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51. 发明授权

US08614113B2 Image sensor and method of fabricating the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US08614113B2
公开(公告)日：2013-12-24
申请号：US13239457
申请日：2011-09-22
申请人： Yu-Jin Ahn , Duck-Hyung Lee , Jong-Cheol Shin , Chang-Rok Moon , Sang-Jun Choi , Eun-Kyung Park
发明人： Yu-Jin Ahn , Duck-Hyung Lee , Jong-Cheol Shin , Chang-Rok Moon , Sang-Jun Choi , Eun-Kyung Park
IPC分类号： H01L21/00 , H01L27/146
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/1463
摘要： An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.
摘要翻译：提供了一种用于制造图像传感器的图像传感器和方法。制造图像传感器的方法包括在具有多个像素区域的半导体外延层上形成第一绝缘层; 在像素区域之间的边界区域中构图半导体外延层和第一绝缘层的一部分以形成沟槽; 在所述第一绝缘层上形成掩埋绝缘层，填充所述沟槽，所述掩埋绝缘层具有平坦的顶表面; 在所述掩埋绝缘层上形成第二绝缘层; 在所述第二绝缘层上形成第一掩模图案，所述第一掩模图案限定与所述沟槽重叠的开口; 以及使用所述第一掩模图案作为离子注入掩模进行离子注入处理，以在所述沟槽的底部形成第一类型的势垒区域。

52. 发明授权

US08576318B2 Image sensors and methods of fabricating the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US08576318B2
公开(公告)日：2013-11-05
申请号：US12899273
申请日：2010-10-06
申请人： Yun-Ki Lee , Duck-Hyung Lee
发明人： Yun-Ki Lee , Duck-Hyung Lee
IPC分类号： H04N5/217 , H04N3/14 , H04N5/335 , H01L27/00 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/1462 , H01L27/14632 , H01L27/1464 , H01L27/14687
摘要： An image sensor and a method of fabricating the same are provided. The image sensor includes a substrate having a pixel region including a plurality of unit pixels and a non-pixel region, at least one first well in the non-pixel region, an interconnect structure on a first side of the substrate, and a base well in the non-pixel region and between the first well and a second side of the substrate.
摘要翻译：提供了图像传感器及其制造方法。图像传感器包括具有包括多个单位像素和非像素区域的像素区域的基板，非像素区域中的至少一个第一阱，基板的第一侧上的互连结构，以及基底阱在非像素区域以及衬底的第一阱和第二侧之间。

53. 发明授权

US07667183B2 Image sensor with high fill factor pixels and method for forming an image sensor 有权
标题翻译：具有高填充因子像素的图像传感器和用于形成图像传感器的方法
公开(公告)号：US07667183B2
公开(公告)日：2010-02-23
申请号：US11593663
申请日：2006-11-07
申请人： Seok-ha Lee , Duck-hyung Lee , Jong-cheol Shin , Kang-bok Lee
发明人： Seok-ha Lee , Duck-hyung Lee , Jong-cheol Shin , Kang-bok Lee
IPC分类号： H01L31/00
CPC分类号： H01L27/14603 , H01L27/14627 , H01L27/14641
摘要： An image sensor comprising an array of photoelectric conversion elements in a substrate, the photoelectric conversion elements being arranged in rows and columns extending in a first direction and a second direction respectively, a plurality of first junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common row, and a plurality of second junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common column, and a plurality of dielectric isolation regions in the substrate, that each isolate corner portions of neighboring photoelectric conversion elements. In one embodiment, the photoelectric conversion elements have a first pitch in the first direction and have a second pitch in the second direction and the first pitch is substantially equal for the photoelectric conversion elements of a common row, and the second pitch is substantially equal for the photoelectric conversion elements of a common column.
摘要翻译：一种图像传感器，包括在基板中的光电转换元件的阵列，所述光电转换元件分别以沿第一方向和第二方向延伸的行和列布置，所述基板中的多个第一结隔离区域各自隔离侧部分公共行的相邻光电转换元件和基板中的多个第二结隔离区域，每个隔离区域隔离共用列的相邻光电转换元件的侧部和基板中的多个介电隔离区域，相邻光电转换元件的角部。在一个实施例中，光电转换元件在第一方向上具有第一节距并且在第二方向上具有第二节距，并且第一节距对于公共行的光电转换元件基本相等，并且第二节距基本相等共用列的光电转换元件。

