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41. 发明授权

US09346148B2 Superabrasive material with protective adhesive coating and method for producing said coating 有权
标题翻译：具有保护性粘合剂涂层的超级磨料和用于生产所述涂层的方法
公开(公告)号：US09346148B2
公开(公告)日：2016-05-24
申请号：US13864984
申请日：2013-04-17
申请人： Hardide plc
发明人： Yuri Zhuk , Yuri Lakhotkin
IPC分类号： B24D3/06 , B24D18/00 , C23C16/30 , C04B41/00 , C04B41/52 , C23C28/00 , C04B41/90 , C23C16/02 , C23C16/14 , C09K3/14 , C04B41/51 , C23C12/02 , C23C28/02 , C23C24/08 , B24B1/00
CPC分类号： B24D3/06 , B24D18/0072 , C04B41/009 , C04B41/5133 , C04B41/52 , C04B41/90 , C09K3/1445 , C23C12/02 , C23C16/0272 , C23C16/14 , C23C16/30 , C23C24/085 , C23C28/027 , C23C28/324 , C23C28/341 , C23C28/347 , C23C28/36 , C23C28/42 , C04B35/52 , C04B41/4545 , C04B41/4556 , C04B41/5057 , C04B41/4531 , C04B41/522
摘要： A coating on mono- or poly-crystalline diamond or diamond-containing material includes a first adhesive layer formed directly on the diamond or diamond-containing material, the first layer including tungsten and tungsten carbide alloyed with fluorine in an amount of 0.001 to 0.12 wt % calculated on the total weight of the first layer. The coating further includes a second protective layer formed on the first layer, the second layer including at least tungsten alloyed with fluorine in an amount of 0.001 to 0.12 wt % calculated on the total weight of the second layer. The adhesive layer provides excellent bond strength to diamond, while the protective layer provides good protection against oxidation and molten metals used for attaching the coated diamonds to tools.
摘要翻译：在单晶或多晶金刚石或含金刚石材料上的涂层包括直接形成在金刚石或含金刚石材料上的第一粘合剂层，第一层包括与氟合金的钨和碳化钨，其量为0.001至0.12重量％％计算第一层的总重量。所述涂层还包括形成在所述第一层上的第二保护层，所述第二层至少包含以与所述第二层的总重量计算的0.001至0.12重量％的与钨合金的钨。粘合剂层为金刚石提供优异的粘合强度，而保护层提供良好的防氧化保护和用于将涂层钻石附着到工具上的熔融金属。

42. 发明授权

US09322113B2 Tantalum carbide-coated carbon material and manufacturing method for same 有权
标题翻译：碳化钨涂层碳材料及其制造方法
公开(公告)号：US09322113B2
公开(公告)日：2016-04-26
申请号：US13519695
申请日：2010-12-28
申请人： Mika Kondo
发明人： Mika Kondo
IPC分类号： B32B9/00 , C30B29/36 , C04B41/00 , C04B41/50 , C04B41/87 , C23C16/14 , C23C16/32 , C23C16/56 , C30B25/02 , C04B111/00
CPC分类号： C30B29/36 , C04B41/009 , C04B41/5057 , C04B41/87 , C04B2111/0025 , C04B2111/00405 , C23C8/20 , C23C16/14 , C23C16/32 , C23C16/56 , C30B25/02 , Y10T428/30 , C04B35/522 , C04B41/4531
摘要： On the surface of a carbon substrate 41, a tantalum carbide coating film 42 is formed to coat the carbon substrate 41. The tantalum carbide coating film 42 has a maximum peak value of at least 80 degrees in an orientation angle of a (311) plane corresponding to a diffraction peak of tantalum carbide as determined by X-ray diffraction.
摘要翻译：在碳基板41的表面上，形成碳化钽涂层42以涂覆碳基板41.碳化钽涂层42在（311）面的取向角中具有至少80度的最大峰值对应于通过X射线衍射确定的碳化钽的衍射峰。

