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41. 发明授权

US08816415B2 Photodiode with concave reflector 有权
标题翻译：具有凹面反射器的光电二极管
公开(公告)号：US08816415B2
公开(公告)日：2014-08-26
申请号：US13742747
申请日：2013-01-16
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Che-Min Lin , Volume Chien , Chih-Kang Chao , Chi-Cherng Jeng , Pin Chia Su , Chih-Mu Huang
IPC分类号： H01L31/062
CPC分类号： H01L31/02327 , H01L27/14629 , H01L31/0232 , H01L31/10 , H01L31/115 , H01L31/18
摘要： A photodiode structure includes a photodiode and a concave reflector disposed below the photodiode. The concave reflector is arranged to reflect incident light from above back toward the photodiode.
摘要翻译：光电二极管结构包括设置在光电二极管下方的光电二极管和凹面反射器。凹面反射器被布置成将来自上方的入射光反射到光电二极管。

42. 发明申请

US20140145735A1 ULTRA-COMPACT, PASSIVE, VARACTOR-BASED WIRELESS SENSOR USING QUANTUM CAPACITANCE EFFECT IN GRAPHENE 有权
标题翻译：超声波，无源，基于变压器的无线传感器，在图形中使用量子电容效应
公开(公告)号：US20140145735A1
公开(公告)日：2014-05-29
申请号：US14111753
申请日：2012-04-13
申请人： Steven J. Koester
发明人： Steven J. Koester
IPC分类号： G01N27/22 , G01R27/26
CPC分类号： G01N27/221 , G01N27/227 , G01R27/2605 , H01L29/1025 , H01L29/1606 , H01L29/42312 , H01L29/93 , H01L31/085 , H01L31/115
摘要： An electrical device includes at least one graphene quantum capacitance varactor. In some examples, the graphene quantum capacitance varactor includes an insulator layer, a graphene layer disposed on the insulator layer, a dielectric layer disposed on the graphene layer, a gate electrode formed on the dielectric layer, and at least one contact electrode disposed on the graphene layer and making electrical contact with the graphene layer. In other examples, the graphene quantum capacitance varactor includes an insulator layer, a gate electrode recessed in the insulator layer, a dielectric layer formed on the gate electrode, a graphene layer formed on the dielectric layer, wherein the graphene layer comprises an exposed surface opposite the dielectric layer, and at least one contact electrode formed on the graphene layer and making electrical contact with the graphene layer.
摘要翻译：电气装置包括至少一个石墨烯量子电容变容二极管。在一些示例中，石墨烯量子电容变容二极管包括绝缘体层，设置在绝缘体层上的石墨烯层，设置在石墨烯层上的电介质层，形成在电介质层上的栅电极，以及设置在绝缘体层上的至少一个接触电极石墨烯层，并与石墨烯层电接触。在其他实例中，石墨烯量子电容变容二极管包括绝缘体层，凹入绝缘体层中的栅电极，形成在栅电极上的电介质层，形成在电介质层上的石墨烯层，其中石墨烯层包括相对的暴露表面所述电介质层和形成在所述石墨烯层上并与所述石墨烯层电接触的至少一个接触电极。

