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1. 发明申请

US20100237042A1 PROCESS FOR OPTIMIZATION OF ISLAND TO TRENCH RATIO IN PATTERNED MEDIA 失效
标题翻译：优化岛屿以优化媒体比例的方法
公开(公告)号：US20100237042A1
公开(公告)日：2010-09-23
申请号：US12730147
申请日：2010-03-23
申请人： Houng T. Nguyen , Ren Xu , Michael S. Barnes
发明人： Houng T. Nguyen , Ren Xu , Michael S. Barnes
IPC分类号： G11B5/84
CPC分类号： G11B5/855
摘要： A sequence of process steps having balanced process times are implemented in sequence of etch chambers coupled linearly and isolated one from the other, resulting in the optimization of island to trench ratio for a patterned media. A biased chemical etching using active etching gas is used to descum and trim the resist patterns. An inert gas sputter etch is performed on the magnetic layers, resulting in the patterned magnetic layer on the disk. A final step of stripping is then performed to remove the residual capping resist and carbon hard mask on top of un-etched magnetic islands. The effective magnetic material remaining on the disk surface can be optimized by adjusting the conditions of chemical etch and sputter etch conditions. Relevant process conditions that may be adjusted include: pressure, bias, time, and the type of gas in each step.
摘要翻译：具有平衡处理时间的一系列工艺步骤以蚀刻室的顺序实现，该蚀刻室线性地并且彼此隔离，导致图案化介质的岛与沟槽比的优化。使用有源蚀刻气体的偏压化学蚀刻来除去和修整抗蚀剂图案。对磁性层进行惰性气体溅射蚀刻，得到盘上图案化的磁性层。然后进行剥离的最后一步，以除去未蚀刻的磁岛顶部上的残余覆盖抗蚀剂和碳硬掩模。可以通过调整化学蚀刻和溅射蚀刻条件的条件来优化残留在盘表面上的有效磁性材料。可能调整的相关工艺条件包括：压力，偏压，时间和每一步中的气体类型。

2. 发明授权

US08715515B2 Process for optimization of island to trench ratio in patterned media 失效
标题翻译：在图案化介质中优化岛对沟比的方法
公开(公告)号：US08715515B2
公开(公告)日：2014-05-06
申请号：US12730147
申请日：2010-03-23
申请人： Houng T. Nguyen , Ren Xu , Michael S. Barnes
发明人： Houng T. Nguyen , Ren Xu , Michael S. Barnes
IPC分类号： B44C1/22
CPC分类号： G11B5/855
摘要： A sequence of process steps having balanced process times are implemented in sequence of etch chambers coupled linearly and isolated one from the other, resulting in the optimization of island to trench ratio for a patterned media. A biased chemical etching using active etching gas is used to descum and trim the resist patterns. An inert gas sputter etch is performed on the magnetic layers, resulting in the patterned magnetic layer on the disk. A final step of stripping is then performed to remove the residual capping resist and carbon hard mask on top of un-etched magnetic islands. The effective magnetic material remaining on the disk surface can be optimized by adjusting the conditions of chemical etch and sputter etch conditions. Relevant process conditions that may be adjusted include: pressure, bias, time, and the type of gas in each step.
摘要翻译：具有平衡处理时间的一系列工艺步骤以蚀刻室的顺序实现，该蚀刻室线性地并且彼此隔离，导致图案化介质的岛与沟槽比的优化。使用有源蚀刻气体的偏压化学蚀刻来除去和修整抗蚀剂图案。对磁性层进行惰性气体溅射蚀刻，得到盘上图案化的磁性层。然后进行剥离的最后一步，以除去未蚀刻的磁岛顶部上的残余覆盖抗蚀剂和碳硬掩模。可以通过调整化学蚀刻和溅射蚀刻条件的条件来优化残留在盘表面上的有效磁性材料。可能调整的相关工艺条件包括：压力，偏压，时间和每一步中的气体类型。

