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41. 发明授权

US06675817B1 Apparatus for etching a glass substrate 有权
标题翻译：用于蚀刻玻璃基板的装置
公开(公告)号：US06675817B1
公开(公告)日：2004-01-13
申请号：US09556462
申请日：2000-04-24
申请人： Yong Il Doh
发明人： Yong Il Doh
IPC分类号： B08B304
CPC分类号： B08B3/12 , C03C15/00 , Y10S134/902
摘要： In an apparatus for etching a glass substrate according to the present invention, impurities that are attached to the surface of a glass substrate, which are formed by assembling a color filter substrate and a TFT substrate provided in the etching bath filled with etchant, are removed by using ultrasonic oscillation generated from an ultrasonic oscillator, by which a glass substrate having uniform thickness and surface is obtained.
摘要翻译：在根据本发明的用于蚀刻玻璃基板的设备中，除去通过组装滤色器基板和设置在填充有蚀刻剂的蚀刻槽中的TFT基板而形成的玻璃基板表面附着的杂质，通过使用从超声波振荡器产生的超声波振荡器，通过该超声波振荡器获得具有均匀厚度和表面的玻璃基板。

42. 发明授权

US06666217B2 Gemini surfactants in cleaning compositions 失效
标题翻译：双子座表面活性剂在清洁组合物中
公开(公告)号：US06666217B2
公开(公告)日：2003-12-23
申请号：US10139126
申请日：2002-05-03
申请人： Michael Elsner , Manfred Weuthen , Hans-Christian Raths
发明人： Michael Elsner , Manfred Weuthen , Hans-Christian Raths
IPC分类号： B08B304
CPC分类号： C08G65/2609 , C08G2650/24 , C11D1/721
摘要： A cleaning composition containing a gemini surfactant corresponding to formula I: R—CHOH—CH2—[OCH2CH2]x—O—CH2—CHOH—R (I) wherein R is a linear or branched alkyl and/or alkenyl radical having from about 4 to 22 carbon atoms, and x is a number from about 5 to 90.
摘要翻译：含有对应于式I的双子表面活性剂的清洁组合物：其中R是具有约4至22个碳原子的直链或支链烷基和/或烯基，x是约5至90的数。

43. 发明授权

US06660100B2 Method for removing paint from plastic parts 有权
公开(公告)号：US06660100B2
公开(公告)日：2003-12-09
申请号：US10047124
申请日：2001-10-23
申请人： Peter Wiedemann
发明人： Peter Wiedemann
IPC分类号： B08B304
CPC分类号： B29B17/02 , B29B2017/0021 , B29B2017/0224 , B29B2017/0488 , B29B2017/0492 , B29K2105/0032 , B29L2009/005 , B29L2031/3055 , C08J11/06 , C08J11/18 , Y02W30/523 , Y02W30/622 , Y02W30/625 , Y02W30/701 , Y02W30/706
摘要： In a process for removing the paint from plastic components provided with coats of paint, the plastic components are first crushed to a bulk material size of the crushed plastic pieces. The plastic pieces are subsequently mixed with a paint removing agent reducing the adhesion of the coats of paint to the plastic pieces, and circulated by means of a conveyor screw. The paint removing agent is formed in this connection by an emulsion consisting of at least one benzyl-substituted alkanol and an alkyl-glycol acetate or N-alkyl-pyrrolidone with an aqueous lye, which can not be completely mixed. The mixing ratio for mixing the individual components is selected so that it is in the range of a mixing gap. After the paint removing agent has acted upon the painted plastic pieces, a solid substance is added to the paint remover so that the further steps of the method can be carried out in a dry state. The plastic pieces are subsequently loaded in a hammer mill in which the coats of paint of the plastic pieces swelled by the paint removing agent are knocked off.

44. 发明授权

US06652666B2 Wet dip method for photoresist and polymer stripping without buffer treatment step 有权
公开(公告)号：US06652666B2
公开(公告)日：2003-11-25
申请号：US09847631
申请日：2001-05-02
申请人： Ching-Tien Ma , Chen-Hsi Shih , Dian-Hau Chen , Gau-Ming Lu , Cho-Ching Chen
发明人： Ching-Tien Ma , Chen-Hsi Shih , Dian-Hau Chen , Gau-Ming Lu , Cho-Ching Chen
IPC分类号： B08B304
CPC分类号： G03F7/425 , G03F7/426 , H01L21/02052 , H01L21/31133 , Y10S134/902
摘要： A wet dip method for photoresist and polymer stripping from a wafer surface without the need for a buffer solvent treatment step is disclosed. In the method, the wafer is first exposed to an etchant solution that is maintained at a temperature of at least 80° C. The wafer is then cooled in a room temperature air for a sufficient length of time until the temperature of the wafer reaches substantially room temperature. The wafer is then rinsed in a rinsing step that includes a quick dump rinse and a final rinse with deionized water that is maintained at a temperature not higher than room temperature without first exposing the wafer to a buffer solvent such as that required in a conventional wet dip method.

45. 发明授权

US06647996B2 Method of diffusing pressurized liquid 失效
标题翻译：扩散加压液体的方法
公开(公告)号：US06647996B2
公开(公告)日：2003-11-18
申请号：US10359507
申请日：2003-02-05
申请人： L. Brian Dunn
发明人： L. Brian Dunn
IPC分类号： B08B304
CPC分类号： H01L21/67057 , B08B3/102 , Y10S134/902
摘要： The invention relates to a diffuser for wet processing systems involved in the manufacturing of semiconductor wafers. The diffuser includes a plenum section and a slitted section. Pressurized fluid from the plenum section is forced through the slitted section and across a plurality of wafers mounted in the wet processing system. One advantage is that by “diffusing” pressurized fluid through the slitted section, a generally uniform and/or laminar flow is achieved. Desirably, the diffuser provides a more reliable, and hence more cost-effective, technology for wet processing fabrication of semiconductor wafers.
摘要翻译：本发明涉及涉及制造半导体晶片的湿加工系统的扩散器。扩散器包括增压部分和切片部分。来自集气室部分的加压流体被迫穿过狭缝部分并穿过安装在湿处理系统中的多个晶片。一个优点是通过将加压流体“扩散”穿过切片部分，实现了大体上均匀的和/或层流的流动。理想地，扩散器为半导体晶片的湿加工制造提供了更可靠的，因此更具成本效益的技术。

46. 发明授权

US06623530B2 Dry-cleaning solvent and method for using the same 失效
标题翻译：干洗溶剂及其使用方法
公开(公告)号：US06623530B2
公开(公告)日：2003-09-23
申请号：US09852224
申请日：2001-05-09
申请人： Dennis Stephen Murphy
发明人： Dennis Stephen Murphy
IPC分类号： B08B304
CPC分类号： C11D3/3738 , C11D3/162 , C11D3/373 , C11D3/3742 , D06L1/02
摘要： The invention is directed to a dry-cleaning solvent and method for dry-cleaning. The dry-cleaning solvent and method employ a linear silicon comprising oligomer that unexpectedly results in excellent cleaning properties in the absence of any known environmental or health risks.
摘要翻译：本发明涉及一种干洗溶剂和干洗方法。干洗溶剂和方法使用包含低聚物的线性硅，其在没有任何已知的环境或健康风险的情况下意外地导致优异的清洁性能。

47. 发明授权

US06609528B2 Method for producing saponified ethylene-vinyl acetate copolymer 有权
公开(公告)号：US06609528B2
公开(公告)日：2003-08-26
申请号：US09933677
申请日：2001-08-22
申请人： Noboru Yanagida
发明人： Noboru Yanagida
IPC分类号： B08B304
CPC分类号： C08F6/008 , C08F8/12 , C08F2800/10 , C08L29/04 , C08F218/08 , C08F210/02
摘要： A method for producing a saponified ethylene-vinyl acetate copolymer, which comprises washing chips of a saponified ethylene-vinyl acetate copolymer. In this method, the chips containing impurities and methanol are introduced into a washing column through an upper portion thereof; water is introduced into the washing column through a lower portion thereof; while the methanol concentration in the solution in the upper portion of the column is maintained in the range of 25 to 45 wt % and the chips are allowed to fall (i.e. sink) from the upper portion of the column, methanol and water with at least a part of the impurities are discharged from the column through an upper portion thereof; and the chips are taken out of the column through a lower portion thereof with water that contains methanol in a lower concentration than the methanol concentration in the solution in the upper portion of the column. According to this method, a saponified ethylene-vinyl acetate copolymer is produced efficiently and safely, and visual imperfections are inhibited when the saponified copolymer is formed into a molded product such as a film.

48. 发明授权

US06605158B1 Radioactive decontamination and translocation method 失效
标题翻译：放射性去污和易位法
公开(公告)号：US06605158B1
公开(公告)日：2003-08-12
申请号：US10283039
申请日：2002-10-24
申请人： Robert T. Martin
发明人： Robert T. Martin
IPC分类号： B08B304
CPC分类号： C11D7/08 , C11D7/261 , C11D7/265 , C11D7/3236 , C11D11/0023 , C11D11/0064 , G21F9/28
摘要： A method for removing radioactive contaminants from a given surface. An aqueous solution having a wetting agent and a complex substituted keto-amine is provided. The solution is left on the surface for a time sufficient to remove the radioactive contaminants into the aqueous solution which is then removed. Depending on the type and condition of the surface, a concentrated acid may be added to the aqueous solution to aid in the contaminant removal process. In such a case, a pH of less than 3.0, and preferably less than 1.5 is maintained. If a concentrated acid is used, the acidic solution containing radioactive contaminants is preferably neutralized by an alkaline material to a pH of between 5.5 and 9.0. Removal of thorium contamination from railcars is one useful application of the invention. The method of the present invention has the effect of removing substantially all of the radioactive contaminants from a previously contaminated surface.
摘要翻译：从给定表面去除放射性污染物的方法。提供了具有润湿剂和络合物取代的酮 - 胺的水溶液。将溶液留在表面上足以将放射性污染物除去到水溶液中的时间，然后将其去除。根据表面的类型和状况，可以向水溶液中加入浓酸以帮助污染物去除过程。在这种情况下，保持小于3.0，优选小于1.5的pH。如果使用浓酸，则含有放射性污染物的酸性溶液优选被碱性物质中和至pH5.5至9.0。从轨道车辆去除钍污染物是本发明的一个有用的应用。本发明的方法具有从先前被污染的表面去除基本上所有的放射性污染物的作用。

49. 发明授权

US06592680B2 Integrated circuit assembly cleaning apparatus and method 失效
公开(公告)号：US06592680B2
公开(公告)日：2003-07-15
申请号：US09814446
申请日：2001-03-22
申请人： Pamela L Christison , Lawrence E. Houdek , John Pratt , Russell Bjorlie , William H Hanna , Perry H. Pierce
发明人： Pamela L Christison , Lawrence E. Houdek , John Pratt , Russell Bjorlie , William H Hanna , Perry H. Pierce
IPC分类号： B08B304
CPC分类号： B08B3/047 , Y10S134/902
摘要： An integrated circuit assembly cleaning apparatus and method allow a cleaning solution to completely fill spaces within an integrated circuit assembly. Such spaces include, for example, the thin space between the die and substrate of a flip-chip integrated circuit. The cleaning solution fills the space while the air initially occupying the space escapes. These actions are accomplished by first tilting the integrated circuit assembly from horizontal. The integrated circuit assembly is then immersed in the bath at a controllable rate to allow the cleaning solution to completely fill the space while the air in the space escapes.

50. 发明授权

US06592678B1 Cleaning method and cleaning equipment 失效
标题翻译：清洁方法和清洁设备
公开(公告)号：US06592678B1
公开(公告)日：2003-07-15
申请号：US09689408
申请日：2000-10-12
申请人： Yuji Kamikawa , Naoki Shindo , Shigenori Kitahara , Miyako Yamasaka
发明人： Yuji Kamikawa , Naoki Shindo , Shigenori Kitahara , Miyako Yamasaka
IPC分类号： B08B304
CPC分类号： H01L21/02052 , B08B3/08 , B24B37/013 , H01L21/67057 , H01L22/26 , Y10S134/902
摘要： A cleaning equipment generally comprises: a cleaning bath 30 for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe 33 for connecting the cleaning bath 30 to a pure water supply source 31; a chemical storing container 34 for storing therein a chemical; a chemical supply pipe 36 for connecting the cleaning solution supply pipe 33 to the chemical storing container 34 via an injection shut-off valve 35; and a diaphragm pump 37 for injecting a predetermined amount of chemical from the chemical storing container 34 into pure water flowing through the cleaning solution supply pipe 33. The temperature of the cleaning solution in the cleaning bath 30 is detected by, e.g., a temperature sensor 44. On the basis of a detection signal outputted from the temperature sensor 44, the amount of the chemical injected by the diaphragm pump 37 is controlled so that the concentration of the chemical is a predetermined concentration. Thus, a predetermined amount of chemical can be injected so as to clean the wafer W with a predetermined concentration of chemical.
摘要翻译：清洁设备通常包括：清洗槽30，用于在其中存储清洁溶液以允许将半导体晶片W浸入清洁溶液中以清洁晶片W的表面; 用于将清洗槽30连接到纯水供给源31的清洗液供给管33; 用于在其中存储化学品的化学品储存容器34; 用于经由注入截止阀35将清洗液供给管33与药剂收容容器34连接的化学品供给管36; 以及用于将预定量的化学品从化学物质储存容器34注入到通过清洁溶液供应管33的纯水的隔膜泵37.清洗槽30中的清洁溶液的温度例如由温度传感器基于从温度传感器44输出的检测信号，控制由隔膜泵37喷射的化学物质的量，使得化学品的浓度为预定浓度。因此，可以注入预定量的化学品以便以预定浓度的化学品清洁晶片W.

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