43. 发明授权

US08729652B2 Semiconductor device for radiation detection 有权
标题翻译：用于辐射检测的半导体器件
公开(公告)号：US08729652B2
公开(公告)日：2014-05-20
申请号：US12282932
申请日：2007-03-13
申请人： Anco Heringa , Erik Jan Lous , Wibo Daniel Van Noort , Wilhelmus Cornelis Maria Peters , Joost Willem Christiaan Veltkamp
发明人： Anco Heringa , Erik Jan Lous , Wibo Daniel Van Noort , Wilhelmus Cornelis Maria Peters , Joost Willem Christiaan Veltkamp
IPC分类号： H01L31/115
CPC分类号： G01T1/2018 , H01L27/14659 , H01L27/14663 , H01L31/115
摘要： The invention provides a semiconductor device (11) for radiation detection, which comprises a substrate region (1) of a substrate semiconductor material, such as silicon, and a detection region (3) at a surface of the semiconductor device (11), in which detection region (3) charge carriers of a first conductivity type, such as electrons, are generated and detected upon incidence of electromagnetic radiation (L) on the semiconductor device (11). The semiconductor device (11) further comprises a barrier region (2,5,14) of a barrier semiconductor material or an isolation material, which barrier region (2,5,14) is an obstacle between the substrate region (1) and the detection region (3) for charge carriers that are generated in the substrate region (1) by penetration of ionizing radiation (X), such as X-rays, into the substrate region (1). This way the invention provides a semiconductor device (11) for radiation detection in which the influence on the performance of the semiconductor device (11) of ionizing radiation (X), such as X-rays, that penetrates into the substrate region (1) is reduced.
摘要翻译：本发明提供了一种用于放射线检测的半导体器件（11），其包括诸如硅的衬底半导体材料的衬底区域（1）和在半导体器件（11）的表面处的检测区域（3）在半导体器件（11）上的电磁辐射（L）入射时，产生并检测出检测区域（3）对第一导电类型（例如电子）的载流子。半导体器件（11）还包括阻挡半导体材料或隔离材料的阻挡区域（2,5,14），所述阻挡区域（2,5,14）是衬底区域（1）和衬底区域用于通过诸如X射线的电离辐射（X）穿透而在衬底区域（1）中产生的电荷载体的检测区域（3）。这样，本发明提供了一种用于放射线检测的半导体器件（11），其中对穿透到衬底区域（1）中的诸如X射线的电离辐射（X）的半导体器件（11）的性能的影响，降低了。

44. 发明申请

US20140084301A1 LATERAL SILICON-ON-INSULATOR BIPOLAR JUNCTION TRANSISTOR RADIATION DOSIMETER 有权
标题翻译：横向绝缘子绝缘子双极晶体管辐射剂量计
公开(公告)号：US20140084301A1
公开(公告)日：2014-03-27
申请号：US13625440
申请日：2012-09-24
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Jin Cai , Effendi Leobandung , Tak H. Ning , Jeng-Bang Yau
IPC分类号： G01T1/02 , H01L31/0312 , H01L31/028 , H01L31/0304
CPC分类号： H01L27/14 , G01T1/026 , H01L21/02 , H01L27/14689 , H01L31/028 , H01L31/0304 , H01L31/0312 , H01L31/1105 , H01L31/115
摘要： A radiation dosimeter includes a semiconductor substrate and a buried insulator layer disposed on the semiconductor substrate. The buried insulator layer has a plurality of charge traps. A semiconductor layer is disposed on the buried insulator layer. The semiconductor layer has an emitter, an intrinsic base, and a collector laterally arranged with respect to one another. In response to radiation exposure by the radiation dosimeter, positive charges are trapped in the plurality of charge traps in the buried insulator layer, the amount of positive charge trapped being used to determine the amount of radiation exposure. A method for radiation dosimetry includes providing a radiation dosimeter, where the radiation dosimeter includes a lateral silicon-on-insulator bipolar junction transistor having a buried insulator layer; exposing the radiation dosimeter to ionizing radiation; determining a change in one of the collector current and current gain of the radiation dosimeter; and determining an amount of the radiation dose based on the change in one of the collector current and current gain.
摘要翻译：辐射剂量计包括设置在半导体衬底上的半导体衬底和掩埋绝缘体层。掩埋绝缘体层具有多个充电陷阱。半导体层设置在埋层绝缘体层上。半导体层具有相对于彼此横向布置的发射极，本征基极和集电极。响应于辐射剂量计的辐射照射，正电荷被捕获在掩埋绝缘体层中的多个电荷陷阱中，所捕获的正电荷量用于确定辐射暴露量。辐射剂量测定方法包括提供辐射剂量计，其中辐射剂量计包括具有埋层绝缘体层的横向绝缘体上硅绝缘体双极结型晶体管; 将辐射剂量计暴露于电离辐射; 确定辐射剂量计的集电极电流和电流增益之一的变化; 以及基于集电极电流和电流增益之一的变化来确定辐射剂量的量。

