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51. 发明申请

US20100310302A1 Computer-contained binder 有权
标题翻译：电脑包装的粘合剂
公开(公告)号：US20100310302A1
公开(公告)日：2010-12-09
申请号：US12588338
申请日：2009-10-13
申请人： Chee-Chun Leung , Yuan-Chen Liang , Chia-Hui Wu , Yi-Chun Lin
发明人： Chee-Chun Leung , Yuan-Chen Liang , Chia-Hui Wu , Yi-Chun Lin
IPC分类号： B42F13/40
CPC分类号： B42F13/16 , B42F13/40 , G06F1/1635 , G06F1/1656 , G06F2200/1634 , H01M2/1055
摘要： A computer-contained binder provided in the disclosure has a document binder and a computer device. The document binder having at least one cover plate and plural parallel folder rings piercing through an edge of the cover plate. The computer device has a main body, a column-shaped battery portion pierced through by all of the parallel folder rings, and a movable arm. The movable arm has two opposite ends, in which one end thereof is fixed on one of the opposite ends of the column-shaped battery portion, and the other end thereof is movably disposed on one side of the main body.
摘要翻译：本公开中提供的包含计算机的装订夹具具有文件夹和计算机装置。文件夹具具有穿过盖板的边缘的至少一个盖板和多个平行折叠环。计算机装置具有主体，由所有平行折叠环刺穿的柱状电池部分和可动臂。可动臂具有两个相对的端部，其一端固定在柱状电池部分的相对端之一上，另一端可移动地设置在主体的一侧。

52. 发明授权

US07843002B2 Fully isolated high-voltage MOS device 有权
标题翻译：全隔离高压MOS器件
公开(公告)号：US07843002B2
公开(公告)日：2010-11-30
申请号：US11773365
申请日：2007-07-03
申请人： Chi-San Wei , Kuo-Ming Wu , Yi-Chun Lin
发明人： Chi-San Wei , Kuo-Ming Wu , Yi-Chun Lin
IPC分类号： H01L21/00
CPC分类号： H01L29/1083 , H01L27/088 , H01L29/0653 , H01L29/0692 , H01L29/66659 , H01L29/7835
摘要： A semiconductor structure includes a semiconductor substrate; an n-type tub extending from a top surface of the semiconductor substrate into the semiconductor substrate, wherein the n-type tub comprises a bottom buried in the semiconductor substrate; a p-type buried layer (PBL) on a bottom of the tub, wherein the p-type buried layer is buried in the semiconductor substrate; and a high-voltage n-type metal-oxide-semiconductor (HVNMOS) device over the PBL and within a region encircled by sides of the n-type tub.
摘要翻译：半导体结构包括半导体衬底; 从半导体衬底的顶表面延伸到半导体衬底中的n型桶，其中n型桶包括埋在半导体衬底中的底部; 在桶的底部设置p型掩埋层（PBL），其中p型掩埋层埋在半导体衬底中; 和高压n型金属氧化物半导体（HVNMOS）器件，并且在由n型槽的侧面包围的区域内。

53. 发明授权

US07667134B2 Composite-metal-composite sandwich housing structure 失效
标题翻译：复合金属复合夹心结构
公开(公告)号：US07667134B2
公开(公告)日：2010-02-23
申请号：US11349102
申请日：2006-02-08
申请人： Ching-Cheng Wang , Yi-Chun Lin , Chao-Hung Lin
发明人： Ching-Cheng Wang , Yi-Chun Lin , Chao-Hung Lin
IPC分类号： H02G3/08 , H05K5/00
CPC分类号： H04M1/0202 , H05K5/02
摘要： A composite-metal-composite sandwich structure is employed as a housing of a mobile electronic device. A metal sheet is preformed as a desired shape with nuts deposed thereon. A composite sheet is attached to each side of the metal sheet, exposing the nuts such that other components of the mobile electronic device can be screwed on the sandwich structure.
摘要翻译：复合金属 - 复合夹层结构被用作移动电子设备的壳体。将金属片预成型为所需的形状，其上放置螺母。复合片材附着在金属片的每一侧上，露出螺母，使得移动电子装置的其它部件能够被拧在夹层结构上。

