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1. 发明申请

US20090104544A1 PELLICLE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：制造方法及其制造方法
公开(公告)号：US20090104544A1
公开(公告)日：2009-04-23
申请号：US12251582
申请日：2008-10-15
申请人： Yoshihiro KUBOTA , Shoji AKIYAMA , Toshihiko SHINDOO
发明人： Yoshihiro KUBOTA , Shoji AKIYAMA , Toshihiko SHINDOO
IPC分类号： G03F1/00
CPC分类号： G03F1/62 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A pellicle of the present invention is provided with a silicon crystal film, the absorption coefficient of which is 0.005/nm or lower with respect to light having a wavelength of 13.5 nm, as a pellicle film. The silicon crystal film is an indirect transition type semiconductor film and, therefore, the optical absorption coefficient thereof is relatively low. In particular, a single-crystal silicon film has a lower absorption coefficient than an amorphous silicon film and a polysilicon film. Thus, it is easy to obtain desired transmissivity required of a pellicle film for EUV from the single-crystal silicon film. Such a pellicle film as described above can be fabricated from an SOI film obtained by thin-filming an SOI substrate (including an SOQ substrate and an SOG substrate).
摘要翻译：作为防护薄膜，本发明的防护薄膜组件具有相对于波长13.5nm的光的吸收系数为0.005nm以下的硅晶体膜。硅晶体膜是间接跃迁型半导体膜，因此其光吸收系数相对较低。特别地，单晶硅膜的吸收系数低于非晶硅膜和多晶硅膜。因此，从单晶硅膜容易获得EUV用防护薄膜所需的透射率。这样的防护薄膜可以通过SOI基板（包括SOQ基板和SOG基板）的薄膜得到的SOI膜来制造。

2. 发明申请

US20100084746A1 PROCESS FOR PRODUCING LAMINATED SUBSTRATE AND LAMINATED SUBSTRATE 有权
标题翻译：生产层压基板和层压基板的方法
公开(公告)号：US20100084746A1
公开(公告)日：2010-04-08
申请号：US12550340
申请日：2009-08-28
申请人： Shoji AKIYAMA , Atsuo ITO , Yoshihiro KUBOTA , Koichi TANAKA , Makoto KAWAI , Yuuji TOBISAKA
发明人： Shoji AKIYAMA , Atsuo ITO , Yoshihiro KUBOTA , Koichi TANAKA , Makoto KAWAI , Yuuji TOBISAKA
IPC分类号： H01L29/02 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/31051 , H01L21/76251 , H01L31/1892 , Y02E10/50
摘要： A method of manufacturing a laminated substrate is provided. The method includes: forming an oxide film on at least a surface of a first substrate having a hardness of equal to or more than 150 GPa in Young's modulus, and then smoothing the oxide film; implanting hydrogen ions or rare gas ions, or mixed gas ions thereof from a surface of a second substrate to form an ion-implanted layer inside the substrate, laminating the first substrate and the second substrate through at least the oxide film, and then detaching the second substrate in the ion-implanted layer to form a laminated substrate, heat-treating the laminated substrate and diffusing outwardly the oxide film.
摘要翻译：提供一种制造叠层基板的方法。该方法包括：在杨氏模量下，在硬度为150GPa以上的第一基板的至少表面形成氧化膜，然后平滑氧化膜; 从第二基板的表面注入氢离子或稀有气体离子或其混合气体离子以在基板内部形成离子注入层，至少通过氧化物膜层压第一基板和第二基板，然后将在离子注入层中形成第二衬底以形成层压衬底，对层压衬底进行热处理并向外扩散氧化膜。

