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41. 发明申请

US20160228915A1 CMUT DEVICE MANUFACTURING METHOD, CMUT DEVICE AND APPARATUS 审中-公开
标题翻译： CMUT设备制造方法，CMUT设备和设备
公开(公告)号：US20160228915A1
公开(公告)日：2016-08-11
申请号：US15021962
申请日：2014-09-15
申请人： KONINKLIJKE PHILPS N.V.
发明人： PETER DIRKSEN , MARCEL MULDER , ADRIAAN LEEUWESTEIN
IPC分类号： B06B1/02 , B81C1/00 , B81B3/00 , H02N1/00
CPC分类号： B06B1/0292 , B81B3/0021 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C2201/0109 , B81C2201/013 , H02N1/006
摘要： Disclosed is a method of manufacturing a capacitive micro-machined ultrasonic transducer (CMUT) device comprising a first electrode (112) on a substrate (110) and a second electrode (122) embedded in an electrically insulating membrane, the first electrode and the membrane being separated by a cavity (130) formed by the removal of a sacrificial material (116) in between the first electrode and the membrane, the method comprising forming a membrane portion (22) on the second electrode and a further membrane portion (24) extending from the membrane portion towards the substrate alongside the sacrificial material, wherein the respective thicknesses the membrane portion and the further membrane portion exceed the thickness of the sacrificial material prior to forming said cavity. A CMUT device manufactured in accordance with this method and an apparatus comprising such a CMUT device are also disclosed.
摘要翻译：公开了一种制造电容微加工超声波换能器（CMUT）装置的方法，该装置包括在基板上的第一电极和埋在电绝缘膜中的第二电极，第一电极和膜由通过在第一电极和膜之间移除牺牲材料（116）而形成的空腔（130）隔开，所述方法包括在所述第二电极上形成膜部分（22）和另外的膜部分（24）在牺牲材料旁边从膜部分朝向衬底延伸，其中在形成所述腔体之前，膜部分和另外的膜部分超过牺牲材料的厚度的相应厚度。还公开了根据该方法制造的CMUT装置和包括这种CMUT装置的装置。

42. 发明申请

US20160221038A1 CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER (CMUT) FORMING 审中-公开
标题翻译：电容式微型超声波传感器（CMUT）形成
公开(公告)号：US20160221038A1
公开(公告)日：2016-08-04
申请号：US15095264
申请日：2016-04-11
申请人： Texas Instruments Incorporated
发明人： PETER B. JOHNSON , IRA OAKTREE WYGANT
IPC分类号： B06B1/02 , B81C1/00
CPC分类号： B06B1/0292 , B06B2201/76 , B81B7/007 , B81B2203/0127 , B81B2207/096 , B81C1/00301 , B81C2201/013 , B81C2203/036 , H02N1/006 , H04R19/005 , H05K2201/09845 , H05K2201/09863
摘要： A Capacitive Micromachined Ultrasonic Transducer (CMUT) device including at least one CMUT element with at least one CMUT cell is formed. A patterned dielectric layer thereon including a thick and a thin dielectric region is formed on a top side of a single crystal material substrate. A second substrate is bonded to the thick dielectric region to provide at least one sealed micro-electro-mechanical system (MEMS) cavity. The second substrate is thinned to reduce a thickness of said second substrate to provide a membrane layer. The membrane layer is etched to form a movable membrane over said MEMS cavity and to remove said membrane layer over said top side substrate contact area. The thin dielectric region is removed from over said top side substrate contact area. A top side metal layer is formed including a trace portion coupling said top side substrate contact area to said movable membrane. From a bottom side surface of said first substrate, etching is performed to open an isolation trench around said single crystal material to form a through-substrate via (TSV) plug of said single crystal material at least under said top side substrate contact area which is electrically isolated from surrounding regions of said single crystal material.
摘要翻译：形成包括至少一个具有至少一个CMUT单元的CMUT元件的电容式微加工超声波传感器（CMUT）装置。在单晶材料基板的上侧形成有包含厚而薄的电介质区域的图案化电介质层。第二衬底被结合到厚电介质区域以提供至少一个密封的微机电系统（MEMS）空腔。第二衬底被薄化以减小所述第二衬底的厚度以提供膜层。蚀刻膜层以在所述MEMS空腔上形成可移动膜，并且在所述顶侧基板接触区域上去除所述膜层。从所述顶侧基板接触区域的上方去除薄介电区域。形成顶侧金属层，其包括将所述顶侧基板接触区域连接到所述可动膜的迹线部分。从所述第一衬底的底侧表面进行蚀刻以打开围绕所述单晶材料的隔离沟槽，以至少在所述顶侧衬底接触区域的下方形成所述单晶材料的贯穿衬底通孔（TSV）插头与所述单晶材料的周围区域电隔离。

