injection layer, with the ion injection surface of the single crystal silicon wafer and/or the surface of the transparent insulation substrate are/is processed using plasma and/or ozone. The ion injection surface of the single crystal silicon wafer and the surface of the transparent insulation substrate are bonded to each other by bringing them into close contact with each other at room temperature. A silicon on insulator (SOI) wafer is obtained by mechanically peeling the single crystal silicon wafer by giving an impact to the ion injection layer, to form an SOI layer on the transparent insulation substrate, and thermal processing for flattening the SOI layer surface is performed to the SOI wafer, under an atmosphere of an inert gas, a hydrogen gas, and a mixture gas of them.
摘要翻译：对单晶硅晶片进行离子注入以形成离子注入层，使用等离子体和/或臭氧处理单晶硅晶片的离子注入表面和/或透明绝缘基板的表面。单晶硅晶片的离子注入表面和透明绝缘基板的表面通过在室温彼此紧密接触而彼此接合。通过对单晶硅晶片进行机械剥离而对离子注入层产生冲击，在透明绝缘基板上形成SOI层，进行SOI层表面的平坦化处理，得到绝缘体上硅（SOI）晶片在惰性气体，氢气和它们的混合气体的气氛下，向SOI晶片。

55. 发明申请

US20080254595A1 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20080254595A1
公开(公告)日：2008-10-16
申请号：US12076422
申请日：2008-03-18
申请人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
发明人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/2007 , H01L29/78603
摘要： An SOI substrate having no worry about a fluctuation in electrical characteristics due to generation of oxygen donors is provided.A silicon substrate 10 used for bonding is a single-crystal Si substrate in which an interstitial oxygen concentration measured by infrared absorption spectrophotometry is equal to or below 1×1018 cm−3. The interstitial oxygen concentration of the single-crystal silicon substrate is set to 1×1018 cm−3 or below since a degree of formation of oxygen donors is strongly dependent on the interstitial oxygen concentration. When the interstitial oxygen concentration of the crystal silicon substrate is set to 1×1018 cm−3 or below, a fluctuation in electrical characteristics (a resistivity) of a silicon layer (an SOI layer) of an SOI substrate can be suppressed to a practically problem-free level. Such a single-crystal silicon substrate can be readily obtained by an MCZ method that can control a convection of a silicon melt by applying a magnetic field or an FZ method that uses no quartz crucible.
摘要翻译：提供了由于氧供体的产生而不担心电特性波动的SOI衬底。用于结合的硅衬底10是其中通过红外吸收分光光度法测量的间隙氧浓度等于或低于1×10 18 cm -3的单晶Si衬底。单晶硅衬底的间隙氧浓度设定为1×10 8 -3 -3以下，因为供氧体的形成强度依赖于间隙氧浓度。当晶体硅衬底的间隙氧浓度设定为1×10 -3 -3 -3以下时，硅层的电特性（电阻率）的波动（ SOI层）可以被抑制到几乎无问题的水平。这样的单晶硅衬底可以通过MCZ方法容易地获得，MCZ方法可以通过施加磁场或不使用石英坩埚的FZ方法来控制硅熔体的对流。

