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1. 发明授权

US07728485B2 Bulk acoustic wave device and a method of its manufacturing 失效
标题翻译：体声波器件及其制造方法
公开(公告)号：US07728485B2
公开(公告)日：2010-06-01
申请号：US12130756
申请日：2008-05-30
申请人： Martin Handtmann , Martin Franosch
发明人： Martin Handtmann , Martin Franosch
IPC分类号： H01L41/053 , H03H9/02 , H01L41/22 , H04R17/10 , C23F1/00
CPC分类号： H03H9/174 , H03H9/0207 , H03H9/02125 , H03H9/172 , H03H9/175 , H03H9/588 , H03H9/589 , Y10T29/42
摘要： A BAW device includes a semiconductor substrate with a surface region, an insulating layer formed on the surface region and a piezoelectric layer sandwiched by a first and second electrode, wherein the second electrode is formed on the insulating layer. The surface region is performed such that a voltage dependence of a capacitance between the substrate and the second electrode is substantially suppressed.
摘要翻译： BAW器件包括具有表面区域的半导体衬底，形成在表面区域上的绝缘层和由第一和第二电极夹在中间的压电层，其中第二电极形成在绝缘层上。执行表面区域，使得基板和第二电极之间的电容的电压依赖性被基本上抑制。

2. 发明申请

US20080224297A1 Apparatus comprising a device and method for producing it 有权
标题翻译：一种装置，包括用于生产该装置的装置和方法
公开(公告)号：US20080224297A1
公开(公告)日：2008-09-18
申请号：US11724603
申请日：2007-03-15
申请人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
发明人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
IPC分类号： H01L23/15 , H01L21/58 , H01L23/48
CPC分类号： H03H9/02125 , H01L21/6835 , H01L23/3121 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/96 , H01L24/97 , H01L2221/68368 , H01L2224/0401 , H01L2224/11002 , H01L2224/16225 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01068 , H01L2924/01072 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/1421 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/00
摘要： An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
摘要翻译：一种装置包括器件层结构，集成到器件层结构中的器件，绝缘载体衬底和绝缘层，其连续地位于器件层结构和绝缘载体衬底之间，绝缘层的厚度小于1 绝缘载体基板的厚度的1/10。一种装置还包括集成在设置在绝缘层上的器件层结构中的器件，设置在器件层结构上并容纳该器件的壳体层，提供该器件与壳体层相对的表面之间的电连接的触点所述器件层结构和围绕所述壳体层和所述绝缘层的模制材料，所述模制材料直接邻接在所述绝缘层的与所述器件层结构相对的表面上。

3. 发明申请

US20110042764A1 APPARATUS COMPRISING A DEVICE AND METHOD FOR PRODUCING SAME 有权
标题翻译：包含装置的装置及其制造方法
公开(公告)号：US20110042764A1
公开(公告)日：2011-02-24
申请号：US12938568
申请日：2010-11-03
申请人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
发明人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
IPC分类号： H01L29/84
CPC分类号： H03H9/02125 , H01L21/6835 , H01L23/3121 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/96 , H01L24/97 , H01L2221/68368 , H01L2224/0401 , H01L2224/11002 , H01L2224/16225 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01068 , H01L2924/01072 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/1421 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/00
摘要： An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
摘要翻译：一种装置包括器件层结构，集成到器件层结构中的器件，绝缘载体衬底和绝缘层，其连续地位于器件层结构和绝缘载体衬底之间，绝缘层的厚度小于1 绝缘载体基板的厚度的1/10。一种装置还包括集成在设置在绝缘层上的器件层结构中的器件，设置在器件层结构上并容纳该器件的壳体层，提供该器件与壳体层相对的表面之间的电连接的触点所述器件层结构和围绕所述壳体层和所述绝缘层的模制材料，所述模制材料直接邻接在所述绝缘层的与所述器件层结构相对的表面上。