43. 发明申请

US20160181041A1 MEMS STRUCTURE WITH THICK MOVABLE MEMBRANE 审中-公开
标题翻译：具有厚度可移动膜的MEMS结构
公开(公告)号：US20160181041A1
公开(公告)日：2016-06-23
申请号：US14977488
申请日：2015-12-21
申请人： DELFMEMS SAS
发明人： Anne-Sophie Rollier , Antoine Bonnabel , Karim Segueni
IPC分类号： H01H59/00 , B81B3/00 , H01H49/00 , B81C1/00
CPC分类号： H01H59/0009 , B81B3/0051 , B81B2201/018 , B81B2203/0127 , B81C1/00158 , B81C2201/013 , H01H49/00 , H01H2059/0027 , H01H2059/0036 , H01H2227/004
摘要： The present invention relates to a method of manufacturing an MEMS device that comprises the steps of forming a first membrane layer over a sacrificial base layer, forming a second membrane layer over the first membrane layer, wherein the second membrane layer comprises lateral recesses exposing lateral portions of the first membrane layer and forming stoppers to restrict movement of the first membrane layer. Moreover, it is provided MEMS device comprising a movable membrane comprising a first membrane layer and a second membrane layer formed over the first membrane layer, wherein the second membrane layer comprises lateral recesses exposing lateral portions of the first membrane layer.
摘要翻译：本发明涉及一种制造MEMS器件的方法，该方法包括以下步骤：在牺牲基底层上形成第一膜层，在第一膜层上形成第二膜层，其中第二膜层包括暴露侧向部分的第一膜层并形成止挡件以限制第一膜层的运动。此外，提供了包括可移动膜的MEMS装置，其包括形成在第一膜层上的第一膜层和第二膜层，其中第二膜层包括暴露第一膜层侧向部分的侧向凹部。

44. 发明申请

US20160055282A1 PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 有权
公开(公告)号：US20160055282A1
公开(公告)日：2016-02-25
申请号：US14840422
申请日：2015-08-31
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Russell T. HERRIN , Jeffrey C. MALING , Anthony K. STAMPER
IPC分类号： G06F17/50
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

45. 发明授权

US09260295B2 MEMS integrated pressure sensor devices having isotropic cavities and methods of forming same 有权
标题翻译：具有各向同性空腔的MEMS集成压力传感器装置及其形成方法
公开(公告)号：US09260295B2
公开(公告)日：2016-02-16
申请号：US14331495
申请日：2014-07-15
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chia-Hua Chu , Chun-Wen Cheng
IPC分类号： B81B7/00 , B81C1/00 , B81B7/02 , H01L23/00 , H01L23/10 , H01L25/00
CPC分类号： B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2201/025 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00182 , B81C1/00238 , B81C2201/013 , B81C2201/019 , B81C2203/0118 , B81C2203/0792 , H01L23/10 , H01L24/29 , H01L24/32 , H01L24/83 , H01L25/50 , H01L2224/29011 , H01L2224/29013 , H01L2224/291 , H01L2224/29124 , H01L2224/29144 , H01L2224/32145 , H01L2224/83193 , H01L2224/83805 , H01L2924/01322 , H01L2924/1461 , H01L2224/3012 , H01L2924/00012 , H01L2924/01029 , H01L2924/00
摘要： A method embodiment includes providing a MEMS wafer comprising an oxide layer, a MEMS substrate, a polysilicon layer. A carrier wafer comprising a first cavity formed using isotropic etching is bonded to the MEMS, wherein the first cavity is aligned with an exposed first portion of the polysilicon layer. The MEMS substrate is patterned, and portions of the sacrificial oxide layer are removed to form a first and second MEMS structure. A cap wafer including a second cavity is bonded to the MEMS wafer, wherein the bonding creates a first sealed cavity including the second cavity aligned to the first MEMS structure, and wherein the second MEMS structure is disposed between a second portion of the polysilicon layer and the cap wafer. Portions of the carrier wafer are removed so that first cavity acts as a channel to ambient pressure for the first MEMS structure.
摘要翻译：方法实施例包括提供包括氧化物层，MEMS衬底，多晶硅层的MEMS晶片。包括使用各向同性蚀刻形成的第一空腔的载体晶片被结合到MEMS，其中第一空腔与多晶硅层的暴露的第一部分对准。图案化MEMS衬底，并且去除牺牲氧化物层的部分以形成第一和第二MEMS结构。包括第二腔的盖晶片被结合到MEMS晶片，其中所述接合产生包括与所述第一MEMS结构对准的所述第二腔的第一密封腔，并且其中所述第二MEMS结构设置在所述多晶硅层的第二部分和盖晶圆。去除载体晶片的部分，使得第一腔作为第一MEMS结构的环境压力的通道。

