专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20140326702A1 METHOD OF MANUFACTURING BASE BODY HAVING MICROSCOPIC HOLE, AND BASE BODY 审中-公开
标题翻译：具有微孔孔和基体的制备基体的方法
公开(公告)号：US20140326702A1
公开(公告)日：2014-11-06
申请号：US14331957
申请日：2014-07-15
申请人： Osamu NUKAGA , Satoshi YAMAMOTO , Kazuhito TABATA , Masakazu SUGIYAMA
发明人： Osamu NUKAGA , Satoshi YAMAMOTO , Kazuhito TABATA , Masakazu SUGIYAMA
IPC分类号： B81C1/00 , B23K26/00
CPC分类号： B81C1/00547 , B23K26/50 , B32B3/266 , B81B2201/0214 , B81B2201/058 , B81B2203/0353 , B81C1/00507 , B81C2201/013 , B81C2201/0143 , C03C15/00 , C03C23/0025 , Y10T428/24273
摘要： A method of manufacturing a base body having a microscopic hole, includes: forming at least one of a first modified region and a second modified region by scanning inside of a base body with a focal point of a first laser light having a pulse duration on order of picoseconds or less; forming a periodic modified group formed of a plurality of third modified regions and fourth modified regions by scanning an inside of the base body with a focal point of a second laser light having a pulse duration on order of picoseconds or less; obtaining the base body which is formed so that the first modified region and the second modified region overlap or come into contact with the modified group; and forming a microscopic hole by removing the first modified region and the third modified regions by etching.
摘要翻译：一种制造具有微小孔的基体的方法，包括：通过用具有脉冲持续时间的第一激光的焦点在基体上扫描来形成第一改质区域和第二改质区域中的至少一个皮秒或更少; 通过用脉冲持续时间为皮秒或更小的第二激光的焦点扫描基体的内部，形成由多个第三改质区域和第四改质区域形成的周期性修饰基团; 获得形成为使得第一改质区域和第二改质区域与改性基团重叠或接触的基体; 并通过蚀刻去除第一改质区和第三改质区而形成微孔。

2. 发明申请

US20120295066A1 SURFACE NANOSTRUCTURE FORMING METHOD AND BASE HAVING SURFACE NANOSTRUCTURE 审中-公开
标题翻译：表面纳米结构形成方法和具有表面纳米结构的基底
公开(公告)号：US20120295066A1
公开(公告)日：2012-11-22
申请号：US13566679
申请日：2012-08-03
申请人： Osamu NUKAGA , Satoshi YAMAMOTO , Seiji SAMUKAWA , Masakazu SUGIYAMA
发明人： Osamu NUKAGA , Satoshi YAMAMOTO , Seiji SAMUKAWA , Masakazu SUGIYAMA
IPC分类号： B29C59/16 , B32B3/30 , B82Y40/00 , B82Y30/00
CPC分类号： C03C23/0025 , B23K26/0624 , B23K26/361 , Y10T428/24479
摘要： A surface nanostructure forming method includes: preparing a substrate having an appropriate processing value; a first process of irradiating a part which is close to a surface of the substrate with laser light having a pulse duration of picosecond order or shorter at an irradiation intensity being close to the appropriate processing value of the substrate, or greater than or equal to the appropriate processing value and less than or equal to an ablation threshold and forming periodic nanostructures in which first modified portions and second modified portions are periodically arranged in a self-assembled manner at a focus at which the laser light is concentrated and in a region being close to the focus; and a second process of performing an etching treatment on the surface of the substrate having the periodic nanostructures formed thereon to form an uneven structure having the first modified portions as valleys.
摘要翻译：表面纳米结构形成方法包括：制备具有适当处理值的基材; 或者在接近基板的适当处理值的照射强度下用脉冲持续时间为皮秒级或更短的激光照射靠近基板的表面的部分的第一工序，或大于或等于适当的处理值并小于或等于烧蚀阈值并形成周期性纳米结构，其中第一改性部分和第二修饰部分以激光聚焦的焦点周期性地以自组装的方式布置，并且在紧密的区域中重点; 以及对其上形成有周期性纳米结构的基板的表面进行蚀刻处理以形成具有第一改性部分作为凹谷的凹凸结构的第二工艺。

