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41. 发明授权

US08925163B2 Method of manufacturing laterally coupled BAW thin films 有权
标题翻译：制造横向耦合的BAW薄膜的方法
公开(公告)号：US08925163B2
公开(公告)日：2015-01-06
申请号：US13272390
申请日：2011-10-13
申请人： Johanna Meltaus , Tuomas Pensala , Markku Ylilammi , Tommi Riekkinen , Tomi Mattila
发明人： Johanna Meltaus , Tuomas Pensala , Markku Ylilammi , Tommi Riekkinen , Tomi Mattila
IPC分类号： H04R17/00 , H03H9/02 , H03H3/02 , H03H9/56 , H03H9/00
CPC分类号： H03H9/0095 , H03H3/02 , H03H9/02125 , H03H9/562 , Y10T29/42 , Y10T29/49002 , Y10T29/49155
摘要： The invention describes a manufacturing method for an acoustic balanced-unbalanced (balun) or balanced-balanced thin-film BAW filter based on lateral acoustic coupling. In laterally acoustically coupled thin-film BAW filters (LBAW) one can realize transformation from unbalanced to balanced electric signal if the electrodes of the balanced port are placed on the opposite sides of the piezoelectric film. The manufacturing process is simpler than in the corresponding component based on vertical acoustical coupling. The device can also realize impedance transformation.
摘要翻译：本发明描述了一种基于横向声耦合的声平衡不平衡（balun）或平衡平衡薄膜BAW滤波器的制造方法。在横向声耦合薄膜BAW滤波器（LBAW）中，如果平衡端口的电极放置在压电膜的相对侧上，则可以实现从不平衡到平衡电信号的转换。制造过程比基于垂直声耦合的相应部件更简单。该器件还可实现阻抗变换。

42. 发明申请

US20130057360A1 WIDE-BAND ACOUSTICALLY COUPLED THIN-FILM BAW FILTER 有权
标题翻译：宽带超声波耦合薄膜滤波器
公开(公告)号：US20130057360A1
公开(公告)日：2013-03-07
申请号：US13642155
申请日：2011-04-21
申请人： Johanna Meltaus , Tuomas Pensala
发明人： Johanna Meltaus , Tuomas Pensala
IPC分类号： H03H9/54
CPC分类号： H03H9/02228 , H03H9/0095 , H03H9/02007 , H03H9/02125 , H03H9/175 , H03H9/177 , H03H9/205 , H03H9/564 , H03H9/584 , H03H2003/0414 , Y10T29/42
摘要： In a bulk acoustic wave (BAW) filter based on laterally acoustically coupled resonators on piezoelectric thin films, one can utilize two distinct acoustic plate wave modes of different nature, for example the thickness extensional (longitudinal) TE1 and the second harmonic thickness shear (TS2) mode to form a bandpass response. The invention is based on the excitation of at least two lateral standing wave resonances belonging to different plate wave modes that facilitate the transmission of signal. The passband is designed by tailoring the wave propagation characteristics in the device such that the resonances are excited at suitable frequencies to form a passband of a desired shape. The bandwidth of the filter described herein may therefore be more than twice that of the existing state-of-the-art microacoustic filters. Consequently, it has significant commercial and technological value.
摘要翻译：在基于压电薄膜上的横向声耦合谐振器的体声波（BAW）滤波器中，可以利用不同性质的两种不同的声板波模，例如厚度延伸（纵向）TE1和二次谐波厚度剪切（TS2 ）模式以形成带通响应。本发明基于属于促进信号传输的不同平板波模式的至少两个横向驻波共振的激发。该通带是通过调整装置中的波传播特性来设计的，使得谐振在合适的频率被激发以形成所需形状的通带。因此，这里描述的滤波器的带宽可以是现有的最先进的微声滤波器的两倍以上。因此，具有重要的商业和技术价值。

43. 发明授权

US08188548B2 Device and method for reducing a voltage dependent capacitive coupling 有权
标题翻译：用于降低依赖于电压的电容耦合的装置和方法
公开(公告)号：US08188548B2
公开(公告)日：2012-05-29
申请号：US11706558
申请日：2007-02-15
申请人： Klaus-Guenter Oppermann
发明人： Klaus-Guenter Oppermann
IPC分类号： H01L29/78
CPC分类号： H03H9/02125 , H01L21/26513
摘要： A device comprises a first means for separating a conductive layer from a semiconductor substrate and a second means for reducing a voltage dependent capacitive coupling between the conductive layer and the semiconductor substrate.
摘要翻译：一种器件包括用于从半导体衬底分离导电层的第一装置和用于减小导电层和半导体衬底之间的电压依赖性电容耦合的第二装置。