46. 发明申请

US20150345196A1 MEMS HINGES WITH ENHANCED ROTATABILITY 审中-公开
标题翻译：具有增强可旋转性的MEMS铰链
公开(公告)号：US20150345196A1
公开(公告)日：2015-12-03
申请号：US14825213
申请日：2015-08-13
申请人： Raviv Erlich , Yuval Gerson
发明人： Raviv Erlich , Yuval Gerson
IPC分类号： E05D7/00 , B81C1/00 , B81B3/00 , E05D11/00 , E05D1/02
CPC分类号： F16C11/12 , B81B3/0043 , B81B2201/0235 , B81B2201/034 , B81B2201/042 , B81B2203/0118 , B81B2203/0163 , B81C1/0015 , B81C1/00198 , B81C1/00523 , B81C2201/013 , E05D1/02 , E05D7/00 , E05D11/0081 , F16F1/48 , F16F2224/025 , F16F2226/00 , F16F2226/042 , G01C19/02 , G01P15/09 , G01P15/093 , G01P15/125 , G02B26/0833 , G02B26/105 , Y10T16/522 , Y10T16/525 , Y10T29/24 , Y10T29/25
摘要： A mechanical device includes a long, narrow element made of a rigid, elastic material. A rigid frame is configured to anchor at least one end of the element, which is attached to the frame, and to define a gap running longitudinally along the element between the beam and the frame, so that the element is free to move within the gap. A solid filler material, different from the rigid, elastic material, fills at least a part of the gap between the element and the frame so as to permit a first mode of movement of the element within the gap while inhibiting a different, second mode of movement.
摘要翻译：机械装置包括由刚性弹性材料制成的长而窄的元件。刚性框架构造成锚固附接到框架的元件的至少一个端部并且限定沿着梁和框架之间的元件纵向延伸的间隙，使得元件在间隙内自由移动。与刚性的弹性材料不同的固体填充材料填充元件和框架之间的间隙的至少一部分，以便允许元件在间隙内的第一移动模式，同时抑制不同的第二模式运动。

47. 发明申请

US20150210542A1 MEMS Device with Polymer Layer, System of a MEMS Device with a Polymer Layer, Method of Making a MEMS Device with a Polymer Layer 审中-公开
标题翻译：具有聚合物层的MEMS器件，具有聚合物层的MEMS器件的系统，制备具有聚合物层的MEMS器件的方法
公开(公告)号：US20150210542A1
公开(公告)日：2015-07-30
申请号：US14684700
申请日：2015-04-13
申请人： INFINEON TECHNOLOGIES AG
发明人： Alfons Dehe
IPC分类号： B81C1/00
CPC分类号： B81C1/00325 , B81B3/0072 , B81B2201/0257 , B81C1/00158 , B81C1/00182 , B81C2201/013 , B81C2201/0159 , B81C2201/0198
摘要： A MEMS device, a method of making a MEMS device and a system of a MEMS device are shown. In one embodiment, a MEMS device includes a first polymer layer, a MEMS substrate disposed on the first polymer layer and a MEMS structure supported by the MEMS substrate. The MEMS device further includes a first opening disposed in the MEMS substrate and a second opening disposed in the first polymer layer.
摘要翻译：示出了MEMS器件，制造MEMS器件的方法和MEMS器件的系统。在一个实施例中，MEMS器件包括第一聚合物层，设置在第一聚合物层上的MEMS衬底和由MEMS衬底支撑的MEMS结构。 MEMS器件还包括设置在MEMS衬底中的第一开口和设置在第一聚合物层中的第二开口。

