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41. 发明申请

US20050170981A1 Cleaning composition and method of cleaning a semiconductor device using the same 有权
标题翻译：使用该半导体器件的清洁组合物和清洁半导体器件的方法
公开(公告)号：US20050170981A1
公开(公告)日：2005-08-04
申请号：US11038585
申请日：2005-01-19
申请人： Chang-Sup Mun , Chang-Ki Hong , Sang-Jun Choi , Woo-Sung Han
发明人： Chang-Sup Mun , Chang-Ki Hong , Sang-Jun Choi , Woo-Sung Han
IPC分类号： C11D1/12 , C11D1/14 , C11D3/00 , C11D3/20 , C11D3/34 , C11D11/00 , C11D1/00
CPC分类号： H01L21/02071 , C11D1/146 , C11D3/0073 , C11D3/2031 , C11D3/2055 , C11D3/3409 , C11D3/3427 , C11D11/0047
摘要： A cleaning composition comprises an alkali solution, pure water, and a surfactant represented by the following chemical formula: R1-OSO3—HA+ wherein R1 is one selected from a group consisting of a butyl group, an isobutyl group, an isooctyl group, a nonyl phenyl group, an octyl phenyl group, a decyl group, a tridecyl group, a lauryl group, a myristyl group, a cetyl group, a stearyl group, an oleyl group, a licenoleyl group and a behnyl group, and A is one selected from a group consisting of ammonia, ethanol amine, diethanol amine and triethanol amine.
摘要翻译：清洁组合物包含碱溶液，纯水和由以下化学式表示的表面活性剂：其中R 1是选自下列化学式的一种：由丁基，异丁基，异辛基，壬基苯基，辛基苯基，癸基，十三烷基，月桂基，肉豆蔻基，十六烷基，硬脂基，油基基团，丙烯酰基和苯丙基，A是选自氨，乙醇胺，二乙醇胺和三乙醇胺中的一种。

42. 发明授权

US07562662B2 Cleaning solution and cleaning method of a semiconductor device 失效
标题翻译：半导体器件的清洗液和清洗方法
公开(公告)号：US07562662B2
公开(公告)日：2009-07-21
申请号：US11736260
申请日：2007-04-17
申请人： Sang-Yong Kim , Sang-Jun Choi , Chang-Ki Hong
发明人： Sang-Yong Kim , Sang-Jun Choi , Chang-Ki Hong
IPC分类号： B08B3/04 , B08B3/08 , C11D1/00 , C11D3/02 , C11D3/24
CPC分类号： C23F1/16 , C11D3/042 , C11D7/08 , C11D11/0047 , H01L21/02063 , H01L21/02074 , H01L21/32134 , H01L21/76805 , H01L21/76814
摘要： A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide layer and then removing the chemical oxide layer, thereby removing foreign bodies from a surface of the semiconductor substrate. Accordingly, the foreign bodies can be substantially removed from the surface of the substrate without corroding a metal.
摘要翻译：一种用于在制造半导体器件期间去除异物的清洁方法，包括用包括氧化剂的清洁溶液处理基底以形成化学氧化物层，然后除去化学氧化物层，从而从半导体衬底的表面去除异物。因此，异物可以基本上从基板的表面除去而不会腐蚀金属。

43. 发明授权

US07309683B2 Cleaning composition and method of cleaning a semiconductor device using the same 有权
标题翻译：使用该半导体器件的清洁组合物和清洁半导体器件的方法
公开(公告)号：US07309683B2
公开(公告)日：2007-12-18
申请号：US11038585
申请日：2005-01-19
申请人： Chang-Sup Mun , Chang-Ki Hong , Sang-Jun Choi , Woo-Sung Han
发明人： Chang-Sup Mun , Chang-Ki Hong , Sang-Jun Choi , Woo-Sung Han
IPC分类号： C11D1/12
CPC分类号： H01L21/02071 , C11D1/146 , C11D3/0073 , C11D3/2031 , C11D3/2055 , C11D3/3409 , C11D3/3427 , C11D11/0047
摘要： A cleaning composition comprises an alkali solution, pure water, and a surfactant represented by the following chemical formula: R1-OSO3—HA+ wherein R1 is one selected from a group consisting of a butyl group, an isobutyl group, an isooctyl group, a nonyl phenyl group, an octyl phenyl group, a decyl group, a tridecyl group, a lauryl group, a myristyl group, a cetyl group, a stearyl group, an oleyl group, a licenoleyl group and a behnyl group, and A is one selected from a group consisting of ammonia, ethanol amine, diethanol amine and triethanol amine.
摘要翻译：清洁组合物包含碱溶液，纯水和由以下化学式表示的表面活性剂：其中R 1是选自下列化学式的一种：由丁基，异丁基，异辛基，壬基苯基，辛基苯基，癸基，十三烷基，月桂基，肉豆蔻基，鲸蜡基，硬脂基，油基基团，丙烯酰基和苯丙基，A是选自氨，乙醇胺，二乙醇胺和三乙醇胺中的一种。