43. 发明授权

US09169556B2 Tungsten growth modulation by controlling surface composition 有权
标题翻译：通过控制表面组成的钨生长调节
公开(公告)号：US09169556B2
公开(公告)日：2015-10-27
申请号：US13968057
申请日：2013-08-15
申请人： Applied Materials, Inc.
发明人： Kai Wu , Kiejin Park , Sang Ho Yu , Sang-Hyeob Lee , Kazuya Daito , Joshua Collins , Benjamin C. Wang
IPC分类号： C23C16/08 , C23C16/14 , C23C16/50 , C23C16/452
CPC分类号： C23C16/452 , C23C16/08 , C23C16/50
摘要： A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.
摘要翻译：本文公开了一种用于在催化体积CVD沉积期间选择性地控制催化材料的沉积速率的方法。该方法可以包括将衬底定位在包括表面区域和间隙区域的处理室中，将包含钨的第一成核层保形地沉积在衬底的暴露表面上，用活性氮处理至少一部分第一成核层，其中将活化的氮优选沉积在表面区域上，使包含卤化钨和含氢气体的第一沉积气体优先沉积钨填充层以在衬底的间隙区域中反应，使包含卤化钨的成核气体反应形成第二使包含卤化钨和含氢气体的第二沉积气体反应以沉积钨场层。

44. 发明申请

US20150004315A1 Bis(Trimethylsilyl) Six-Membered Ring Systems And Related Compounds As Reducing Agents For Forming Layers On A Substrate 有权
标题翻译：双（三甲基甲硅烷基）六元环系和相关化合物作为底物上形成层的还原剂
公开(公告)号：US20150004315A1
公开(公告)日：2015-01-01
申请号：US13930471
申请日：2013-06-28
申请人： Wayne State University
发明人： Charles H. Winter , Joseph Peter Klesko
IPC分类号： C22B15/00 , C23C16/14
CPC分类号： C23C16/14 , C23C16/18 , C23C16/45525 , C23C16/45553
摘要： A first compound having an atom in an oxidized state is reacted with a bis(trimethylsilyl) six-membered ring system or related compound to form a second compound having the atom in a reduced state relative to the first compound. The atom in an oxidized state is selected from the group consisting of Groups 2 to 12 of the Periodic Table, As, Sb, Bi, Se, and Te.
摘要翻译：使具有氧化态的原子的第一化合物与双（三甲基甲硅烷基）六元环系或相关化合物反应，形成相对于第一化合物具有还原态的第二化合物。氧化态的原子选自元素周期表第2至12族，As，Sb，Bi，Se和Te组成的组。

45. 发明申请

US20070190250A1 Coating with controlled grain size and morphology for enhanced wear resistance and toughness 失效
标题翻译：具有受控晶粒尺寸和形态的涂层，以提高耐磨性和韧性
公开(公告)号：US20070190250A1
公开(公告)日：2007-08-16
申请号：US11783816
申请日：2007-04-12
申请人： Sakari Ruppi
发明人： Sakari Ruppi
IPC分类号： C23C16/14
CPC分类号： C23C30/005 , C23C16/36 , Y10T428/24355 , Y10T428/252 , Y10T428/256 , Y10T428/264 , Y10T428/265
摘要： Wear resistance of the prior-art Ti(C,N) layers can be considerably enhanced by optimising the grain size and microstructure. This invention describes a method to obtain controlled, fine, equiaxed grain morphology in Ti(C,N) layers produced using moderate temperature CVD (MTCVD). The control of the grain size and shape can be obtained by doping using CO, CO2, ZrCl4 and AlCl3 or combinations of these. Doping has to be controlled carefully in order to avoid nanograined structures and oxidisation. This kind of coatings shows new enhanced wear properties. The fine grain size together with equiaxed grain morphology enhances the toughness of the coating with at least maintained wear resistance, which can be seen especially in sticky steels like stainless steels. The optimum grain size is from 50 to about 300 nm, preferably from about 50 to about 150. The coatings according to this invention are characterised by the lack of any strong preferred growth orientation, the length-to-width ratio (L/W) around 1 and only with a slight to moderate XRD line broadening.
摘要翻译：通过优化晶粒尺寸和微观结构，可以显着提高现有技术Ti（C，N）层的耐磨性。本发明描述了一种在使用中等温度CVD（MTCVD）制备的Ti（C，N）层中获得受控的，精细的等轴晶粒形态的方法。可以通过使用CO，CO 2，ZrCl 4和AlCl 3 3或这些的组合掺杂来获得晶粒尺寸和形状的控制。必须仔细控制兴奋剂，以避免纳米晶粒结构和氧化。这种涂料显示出新的增强的耐磨性能。细晶粒度与等轴晶粒形态一起提高了至少保持耐磨性的涂层韧性，特别是在不锈钢等粘钢中可以看出。最佳粒度为50至约300nm，优选约50至约150.根据本发明的涂层的特征在于缺乏任何强的优选生长方向，长宽比（L / W）约1只，只有轻微至中等的XRD线扩大。