54. 发明申请

US20090257335A1 AUDIO SIGNAL PROCESSING METHOD 有权
标题翻译：音频信号处理方法
公开(公告)号：US20090257335A1
公开(公告)日：2009-10-15
申请号：US12419563
申请日：2009-04-07
申请人： Yi-Chun LIN , Wen-Haw WANG , Kai-Hsiang CHOU
发明人： Yi-Chun LIN , Wen-Haw WANG , Kai-Hsiang CHOU
IPC分类号： G11B27/00
CPC分类号： G11B27/034 , G10L21/04 , G11B27/105
摘要： An audio signal processing method includes the steps of: dividing an audio signal data stream into a plurality of selection segments; determining a target segment in the audio signal data stream, the target segment including a splice point for splicing a splice segment thereto; selecting one of the selection segments as the splice segment according to at least one parameter of the target segment; and processing the target segment and the splice segment to splice the splice segment to the target segment, and outputting a processed segment.
摘要翻译：音频信号处理方法包括以下步骤：将音频信号数据流划分成多个选择段; 确定所述音频信号数据流中的目标片段，所述目标片段包括用于将拼接片段拼接的拼接点; 根据所述目标段的至少一个参数选择所述选择段中的一个作为所述拼接段; 以及处理所述目标段和所述拼接段以将所述拼接段拼接到所述目标区段，并输出处理的区段。

55. 发明授权

US07563040B2 Built-in webcam 有权
标题翻译：内置摄像头
公开(公告)号：US07563040B2
公开(公告)日：2009-07-21
申请号：US11464031
申请日：2006-08-11
申请人： Wen-Ji Tsai , Yi-Chun Lin , Wan-Chi Lin , Jung-Wen Chang
发明人： Wen-Ji Tsai , Yi-Chun Lin , Wan-Chi Lin , Jung-Wen Chang
IPC分类号： G03B17/00 , G03B17/48 , H04N5/225
CPC分类号： G03B17/02 , G06F1/1616 , G06F1/1686 , H04N5/2251 , H04N7/142
摘要： A webcam built in an electronic device includes a housing, a video camera, and a latching mechanism. The video camera is movable between a first location in the housing and a second location outside the housing. The latching mechanism maintains the video camera at the first location and the second location.
摘要翻译：内置在电子设备中的网络摄像机包括外壳，摄像机和锁定机构。摄像机可以在壳体中的第一位置和壳体外部的第二位置之间移动。锁定机构将摄像机保持在第一位置和第二位置。

56. 发明申请

US20090008711A1 Fully Isolated High-Voltage MOS Device 有权
标题翻译：全隔离高压MOS器件
公开(公告)号：US20090008711A1
公开(公告)日：2009-01-08
申请号：US11773365
申请日：2007-07-03
申请人： Chi-San Wei , Kuo-Ming Wu , Yi-Chun Lin
发明人： Chi-San Wei , Kuo-Ming Wu , Yi-Chun Lin
IPC分类号： H01L29/78
CPC分类号： H01L29/1083 , H01L27/088 , H01L29/0653 , H01L29/0692 , H01L29/66659 , H01L29/7835
摘要： A semiconductor structure includes a semiconductor substrate; an n-type tub extending from a top surface of the semiconductor substrate into the semiconductor substrate, wherein the n-type tub comprises a bottom buried in the semiconductor substrate; a p-type buried layer (PBL) on a bottom of the tub, wherein the p-type buried layer is buried in the semiconductor substrate; and a high-voltage n-type metal-oxide-semiconductor (HVNMOS) device over the PBL and within a region encircled by sides of the n-type tub.
摘要翻译：半导体结构包括半导体衬底; 从半导体衬底的顶表面延伸到半导体衬底中的n型桶，其中n型桶包括埋在半导体衬底中的底部; 在桶的底部设置p型掩埋层（PBL），其中p型掩埋层埋在半导体衬底中; 和高压n型金属氧化物半导体（HVNMOS）器件，并且在由n型槽的侧面包围的区域内。

57. 发明申请

US20080237703A1 HIGH VOLTAGE SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME 有权
标题翻译：高电压半导体器件及其制造方法
公开(公告)号：US20080237703A1
公开(公告)日：2008-10-02
申请号：US11692213
申请日：2007-03-28
申请人： Yi-Chun Lin , Chi-Chih Chen , Kuo-Ming Wu , Ruey-Hsin Liu
发明人： Yi-Chun Lin , Chi-Chih Chen , Kuo-Ming Wu , Ruey-Hsin Liu
IPC分类号： H01L29/78
CPC分类号： H01L29/7816 , H01L21/26586 , H01L29/0847 , H01L29/086 , H01L29/0878 , H01L29/0886 , H01L29/66659 , H01L29/66689 , H01L29/7835
摘要： An exemplary embodiment of a semiconductor device capable of high-voltage operation includes a substrate with a well region therein. A gate stack with a first side and a second side opposite thereto, overlies the well region. Within the well region, a doped body region includes a channel region extending under a portion of the gate stack and a drift region is adjacent to the channel region. A drain region is within the drift region and spaced apart by a distance from the first side thereof and a source region is within the doped body region near the second side thereof. There is no P-N junction between the doped body region and the well region.
摘要翻译：能够进行高压操作的半导体器件的示例性实施例包括其中具有阱区的衬底。具有与其相对的第一侧和第二侧的栅极堆叠覆盖在阱区域上。在阱区内，掺杂体区域包括在栅叠层的一部分下延伸的沟道区，漂移区与沟道区相邻。漏极区域在漂移区域内并与其第一侧隔开距离，并且源极区域在其第二侧附近的掺杂体区域内。在掺杂体区和阱区之间不存在P-N结。