3. 发明申请

US20120090992A1 SYSTEM AND METHOD FOR COMMERCIAL FABRICATION OF PATTERNED MEDIA 审中-公开
标题翻译：用于商业制图的制图和方法
公开(公告)号：US20120090992A1
公开(公告)日：2012-04-19
申请号：US13338182
申请日：2011-12-27
申请人： Kevin P. Fairbairn , Michael S. Barnes , Terry Bluck , Ren Xu , Charles Liu , Ralph Kerns
发明人： Kevin P. Fairbairn , Michael S. Barnes , Terry Bluck , Ren Xu , Charles Liu , Ralph Kerns
IPC分类号： C23C14/34
CPC分类号： G11B5/84 , G11B5/855 , H01J37/3438
摘要： A system is provided for etching patterned media disks for hard drive. The modular system may be tailored to perform specific processes sequences so that a patterned media disk is fabricated without removing the disk from vacuum environment. In some sequence the magnetic stack is etched while in other the etch is performed prior to forming the magnetic stack. In a further sequence ion implantation is used without etching steps. For etching a movable non-contact electrode is utilized to perform sputter etch. The cathode moves to near contact distance to, but not contacting, the substrate so as to couple RF energy to the disk. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched.
摘要翻译：提供了用于蚀刻用于硬盘驱动器的图案化介质盘的系统。模块化系统可以被定制以执行特定的处理序列，使得图案化的介质盘被制造而不从真空环境中移除盘。在一些顺序中，磁性堆叠被蚀刻，而另一些蚀刻则在形成磁性堆叠之前进行。在另外的序列中，使用离子注入而没有蚀刻步骤。为了蚀刻可移动的非接触电极用于进行溅射蚀刻。阴极移动到与衬底接近但不接触的接近距离，以将RF能量耦合到盘。衬底垂直地保持在载体中，并且两侧被连续蚀刻。也就是说，在一个室中蚀刻一面，然后在下一个室中蚀刻第二面。

4. 发明申请

US20090047417A1 METHOD AND SYSTEM FOR VAPOR PHASE APPLICATION OF LUBRICANT IN DISK MEDIA MANUFACTURING PROCESS 审中-公开
标题翻译：润滑剂在液体介质制造过程中的蒸汽相应用方法和系统
公开(公告)号：US20090047417A1
公开(公告)日：2009-02-19
申请号：US12060174
申请日：2008-03-31
申请人： Michael S. Barnes , Charles Liu , Ren Xu
发明人： Michael S. Barnes , Charles Liu , Ren Xu
IPC分类号： C23C14/54 , B05C11/10 , B05D5/12
CPC分类号： G11B5/8408 , F16N29/02
摘要： Lubricant coatings are applied as vapor to magnetic disks. The method and apparatus include applying vaporizing heat to a pre-determined amount of liquid to form a vapor. Precision delivery of lubricant vapor allows close-loop lube thickness control. The flow of the liquid to the heater is controlled such that only a pre-determined amount from the reservoir flows to the heater at a time, the pre-determined amount is vaporized. According to an aspect, the pre-determined amount of liquid is transferred from the reservoir for the application of vaporizing heat; isolating the reservoir from the vacuum of the vacuum chamber. The method enables multiple types of lubricants to be applied to the disk. Another heater is included for applying vaporizing heat to a second liquid to form a second vapor to supply to the disk. According to an aspect, pulsed lubricant vapor delivery is provided, conserving lubricant and minimizing thermal decomposition.
摘要翻译：润滑剂涂层作为蒸汽施加到磁盘上。该方法和装置包括将蒸发热量施加到预定量的液体以形成蒸气。润滑剂蒸汽的精确输送允许闭环润滑剂厚度控制。控制液体到加热器的流动，使得只有来自储存器的预定量一次才流入加热器，预定量被蒸发。根据一个方面，预定量的液体从储存器转移以用于蒸发热; 将储存器与真空室的真空隔离。该方法可以将多种润滑剂应用于磁盘。包括另一个加热器，用于将蒸发热量施加到第二液体以形成第二蒸气以供应到盘。根据一个方面，提供脉冲润滑剂蒸汽输送，保护润滑剂并使热分解最小化。