3. 发明申请

US20120118354A1 METHOD FOR MANUFACTURING SINGLE CRYSTAL SILICON SOLAR CELL AND SINGLE CRYSTAL SILICON SOLAR CELL 审中-公开
标题翻译：制造单晶硅太阳能电池和单晶硅太阳能电池的方法
公开(公告)号：US20120118354A1
公开(公告)日：2012-05-17
申请号：US13336674
申请日：2011-12-23
申请人： Atsuo ITO , Shoji AKIYAMA , Makoto KAWAI , Kouichi TANAKA , Yuuji TOBISAKA , Yoshihiro KUBOTA
发明人： Atsuo ITO , Shoji AKIYAMA , Makoto KAWAI , Kouichi TANAKA , Yuuji TOBISAKA , Yoshihiro KUBOTA
IPC分类号： H01L31/05
CPC分类号： H01L31/056 , H01L21/76254 , H01L31/03921 , H01L31/0682 , H01L31/1804 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A single crystal silicon solar cell including a stack having at least a light-reflecting film, a single crystal silicon layer, a transparent adhesive layer, and a transparent insulator substrate; a plurality of areas of a first conductivity type and a plurality of areas of a second conductivity type formed in a surface of the silicon layer near the light-reflecting film; a plurality of pn junctions formed in a plane direction of the silicon layer; a plurality of first individual electrodes, each being formed on each one of the plurality of areas of the first conductivity type, and a plurality of second individual electrodes, each being formed on each one of the plurality of areas of the second conductivity type; and a first collector electrode for connecting the plurality of first individual electrodes and a second collector electrode for connecting the plurality of second individual electrodes.
摘要翻译：包括至少具有光反射膜，单晶硅层，透明粘合剂层和透明绝缘体基板的叠层的单晶硅太阳能电池; 形成在靠近光反射膜的硅层的表面中的第一导电类型的多个区域和第二导电类型的多个区域; 在所述硅层的平面方向上形成的多个pn结; 多个第一单独电极，各自形成在第一导电类型的多个区域中的每一个上，并且多个第二单独电极分别形成在第二导电类型的多个区域中的每一个区域上; 以及用于连接多个第一单独电极的第一集电极电极和用于连接多个第二单独电极的第二集电极。

4. 发明申请

US20090291372A1 PELLICLE AND METHOD FOR PRODUCING PELLICLE 有权
标题翻译：用于生产油脂的油脂和方法
公开(公告)号：US20090291372A1
公开(公告)日：2009-11-26
申请号：US12466042
申请日：2009-05-14
申请人： Yoshihiro KUBOTA , Shoji Akiyama , Toshihiko Shindo
发明人： Yoshihiro KUBOTA , Shoji Akiyama , Toshihiko Shindo
IPC分类号： G03F1/00
CPC分类号： G03F1/64 , G03F1/62
摘要： A pellicle film of a silicon single crystal film and a base substrate supporting the pellicle film are formed of a single substrate using an SOI substrate. The base substrate is provided with an opening whose ratio in area to an exposure region when a pellicle is used on a photomask (an open area ratio) is 60% or more, and provided with a reinforcing frame in a non-exposure region of the base substrate. Since the pellicle film and the base substrate supporting the pellicle film are formed of the single substrate (an integrated structure), and the base substrate is provided with the reinforcing frame, the effect of increased strength is obtained. Moreover, a principal plane of a silicon single crystal film is a crystal plane inclined at 3 to 5° from any lattice plane belonging to {100} planes or {111} planes.
摘要翻译：使用SOI基板由单个基板形成硅单晶膜的防护薄膜和支撑防护薄膜的基板。基底基板设置有当在光掩模上使用防护薄膜（开放面积比）时的面积与曝光区域的比例为60％以上的开口，并且在该曝光区域的非曝光区域中设置有加强框架基底。由于防护薄膜和支撑防护薄膜的基板由单个基板（一体化结构）形成，并且基底基板设置有加强框架，因此获得了提高强度的效果。此外，硅单晶膜的主面是从属于{100}面或{111}面的任何晶格面倾斜3〜5°的晶面。

