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41. 发明申请

US20150360939A1 METHOD OF INCREASING MEMS ENCLOSURE PRESSURE USING OUTGASSING MATERIAL 有权
标题翻译：使用外加材料增加MEMS外壳压力的方法
公开(公告)号：US20150360939A1
公开(公告)日：2015-12-17
申请号：US14832786
申请日：2015-08-21
申请人： InvenSense, Inc.
发明人： Cerina Zhang , Martin Lim , Jongwoo Shin , Joseph Seeger
IPC分类号： B81C1/00
CPC分类号： B81C1/00301 , B81B7/007 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81C1/0023 , B81C1/00238 , B81C1/00246 , B81C1/00269 , B81C2201/0104 , B81C2201/0132 , B81C2203/0145 , B81C2203/019 , B81C2203/035 , B81C2203/0792
摘要： Semiconductor manufacturing processes include providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer; the second passivation layer has a top surface. The processes further include forming an opening in a first portion of the second passivation layer, and the opening exposes a portion of a surface of the first passivation layer. The processes further include patterning the second and first passivation layers to expose portions of the patterned top-level metal layer and bonding a second substrate and the first substrate to each other. The bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing.
摘要翻译：半导体制造工艺包括提供第一衬底，其具有设置在图案化顶层金属层上方的第一钝化层，并且还具有设置在第一钝化层上的第二钝化层; 第二钝化层具有顶表面。所述方法还包括在第二钝化层的第一部分中形成开口，并且开口暴露第一钝化层的表面的一部分。所述方法还包括图案化第二钝化层和第一钝化层以暴露图案化顶层金属层的部分并将第二基板和第一基板彼此接合。接合发生在至少第一钝化层的暴露部分经历脱气的温度范围内。

42. 发明申请

US20150344296A1 ENCAPSULATED COMPONENT COMPRISING A MEMS COMPONENT AND METHOD FOR THE PRODUCTION THEREOF 有权
标题翻译：包含MEMS组件的封装组件及其生产方法
公开(公告)号：US20150344296A1
公开(公告)日：2015-12-03
申请号：US14759602
申请日：2013-10-23
申请人： EPCOS AG
发明人： Wolfgang Pahl
IPC分类号： B81B7/00 , H04R23/00 , B81C1/00
CPC分类号： B81B7/0058 , B81B7/0054 , B81B7/0061 , B81B7/007 , B81B2201/0257 , B81B2201/0264 , B81B2207/012 , B81C1/0023 , B81C1/00301 , B81C3/001 , B81C2201/034 , B81C2203/0154 , H01L2224/32145 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48471 , H01L2224/48472 , H01L2924/1461 , H01L2924/19107 , H04R23/00 , H04R2201/003 , H01L2924/00014 , H01L2924/00
摘要： A component comprising a carrier, a chip component and a MEMS component is proposed, wherein the mechanically sensitive MEMS component is mounted below a half-shell on the carrier. The component is encapsulated with a molding compound in a transfer molding process.
摘要翻译：提出了包括载体，芯片部件和MEMS部件的部件，其中机械敏感的MEMS部件安装在载体上的半壳下方。该组分在传递模塑过程中用模塑料封装。