4. 发明授权

US08618621B2 Semiconductor device layer structure and method of fabrication 有权
标题翻译：半导体器件层结构及其制造方法
公开(公告)号：US08618621B2
公开(公告)日：2013-12-31
申请号：US12938568
申请日：2010-11-03
申请人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
发明人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
IPC分类号： H01L29/84
CPC分类号： H03H9/02125 , H01L21/6835 , H01L23/3121 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/96 , H01L24/97 , H01L2221/68368 , H01L2224/0401 , H01L2224/11002 , H01L2224/16225 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01068 , H01L2924/01072 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/1421 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/00
摘要： An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
摘要翻译：一种装置包括器件层结构，集成到器件层结构中的器件，绝缘载体衬底和绝缘层，其连续地位于器件层结构和绝缘载体衬底之间，绝缘层的厚度小于1 绝缘载体基板的厚度的1/10。一种装置还包括集成在设置在绝缘层上的器件层结构中的器件，设置在器件层结构上并容纳该器件的壳体层，提供该器件与壳体层相对的表面之间的电连接的触点所述器件层结构和围绕所述壳体层和所述绝缘层的模制材料，所述模制材料直接邻接在所述绝缘层的与所述器件层结构相对的表面上。

5. 发明授权

US07851333B2 Apparatus comprising a device and method for producing it 有权
标题翻译：一种装置，包括一种用于生产该装置的装置和方法
公开(公告)号：US07851333B2
公开(公告)日：2010-12-14
申请号：US11724603
申请日：2007-03-15
申请人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
发明人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
IPC分类号： H01L21/00
CPC分类号： H03H9/02125 , H01L21/6835 , H01L23/3121 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/96 , H01L24/97 , H01L2221/68368 , H01L2224/0401 , H01L2224/11002 , H01L2224/16225 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01068 , H01L2924/01072 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/1421 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/00
摘要： An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
摘要翻译：一种装置包括器件层结构，集成到器件层结构中的器件，绝缘载体衬底和绝缘层，其连续地位于器件层结构和绝缘载体衬底之间，绝缘层的厚度小于1 绝缘载体基板的厚度的1/10。一种装置还包括集成在设置在绝缘层上的器件层结构中的器件，设置在器件层结构上并容纳该器件的壳体层，提供该器件与壳体层相对的表面之间的电连接的触点所述器件层结构和围绕所述壳体层和所述绝缘层的模制材料，所述模制材料直接邻接在所述绝缘层的与所述器件层结构相对的表面上。

6. 发明申请

US20090295506A1 Bulk Acoustic Wave Device and a Method of its Manufacturing 失效
标题翻译：散装声波装置及其制造方法
公开(公告)号：US20090295506A1
公开(公告)日：2009-12-03
申请号：US12130756
申请日：2008-05-30
申请人： Martin Handtmann , Martin Franosch
发明人： Martin Handtmann , Martin Franosch
IPC分类号： H03H9/205 , H01L41/22
CPC分类号： H03H9/174 , H03H9/0207 , H03H9/02125 , H03H9/172 , H03H9/175 , H03H9/588 , H03H9/589 , Y10T29/42
摘要： A BAW device includes a semiconductor substrate with a surface region, an insulating layer formed on the surface region and a piezoelectric layer sandwiched by a first and second electrode, wherein the second electrode is formed on the insulating layer. The surface region is performed such that a voltage dependence of a capacitance between the substrate and the second electrode is substantially suppressed.
摘要翻译： BAW器件包括具有表面区域的半导体衬底，形成在表面区域上的绝缘层和由第一和第二电极夹在中间的压电层，其中第二电极形成在绝缘层上。执行表面区域，使得基板和第二电极之间的电容的电压依赖性被基本上抑制。

