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    • 42. 发明申请
    • SUBSTRATE PROCESSING SYSTEM AND METHOD
    • 基板加工系统及方法
    • US20130115764A1
    • 2013-05-09
    • US13672652
    • 2012-11-08
    • Intevac, Inc.
    • Terry PedersonHenry HieslmairMoon ChunVinay PrabhakarBabak AdibiTerry Bluck
    • H01L21/677H01L21/265
    • H01L21/6833H01L21/26506H01L21/67745H01L21/6776H01L21/681H01L21/6831H01L31/1876H02N13/00Y02E10/50Y02P70/521
    • A system for processing substrates has a vacuum enclosure and a processing chamber situated to process wafers in a processing zone inside the vacuum enclosure. Two rail assemblies are provided, one on each side of the processing zone. Two chuck arrays ride, each on one of the rail assemblies, such that each is cantilevered on one rail assemblies and support a plurality of chucks. The rail assemblies are coupled to an elevation mechanism that places the rails in upper position for processing and at lower position for returning the chuck assemblies for loading new wafers. A pickup head assembly loads wafers from a conveyor onto the chuck assemblies. The pickup head has plurality of electrostatic chucks that pick up the wafers from the front side of the wafers. Cooling channels in the processing chucks are used to create air cushion to assist in aligning the wafers when delivered by the pickup head.
    • 用于处理衬底的系统具有真空外壳和位于处理真空外壳内的处理区中的晶片的处理室。 提供两个轨道组件,一个在处理区域的每一侧。 两个卡盘阵列,每个在一个导轨组件上,使得每个卡盘阵列悬挂在一个导轨组件上并支撑多个卡盘。 轨道组件联接到升降机构,其将轨道放置在用于处理的上部位置,并且在较低位置处返回用于装载新晶片的卡盘组件。 拾取头组件将晶片从传送器装载到卡盘组件上。 拾取头具有从晶片的前侧拾取晶片的多个静电卡盘。 处理卡盘中的冷却通道用于产生气垫,以在由拾取头传送时帮助对准晶片。
    • 50. 发明申请
    • PROCESS FOR OPTIMIZATION OF ISLAND TO TRENCH RATIO IN PATTERNED MEDIA
    • 优化岛屿以优化媒体比例的方法
    • US20100237042A1
    • 2010-09-23
    • US12730147
    • 2010-03-23
    • Houng T. NguyenRen XuMichael S. Barnes
    • Houng T. NguyenRen XuMichael S. Barnes
    • G11B5/84
    • G11B5/855
    • A sequence of process steps having balanced process times are implemented in sequence of etch chambers coupled linearly and isolated one from the other, resulting in the optimization of island to trench ratio for a patterned media. A biased chemical etching using active etching gas is used to descum and trim the resist patterns. An inert gas sputter etch is performed on the magnetic layers, resulting in the patterned magnetic layer on the disk. A final step of stripping is then performed to remove the residual capping resist and carbon hard mask on top of un-etched magnetic islands. The effective magnetic material remaining on the disk surface can be optimized by adjusting the conditions of chemical etch and sputter etch conditions. Relevant process conditions that may be adjusted include: pressure, bias, time, and the type of gas in each step.
    • 具有平衡处理时间的一系列工艺步骤以蚀刻室的顺序实现,该蚀刻室线性地并且彼此隔离,导致图案化介质的岛与沟槽比的优化。 使用有源蚀刻气体的偏压化学蚀刻来除去和修整抗蚀剂图案。 对磁性层进行惰性气体溅射蚀刻,得到盘上图案化的磁性层。 然后进行剥离的最后一步,以除去未蚀刻的磁岛顶部上的残余覆盖抗蚀剂和碳硬掩模。 可以通过调整化学蚀刻和溅射蚀刻条件的条件来优化残留在盘表面上的有效磁性材料。 可能调整的相关工艺条件包括:压力,偏压,时间和每一步中的气体类型。