43. 发明授权

US09193583B2 Low-temperature wafer level processing for MEMS devices 有权
标题翻译： MEMS器件的低温晶圆级处理
公开(公告)号：US09193583B2
公开(公告)日：2015-11-24
申请号：US13661264
申请日：2012-10-26
申请人： The Royal Institution for the Advancement of Learning / McGill University
发明人： Mourad El-Gamal , Dominique Lemoine , Paul-Vahe Cicek , Frederic Nabki
IPC分类号： H01L21/768 , B81C1/00 , G01L9/00 , H01L23/48 , H03H3/007 , H03H9/10 , H01L21/02
CPC分类号： B81C1/00301 , G01L9/0042 , H01L21/02697 , H01L21/76898 , H01L23/481 , H01L2224/0401 , H01L2224/0557 , H01L2224/13009 , H01L2224/13021 , H01L2224/13023 , H01L2224/131 , H01L2924/00014 , H01L2924/0002 , H01L2924/12044 , H01L2924/1461 , H03H3/007 , H03H9/10 , H01L2924/014 , H01L2924/00 , H01L2224/05552
摘要： It would be beneficial to integrate MEMS devices with silicon CMOS electronics, package them in controlled environments, e.g. vacuum for MEMS resonators, and provide industry standard electrical interconnections such as solder bumps. However, to do so requires through-wafer via-based electrical interconnections. However, the fragile nature of the MEMS devices, the requirement for vacuum, hermetic sealing, and the stresses placed on metallization membranes are not present in conventional CMOS packaging. Accordingly there is provided a means of reinforcing through-wafer vias for integrated MEMS-CMOS circuits by in-filling the through-wafer electrical vias with low temperature deposited ceramic materials deposited with processes compatible with post-processing of CMOS electronics. Beneficially ceramics such as silicon carbide provide enhanced mechanical strength, enhanced expansion matching, and increased thermal conductivity in comparison to silicon and solder materials. The ceramic reinforcing may be further adapted to include micro-channels for the provisioning of liquid cooling through the structures.
摘要翻译：将MEMS器件与硅CMOS电子器件集成在一起，将其封装在受控环境（例如，用于MEMS谐振器的真空，并提供诸如焊料凸块的工业标准电互连。然而，要做到这一点，需要通过晶片通孔的电互连。然而，传统的CMOS封装中不存在MEMS器件的脆弱性质，对真空，气密密封以及置于金属化膜上的应力的要求。因此，提供了一种通过用与CMOS电子器件的后处理相兼容的工艺沉积的低温沉积陶瓷材料填充贯通晶片电气通孔来加强用于集成MEMS-CMOS电路的通孔的通孔。与硅和焊料相比，有利的陶瓷如碳化硅提供增强的机械强度，增强的膨胀匹配和增加的热导率。陶瓷增强件还可以适于包括用于通过结构提供液体冷却的微通道。

44. 发明申请

US20150323657A1 PRODUCTION METHOD FOR ULTRASONIC PROBE, ULTRASONIC PROBE, AND ULTRASONIC DIAGNOSIS DEVICE 有权
标题翻译：超声波探头，超声波探头和超声波诊断装置的生产方法
公开(公告)号：US20150323657A1
公开(公告)日：2015-11-12
申请号：US14652039
申请日：2013-11-29
申请人： HITACHI ALOKA MEDICAL, LTD.
发明人： Shuntaro MACHIDA , Akifumi SAKO , Taiichi TAKEZAKI , Yasuhiro YOSHIMURA , Tatsuya NAGATA , Naoaki YAMASHITA , Hiroki TANAKA
IPC分类号： G01S7/52 , B81C1/00 , A61B8/00
CPC分类号： G01S7/52079 , A61B8/4444 , A61B8/4494 , A61B8/54 , B06B1/0292 , B81C1/00301 , G01S15/8915
摘要： Both controlling damage when assembling an ultrasonic probe using a chip formed with a capacitive ultrasonic transducer and securing operational reliability are achieved. In a semiconductor substrate on which the capacitive ultrasonic transducer (CMUT) is formed on a first primary surface, a protective film is formed on the surface of the ultrasonic transducer which is formed on the first primary surface of the semiconductor substrate which is then thinned by polishing a second primary surface opposite to the first primary surface of the semiconductor substrate, an ultrasonic transducer chip is cutout of the semiconductor substrate, a sound absorbing material is provided on the surface opposite to the surface formed with the ultrasonic transducer, and the protective film formed on the surface of the ultrasonic transducer is removed.
摘要翻译：在使用形成有电容式超声波换能器的芯片组装超声波探头并确保操作可靠性时，都可以控制损坏。在电容式超声波换能器（CMUT）形成在第一主面上的半导体基板中，形成在半导体基板的第一主面上的超声波振子的表面上形成保护膜，然后将该保护膜变薄抛光与半导体衬底的第一主表面相对的第二主表面，超声波换能器芯片是半导体衬底的切口，在与形成有超声波换能器的表面相对的表面上设置吸声材料，并且保护膜形成在超声换能器的表面上被去除。