7. 发明申请

US20120319530A1 BULK ACOUSTIC RESONATOR COMPRISING NON-PIEZOELECTRIC LAYER 有权
标题翻译：包含非压电层的大容量谐振谐振器
公开(公告)号：US20120319530A1
公开(公告)日：2012-12-20
申请号：US13161946
申请日：2011-06-16
申请人： Dariusz BURAK , Jyrki KAITILA , Alexandre SHIRAKAWA , Martin Handtmann , Phil NIKKEL
发明人： Dariusz BURAK , Jyrki KAITILA , Alexandre SHIRAKAWA , Martin Handtmann , Phil NIKKEL
IPC分类号： H01L41/00
CPC分类号： H03H9/173 , H03H9/585
摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer.
摘要翻译：在代表性的实施例中，体声波（BAW）谐振器结构包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极，其中所述第一压电层的晶体的c轴取向基本上彼此对准; 设置在所述第二电极上的第二压电层; 非压电层; 以及设置在第二压电层上的第三电极。

8. 发明申请

US20090096549A1 Apparatus with acoustically coupled BAW resonators and a method for matching impedances 有权
标题翻译：具有声耦合BAW谐振器的装置和用于匹配阻抗的方法
公开(公告)号：US20090096549A1
公开(公告)日：2009-04-16
申请号：US11871665
申请日：2007-10-12
申请人： Robert Thalhammer , Martin Handtmann , Jyrki Kaitila , Winfried Nessler , Lueder Elbrecht
发明人： Robert Thalhammer , Martin Handtmann , Jyrki Kaitila , Winfried Nessler , Lueder Elbrecht
IPC分类号： H03H9/58 , H01L41/22
CPC分类号： H03H9/584 , H03H9/0004 , H03H9/0095 , H03H9/60 , Y10T29/42
摘要： An apparatus includes a first bulk acoustic wave (BAW) device including a first impedance and a second BAW device including a second impedance, wherein the first and second impedances are different and the first and second BAW devices are acoustically coupled.
摘要翻译：一种装置包括包括第一阻抗的第一体声波（BAW）装置和包括第二阻抗的第二BAW装置，其中第一和第二阻抗不同，并且第一和第二BAW装置是声学耦合的。

9. 发明授权

US07339445B2 BAW duplexer without phase shifter 有权
标题翻译： BAW双工器无移相器
公开(公告)号：US07339445B2
公开(公告)日：2008-03-04
申请号：US11246996
申请日：2005-10-07
申请人： Robert Aigner , Martin Handtmann
发明人： Robert Aigner , Martin Handtmann
IPC分类号： H03H9/70
CPC分类号： H03H9/706
摘要： A duplexer for connection with an antenna comprises an antenna port, a transmitting filter comprising bulk acoustic wave (BAW) resonators having a first antenna side impedance coupled with the antenna port, a receiving filter comprising BAW resonators having a second antenna side impedance coupled with the antenna port, and a shunt inductance coupled between the antenna port and ground. The shunt inductance and the first and second antenna side impedances of the transmitting filter and the receiving filter are selected in such a way that the shunt inductance turns the first and second input impedance in a negative direction in a Smith diagram.
摘要翻译：用于与天线连接的双工器包括天线端口，发射滤波器，包括具有与天线端口耦合的第一天线侧阻抗的体声波（BAW）谐振器，接收滤波器，包括具有与第二天线侧阻抗耦合的第二天线侧阻抗的BAW谐振器天线端口和耦合在天线端口和地之间的并联电感。选择发射滤波器和接收滤波器的并联电感和第一和第二天线侧阻抗，使得并联电感在史密斯图中将负的第一和第二输入阻抗转变成负方向。

10. 发明申请

US20060290446A1 BAW apparatus 有权
标题翻译： BAW设备
公开(公告)号：US20060290446A1
公开(公告)日：2006-12-28
申请号：US11174446
申请日：2005-07-01
申请人： Robert Aigner , Martin Handtmann
发明人： Robert Aigner , Martin Handtmann
IPC分类号： H03H9/70 , H03H9/58
CPC分类号： H03H9/605 , H03H9/02015 , H03H9/02133
摘要： A description is given of a BAW apparatus having a first BAW resonator and a second BAW resonator which are connected antiparallel to one another so as to reduce non-linear effects, in particular harmonics.
摘要翻译：给出了具有第一BAW谐振器和第二BAW谐振器的BAW装置的描述，其彼此反平行连接，以便减少非线性效应，特别是谐波。

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