3. 发明申请

US20120308765A1 NANOSTRUCTURE FORMING METHOD AND BASE HAVING NANOSTRUCTURE 审中-公开
标题翻译：具有纳米结构的纳米结构形成方法和基础
公开(公告)号：US20120308765A1
公开(公告)日：2012-12-06
申请号：US13566092
申请日：2012-08-03
申请人： Osamu NUKAGA , Seiji SAMUKAWA , Masakazu SUGIYAMA
发明人： Osamu NUKAGA , Seiji SAMUKAWA , Masakazu SUGIYAMA
IPC分类号： B44C1/22 , B32B3/00
CPC分类号： B23K26/0624 , B23K26/0006 , B23K26/384 , B23K26/389 , B23K26/40 , B23K26/53 , B23K26/55 , B23K2103/50 , H01L21/30604 , H01L21/30608 , H01L21/3065 , Y10T428/24
摘要： A nanostructure forming method includes: preparing a substrate having an appropriate processing value; applying laser beam having a pulse duration of picosecond order or less to a planar surface oriented in a propagation direction of the laser beam and a direction perpendicular to a polarization direction (electric field direction) of the laser beam in the interior of the substrate at an irradiation intensity which is close to the appropriate processing value of the substrate; forming a structure-modified portion at a focus at which the laser beam is concentrated and in a region which is close to the focus; and forming a nanostructure formed of a nano-hole by selectively etching the structure-modified portion.
摘要翻译：纳米结构形成方法包括：制备具有适当处理值的基材; 对于在激光束的传播方向上定向的平面表面和垂直于基板内部的激光束的偏振方向（电场方向）的方向，施加具有皮秒级或更小脉冲持续时间的激光束，接近基板的适当处理值的照射强度; 在激光束集中的焦点处和在靠近焦点的区域中形成结构改性部分; 以及通过选择性地蚀刻所述结构改性部分，形成由纳米孔形成的纳米结构。

4. 发明申请

US20110129999A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20110129999A1
公开(公告)日：2011-06-02
申请号：US13020534
申请日：2011-02-03
申请人： Osamu NUKAGA , Satoshi YAMAMOTO
发明人： Osamu NUKAGA , Satoshi YAMAMOTO
IPC分类号： H01L21/441
CPC分类号： H01L21/76898 , H01L21/76831
摘要： Provided is a method for manufacturing a semiconductor device including: an electrode formation step of forming an electrode on one surface of a semiconductor substrate; a through hole formation step of forming a through hole starting from a position on the other surface corresponding to the position of the electrode; a first insulating layer formation step of forming a first insulating layer on at least an inner circumferential surface, a periphery of an opening, and a bottom surface of the through hole; a modifying step of reforming a first portion of the first insulating layer formed on the bottom surface of the through hole; a modified region removal step of removing the modified region; and a conductive layer formation step of forming a conductive layer on the electrode exposed inside the through hole and on the first insulating layer such that the conductive layer is electrically connected with the electrode.
摘要翻译：提供一种半导体器件的制造方法，包括：电极形成步骤，在半导体衬底的一个表面上形成电极; 通孔形成步骤，从对应于电极位置的另一表面的位置开始形成通孔; 第一绝缘层形成步骤，在至少内周面，开口周边和通孔的底面上形成第一绝缘层; 改性步骤，对形成在通孔底面上的第一绝缘层的第一部分进行重整; 修改区域去除步骤，去除修饰区域; 以及导电层形成步骤，在暴露在通孔内部的电极和第一绝缘层上形成导电层，使得导电层与电极电连接。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式