54. 发明申请

US20080035836A1 Image sensor and method for fabricating the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US20080035836A1
公开(公告)日：2008-02-14
申请号：US11889252
申请日：2007-08-10
申请人： Yun-Ki Lee , Duck-Hyung Lee
发明人： Yun-Ki Lee , Duck-Hyung Lee
IPC分类号： H01L31/0232
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14685
摘要： An image sensor includes at least one photoelectric conversion area on a semiconductor substrate, a color filter over the photoelectric conversion area, and an apochromatic microlens over the color filter.
摘要翻译：图像传感器包括半导体衬底上的至少一个光电转换区域，光电转换区域上的滤色器以及滤色器上的复消色差微透镜。

55. 发明申请

US20070090274A1 Image sensors including active pixel sensor arrays 有权
标题翻译：图像传感器包括有源像素传感器阵列
公开(公告)号：US20070090274A1
公开(公告)日：2007-04-26
申请号：US11482172
申请日：2006-07-07
申请人： Duck-hyung Lee , Kang-bok Lee , Seok-ha Lee
发明人： Duck-hyung Lee , Kang-bok Lee , Seok-ha Lee
IPC分类号： H01L27/00
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14641
摘要： In one aspect, an image sensor is provided which includes an array of unit active pixels. Each of the unit active pixels comprises a first active area including a plurality of photoelectric conversion regions, and a second active area separated from the first active area. The first active areas are arranged in rows and columns so as to define row and column extending spacings there between, and the second active areas are located at respective intersections of the row and column extending spacings defined between the first active areas.
摘要翻译：在一个方面，提供一种包括单位有源像素阵列的图像传感器。每个单位有源像素包括包括多个光电转换区域的第一有源区域和与第一有源区域分离的第二有源区域。第一有源区域以行和列布置，以便在其间限定行和列延伸的间隔，并且第二有源区域位于在第一有源区域之间限定的行和列延伸间隔的相应交点处。

56. 发明申请

US20070034965A1 CMOS Image Sensor Having Drive Transistor with Increased Gate Surface Area and Method of Manufacturing the Same 有权
标题翻译：具有驱动晶体管的CMOS图像传感器具有增加的栅极表面积及其制造方法
公开(公告)号：US20070034965A1
公开(公告)日：2007-02-15
申请号：US11463317
申请日：2006-08-09
申请人： Jong-wan Jung , Duck-hyung Lee
发明人： Jong-wan Jung , Duck-hyung Lee
IPC分类号： H01L29/94 , H01L29/76 , H01L31/00
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/14643 , Y10S438/964
摘要： A CMOS image sensor cell includes a semiconductor active region of first conductivity type having a surface thereon and a P-N junction photodiode in the active region. A drive transistor is also provided in the semiconductor active region. The drive transistor has a gate electrode that is configured to receive charge generated in the P-N junction photodiode during an image capture operation (i.e., during capture of photons received from an image). This drive transistor has a gate electrode and a contoured channel region extending underneath the gate electrode. The contoured channel region has an effective channel length greater than a length of the gate electrode.
摘要翻译： CMOS图像传感器单元包括在其上具有表面的第一导电类型的半导体有源区和有源区中的P-N结型光电二极管。驱动晶体管也设置在半导体有源区中。驱动晶体管具有被配置为在图像捕获操作期间（即在从图像接收的光子捕获期间）接收在P-N结光电二极管中产生的电荷的栅电极。该驱动晶体管具有栅电极和延伸在栅电极下方的波导沟道区。轮廓通道区域具有大于栅电极的长度的有效通道长度。

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