56. 发明申请

US20080153272A1 Method for manufacturing SOI substrate 审中-公开
标题翻译：制造SOI衬底的方法
公开(公告)号：US20080153272A1
公开(公告)日：2008-06-26
申请号：US11987794
申请日：2007-12-04
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/425 , H01L21/42
CPC分类号： H01L21/76254
摘要： The present invention enables reducing a temperature in a manufacturing process of an SOI substrate.A hydrogen ion is implanted into a surface of a single-crystal Si substrate 10 via an oxide film 11 to form a uniform ion implantation layer 12 at a predetermined depth near a surface of the single-crystal Si Substrate 10. At this time, ion implantation is carried out under a condition that a temperature of the Si substrate 10 is maintained so as not to exceed 400° C. Subsequently, a heat treatment is performed with respect to the single-crystal Si substrate 10 at a temperature of 400° C. or below. This heat treatment is effected to weaken mechanical strength of an “implantation interface” of the ion implantation layer 12 in advance prior to a delamination step, and the heat treatment temperature is set to 400° C. or below in order to suppress occurrence of “micro cavities” and “air bubble growth”. A plasma treatment or an ozone treatment is carried out to joint surfaces of both substrates, and an external impact shock is given in a state where the substrates are bonded to each other to mechanically delaminate a silicon film 13 from a bulk 14 of the single-crystal silicon, thereby obtaining an SOI film 13 provided on a quartz substrate 20 via the oxide film 11.
摘要翻译：本发明能够降低SOI衬底的制造工艺中的温度。通过氧化膜11将氢离子注入单晶Si衬底10的表面，以在单晶Si衬底10的表面附近的预定深度处形成均匀的离子注入层12。此时，在将Si衬底10的温度保持为不超过400℃的条件下进行离子注入。随后，对于单晶Si衬底10进行热处理温度在400℃以下。进行这种热处理以在分层步骤之前预先减弱离子注入层12的“注入界面”的机械强度，并且将热处理温度设定为400℃或更低，以便抑制“ 微腔“和”气泡生长“。对两个基板的接合表面进行等离子体处理或臭氧处理，并且在基板彼此接合的状态下给出外部冲击冲击，以使硅膜13与单芯片14的本体14机械地分层。从而获得经由氧化物膜11设置在石英衬底20上的SOI膜13。

57. 发明申请

US20080121278A1 Method of manufacturing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US20080121278A1
公开(公告)日：2008-05-29
申请号：US11984182
申请日：2007-11-14
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/04 , B05D5/12 , H01L31/0216
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/03921 , H01L31/056 , H01L31/0682 , H01L31/1892 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： There is disclosed a method for manufacturing a single crystal silicon solar cell includes the steps of: implanting hydrogen ions or rare gas ions to a single crystal silicon substrate; performing surface activation on at least one of an ion-implanted surface of the single crystal silicon substrate and a surface of a transparent insulator substrate; bonding the ion-implanted surface of the single crystal silicon substrate and the transparent insulator substrate with the surface-activated surface being set as a bonding surface; applying an impact onto the ion implanted layer to mechanically delaminate the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion regions having a second conductivity type on the delaminated plane side of the single crystal silicon layer; forming a plurality of first conductivity type regions and a plurality of second conductivity type regions on the delaminated plane of the single crystal silicon layer; and forming a light reflection film that covers the plurality of first conductivity type regions and the plurality of second conductivity type regions. There can be provided an optical confinement type single crystal silicon solar cell where a thin-film light conversion layer is made of high-crystallinity single crystal silicon.
摘要翻译：公开了一种用于制造单晶硅太阳能电池的方法，包括以下步骤：将氢离子或稀有气体离子注入单晶硅衬底; 在单晶硅衬底的离子注入表面和透明绝缘体衬底的表面中的至少一个上进行表面活化; 将所述单晶硅衬底的离子注入表面和所述透明绝缘体衬底接合，所述表面激活表面被设置为接合表面; 对离子注入层施加冲击以机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层平面侧形成具有第二导电类型的多个扩散区; 在单晶硅层的分层面上形成多个第一导电型区域和多个第二导电型区域; 以及形成覆盖所述多个第一导电类型区域和所述多个第二导电类型区域的光反射膜。可以提供一种光限制型单晶硅太阳能电池，其中薄膜光转换层由高结晶度单晶硅制成。

58. 发明申请

US20080113489A1 Method for manufacturing semiconductor substrate 审中-公开
标题翻译：半导体衬底的制造方法
公开(公告)号：US20080113489A1
公开(公告)日：2008-05-15
申请号：US11979446
申请日：2007-11-02
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L27/1266 , H01L29/78603
摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.
摘要翻译：将氢离子以1.5×10 17原子/ cm 2以上的剂量注入单晶Si衬底10的表面（主表面）以形成氢离子注入层（离子注入损伤层）11。作为氢离子注入的结果，形成氢离子注入边界12。单晶Si衬底10和低熔点玻璃衬底20结合在一起。键合衬底在相对较低的温度，120℃或更高和250℃或更低（低于支撑衬底的熔点）下加热。此外，施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造半导体衬底。可以提供一种半导体衬底，其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。