45. 发明申请

US20150299509A1 THERMALLY DECOMPOSABLE POLYMER COMPOSITIONS FOR FORMING MICROELECTRONIC ASSEMBLIES 有权
标题翻译：用于形成微电子组件的热分解聚合物组合物
公开(公告)号：US20150299509A1
公开(公告)日：2015-10-22
申请号：US14647330
申请日：2013-12-12
申请人： PROMERUS LLC
发明人： W. C. PETER TSANG , ANDREW BELL , HONGSHI ZHEN , KEITARO SETO
IPC分类号： C09D167/02 , B81C1/00
CPC分类号： B23K35/3618 , B23K35/0244 , B23K35/025 , B23K35/0255 , B23K35/36 , B23K35/3612 , B23K35/3613 , B81C1/00301 , B81C1/00317 , B81C2201/019 , C09D167/02 , H05K3/3489 , H05K2203/0485
摘要： Embodiments in accordance with the present invention relate generally to polymer compositions useful in the forming of microelectronic assemblies, and more specifically to such compositions that encompass a thermally decomposable polymer and that provide both tackiness and solder fluxing.
摘要翻译：根据本发明的实施方案一般涉及可用于形成微电子组件的聚合物组合物，更具体地涉及包含可热分解聚合物并且提供粘性和助焊剂的这种组合物。

46. 发明申请

US20150266719A1 MEMS DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： MEMS器件及其制造方法
公开(公告)号：US20150266719A1
公开(公告)日：2015-09-24
申请号：US14642031
申请日：2015-03-09
申请人： SEIKO EPSON CORPORATION
发明人： Takahiko YOSHIZAWA
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/007 , B81B2207/092 , B81B2207/095 , B81C1/00246 , B81C1/00301 , B81C2203/0728 , B81C2203/0764 , H01L2224/24145
摘要： A present MEMS device includes: a semiconductor substrate in which a trench is formed; a functional element that is provided in the trench of the semiconductor substrate and includes a connection electrode; a structural member that forms a cavity surrounding the functional element; a lid portion that includes a conductive member electrically connected to the connection electrode and covers the cavity; an insulating layer that covers the main surface of the semiconductor substrate provided with the lid portion and a semiconductor circuit element; a first electrode that penetrates the insulating layer and is electrically connected to the conductive member; a second electrode that penetrates the insulating layer and is electrically connected to the semiconductor circuit element; and wiring that is provided on a surface of the insulating layer and brings the first electrode and the second electrode into electrical connection to each other.
摘要翻译：本MEMS装置包括：形成沟槽的半导体衬底; 设置在所述半导体衬底的沟槽中并包括连接电极的功能元件; 形成围绕所述功能元件的空腔的结构构件; 盖部分，包括电连接到连接电极并覆盖空腔的导电部件; 覆盖设置有盖部的半导体基板的主表面的绝缘层和半导体电路元件; 第一电极，其穿透绝缘层并电连接到导电构件; 穿过绝缘层并与半导体电路元件电连接的第二电极; 以及设置在绝缘层的表面上并使第一电极和第二电极彼此电连接的布线。