46. 发明申请

US20050217579A1 Method and apparatus for production of metal film or the like 审中-公开
标题翻译：金属膜等的制造方法和装置
公开(公告)号：US20050217579A1
公开(公告)日：2005-10-06
申请号：US11132222
申请日：2005-05-19
申请人： Hitoshi Sakamoto , Naoki Yahata , Toshihiko Nishimori , Yoshiyuki Coba , Hiroshi Tonegawa , Ikumasa Koshiro , Yuzuru Ogura
发明人： Hitoshi Sakamoto , Naoki Yahata , Toshihiko Nishimori , Yoshiyuki Coba , Hiroshi Tonegawa , Ikumasa Koshiro , Yuzuru Ogura
IPC分类号： C23C16/08 , C23C16/14 , C23C16/44 , C23C16/448 , H01J37/32 , H01L21/285 , H01L21/44 , H01L21/768
CPC分类号： H01J37/321 , C23C16/08 , C23C16/14 , C23C16/4488 , H01J37/32357 , H01J2237/3326 , H01L21/28556 , H01L21/76879
摘要： In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.
摘要翻译：在金属膜制造装置中，在室内用C 2 H 2气体等离子体蚀刻铜板构件，以形成包含Cu成分和Cl 2/2气体的前体; 并且将铜板构件和基板的温度和它们的温度之间的差异预先控制，以将前体的Cu组分沉积在基板上，从而形成Cu膜。在该装置中，Cl *形成在与腔室内部连通的通道的激励室中，以流过Cl 2气体，并且将Cl *供应到室中以抽出Cl < 从吸附在基材上的前驱物中吸收气体，从而促进Cu成膜反应。该设备具有高的成膜速度，可以使用廉价的起始材料，并且可以最小化残留在膜中的杂质。

47. 发明授权

US06933011B2 Two-step atomic layer deposition of copper layers 失效
标题翻译：铜层的两步原子层沉积
公开(公告)号：US06933011B2
公开(公告)日：2005-08-23
申请号：US10686898
申请日：2003-10-15
申请人： Yoshihide Senzaki
发明人： Yoshihide Senzaki
IPC分类号： C23C16/00 , C23C16/06 , C23C16/14 , C23C16/18 , C23C16/44 , C23C16/455 , H01L20060101 , H01L21/285 , H01L21/768
CPC分类号： C23C16/45553 , C23C16/18 , C23C16/56 , H01L21/28562 , H01L21/76838
摘要： A method of forming copper films at low temperatures is provided. The method comprises two steps of forming a copper oxide layer from a non-fluorine containing copper precursor on a substrate and reducing the copper oxide layer to form a copper layer on the substrate. The formation of copper oxide is carried out by atomic layer deposition using a non-fluorine containing copper precursor and an oxygen containing gas at a low temperature. Copper alkoxides, copper β-diketonates and copper dialkylamides are preferred copper precursors. The reduction of copper oxide layer formed is carried out using a hydrogen containing gas at a low temperature.
摘要翻译：提供了一种在低温下形成铜膜的方法。该方法包括从基底上的非含氟铜前体形成铜氧化物层并还原氧化铜层以在衬底上形成铜层的两个步骤。氧化铜的形成是通过在低温下使用不含氟的铜前体和含氧气体的原子层沉积进行的。铜醇盐，β-二酮乙酸铜和二烷基酰胺铜是优选的铜前体。形成的氧化铜层的还原使用含氢气体在低温下进行。