5. 发明申请

US20090145879A1 SYSTEM AND METHOD FOR COMMERCIAL FABRICATION OF PATTERNED MEDIA 有权
标题翻译：用于商业制图的制图和方法
公开(公告)号：US20090145879A1
公开(公告)日：2009-06-11
申请号：US12329462
申请日：2008-12-05
申请人： Kevin P. Fairbairn , Michael S. Barnes , Terry Bluck , Ren Xu , Charles Liu , Ralph Kerns
发明人： Kevin P. Fairbairn , Michael S. Barnes , Terry Bluck , Ren Xu , Charles Liu , Ralph Kerns
IPC分类号： C23F1/00
CPC分类号： G11B5/84 , G11B5/855 , H01J37/3438
摘要： A system is provided for etching patterned media disks for hard drive. The modular system may be tailored to perform specific processes sequences so that a patterned media disk is fabricated without removing the disk from vacuum environment. In some sequence the magnetic stack is etched while in other the etch is performed prior to forming the magnetic stack. In a further sequence ion implantation is used without etching steps. For etching a movable non-contact electrode is utilized to perform sputter etch. The cathode moves to near contact distance to, but not contacting, the substrate so as to couple RF energy to the disk. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched.
摘要翻译：提供了用于蚀刻用于硬盘驱动器的图案化介质盘的系统。模块化系统可以被定制以执行特定的处理顺序，使得图案化的介质盘被制造而不从真空环境中移除盘。在一些顺序中，磁性堆叠被蚀刻，而另一些蚀刻则在形成磁性堆叠之前进行。在另外的序列中，使用离子注入而没有蚀刻步骤。为了蚀刻可移动的非接触电极用于进行溅射蚀刻。阴极移动到与衬底接近但不接触的接近距离，以将RF能量耦合到盘。衬底垂直地保持在载体中，并且两侧被连续蚀刻。也就是说，在一个室中蚀刻一面，然后在下一个室中蚀刻第二面。

6. 发明授权

US08349196B2 System and method for commercial fabrication of patterned media 有权
标题翻译：用于商业制作图案化介质的系统和方法
公开(公告)号：US08349196B2
公开(公告)日：2013-01-08
申请号：US12329462
申请日：2008-12-05
申请人： Kevin P. Fairbairn , Michael S. Barnes , Terry Bluck , Ren Xu , Charles Liu , Ralph Kerns
发明人： Kevin P. Fairbairn , Michael S. Barnes , Terry Bluck , Ren Xu , Charles Liu , Ralph Kerns
IPC分类号： B44C1/22
CPC分类号： G11B5/84 , G11B5/855 , H01J37/3438
摘要： A system is provided for etching patterned media disks for hard drive. The modular system may be tailored to perform specific processes sequences so that a patterned media disk is fabricated without removing the disk from vacuum environment. In some sequence the magnetic stack is etched while in other the etch is performed prior to forming the magnetic stack. In a further sequence ion implantation is used without etching steps. For etching a movable non-contact electrode is utilized to perform sputter etch. The cathode moves to near contact distance to, but not contacting, the substrate so as to couple RF energy to the disk. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched.
摘要翻译：提供了用于蚀刻用于硬盘驱动器的图案化介质盘的系统。模块化系统可以被定制以执行特定的处理顺序，使得图案化的介质盘被制造而不从真空环境中移除盘。在一些顺序中，磁性堆叠被蚀刻，而另一些蚀刻则在形成磁性堆叠之前进行。在另外的序列中，使用离子注入而没有蚀刻步骤。为了蚀刻可移动的非接触电极用于进行溅射蚀刻。阴极移动到与衬底接近但不接触的接近距离，以将RF能量耦合到盘。衬底垂直地保持在载体中，并且两侧被连续蚀刻。也就是说，在一个室中蚀刻一面，然后在下一个室中蚀刻第二面。