47. 发明申请

US20150259194A1 Semiconductor Device and Method of Forming Microelectromechanical Systems (MEMS) Package 有权
标题翻译：半导体器件和形成微机电系统（MEMS）封装的方法
公开(公告)号：US20150259194A1
公开(公告)日：2015-09-17
申请号：US14643074
申请日：2015-03-10
申请人： STATS ChipPAC, LTD.
发明人： Yaojian Lin , Won Kyoung Choi , Kang Chen , Ivan Micallef
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/007 , B81C1/0023 , B81C1/00301 , B81C1/00904 , H01L21/561 , H01L21/568 , H01L23/5389 , H01L23/552 , H01L24/16 , H01L24/19 , H01L24/81 , H01L24/96 , H01L24/97 , H01L25/105 , H01L25/50 , H01L2224/03 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/12105 , H01L2224/131 , H01L2224/16227 , H01L2224/16237 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48235 , H01L2224/73265 , H01L2224/73267 , H01L2224/81005 , H01L2224/81191 , H01L2224/81815 , H01L2224/94 , H01L2224/97 , H01L2225/1035 , H01L2225/1058 , H01L2924/13091 , H01L2924/15 , H01L2924/15311 , H01L2924/16251 , H01L2924/181 , H01L2924/18162 , H01L2924/3511 , H01L2224/11 , H01L2224/81 , H01L2924/00012 , H01L2224/83 , H01L2224/85 , H01L2924/00 , H01L2924/00014 , H01L2924/014
摘要： A semiconductor device has a first semiconductor die and a modular interconnect structure adjacent to the first semiconductor die. An encapsulant is deposited over the first semiconductor die and modular interconnect structure as a reconstituted panel. An interconnect structure is formed over the first semiconductor die and modular interconnect structure. An active area of the first semiconductor die remains devoid of the interconnect structure. A second semiconductor die is mounted over the first semiconductor die with an active surface of the second semiconductor die oriented toward an active surface of the first semiconductor die. The reconstituted panel is singulated before or after mounting the second semiconductor die. The first or second semiconductor die includes a microelectromechanical system (MEMS). The second semiconductor die includes an encapsulant and an interconnect structure formed over the second semiconductor die. Alternatively, the second semiconductor die is mounted to an interposer disposed over the interconnect structure.
摘要翻译：半导体器件具有与第一半导体管芯相邻的第一半导体管芯和模块化互连结构。密封剂沉积在第一半导体管芯和模块化互连结构上，作为重构面板。互连结构形成在第一半导体管芯和模块互连结构之上。第一半导体管芯的有源区域没有互连结构。第二半导体管芯安装在第一半导体管芯上，第二半导体管芯的有源表面朝向第一半导体管芯的有效表面。复原的面板在安装第二半导体管芯之前或之后被分割。第一或第二半导体管芯包括微机电系统（MEMS）。第二半导体管芯包括密封剂和形成在第二半导体管芯上的互连结构。或者，第二半导体管芯安装到设置在互连结构上的插入器。

48. 发明申请

US20150255372A1 THROUGH-SILICON VIA (TSV)-BASED DEVICES AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS 有权
标题翻译：通过硅胶（TSV）设备和相关技术和配置
公开(公告)号：US20150255372A1
公开(公告)日：2015-09-10
申请号：US14203415
申请日：2014-03-10
申请人： Telesphor Kamgaing
发明人： Telesphor Kamgaing
IPC分类号： H01L23/48 , H01L49/02 , B81B7/00 , H01L21/768
CPC分类号： H01L23/481 , B81B2201/0271 , B81B2207/096 , B81C1/00246 , B81C1/00301 , H01L23/5228 , H01L23/642 , H01L23/647 , H01L25/0657 , H01L27/0694 , H01L28/20 , H01L28/60 , H01L2224/16225 , H01L2225/06513 , H01L2225/06517 , H01L2225/06527 , H01L2225/06544 , H01L2924/15311
摘要： Embodiments of the present disclosure are directed toward through-silicon via (TSV)-based devices and associated techniques and configurations. In one embodiment, an apparatus includes a die having active circuitry disposed on a first side of the die and a second side disposed opposite to the first side, a bulk semiconductor material disposed between the first side and the second side of the die and a device including one or more of a capacitor, resistor or resonator disposed in the bulk semiconductor material, the capacitor, resistor or resonator including one or more TSV structures that extend through the bulk semiconductor material, an electrically insulative material disposed in the one or more TSV structures and an electrode material or resistor material in contact with the electrically insulative material within the one or more TSV structures.
摘要翻译：本公开的实施例涉及基于硅通孔（TSV）的器件及相关技术和配置。在一个实施例中，一种装置包括具有设置在管芯的第一侧上的有源电路和与第一侧相对设置的第二侧的管芯，设置在管芯的第一侧和第二侧之间的体半导体材料，包括设置在体半导体材料中的电容器，电阻器或谐振器中的一个或多个，包括延伸穿过体半导体材料的一个或多个TSV结构的电容器，电阻器或谐振器，设置在一个或多个TSV结构中的电绝缘材料以及与一个或多个TSV结构内的电绝缘材料接触的电极材料或电阻材料。

