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1. 发明授权

US06905543B1 Methods of forming tungsten nucleation layer 有权
标题翻译：形成钨成核层的方法
公开(公告)号：US06905543B1
公开(公告)日：2005-06-14
申请号：US10174628
申请日：2002-06-19
申请人： James A. Fair , Nerissa Taylor , Junghwan Sung
发明人： James A. Fair , Nerissa Taylor , Junghwan Sung
IPC分类号： C23C16/02 , C23C16/14 , C23C16/455 , C30B25/14
CPC分类号： C23C16/14 , C23C16/0218 , C23C16/45525
摘要： The nucleation delay in the formation of a tungsten layer on a substrate is reduced or eliminated by alternative processes. In one process the substrate is exposed to atomic hydrogen before the tungsten nucleation layer is formed. In the other process the substrate is exposed to a boron hydride such as diborane (B2H6) before the nucleation layer is formed. The process works effectively to reduce or eliminate the tungsten nucleation delay on a variety of surfaces, including silicon, silicon dioxide, silicon nitride and titanium nitride.
摘要翻译：通过替代方法减少或消除了在基底上形成钨层的成核延迟。在一个过程中，在形成钨成核层之前，将衬底暴露于原子氢。在另一方法中，在形成成核层之前，将基底暴露于硼氢化物如乙硼烷（B 2 H 6 H 6）。该工艺有效地减少或消除了各种表面上的钨成核延迟，包括硅，二氧化硅，氮化硅和氮化钛。

2. 发明授权

US07144806B1 ALD of tantalum using a hydride reducing agent 有权
标题翻译：使用氢化物还原剂的钽的ALD
公开(公告)号：US07144806B1
公开(公告)日：2006-12-05
申请号：US10279147
申请日：2002-10-23
申请人： James A. Fair , Jungwan Sung , Nerissa Taylor
发明人： James A. Fair , Jungwan Sung , Nerissa Taylor
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/8242
CPC分类号： H01L21/76843 , C23C16/14 , C23C16/38 , C23C16/42 , C23C16/45542 , H01L21/28562
摘要： An ALD method deposits conformal tantalum-containing material layers on small features of a substrate surface. The method includes the following principal operations: depositing a thin conformal and saturated layer of tantalum-containing precursor over some or all of the substrate surface; using an inert gas or hydrogen plasma to purge the halogen byproducts and unused reactants; reducing the precursor to convert it to a conformal layer of tantalum or tantalum-containing material; using another purge of inert gas or hydrogen plasma to remove the halogen byproducts and unused reactants; and repeating the deposition/reduction cycles until a desired tantalum-containing material layer is achieved. An optional step of treating each newly formed surface of tantalum containing material with a nitrogen-containing agent can be added to create varying amounts of tantalum nitride.
摘要翻译： ALD方法在基底表面的小特征上沉积保形的含钽材料层。该方法包括以下主要操作：在一些或全部基板表面上沉积薄的共形和饱和的含钽前体层; 使用惰性气体或氢气等离子体清洗卤素副产物和未使用的反应物; 减少前体以将其转变成钽或含钽材料的保形层; 使用惰性气体或氢等离子体的另一吹扫来除去卤素副产物和未使用的反应物; 并重复沉积/还原循环，直到达到所需的含钽材料层。可以加入用含氮试剂处理含有钽的材料的每个新形成的表面的可选步骤，以产生不同量的氮化钽。

3. 发明授权

US06844258B1 Selective refractory metal and nitride capping 有权
$Selective refractory metal and nitride capping$
标题翻译：选择性难熔金属和氮化物封盖
公开(公告)号：US06844258B1
公开(公告)日：2005-01-18
申请号：US10435010
申请日：2003-05-09
申请人： James A. Fair , Robert H. Havemann , Jungwan Sung , Nerissa Taylor , Sang-Hyeob Lee , Mary Anne Plano
发明人： James A. Fair , Robert H. Havemann , Jungwan Sung , Nerissa Taylor , Sang-Hyeob Lee , Mary Anne Plano
IPC分类号： H01L21/285 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/76856 , H01L21/28556 , H01L21/28562 , H01L21/76849 , H01L21/76867 , H01L21/76883 , H01L21/76889
摘要： A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to form a refractory metal nitride. Methods to reduce and clean the copper lines before refractory metal deposition are also described. Methods to form a thicker refractory metal layer using bulk deposition are also described.
摘要翻译：描述了一种用于制造有效减少铜电迁移和铜扩散的难熔金属和难熔金属氮化物盖的方法。该方法包括沉积难熔金属成核层并至少氮化至难熔金属层的上部以形成难熔金属氮化物。还描述了在难熔金属沉积之前减少和清洁铜线的方法。还描述了使用体积沉积形成较厚难熔金属层的方法。