7. 发明授权

US06928723B2 Method for making a magnetoresistive sensor having a cobalt-ferrite pinning layer 失效
标题翻译：制造具有钴铁氧体钉扎层的磁阻传感器的方法
公开(公告)号：US06928723B2
公开(公告)日：2005-08-16
申请号：US10746021
申请日：2003-12-23
申请人： Matthew Joseph Carey , Hoa Van Do , Robin Frederick Charles Farrow , Bruce Alvin Gurney , David Thomas Margulies , Ronald Franklin Marks , Philip Milton Rice , Ren Xu
发明人： Matthew Joseph Carey , Hoa Van Do , Robin Frederick Charles Farrow , Bruce Alvin Gurney , David Thomas Margulies , Ronald Franklin Marks , Philip Milton Rice , Ren Xu
IPC分类号： G01R33/09 , G11B5/012 , G11B5/39 , H01F10/32 , H01F41/30 , G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/012 , G11B5/3932 , G11B5/3967 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49071
摘要： An exchange-coupled magnetic structure of a cobalt-ferrite layer adjacent a magnetic metal layer is used in magnetorestive sensors, such as spin valves or tunnel junction valves. The exchange-coupled magnetic structure is used in a pinning structure pinning the magnetization of a ferromagnetic pinned layer, or in an AP pinned layer. A low coercivity ferrite may be used in an AP free layer. Cobalt-ferrite layers may be formed by co-sputtering of Co and Fe in an oxygen/argon gas mixture, or by sputtering of a CoFe2 composition target in an oxygen/argon gas mixture. Alternatively, the cobalt-ferrite layer may be formed by evaporation of Co and Fe from an alloy source or separate sources along with a flux of oxygen atoms from a RF oxygen atom beam source. Magnetoresistive sensors including cobalt-ferrite layers have small read gaps and produce large signals with high efficiency.
摘要翻译：邻近磁性金属层的钴铁氧体层的交换耦合磁性结构被用于诸如自旋阀或隧道结阀的磁力回转传感器中。交换耦合磁结构用于钉扎铁磁钉扎层或AP钉扎层的磁化的钉扎结构。低矫顽力铁氧体可用于AP自由层。钴 - 铁氧体层可以通过在氧/氩气混合物中共同溅射Co和Fe，或者通过在氧/氩气混合物中溅射CoFe 2 N 2组合物靶来形成。或者，钴 - 铁素体层可以通过从合金源蒸发Co和Fe以及来自RF氧原子束源的氧原子束的分离源来形成。包括钴 - 铁氧体层的磁阻传感器具有小的读取间隙，并产生高效率的大信号。

8. 发明授权

US06452761B1 Magneto-resistive and spin-valve sensor gap with reduced thickness and high thermal conductivity 失效
标题翻译：磁阻和自旋阀传感器间隙具有减小的厚度和高导热性
公开(公告)号：US06452761B1
公开(公告)日：2002-09-17
申请号：US09483087
申请日：2000-01-14
申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Bruce Alvin Gurney , Stuart Stephen Papworth-Parkin , Ren Xu
发明人： Matthew Joseph Carey , Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Bruce Alvin Gurney , Stuart Stephen Papworth-Parkin , Ren Xu
IPC分类号： G11B533
CPC分类号： B82Y10/00 , G11B5/3103 , G11B5/3106 , G11B5/3133 , G11B5/3903 , G11B5/40 , Y10T29/49043
摘要： The current invention provides for magnetic sensor devices with reduced gap thickness and improved thermal conductivity. Gap structures of the current invention are integrated in laminated Magneto-Resistive and Spin-Valve sensors used in magnetic data storage systems. The gap structures are produced by depositing metal layers and oxidizing portions of or all of the metal layers to form thin high quality oxidized metal dielectric separator layers. The oxidized metal layer provides for excellent electrical insulation of the sensor element and any remaining metallic portions of the metal layers provide a thermally conducting pathway to assist the dissipation of heat generated by the sensor element. Because of the combined qualities of electrical insulation and thermal conductivity, magnetic sensor devices of this invention can be made with thinner gap structures and operated at higher drive currents. Further, oxidized metal layers provide suitable surfaces to growing oxidized metal gap insulator layers of any thickness.
摘要翻译：本发明提供了具有减小的间隙厚度和改善的导热性的磁传感器装置。本发明的间隙结构集成在磁数据存储系统中使用的层压磁阻和旋转阀传感器中。通过沉积金属层和氧化金属层的全部或全部以形成薄的高质量的氧化金属介电隔离层来产生间隙结构。氧化的金属层提供传感器元件的优异的电绝缘性，并且金属层的任何剩余的金属部分提供导热通路，以帮助消散由传感器元件产生的热量。由于电绝缘和导热性的综合特性，本发明的磁传感器装置可以用较薄的间隙结构制成，并在较高的驱动电流下工作。此外，氧化的金属层为任何厚度的生长的氧化金属间隙绝缘体层提供合适的表面。