48. 发明授权

US09040334B2 MEMS integrated pressure sensor devices and methods of forming same 有权
标题翻译： MEMS集成式压力传感器装置及其形成方法
公开(公告)号：US09040334B2
公开(公告)日：2015-05-26
申请号：US13894821
申请日：2013-05-15
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chia-Hua Chu , Chun-Wen Cheng
IPC分类号： H01L21/00 , B81C1/00 , B81B3/00
CPC分类号： B81C1/00293 , B81B3/0021 , B81B7/0041 , B81B7/007 , B81B7/02 , B81B7/04 , B81B2201/0235 , B81B2201/0242 , B81B2201/025 , B81B2201/0264 , B81C1/00134 , B81C1/00309 , B81C2201/013 , B81C2203/0118 , G01C19/56 , G01C19/5769 , G01L9/0044 , G01L19/0076 , G01L19/0092 , G01P15/00 , G01P15/0802 , G01P15/125
摘要： A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment.
摘要翻译：方法实施例包括提供包括具有第一和第二部分的多晶硅层的微机电（MEMS）晶片。载体晶片结合到MEMS晶片的第一表面。粘合载体晶片产生第一腔。多晶硅层的第一部分的第一表面暴露于第一腔的压力水平。帽晶片结合到MEMS晶片的与MEMS晶片的第一表面相对的第二表面。接合盖晶片产生包括多晶硅层的第二部分和第三腔的第二腔。多晶硅层的第一部分的第二表面暴露于第三腔的压力水平。第一腔或第三腔暴露于周围环境。

49. 发明申请

US20150041932A1 PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 审中-公开
标题翻译：平面CAVITY MEMS及相关结构，制造方法和设计结构
公开(公告)号：US20150041932A1
公开(公告)日：2015-02-12
申请号：US14515681
申请日：2014-10-16
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Russell T. HERRIN , Christopher V. JAHNES , Anthony K. STAMPER , Eric J. WHITE
IPC分类号： B81B3/00
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a wiring layer and substrate. The method further includes forming an insulator layer over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity of the MEMS.
摘要翻译：形成至少一个微机电系统（MEMS）空腔的方法包括在布线层和基板上形成第一牺牲腔层。该方法还包括在第一牺牲腔层上形成绝缘体层。该方法还包括在绝缘体层上执行反向镶嵌回蚀工艺。该方法还包括平坦化绝缘体层和第一牺牲腔层。该方法还包括将第一牺牲腔层排出或剥离到用于MEMS的第一腔的平坦表面。

50. 发明申请

US20140326702A1 METHOD OF MANUFACTURING BASE BODY HAVING MICROSCOPIC HOLE, AND BASE BODY 审中-公开
标题翻译：具有微孔孔和基体的制备基体的方法
公开(公告)号：US20140326702A1
公开(公告)日：2014-11-06
申请号：US14331957
申请日：2014-07-15
申请人： Osamu NUKAGA , Satoshi YAMAMOTO , Kazuhito TABATA , Masakazu SUGIYAMA
发明人： Osamu NUKAGA , Satoshi YAMAMOTO , Kazuhito TABATA , Masakazu SUGIYAMA
IPC分类号： B81C1/00 , B23K26/00
CPC分类号： B81C1/00547 , B23K26/50 , B32B3/266 , B81B2201/0214 , B81B2201/058 , B81B2203/0353 , B81C1/00507 , B81C2201/013 , B81C2201/0143 , C03C15/00 , C03C23/0025 , Y10T428/24273
摘要： A method of manufacturing a base body having a microscopic hole, includes: forming at least one of a first modified region and a second modified region by scanning inside of a base body with a focal point of a first laser light having a pulse duration on order of picoseconds or less; forming a periodic modified group formed of a plurality of third modified regions and fourth modified regions by scanning an inside of the base body with a focal point of a second laser light having a pulse duration on order of picoseconds or less; obtaining the base body which is formed so that the first modified region and the second modified region overlap or come into contact with the modified group; and forming a microscopic hole by removing the first modified region and the third modified regions by etching.
摘要翻译：一种制造具有微小孔的基体的方法，包括：通过用具有脉冲持续时间的第一激光的焦点在基体上扫描来形成第一改质区域和第二改质区域中的至少一个皮秒或更少; 通过用脉冲持续时间为皮秒或更小的第二激光的焦点扫描基体的内部，形成由多个第三改质区域和第四改质区域形成的周期性修饰基团; 获得形成为使得第一改质区域和第二改质区域与改性基团重叠或接触的基体; 并通过蚀刻去除第一改质区和第三改质区而形成微孔。

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