4. 发明授权

US07897215B1 Sequential UV induced chemical vapor deposition 有权
标题翻译：顺序UV诱导化学气相沉积
公开(公告)号：US07897215B1
公开(公告)日：2011-03-01
申请号：US10465721
申请日：2003-06-18
申请人： James A. Fair , Nerissa Taylor
发明人： James A. Fair , Nerissa Taylor
IPC分类号： B05D3/06
CPC分类号： C23C16/45525 , C23C16/45536 , C23C16/482 , C23C16/486 , C23C16/487
摘要： Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.
摘要翻译：公开了离子诱导的，UV诱导的和电子诱导的顺序化学气相沉积（CVD）工艺，其中分别使用离子通量，紫外线辐射或电子通量来诱导化学反应的过程。将薄膜沉积在衬底上的过程包括将气相中的第一反应气体的流引入到处理室中，其中气体在衬底上形成吸附的饱和层，并将衬底暴露于离子通量，紫外线辐射或用于引起第一反应气体的吸附层的化学反应形成薄膜的电子束。可以使用第二反应气体来形成复合薄膜。可以重复本发明的离子诱导的，UV诱导的和电子诱导的顺序CVD方法以形成所需厚度的薄膜。

5. 发明授权

US07157798B1 Selective refractory metal and nitride capping 有权
$Selective refractory metal and nitride capping$
标题翻译：选择性难熔金属和氮化物封盖
公开(公告)号：US07157798B1
公开(公告)日：2007-01-02
申请号：US10984126
申请日：2004-11-08
申请人： James A. Fair , Robert H. Havemann , Jungwan Sung , Nerissa Taylor , Sang-Hyeob Lee , Mary Anne Plano
发明人： James A. Fair , Robert H. Havemann , Jungwan Sung , Nerissa Taylor , Sang-Hyeob Lee , Mary Anne Plano
IPC分类号： H01L23/48
CPC分类号： H01L21/76856 , H01L21/28556 , H01L21/28562 , H01L21/76849 , H01L21/76867 , H01L21/76883 , H01L21/76889
摘要： A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to form a refractory metal nitride. Methods to reduce and clean the copper lines before refractory metal deposition are also described. Methods to form a thicker refractory metal layer using bulk deposition are also described.
摘要翻译：描述了一种用于制造有效减少铜电迁移和铜扩散的难熔金属和难熔金属氮化物盖的方法。该方法包括沉积难熔金属成核层并至少氮化至难熔金属层的上部以形成难熔金属氮化物。还描述了在难熔金属沉积之前减少和清洁铜线的方法。还描述了使用体积沉积形成较厚难熔金属层的方法。

6. 发明授权

US06720260B1 Sequential electron induced chemical vapor deposition 有权
标题翻译：顺序电子诱导化学气相沉积
公开(公告)号：US06720260B1
公开(公告)日：2004-04-13
申请号：US10600622
申请日：2003-06-20
申请人： James A. Fair , Nerissa Taylor
发明人： James A. Fair , Nerissa Taylor
IPC分类号： C23C16452
CPC分类号： C23C16/45525 , C23C16/45536 , C23C16/482 , C23C16/486 , C23C16/487
摘要： Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.
摘要翻译：公开了离子诱导的，UV诱导的和电子诱导的顺序化学气相沉积（CVD）工艺，其中分别使用离子通量，紫外线辐射或电子通量来诱导化学反应的过程。将薄膜沉积在衬底上的过程包括将气相中的第一反应气体的流引入到处理室中，其中气体在衬底上形成吸附的饱和层，并将衬底暴露于离子通量，紫外线辐射或用于引起第一反应气体的吸附层的化学反应形成薄膜的电子束。可以使用第二反应气体来形成复合薄膜。可以重复本发明的离子诱导的，UV诱导的和电子诱导的顺序CVD方法以形成所需厚度的薄膜。