9. 发明授权

US09872121B1 Method and system of processing 5.1-channel signals for stereo replay using binaural corner impulse response 有权
公开(公告)号：US09872121B1
公开(公告)日：2018-01-16
申请号：US15591283
申请日：2017-05-10
申请人： Ren Xu , Litang Gu
发明人： Ren Xu , Litang Gu
IPC分类号： H04S7/00 , H04R3/14 , H04S3/00
CPC分类号： H04S7/303 , H04R3/14 , H04S3/008 , H04S2400/01 , H04S2400/03 , H04S2420/01
摘要： A down-mixing method of 5.1 audio input channels for two channel replay by DRC processing of the LFE and the LS and RS channel signal before mixing, and by filtering LS and RS channels with BRTFs measured from placing a loud speaker at a corner of a room and measuring head at the diagonal corner of the room.

10. 发明授权

US06721144B2 Spin valves with co-ferrite pinning layer 有权
标题翻译：自旋阀与共铁氧体钉扎层
公开(公告)号：US06721144B2
公开(公告)日：2004-04-13
申请号：US09755556
申请日：2001-01-04
申请人： Matthew Joseph Carey , Hoa Van Do , Robin Frederick Charles Farrow , Bruce Alvin Gurney , David Thomas Margulies , Ronald Franklin Marks , Philip Milton Rice , Ren Xu
发明人： Matthew Joseph Carey , Hoa Van Do , Robin Frederick Charles Farrow , Bruce Alvin Gurney , David Thomas Margulies , Ronald Franklin Marks , Philip Milton Rice , Ren Xu
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/012 , G11B5/3932 , G11B5/3967 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49071
摘要： An exchange-coupled magnetic structure of a cobalt-ferrite layer adjacent a magnetic metal layer is used in magnetorestive sensors, such as spin valves or tunnel junction valves. The exchange-coupled magnetic structure is used in a pinning structure pinning the magnetization of a ferromagnetic pinned layer, or in an AP pinned layer. A low coercivity ferrite may be used in an AP free layer. Cobalt-ferrite layers may be formed by co-sputtering of Co and Fe in an oxygen/argon gas mixture, or by sputtering of a CoFe2 composition target in an oxygen/argon gas mixture. Alternatively, the cobalt-ferrite layer may be formed by evaporation of Co and Fe from an alloy source or separate sources along with a flux of oxygen atoms from a RF oxygen atom beam source. Magnetoresistive sensors including cobalt-ferrite layers have small read gaps and produce large signals with high efficiency.
摘要翻译：邻近磁性金属层的钴铁氧体层的交换耦合磁性结构被用于诸如自旋阀或隧道结阀的磁力回转传感器中。交换耦合磁结构用于钉扎铁磁钉扎层或AP钉扎层的磁化的钉扎结构。低矫顽力铁氧体可用于AP自由层。钴 - 铁氧体层可以通过在氧/氩气混合物中共同溅射Co和Fe，或者通过在氧/氩气混合物中溅射CoFe 2组合物靶来形成。或者，钴 - 铁素体层可以通过从合金源蒸发Co和Fe以及来自RF氧原子束源的氧原子束的分离源来形成。包括钴 - 铁氧体层的磁阻传感器具有小的读取间隙，并产生高效率的大信号。

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