59. 发明申请

US20080099066A1 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US20080099066A1
公开(公告)日：2008-05-01
申请号：US11976021
申请日：2007-10-19
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： B05D5/12 , H01L31/00
CPC分类号： H01L31/068 , H01L31/022466 , H01L31/1884 , H01L31/1896 , Y02B10/10 , Y02E10/547
摘要： There is disclosed a method for producing a single crystal silicon solar cell comprising the steps of: implanting at least one of hydrogen ions or rare gas ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent electroconductive adhesive while using the ion implanting surface as a bonding surface; curing and maturing the transparent electroconductive adhesive into a transparent electroconductive film, to bond the single crystal silicon substrate and the transparent insulator substrate to each other; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer. There can be provided a single crystal silicon solar cell where a light conversion layer is provided as a thin-film for effective utilization of silicon as a starting material of the silicon solar cell, which single crystal silicon solar cell is excellent in conversion characteristics and is less in degradation due to light irradiation, and which single crystal silicon solar cell is provided as a see-through type solar cell that is usable as a natural lighting window material of a house or the like.
摘要翻译：公开了一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过离子注入表面将氢离子或稀有气体离子中的至少一种注入到单晶硅衬底中以在单晶硅衬底中形成离子注入层晶体硅衬底; 通过透明导电粘合剂将单晶硅衬底和透明绝缘体衬底彼此紧密接触，同时使用离子注入表面作为结合表面; 将透明导电粘合剂固化并熟化成透明导电膜，将单晶硅衬底和透明绝缘体衬底彼此接合; 对离子注入层施加冲击以在其上机械分层单晶硅衬底以留下单晶硅层; 并在单晶硅层中形成p-n结。可以提供一种单晶硅太阳能电池，其中提供光转换层作为有效利用硅作为硅太阳能电池的起始材料的薄膜，该单晶硅太阳能电池的转换特性优异，并且是由于光照射而导致的劣化较少，并且提供单晶硅太阳能电池作为可用作房屋等的自然采光窗材料的透明型太阳能电池。

60. 发明申请

US20070241095A1 Heating element 有权
标题翻译：加热元件
公开(公告)号：US20070241095A1
公开(公告)日：2007-10-18
申请号：US11783580
申请日：2007-04-10
申请人： Noboru Kimura , Yoshihiro Kubota , Waichi Yamamura , Shoji Kano
发明人： Noboru Kimura , Yoshihiro Kubota , Waichi Yamamura , Shoji Kano
IPC分类号： F27D11/00
CPC分类号： H01L21/67103 , H01L21/67098 , H05B3/143 , H05B2203/003
摘要： There is disclosed a heating element 10 comprising: at least a heat-resistant base member 1; a conductive layer 3 having a heater pattern 3a formed on the heat-resistant base member; a protection layer 4 with an insulating property formed on the conductive layer; and a corrosion-resistant layer 4p having a nitrogen gas permeability of 1×10−2 cm2/sec or less or being made of a compound containing a dopant formed on the protection layer 4. There can be provided a heating element in which a corrosion-resistant layer whose nitrogen gas permeability, resistivity, or hardness are controlled is formed on a protection layer and through which the corrosive gas is difficult to be transmitted even under an environment of a high temperature and a corrosive gas and by which degradation due to corrosion of a conductive layer, particularly, a power-supply-terminal portion can be avoided and additionally which can fulfill a high function as an electrostatic chuck even when having a chuck pattern and which has a long operation life and is capable of being produced at a low cost.
摘要翻译：公开了一种加热元件10，其包括：至少一个耐热底座件1; 具有形成在耐热基体上的加热器图案3a的导电层3; 在导电层上形成具有绝缘性的保护层4; 以及氮气渗透率为1×10 -2 cm 2 / sec以下的耐腐蚀层4p，或者由在保护层上形成的含有掺杂剂的化合物构成第4层。可以提供一种加热元件，其中在保护层上形成氮气渗透性，电阻率或硬度的耐腐蚀层，即使在高温环境下也难以将腐蚀性气体透过并且可以避免腐蚀性气体，并且可以避免由于导电层，特别是电源端子部分的腐蚀而导致的劣化，并且另外，即使当具有卡盘图案也能够实现作为静电卡盘的高功能，并且具有使用寿命长，能够以低成本生产。

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