49. 发明申请

US20150251896A1 COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME 有权
标题翻译：补充金属氧化物半导体（CMOS）超声波传感器及其形成方法
公开(公告)号：US20150251896A1
公开(公告)日：2015-09-10
申请号：US14711145
申请日：2015-05-13
申请人： Butterfly Network, Inc.
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
IPC分类号： B81B7/00
CPC分类号： B81C1/00301 , B06B1/02 , B06B1/0292 , B81B7/007 , B81C1/00134 , B81C1/00158 , B81C1/00246 , B81C2201/0195 , B81C2203/0735 , B81C2203/0771 , G01N29/2406 , H01L29/84 , H04R19/005
摘要： Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
摘要翻译：描述了互补金属氧化物半导体（CMOS）超声波换能器（CUT）以及用于形成CUT的方法。 CUT可以包括用于与换能器连接的单体集成超声换能器和集成电路。 CUT可用于超声波装置，例如超声成像装置和/或高强度聚焦超声（HIFU）装置。

50. 发明申请

US20150225229A1 MICROELECTROMECHANICAL SYSTEM DEVICES HAVING THROUGH SUBSTRATE VIAS AND METHODS FOR THE FABRICATION THEREOF 有权
标题翻译：具有基板VIAS的微电子仪器系统及其制造方法
公开(公告)号：US20150225229A1
公开(公告)日：2015-08-13
申请号：US14694908
申请日：2015-04-23
申请人： Lianjun Liu
发明人： Lianjun Liu
IPC分类号： B81B7/00
CPC分类号： B81B7/0006 , B81B7/007 , B81B2207/096 , B81C1/00301
摘要： Methods for the fabrication of a Microelectromechanical Systems (“MEMS”) devices are provided, as are MEMS devices. In one embodiment, the MEMS device fabrication method includes forming at least one via opening extending into a substrate wafer, depositing a body of electrically-conductive material over the substrate wafer and into the via opening to produce a via, bonding the substrate wafer to a transducer wafer having an electrically-conductive transducer layer, and forming an electrical connection between the via and the electrically-conductive transducer layer. The substrate wafer is thinned to reveal the via through a bottom surface of the substrate wafer, and a backside conductor is produced over a bottom surface of the substrate wafer electrically coupled to the via.
摘要翻译：提供了用于制造微机电系统（“MEMS”）器件的方法，MEMS器件也是如此。在一个实施例中，MEMS器件制造方法包括形成延伸到衬底晶片中的至少一个通孔开口，在衬底晶片上沉积导电材料体并进入通孔开口以产生通孔，将衬底晶片接合到换能器晶片具有导电换能器层，并且在通孔和导电换能器层之间形成电连接。衬底晶片被薄化以通过衬底晶片的底表面露出通孔，并且在衬底晶片的底表面上产生电气耦合到通孔的背面导体。

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