44. 发明申请

US20120086523A1 Method of manufacturing laterally coupled BAW thin films 有权
标题翻译：制造横向耦合的BAW薄膜的方法
公开(公告)号：US20120086523A1
公开(公告)日：2012-04-12
申请号：US13272390
申请日：2011-10-13
申请人： Johanna Meltaus , Tuomas Pensala , Markku Ylilammi , Tommi Riekkinen , Tomi Mattila
发明人： Johanna Meltaus , Tuomas Pensala , Markku Ylilammi , Tommi Riekkinen , Tomi Mattila
IPC分类号： H03H9/54 , H01L41/22
CPC分类号： H03H9/0095 , H03H3/02 , H03H9/02125 , H03H9/562 , Y10T29/42 , Y10T29/49002 , Y10T29/49155
摘要： The invention describes a manufacturing method for an acoustic balanced-unbalanced (balun) or balanced-balanced thin-film BAW filter based on lateral acoustic coupling. In laterally acoustically coupled thin-film BAW filters (LBAW) one can realize transformation from unbalanced to balanced electric signal if the electrodes of the balanced port are placed on the opposite sides of the piezoelectric film. The manufacturing process is simpler than in the corresponding component based on vertical acoustical coupling. The device can also realize impedance transformation.
摘要翻译：本发明描述了一种基于横向声耦合的声平衡不平衡（balun）或平衡平衡薄膜BAW滤波器的制造方法。在横向声耦合薄膜BAW滤波器（LBAW）中，如果平衡端口的电极放置在压电膜的相对侧上，则可以实现从不平衡到平衡电信号的转换。制造过程比基于垂直声耦合的相应部件更简单。该器件还可实现阻抗变换。

45. 发明授权

US07851333B2 Apparatus comprising a device and method for producing it 有权
标题翻译：一种装置，包括一种用于生产该装置的装置和方法
公开(公告)号：US07851333B2
公开(公告)日：2010-12-14
申请号：US11724603
申请日：2007-03-15
申请人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
发明人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
IPC分类号： H01L21/00
CPC分类号： H03H9/02125 , H01L21/6835 , H01L23/3121 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/96 , H01L24/97 , H01L2221/68368 , H01L2224/0401 , H01L2224/11002 , H01L2224/16225 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01068 , H01L2924/01072 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/1421 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/00
摘要： An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
摘要翻译：一种装置包括器件层结构，集成到器件层结构中的器件，绝缘载体衬底和绝缘层，其连续地位于器件层结构和绝缘载体衬底之间，绝缘层的厚度小于1 绝缘载体基板的厚度的1/10。一种装置还包括集成在设置在绝缘层上的器件层结构中的器件，设置在器件层结构上并容纳该器件的壳体层，提供该器件与壳体层相对的表面之间的电连接的触点所述器件层结构和围绕所述壳体层和所述绝缘层的模制材料，所述模制材料直接邻接在所述绝缘层的与所述器件层结构相对的表面上。

46. 发明申请

US20090295506A1 Bulk Acoustic Wave Device and a Method of its Manufacturing 失效
标题翻译：散装声波装置及其制造方法
公开(公告)号：US20090295506A1
公开(公告)日：2009-12-03
申请号：US12130756
申请日：2008-05-30
申请人： Martin Handtmann , Martin Franosch
发明人： Martin Handtmann , Martin Franosch
IPC分类号： H03H9/205 , H01L41/22
CPC分类号： H03H9/174 , H03H9/0207 , H03H9/02125 , H03H9/172 , H03H9/175 , H03H9/588 , H03H9/589 , Y10T29/42
摘要： A BAW device includes a semiconductor substrate with a surface region, an insulating layer formed on the surface region and a piezoelectric layer sandwiched by a first and second electrode, wherein the second electrode is formed on the insulating layer. The surface region is performed such that a voltage dependence of a capacitance between the substrate and the second electrode is substantially suppressed.
摘要翻译： BAW器件包括具有表面区域的半导体衬底，形成在表面区域上的绝缘层和由第一和第二电极夹在中间的压电层，其中第二电极形成在绝缘层上。执行表面区域，使得基板和第二电极之间的电容的电压依赖性被基本上抑制。

47. 发明申请

US20080197423A1 Device and method for reducing a voltage dependent capacitive coupling 有权
标题翻译：用于降低依赖于电压的电容耦合的装置和方法
公开(公告)号：US20080197423A1
公开(公告)日：2008-08-21
申请号：US11706558
申请日：2007-02-15
申请人： Klaus-Guenter Oppermann
发明人： Klaus-Guenter Oppermann
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H03H9/02125 , H01L21/26513
摘要： A device comprises a first means for separating a conductive layer from a semiconductor substrate and a second means for reducing a voltage dependent capacitive coupling between the conductive layer and the semiconductor substrate.
摘要翻译：一种器件包括用于从半导体衬底分离导电层的第一装置和用于减小导电层和半导体衬底之间的电压依赖性电容耦合的第二装置。