45. 发明授权

US08674358B2 Radiation detecting element and radiation detecting device 有权
标题翻译：辐射检测元件和辐射检测装置
公开(公告)号：US08674358B2
公开(公告)日：2014-03-18
申请号：US13321246
申请日：2010-05-17
申请人： Takehisa Sasaki
发明人： Takehisa Sasaki
IPC分类号： H01L21/02
CPC分类号： H01L31/085 , G01T1/2018 , G01T1/249 , H01L31/1085 , H01L31/115
摘要： There has been such a problem that radiation detecting elements using semiconductor elements have a low radiation detection efficiency, since the radiation detecting elements easily transmit radiation, even though the radiation detecting elements have merits, such as small dimensions and light weight. Disclosed are a radiation detecting element and a radiation detecting device, wherein a film formed of a metal, such as tungsten, is formed on the radiation incident surface of the radiation detecting element, and the incident energy of the radiation is attenuated. The efficiency of generating carriers by way of radiation incidence is improved by attenuating the incident energy, the thickness of the metal film is optimized, and the radiation detection efficiency is improved.
摘要翻译：存在使用半导体元件的放射线检测元件具有低辐射检测效率的问题，因为即使辐射检测元件具有尺寸小，重量轻等优点，因为辐射检测元件容易发射辐射。公开了一种放射线检测元件和放射线检测装置，其中由诸如钨的金属形成的膜形成在辐射检测元件的辐射入射表面上，并且辐射的入射能量被衰减。通过衰减入射能量，通过辐射入射发生载流子的效率得到改善，金属膜的厚度被优化，辐射检测效率得到提高。

46. 发明授权

US08647909B2 Array of alpha particle sensors 失效
标题翻译： α粒子传感器阵列
公开(公告)号：US08647909B2
公开(公告)日：2014-02-11
申请号：US13357728
申请日：2012-01-25
申请人： Ethan H. Cannon , Michael J. Hauser , Timothy D. Sullivan
发明人： Ethan H. Cannon , Michael J. Hauser , Timothy D. Sullivan
IPC分类号： H01L21/00
CPC分类号： H01L31/115 , H01L23/552 , H01L23/556 , H01L25/0657 , H01L2924/0002 , H01L2924/00
摘要： An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation particles intersect the device layer can be calculated with coarse precision (e.g., to within 10 s of microns).
摘要翻译：辐射传感器或检测器阵列集成在三维半导体IC内。传感器阵列相对靠近电路（例如，微处理器）的器件层定位，以防止电离辐射粒子的不利影响。因此，辐射粒子与器件层相交的位置可以用粗精度（例如，在10微米以内）来计算。

47. 发明授权

US08624105B2 Energy conversion device with support member having pore channels 有权
标题翻译：能量转换装置具有支撑构件，具有孔隙通道
公开(公告)号：US08624105B2
公开(公告)日：2014-01-07
申请号：US12772913
申请日：2010-05-03
申请人： Dmitri Routkevitch , Rikard A. Wind
发明人： Dmitri Routkevitch , Rikard A. Wind
IPC分类号： H01L31/00
CPC分类号： H01M10/0436 , C01B3/042 , G01T1/24 , G01T3/08 , H01L31/035281 , H01L31/115 , H01L33/18 , H01L33/24 , H01L51/0037 , H01L51/4213 , H01L2924/0002 , H01M6/40 , H01M8/1097 , Y02E10/549 , Y02E60/364 , Y02P20/135 , Y02P70/56 , H01L2924/00
摘要： Energy devices such as energy conversion devices and energy storage devices and methods for the manufacture of such devices. The devices include a support member having an array of pore channels having a small average pore channel diameter and having a pore channel length. Material layers that may include energy conversion materials and conductive materials are coaxially disposed within the pore channels to form material rods having a relatively small cross-section and a relatively long length. By varying the structure of the materials in the pore channels, various energy devices can be fabricated, such as photovoltaic (PV) devices, radiation detectors, capacitors, batteries and the like.
摘要翻译：能量装置如能量转换装置和储能装置以及用于制造这种装置的方法。这些装置包括具有孔通道阵列的支撑构件，其具有小的平均孔道直径并具有孔隙长度。可以包括能量转换材料和导电材料的材料层同轴地设置在孔隙通道内以形成具有相对小的横截面和相对长的长度的材料棒。通过改变孔道中的材料的结构，可以制造各种能量装置，例如光伏（PV）装置，辐射探测器，电容器，电池等。