48. 发明授权

US06905543B1 Methods of forming tungsten nucleation layer 有权
标题翻译：形成钨成核层的方法
公开(公告)号：US06905543B1
公开(公告)日：2005-06-14
申请号：US10174628
申请日：2002-06-19
申请人： James A. Fair , Nerissa Taylor , Junghwan Sung
发明人： James A. Fair , Nerissa Taylor , Junghwan Sung
IPC分类号： C23C16/02 , C23C16/14 , C23C16/455 , C30B25/14
CPC分类号： C23C16/14 , C23C16/0218 , C23C16/45525
摘要： The nucleation delay in the formation of a tungsten layer on a substrate is reduced or eliminated by alternative processes. In one process the substrate is exposed to atomic hydrogen before the tungsten nucleation layer is formed. In the other process the substrate is exposed to a boron hydride such as diborane (B2H6) before the nucleation layer is formed. The process works effectively to reduce or eliminate the tungsten nucleation delay on a variety of surfaces, including silicon, silicon dioxide, silicon nitride and titanium nitride.
摘要翻译：通过替代方法减少或消除了在基底上形成钨层的成核延迟。在一个过程中，在形成钨成核层之前，将衬底暴露于原子氢。在另一方法中，在形成成核层之前，将基底暴露于硼氢化物如乙硼烷（B 2 H 6 H 6）。该工艺有效地减少或消除了各种表面上的钨成核延迟，包括硅，二氧化硅，氮化硅和氮化钛。

49. 发明授权

US06872429B1 Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber 失效
标题翻译：在化学气相沉积室中使用等离子体预处理沉积氮化钨
公开(公告)号：US06872429B1
公开(公告)日：2005-03-29
申请号：US09067429
申请日：1998-04-27
申请人： Ling Chen , Seshadri Ganguli , Alfred Mak
发明人： Ling Chen , Seshadri Ganguli , Alfred Mak
IPC分类号： C23C16/02 , C23C16/14 , C23C16/34 , C23C16/52 , H01L21/28 , H01L21/285 , H01L21/336 , H01L21/768 , H01L29/49 , H05H1/24
CPC分类号： H01L21/76843 , C23C16/0245 , C23C16/14 , C23C16/34 , H01L21/28061 , H01L21/28556 , H01L29/4941 , H01L29/66583
摘要： A layer of tungsten nitride is deposited on the upper surface of a wafer with improved adhesion. The deposition is performed by first pretreating the wafer with a hydrogen plasma prior to performing tungsten nitride deposition.
摘要翻译：一层氮化钨沉积在晶片的上表面上，具有改善的粘附力。通过在进行氮化钨沉积之前首先用氢等离子体预处理晶片来进行沉积。

50. 发明授权

US06849298B2 Method for forming diffusion barrier film of semiconductor device 有权
标题翻译：形成半导体器件扩散阻挡膜的方法
公开(公告)号：US06849298B2
公开(公告)日：2005-02-01
申请号：US10157137
申请日：2002-05-30
申请人： Sung Gyu Pyo
发明人： Sung Gyu Pyo
IPC分类号： C23C16/14 , C23C16/18 , C23C16/34 , C23C16/44 , C23C16/455 , H01L21/22 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , C23C16/06
CPC分类号： H01L21/76846 , C23C16/34 , C23C16/45529 , H01L21/28562 , H01L21/76856
摘要： A method for forming a diffusion barrier layer of a semiconductor device by using an Atomic Layer Deposition (ALD) is disclosed, which, in a method for forming a diffusion barrier layer on an entire surface of a semiconductor substrate before forming a metal pipe connected with the semiconductor substrate through a contact hole, the contact hole being formed to expose one region of the semiconductor substrate by selectively removing an insulating interlayer on the semiconductor substrate, the method includes the steps of forming Ti/TiN layers without being exposed to the air by alternately providing a precursor set by using an atomic layer deposition (ALD) and many kinds of reacting gases, performing a silane treatment on the TiN layer, and forming a Ti thin layer by the ALD.
摘要翻译：公开了一种通过使用原子层沉积（ALD）形成半导体器件的扩散阻挡层的方法，该方法在形成与半导体衬底连接的金属管之前在半导体衬底的整个表面上形成扩散阻挡层的方法所述半导体衬底通过接触孔形成，所述接触孔通过选择性地去除所述半导体衬底上的绝缘中间层而形成为暴露所述半导体衬底的一个区域，所述方法包括以下步骤：通过在所述半导体衬底上形成Ti / TiN层而不暴露于空气通过使用原子层沉积（ALD）和多种反应气体交替提供前体，在TiN层上进行硅烷处理，并通过ALD形成Ti薄层。

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