48. 发明申请

US20070236310A1 Electronic device on substrate with cavity and mitigated parasitic leakage path 失效
标题翻译：衬底上的电子器件具有空腔和减轻的寄生泄漏路径
公开(公告)号：US20070236310A1
公开(公告)日：2007-10-11
申请号：US11373434
申请日：2006-03-10
申请人： R. Fazzio , Richard Ruby , Christopher Wade , Michael Frank , David Feld
发明人： R. Fazzio , Richard Ruby , Christopher Wade , Michael Frank , David Feld
IPC分类号： H03H9/54
CPC分类号： H03H9/02118 , H03H3/02 , H03H9/02125 , H03H9/172
摘要： An electronic device. The electronic device includes a first electrode and a coating layer. The electronic device is fabricated on a substrate; the substrate has a cavity created in a top surface of the substrate; and the first electrode is electrically coupled to the substrate. The coating layer coats at least part of a substrate surface in the cavity, and the presence of the coating layer results in a mitigation of at least one parasitic leakage path between the first electrode and an additional electrode fabricated on the substrate.
摘要翻译：电子设备。电子器件包括第一电极和涂层。电子器件制造在衬底上; 衬底具有在衬底的顶表面中产生的空腔; 并且第一电极电耦合到衬底。涂层涂覆在空腔中的基底表面的至少一部分，并且涂层的存在导致在第一电极和在基底上制造的附加电极之间的至少一个寄生泄漏路径的减轻。

49. 发明申请

US20070176513A1 Thin-film piezoelectric resonator and filter circuit 审中-公开
标题翻译：薄膜压电谐振器和滤波电路
公开(公告)号：US20070176513A1
公开(公告)日：2007-08-02
申请号：US10581030
申请日：2006-03-08
申请人： Ryoichi Ohara , Naoko Yanase , Kenya Sano , Takaaki Yasumoto , Kazuhiko Itaya
发明人： Ryoichi Ohara , Naoko Yanase , Kenya Sano , Takaaki Yasumoto , Kazuhiko Itaya
IPC分类号： H01L41/09
CPC分类号： H03H9/174 , H03H9/02125 , H03H9/132 , H03H9/588 , H03H9/605
摘要： It is possible to provide a resonator structure that does not cause a variation in anti-resonant frequency can be achieved, even if the cavity and the upper and lower electrode shift. A thin-film piezoelectric resonator includes: a lower electrode provided on the principal surface of the substrate so as to cover the cavity; a piezoelectric film provided on the lower electrode so as to be located above the cavity; and an upper electrode. The upper electrode includes: a main portion which overlaps a part of the cavity, a protruding portion connected to the main portion, an extension portion provided at the opposite side of the main portion. The length of the protruding portion in a direction perpendicular to a direction of connecting to the main portion is substantially the same as the length of the connecting portion in a direction perpendicular to a direction of connecting to the main portion.
摘要翻译：即使空腔和上下电极发生偏移，也可以提供不会引起抗共振频率变化的谐振器结构。薄膜压电谐振器包括：设置在基板的主表面上以覆盖空腔的下电极; 设置在所述下电极上以便位于所述空腔上方的压电膜; 和上电极。上部电极包括：与空腔的一部分重叠的主要部分，连接到主要部分的突出部分，设置在主要部分相对侧的延伸部分。突出部分在垂直于与主要部分连接的方向的方向上的长度基本上与连接部分在垂直于连接主体部分的方向的方向上的长度相同。

50. 发明申请

US20040145430A1 Component operating with bulk acoustic waves and a method for producing the component 有权
标题翻译：使用体声波操作的部件和用于制造部件的方法
公开(公告)号：US20040145430A1
公开(公告)日：2004-07-29
申请号：US10757841
申请日：2004-01-15
申请人： EPCOS AG
发明人： Thomas Metzger
IPC分类号： H03H009/56
CPC分类号： H03H9/175 , H03H3/02 , H03H9/02125 , H03H9/584 , H03H9/589 , Y10T29/42
摘要： A component operating with bulk acoustic waves has a carrier substrate, a thin-film resonator and an acoustic mirror arranged between the resonator and carrier substrate. The acoustic mirror is formed by at least one high acoustic impedance layer, which is covered by a low acoustic impedance layer and the uppermost low impedance acoustic layer is planarized to form a flat planar surface on which the thin-film resonator is formed.
摘要翻译：使用体声波工作的部件具有布置在谐振器和载体基板之间的载体衬底，薄膜谐振器和声镜。声镜由至少一个高声阻抗层形成，其被低声阻抗层覆盖，并且最上面的低阻抗声层被平坦化以形成其上形成有薄膜谐振器的平坦平面。

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