7. 发明授权

US06627268B1 Sequential ion, UV, and electron induced chemical vapor deposition 有权
标题翻译：顺序离子，紫外线和电子诱导化学气相沉积
公开(公告)号：US06627268B1
公开(公告)日：2003-09-30
申请号：US09849075
申请日：2001-05-03
申请人： James A. Fair , Wilbert van den Hoek , Nerissa Taylor
发明人： James A. Fair , Wilbert van den Hoek , Nerissa Taylor
IPC分类号： C23C16452
CPC分类号： C23C16/45525 , C23C16/45536 , C23C16/482 , C23C16/486 , C23C16/487
摘要： Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.
摘要翻译：公开了离子诱导的，UV诱导的和电子诱导的顺序化学气相沉积（CVD）工艺，其中分别使用离子通量，紫外线辐射或电子通量来诱导化学反应的过程。将薄膜沉积在衬底上的过程包括将气相中的第一反应气体的流引入到处理室中，其中气体在衬底上形成吸附的饱和层，并将衬底暴露于离子通量，紫外线辐射或用于引起第一反应气体的吸附层的化学反应形成薄膜的电子束。可以使用第二反应气体来形成复合薄膜。可以重复本发明的离子诱导的，UV诱导的和电子诱导的顺序CVD方法以形成所需厚度的薄膜。

8. 发明授权

US07691749B2 Deposition of tungsten nitride 有权
标题翻译：沉积氮化钨
公开(公告)号：US07691749B2
公开(公告)日：2010-04-06
申请号：US11305368
申请日：2005-12-16
申请人： Karl B. Levy , Junghwan Sung , Kaihan A. Ashtiani , James A. Fair , Joshua Collins , Juwen Gao
发明人： Karl B. Levy , Junghwan Sung , Kaihan A. Ashtiani , James A. Fair , Joshua Collins , Juwen Gao
IPC分类号： H01L21/44
CPC分类号： C23C16/4554 , C23C16/0272 , C23C16/34 , C23C16/45531 , C23C16/45534 , H01L21/28562 , H01L21/76843
摘要： Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.
摘要翻译：描述了用于沉积氮化钨层的方法。该方法使用精心控制的沉积技术如脉冲成核层（PNL）形成氮化钨层。最初，在衬底表面上形成钨层。然后将钨层暴露于氮化剂以形成氮化钨层。形成相对较厚层的方法涉及与还原剂钨前体和氮化剂接触的重复循环。在一些情况下，该循环还可以包括与诸如膦或胂的掺杂剂前体接触。

9. 发明授权

US07107998B2 Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus 有权
标题翻译：在CVD装置中防止和清洁含钌沉积物的方法
公开(公告)号：US07107998B2
公开(公告)日：2006-09-19
申请号：US10687318
申请日：2003-10-16
申请人： Harold F. R. Greer , James A. Fair , Junghwan Sung , Nerissa Sue Draeger
发明人： Harold F. R. Greer , James A. Fair , Junghwan Sung , Nerissa Sue Draeger
IPC分类号： B08B9/00 , C23F4/00
CPC分类号： C23G5/00 , C23C16/16 , C23C16/4405
摘要： Carbon monoxide gas is provided in a ruthenium-deposition apparatus to clean undesired ruthenium-containing deposits from apparatus surfaces. Carbon monoxide gas is mixed with reactant gases in apparatus tubing and in a ruthenium-deposition reaction chamber to inhibit formation of undesired ruthenium deposits on apparatus surfaces and to remove ruthenium deposits.
摘要翻译：在钌沉积设备中提供一氧化碳气体以从设备表面清洁不需要的含钌沉积物。一氧化碳气体与设备管道和钌沉积反应室中的反应气体混合，以抑制在设备表面上形成不需要的钌沉积物并除去钌沉积物。

10. 发明授权

US07005372B2 Deposition of tungsten nitride 有权
标题翻译：沉积氮化钨
公开(公告)号：US07005372B2
公开(公告)日：2006-02-28
申请号：US10690492
申请日：2003-10-20
申请人： Karl B. Levy , Junghwan Sung , Kaihan A. Ashtiani , James A. Fair , Joshua Collins , Juwen Gao
发明人： Karl B. Levy , Junghwan Sung , Kaihan A. Ashtiani , James A. Fair , Joshua Collins , Juwen Gao
IPC分类号： H01L21/4763
CPC分类号： C23C16/4554 , C23C16/0272 , C23C16/34 , C23C16/45531 , C23C16/45534 , H01L21/28562 , H01L21/76843
摘要： Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.
摘要翻译：描述了用于沉积氮化钨层的方法。该方法使用精心控制的沉积技术如脉冲成核层（PNL）形成氮化钨层。最初，在衬底表面上形成钨层。然后将钨层暴露于氮化剂以形成氮化钨层。形成相对较厚层的方法涉及与还原剂钨前体和氮化剂接触的重复循环。在一些情况下，该循环还可以包括与诸如膦或胂的掺杂剂前体接触。

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