44. 发明授权

US07216653B2 Cleaning solution and cleaning method of a semiconductor device 失效
标题翻译：半导体器件的清洗液和清洗方法
公开(公告)号：US07216653B2
公开(公告)日：2007-05-15
申请号：US11502011
申请日：2006-08-10
申请人： Sang-Yong Kim , Sang-Jun Choi , Chang-Ki Hong
发明人： Sang-Yong Kim , Sang-Jun Choi , Chang-Ki Hong
IPC分类号： B08B3/04 , B08B3/08 , C11D1/00 , C11D3/02 , C11D3/24
CPC分类号： C23F1/16 , C11D3/042 , C11D7/08 , C11D11/0047 , H01L21/02063 , H01L21/02074 , H01L21/32134 , H01L21/76805 , H01L21/76814
摘要： A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide layer and then removing the chemical oxide layer, thereby removing foreign bodies from a surface of the semiconductor substrate. Accordingly, the foreign bodies can be substantially removed from the surface of the substrate without corroding a metal.
摘要翻译：一种用于在制造半导体器件期间去除异物的清洁方法，包括用包括氧化剂的清洁溶液处理基底以形成化学氧化物层，然后除去化学氧化物层，从而从半导体衬底的表面去除异物。因此，异物可以基本上从基板的表面除去而不会腐蚀金属。

45. 发明申请

US20060189064A1 Method of manufacturing capacitor of semiconductor device 有权
标题翻译：制造半导体器件电容器的方法
公开(公告)号：US20060189064A1
公开(公告)日：2006-08-24
申请号：US11329577
申请日：2006-01-11
申请人： Woo-Gwan Shim , Jung-Min Oh , Chang-Ki Hong , Sang-Jun Choi , Sang-Yong Kim
发明人： Woo-Gwan Shim , Jung-Min Oh , Chang-Ki Hong , Sang-Jun Choi , Sang-Yong Kim
IPC分类号： H01L21/8238
CPC分类号： H01L28/91 , H01L27/10852
摘要： Provided is a method of manufacturing a capacitor of a semiconductor device, which can prevent tilting or an electrical short of a lower electrode. In the method, a mesh-type bridge insulating layer is formed above the contact plug on a mold oxide layer. The mold oxide layer and the bridge insulating layer are etched to define an electrode region. The mold oxide layer is removed using an etching gas having an etch selectivity of 500 or greater for the mold oxide layer with respect to the bridge insulating layer.
摘要翻译：提供一种制造半导体器件的电容器的方法，其可以防止下电极的倾斜或电短路。在该方法中，在模具氧化物层上的接触插塞上方形成网状桥接绝缘层。蚀刻模具氧化物层和桥接绝缘层以限定电极区域。使用相对于桥接绝缘层的模具氧化物层的蚀刻选择性为500以上的蚀刻气体去除模具氧化物层。

46. 发明授权

US07531491B2 Aqueous cleaning solution for integrated circuit device and method of cleaning using the cleaning solution 有权
标题翻译：用于集成电路器件的水性清洗液和使用清洁溶液进行清洗的方法
公开(公告)号：US07531491B2
公开(公告)日：2009-05-12
申请号：US10982406
申请日：2004-11-05
申请人： Chang-Sup Min , Sang-Jun Choi , Chang-Ki Hong
发明人： Chang-Sup Min , Sang-Jun Choi , Chang-Ki Hong
IPC分类号： C11D7/50
CPC分类号： C11D3/0026 , C11D1/721 , C11D3/0073 , C11D3/044 , C11D3/164 , C11D3/30 , C11D3/3427 , C11D11/0047
摘要： Aqueous cleaning solutions are provided for cleaning an integrated circuit device formed on a wafer, as well as methods of cleaning a wafer using the aqueous cleaning solution. In one aspect, an aqueous cleaning solution includes a low foam surfactant, a metal corrosion inhibitor, an acidic pH control agent or an alkali pH control agent, and water.
摘要翻译：提供了用于清洁形成在晶片上的集成电路器件的水性清洁溶液，以及使用该水性清洗溶液清洗晶片的方法。一方面，含水清洗液包括低泡沫表面活性剂，金属缓蚀剂，酸性pH调节剂或碱性pH控制剂，以及水。

47. 发明申请

US20090023265A1 ETCHING SOLUTION FOR REMOVAL OF OXIDE FILM, METHOD FOR PREPARING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于除去氧化膜的蚀刻溶液，其制备方法和制备半导体器件的方法
公开(公告)号：US20090023265A1
公开(公告)日：2009-01-22
申请号：US12243728
申请日：2008-10-01
申请人： CHANG-SUP MUN , Hyung-Ho Ko , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
发明人： CHANG-SUP MUN , Hyung-Ho Ko , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L21/762 , H01L21/306 , H01L21/02
CPC分类号： H01L21/31111 , H01L21/76224 , H01L28/40
摘要： Provided are an anionic surfactant-containing etching solution for removal of an oxide film, preparation methods thereof, and methods of fabricating a semiconductor device using the etching solution. The etching solution includes a hydrofluoric acid (HF), deionized water, and an anionic surfactant. The anionic surfactant is a compound in which an anime salt is added as a counter ion, as represented by R1—OSO3−HA+, R1—CO2−HA+,R1—PO42—(HA+)2,(R1)2—PO4—HA+, or R1—SO3—HA+ where R1 is a straight or branched hydrocarbon group of C4 to C22 and A is ammonia or amine. The etching solution provides a high etching selectivity ratio of an oxide film to a nitride film or a polysilicon film. