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41. 发明申请

US20190103851A1 BAW FILTER STRUCTURE WITH INTERNAL ELECTROSTATIC SHIELDING 审中-公开
公开(公告)号：US20190103851A1
公开(公告)日：2019-04-04
申请号：US15720706
申请日：2017-09-29
申请人： Qorvo US, Inc.
发明人： Yazid Yusuf
IPC分类号： H03H9/02
CPC分类号： H03H9/54 , H03H9/0211 , H03H9/02125 , H03H9/02141 , H03H9/0557 , H03H9/564 , H03H9/568 , H03H9/589 , H03H9/605
摘要： Embodiments of the disclosure are directed to a Bulk Acoustic Wave (BAW) filter structure with internal electrostatic shielding. In exemplary aspects disclosed herein, a shielded BAW filter structure includes a substrate, a plurality of transducers over the substrate, and a planar electrostatic shield between the substrate and a top electrode of the plurality of transducers. Each of the plurality of transducers forms a portion of a BAW resonator and resides in a filter including a parasitic capacitance. The planar electrostatic shield is coupled to a ground node and interrupts an electrical field associated with the parasitic capacitance of the filter to reduce the parasitic capacitance. Accordingly, the shielded BAW filter structure reduces the influence of parasitic capacitance providing improved filtering performance compared to an unshielded BAW filter structure.

42. 发明授权

US09998094B2 Bulk acoustic wave resonator having a frame spaced apart from an electrode 有权
公开(公告)号：US09998094B2
公开(公告)日：2018-06-12
申请号：US14918242
申请日：2015-10-20
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Jea Shik Shin , Yeong Gyu Lee , Ho Soo Park
IPC分类号： H03H9/17 , H03H9/02 , H03H9/13
CPC分类号： H03H9/171 , H03H9/02118 , H03H9/02125 , H03H9/132 , H03H9/17 , H03H9/173
摘要： A bulk acoustic wave resonator may include: a piezoelectric layer including a piezoelectric material; a first electrode disposed on one surface of the piezoelectric layer; a second electrode disposed on the another surface of the piezoelectric layer; and a frame disposed on the one surface of the piezoelectric layer and surrounding the first electrode, wherein the frame is spaced apart from the first electrode by a predetermined gap.

43. 发明申请

US20180034442A1 PIEZOELECTRIC RESONATOR DEVICE 审中-公开
公开(公告)号：US20180034442A1
公开(公告)日：2018-02-01
申请号：US15552498
申请日：2016-01-06
申请人： Daishinku Corporation
发明人： Takuya KOJO , Satoru ISHINO
IPC分类号： H03H9/13 , H03H9/05 , H01L41/316 , H03H3/04 , H01L41/23 , H03H9/02 , H03H9/10
CPC分类号： H03H9/132 , H01L41/23 , H01L41/316 , H03H3/04 , H03H9/02125 , H03H9/0523 , H03H9/0547 , H03H9/0595 , H03H9/10 , H03H9/1035 , H03H9/131 , H03H9/17 , H03H9/19 , H03H2003/022 , H03H2003/0442
摘要： A piezoelectric resonator device having a sandwich structure is provided, which is capable of improving reliability while ensuring hermeticity of the internal space in which a vibrating part of the piezoelectric resonator plate is sealed. A crystal resonator 101 includes: a crystal resonator plate 2; a first sealing member 3 covering a first excitation electrode 221 of the crystal resonator plate 2; and a second sealing member 4 covering a second excitation electrode 222 of the crystal resonator plate 2. A third through hole 269 is formed in the crystal resonator plate 2 to penetrate between a first main surface 211 and a second main surface 212. A through electrode 71 of the third through hole 269 is conducted to the first excitation electrode 221. A seventh through hole 350 is formed in the first sealing member 3 to penetrate between a first main surface 311 and a second main surface 312. The through electrode 71 of the third through hole 269 is conducted to the through electrode 71 of the seventh through hole 350. The third through hole 269 is not superimposed to the seventh through hole 350 in plan view.

44. 发明申请

US20170187352A1 ELASTIC WAVE DEVICE AND MANUFACTURING METHOD THEREFOR 审中-公开
公开(公告)号：US20170187352A1
公开(公告)日：2017-06-29
申请号：US15456651
申请日：2017-03-13
申请人： Murata Manufacturing Co., Ltd.
发明人： Masashi OMURA
IPC分类号： H03H9/25 , H03H3/08 , H03H9/64 , H03H9/145
CPC分类号： H03H9/25 , H03H3/08 , H03H9/02125 , H03H9/02228 , H03H9/02952 , H03H9/14502 , H03H9/568 , H03H9/6483
摘要： In an elastic wave device, a piezoelectric substrate is stacked on a support substrate and an IDT electrode is provided on the piezoelectric substrate. Wiring line portions are provided on the piezoelectric substrate. A first hollow portion is provided in the support substrate at least below at least one of the wiring line portions and or below a region between the wiring line portions.

45. 发明授权

US09219465B2 Bulk acoustic wave resonator 有权
标题翻译：体声波谐振器
公开(公告)号：US09219465B2
公开(公告)日：2015-12-22
申请号：US13430879
申请日：2012-03-27
申请人： Chul Soo Kim , Dal Ahn , Jae Shik Shin , In Sang Song , Duck Hwan Kim , Sang Uk Son , Ho Soo Park
发明人： Chul Soo Kim , Dal Ahn , Jae Shik Shin , In Sang Song , Duck Hwan Kim , Sang Uk Son , Ho Soo Park
IPC分类号： H03H9/02 , H03H9/13
CPC分类号： H03H9/02086 , H03H9/0211 , H03H9/02125 , H03H9/132
摘要： Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include a bulk acoustic wave resonance unit and an anti-resonant frequency modifying unit to modify an anti-resonant frequency generated from the bulk acoustic wave resonance unit.
摘要翻译：提供了一种体声波谐振器（BAWR）。 BAWR可以包括体声波谐振单元和反谐振频率修正单元，以改变从体声波谐振单元产生的反谐振频率。

46. 发明申请

US20150333730A1 Wide-band acoustically coupled thin-film BAW filter 审中-公开
标题翻译：宽带声耦合薄膜BAW滤波器
公开(公告)号：US20150333730A1
公开(公告)日：2015-11-19
申请号：US14810481
申请日：2015-07-28
申请人： Johanna Meltaus , Tuomas Pensala
发明人： Johanna Meltaus , Tuomas Pensala
IPC分类号： H03H9/205
CPC分类号： H03H9/02228 , H03H9/0095 , H03H9/02007 , H03H9/02125 , H03H9/175 , H03H9/177 , H03H9/205 , H03H9/564 , H03H9/584 , H03H2003/0414 , Y10T29/42
摘要： In a bulk acoustic wave (BAW) filter based on laterally acoustically coupled resonators on piezoelectric thin films, one can utilize two distinct acoustic plate wave modes of different nature, for example the thickness extensional (longitudinal) TE1 and the second harmonic thickness shear (TS2) mode to form a bandpass response. The invention is based on the excitation of at least two lateral standing wave resonances belonging to different plate wave modes that facilitate the transmission of signal. The passband is designed by tailoring the wave propagation characteristics in the device such that the resonances are excited at suitable frequencies to form a passband of a desired shape. The bandwidth of the filter described herein may therefore be more than twice that of the existing state-of-the-art microacoustic filters. Consequently, it has significant commercial and technological value.
摘要翻译：在基于压电薄膜上的横向声耦合谐振器的体声波（BAW）滤波器中，可以利用不同性质的两种不同的声板波模，例如厚度延伸（纵向）TE1和二次谐波厚度剪切（TS2 ）模式以形成带通响应。本发明基于属于促进信号传输的不同平板波模式的至少两个横向驻波共振的激发。该通带是通过调整装置中的波传播特性来设计的，使得谐振在合适的频率被激发以形成所需形状的通带。因此，这里描述的滤波器的带宽可以是现有的最先进的微声滤波器的两倍以上。因此，具有重要的商业和技术价值。

47. 发明授权

US09054674B2 Acoustic wave filter, communication module, and method for manufacturing the filter 有权
标题翻译：声波滤波器，通讯模块及滤波器制造方法
公开(公告)号：US09054674B2
公开(公告)日：2015-06-09
申请号：US13425001
申请日：2012-03-20
申请人： Kazunori Inoue , Jun Tsutsumi , Kazuhiro Matsumoto , Takashi Matsuda
发明人： Kazunori Inoue , Jun Tsutsumi , Kazuhiro Matsumoto , Takashi Matsuda
IPC分类号： H03H9/70 , H03H9/72 , H03H9/02 , H03H3/02 , H03H3/08 , H03H9/56 , H03H9/64
CPC分类号： H03H9/706 , H03H3/02 , H03H3/08 , H03H9/02125 , H03H9/02913 , H03H9/02952 , H03H9/568 , H03H9/6483 , H03H9/725 , Y10T29/49155
摘要： An acoustic wave filter includes: a substrate; resonators that are arranged on the substrate and excite acoustic waves; a ground terminal on the substrate; interconnection lines interconnecting the resonators and connecting predetermined ones of the resonators to the ground terminal; and a shield electrode disposed so as to be close to and face the interconnection lines.
摘要翻译：声波滤波器包括：基板; 谐振器布置在基板上并激发声波; 衬底上的接地端子; 将所述谐振器互连并将所述谐振器中的预定谐振器连接到所述接地端子的互连线; 以及设置成靠近并面对互连线的屏蔽电极。