58. 发明申请

US20070181941A1 High voltage semiconductor devices and methods for fabricating the same 有权
标题翻译：高压半导体器件及其制造方法
公开(公告)号：US20070181941A1
公开(公告)日：2007-08-09
申请号：US11351154
申请日：2006-02-09
申请人： Yi-Chun Lin , Kuo-Ming Wu , Ruey-Hsin Liu
发明人： Yi-Chun Lin , Kuo-Ming Wu , Ruey-Hsin Liu
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L29/7816 , H01L29/42368 , H01L29/66681
摘要： High voltage semiconductor devices and methods for fabricating the same are provided. An exemplary embodiment of a semiconductor device capable of high-voltage operation, comprising a substrate comprising a first well formed therein. A gate stack is formed overlying the substrate, comprising a gate dielectric layer and a gate electrode formed thereon. A channel well and a second well are formed in portions of the first well. A source region is formed in a portion of the channel well. A drain region is formed in a portion of the second well, wherein the gate dielectric layer comprises a relatively thinner portion at one end of the gate stack adjacent to the source region and a relatively thicker portion at one end of the gate stack adjacent to and directly contacts the drain region.
摘要翻译：提供了高压半导体器件及其制造方法。能够进行高压操作的半导体器件的示例性实施例，包括其中形成有第一阱的衬底。形成覆盖在衬底上的栅叠层，包括形成在其上的栅介质层和栅电极。在第一井的部分中形成通道井和第二井。源区域形成在通道井的一部分中。漏极区域形成在第二阱的一部分中，其中栅极电介质层包括邻近源极区域的栅极堆叠的一端处的相对较薄的部分，以及邻近栅极堆叠的一端的相对较厚的部分，直接接触漏区。

59. 发明申请

US20210286412A1 PORTABLE ELECTRONIC DEVICE AND DISINFECTING AND STERILIZING METHOD THEREOF 有权
公开(公告)号：US20210286412A1
公开(公告)日：2021-09-16
申请号：US17192891
申请日：2021-03-05
申请人： Yi-Chun Lin , Ya-Hui Tseng , I-Kai Liu , Po-Ching Chiang , Chien-Lun Sun , Yen-Kang Chen , Jih-Houng Lee , Chih-Chien Liu
发明人： Yi-Chun Lin , Ya-Hui Tseng , I-Kai Liu , Po-Ching Chiang , Chien-Lun Sun , Yen-Kang Chen , Jih-Houng Lee , Chih-Chien Liu
IPC分类号： G06F1/16 , A61L2/00
摘要： A portable electronic device including a first body, a second body, a hinge mechanism, a control unit, a sensor unit, a sterilization module, and a shielding module, is provided. The first body has a first inner surface. The second body has a second inner surface. The hinge mechanism is connected between the first body and the second body. The control unit is disposed in the first body or the second body. The sensor unit is disposed in the first body or the second body and coupled to the control unit. The sterilization module is disposed at the hinge mechanism and coupled to the control unit, the sterilization module is configured to generate light for sterilization and disinfection. The shielding module is disposed on the hinge mechanism and the shielding module can move relative to the hinge mechanism.

60. 发明授权

US10678307B2 Electronic device 有权
公开(公告)号：US10678307B2
公开(公告)日：2020-06-09
申请号：US16264682
申请日：2019-02-01
申请人： Wei-Ting Chen , Tzu-Chien Lai , Yen-Hsiao Yeh , Nien-Chen Lee , Yi-Chun Lin
发明人： Wei-Ting Chen , Tzu-Chien Lai , Yen-Hsiao Yeh , Nien-Chen Lee , Yi-Chun Lin
IPC分类号： G06F1/16
摘要： An electronic device includes a first body, a second body, a base, a first shaft structure, a second shaft structure, and a locking component. The second body is connected to the first body through the base. The first shaft structure includes a first shaft and a second shaft. The second body is pivoted to a first base portion of the base through the first shaft and a second base portion of the base through the second shaft. The second shaft structure includes a connecting component fixed to the first body and a third shaft pivoted to the first base portion and the connecting component. The first and second shafts are perpendicular to the third shaft. The locking component is slidably disposed between the second base portion and the first body and configured to lock or release a connection between the second base portion and the first body.

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