5. 发明申请

US20080121275A1 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US20080121275A1
公开(公告)日：2008-05-29
申请号：US11976020
申请日：2007-10-19
申请人： Atsuo ITO , Shoji AKIYAMA , Makoto KAWAI , Koichi TANAKA , Yuuji TOBISAKA , Yoshihiro KUBOTA
发明人： Atsuo ITO , Shoji AKIYAMA , Makoto KAWAI , Koichi TANAKA , Yuuji TOBISAKA , Yoshihiro KUBOTA
IPC分类号： H01L31/00 , B05D5/12 , H05H1/24
CPC分类号： H01L31/186 , H01L31/0682 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： There is disclosed a method for producing a single crystal silicon solar cell comprising the steps of: implanting hydrogen ions or rare gas ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; conducting a surface activating treatment for at least one of: the ion implanting surface of the single crystal silicon substrate; and a surface of the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the transparent insulator substrate to each other, in a manner that the surface(s) subjected to the surface activating treatment is/are used as a bonding surface(s); applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; and forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, in a manner that a plurality of first conductivity-type regions and a plurality of second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer. There can be provided a single crystal silicon solar cell as a see-through type solar cell, including a thin-film light conversion layer made of single crystal silicon having a higher crystallinity.
摘要翻译：公开了一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过其离子注入表面将氢离子或稀有气体离子注入到单晶硅衬底中，以在单晶硅衬底中形成离子注入层; 对所述单晶硅衬底的离子注入表面中的至少一个进行表面活化处理; 和透明绝缘体基板的表面; 将单晶硅衬底和透明绝缘体衬底的离子注入表面彼此接合，使得经过表面活化处理的表面被用作接合表面; 对离子注入层施加冲击以在其上机械分层单晶硅衬底以留下单晶硅层; 在所述单晶硅层的分层表面侧形成具有第二导电类型的多个扩散区域，其中所述第一导电类型区域和多个第二导电类型区域存在于所述分层的单晶硅层的表面。可以提供作为透明型太阳能电池的单晶硅太阳能电池，其包括由具有较高结晶度的单晶硅制成的薄膜光转换层。

6. 发明申请

US20140120794A1 THERMAL INSULATION LAMINATE 有权
标题翻译：热绝缘层压板
公开(公告)号：US20140120794A1
公开(公告)日：2014-05-01
申请号：US14146988
申请日：2014-01-03
申请人： Hiroshi MOGI , Yoshihiro KUBOTA
发明人： Hiroshi MOGI , Yoshihiro KUBOTA
IPC分类号： B32B7/02 , B32B5/16 , B32B5/02 , F16L59/02 , B32B17/06
CPC分类号： F16L59/029 , B32B5/02 , B32B5/16 , B32B7/02 , B32B7/12 , B32B17/064 , B32B27/12 , B32B27/30 , B32B2255/10 , B32B2255/20 , B32B2262/101 , B32B2264/102 , B32B2264/105 , B32B2307/304 , B32B2307/412 , B32B2307/584 , B32B2307/704 , B32B2307/71 , B32B2605/006 , B60J1/20 , Y10T442/623 , Y10T442/676 , Y10T442/699
摘要： Provided is a thermal insulation laminate having both of an excellent thermal insulation property and high visible light transmittance, and further having a provided antifouling property and an excellent scratch resistance. A thermal insulation laminate includes a photocatalytic layer (4); a transparent thermal insulation layer (10) having two transparent base plates (1, 1) and composite materials including a fiber assembly (2) and inorganic particles (3) therebetween; and an adhesive layer (5); the photocatalytic layer (4) is an outermost layer of one side thereof, and the adhesive layer (5) is an outermost layer of other side. A hard coat layer may be sandwiched in either at least one of between the photocatalytic layer (4) and the transparent thermal insulation layer (10), and between the transparent thermal insulation layer (10) and the adhesive layer (5).
摘要翻译：本发明提供一种具有良好的绝热性和高可见光透射率的绝热层压体，并且还具有提供的防污性和优异的耐擦伤性。绝热层压体包括光催化层（4）; 具有两个透明基板（1,1）的透明隔热层（10）和包括纤维集合体（2）和无机颗粒（3）的复合材料; 和粘合层（5）; 光催化层（4）是其一面的最外层，粘合剂层（5）是另一侧的最外层。硬涂层可以夹在光催化层（4）和透明绝热层（10）中的至少一个之间，以及透明绝热层（10）和粘合剂层（5）之间。

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