48. 发明授权

US08819904B2 Process for producing an acoustic device having a controlled-bandgap phononic crystal structure 有权
标题翻译：具有受控带隙声子晶体结构的声学装置的制造方法
公开(公告)号：US08819904B2
公开(公告)日：2014-09-02
申请号：US13371192
申请日：2012-02-10
申请人： Marie Gorisse , Alexandre Reinhardt
发明人： Marie Gorisse , Alexandre Reinhardt
IPC分类号： H01L41/22
CPC分类号： H03H9/02653 , H01L21/0337 , H03H3/0072 , H03H3/08 , H03H9/02118 , H03H9/02125 , H03H9/02338 , H03H9/02866 , H03H9/172 , H03H9/6409
摘要： A process for producing an acoustic device having a phononic crystal structure comprising inclusions produced in a first medium distributed in a matrix of a second medium, to block propagation of acoustic waves within a bandgap frequency band, includes: defining geometric parameters of said inclusions, which have walls contacting said matrix, making at least one non-zero first wall angle, to the normal of the plane of said structure, said geometric parameters including said first wall angle; determining a function relating to variation in frequency position of said bandgap with said wall angle or relating to variation in width of said bandgap with said wall angle; determining said at least first angle, for a selected frequency position and/or selected width of the bandgap, from the function or functions determined beforehand; and producing said inclusions having at least said first wall angle in said matrix formed by said second medium.
摘要翻译：一种用于制造具有声子晶体结构的声学装置的方法，包括：在分布在第二介质的矩阵中的第一介质中产生的夹杂物，以阻挡声带在带隙频带内的传播，包括：限定所述夹杂物的几何参数，具有与所述基体接触的至少一个非零第一壁角，与所述结构的平面的法线接触，所述几何参数包括所述第一壁角; 确定与所述带隙的频率位置的变化相关的功能，或者与所述带隙的宽度的变化相关的所述壁角; 根据预先确定的功能或功能确定所选择的频率位置和/或带隙的选定宽度的至少第一角度; 并且在由所述第二介质形成的所述基体中产生至少具有所述第一壁角的所述夹杂物。

49. 发明申请

US20140042874A1 PIEZOELECTRIC VIBRATING PIECE AND PIEZOELECTRIC DEVICE 审中-公开
标题翻译：压电振动片和压电元件
公开(公告)号：US20140042874A1
公开(公告)日：2014-02-13
申请号：US13948158
申请日：2013-07-22
申请人： Nihon Dempa Kogyo Co., Ltd.
发明人： TAKEHIRO TAKAHASHI , SHUICHI MIZUSAWA , TAKUMI ARIJI
IPC分类号： H01L41/107
CPC分类号： H01L41/107 , H03H9/02125 , H03H9/02149 , H03H9/02157 , H03H9/1035 , H03H9/19
摘要： A piezoelectric vibrating piece includes a vibrator, a framing portion, a connecting portion, and an extraction electrode. The vibrator includes excitation electrodes formed on both principal surfaces. The framing portion includes an inner peripheral side facing the vibrator and an outer peripheral side on an opposite side of the inner peripheral side. The framing portion has a predetermined width from the inner peripheral side to the outer peripheral side. The connecting portion connects the vibrator and the framing portion. The extraction electrode is extracted from the excitation electrode to the framing portion via the connecting portion. The extraction electrode contacts the inner peripheral side and the outer peripheral side of the framing portion. The extraction electrode includes an end side that connects the inner peripheral side and the outer peripheral side of the extraction electrode. All of the end side is longer than the predetermined width.
摘要翻译：压电振动片包括振动器，框架部分，连接部分和引出电极。振动器包括形成在两个主表面上的激励电极。框架部分包括面向振动器的内周侧和在内周侧的相对侧上的外周侧。框架部分具有从内周侧到外周侧的预定宽度。连接部分连接振动器和框架部分。引出电极通过连接部从激励电极提取到框架部分。引出电极接触框架部分的内周侧和外周侧。引出电极包括连接引出电极的内周侧和外周侧的端侧。所有端面都比预定宽度长。

50. 发明申请

US20130069489A1 PIEZOELECTRIC DEVICE 审中-公开
标题翻译：压电器件
公开(公告)号：US20130069489A1
公开(公告)日：2013-03-21
申请号：US13606021
申请日：2012-09-07
申请人： SHUICHI MIZUSAWA
发明人： SHUICHI MIZUSAWA
IPC分类号： H01L41/053
CPC分类号： H03H9/1021 , H03H9/02125 , H03H9/17
摘要： Disclosed is a piezoelectric device mounted on a mount board, including: a piezoelectric vibrating piece having an excitation electrode and an extraction electrode extracted from the excitation electrode; and a base plate made of an insulative material, the base plate having a first face where the piezoelectric vibrating piece is placed and a second face opposite to the first face, where an external electrode is provided, wherein at least a part of an area other than the external electrode of the second face is hollowed to the first face side to form a cavity in the second face side for the mount board when the piezoelectric device is mounted on the mount board.
摘要翻译：公开了一种安装在安装板上的压电装置，包括：压电振动片，其具有从激励电极提取的激励电极和引出电极; 以及由绝缘材料制成的基板，所述基板具有放置所述压电振动片的第一面和设置有外部电极的与所述第一面相对的第二面，其中，至少一部分其他区域当第二面的外部电极被中空到第一面侧时，当压电装置安装在安装板上时，在安装板的第二面侧中形成空腔。

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