48. 发明申请

US20130341752A1 TWO-DIMENSIONAL GUARD STRUCTURE AND A RADIATION DETECTOR WITH THE SAME 有权
标题翻译：两维结构和一个辐射检测器
公开(公告)号：US20130341752A1
公开(公告)日：2013-12-26
申请号：US13528065
申请日：2012-06-20
申请人： Pasi KOSTAMO
发明人： Pasi KOSTAMO
IPC分类号： H01L29/06
CPC分类号： H01L31/02005 , G01T1/241 , G01T1/2928 , H01L29/0619 , H01L31/022408 , H01L31/115
摘要： A semiconductor device comprises a piece of semiconductor material. On a surface of said piece of semiconductor material, a number of electrodes exist and are configured to assume different electric potentials. A guard structure comprises a two-dimensional array of conductive patches, at least some of which are left to assume an electric potential under the influence of electric potentials existing at said electrodes.
摘要翻译：半导体器件包括一块半导体材料。在所述半导体材料片的表面上存在许多电极，并且被配置成具有不同的电位。保护结构包括导电贴片的二维阵列，其中至少一些在电极存在的电位的影响下被置于呈现电位。

49. 发明申请

US20130126746A1 ARRAY OF VIRTUAL FRISCH-GRID DETECTORS WITH COMMON CATHODE AND REDUCED LENGTH OF SHIELDING ELECTRODES 有权
标题翻译：具有通用阴极的虚拟自动检测器阵列和屏蔽电极长度减小的阵列
公开(公告)号：US20130126746A1
公开(公告)日：2013-05-23
申请号：US13695899
申请日：2011-05-02
申请人： Aleksey E. Bolotnikov , Ge Yang , Giuseppe Camarda , Yonggang Cui , Anwar Hossain , Ki Hyun Kim , Ralph B. James
发明人： Aleksey E. Bolotnikov , Ge Yang , Giuseppe Camarda , Yonggang Cui , Anwar Hossain , Ki Hyun Kim , Ralph B. James
IPC分类号： G01T1/24
CPC分类号： G01T1/241 , G01T1/247 , G01T1/2928 , H01L31/115
摘要： A novel radiation detector system is disclosed that solves the electron trapping problem by optimizing shielding of the individual virtual Frisch-grid detectors in an array configuration.
摘要翻译：公开了一种新颖的辐射探测器系统，其通过优化阵列配置中的各个虚拟棱镜检测器的屏蔽来解决电子俘获问题。

50. 发明申请

US20130125963A1 CONVERSION OF HIGH-ENERGY PHOTONS INTO ELECTRICITY 有权
标题翻译：高能光电转换为电力
公开(公告)号：US20130125963A1
公开(公告)日：2013-05-23
申请号：US13521220
申请日：2011-01-01
申请人： Michl Binderbauer , Toshiki Tajima
发明人： Michl Binderbauer , Toshiki Tajima
IPC分类号： H01L31/0725
CPC分类号： H01L31/0725 , G01T1/28 , G21H1/04 , G21H1/06 , H01L31/0352 , H01L31/115 , Y02E10/542
摘要： Systems and methods for the conversion of energy of high-energy photons into electricity which utilize a series of materials with differing atomic charges to take advantage of the emission of a large multiplicity of electrons by a single high-energy photon via a cascade of Auger electron emissions. In one embodiment, a high-energy photon converter preferably includes a linearly layered nanometric-scaled wafer made up of layers of a first material sandwiched between layers of a second material having an atomic charge number differing from the atomic charge number of the first material. In other embodiments, the nanometric-scaled layers are configured in a tubular or shell-like configuration and/or include layers of a third insulator material.
摘要翻译：用于将高能光子能量转换成电的系统和方法，其利用具有不同原子电荷的一系列材料，以利用单个高能光子通过俄歇电子级联发射大量多个电子排放。在一个实施例中，高能量光子转换器优选地包括由夹在第二材料的层之间的第一材料的层构成的线性层状纳米尺度晶片，其具有与第一材料的原子电荷数不同的原子电荷数。在其他实施例中，纳米尺度的层被构造成管状或壳状构造和/或包括第三绝缘体材料的层。

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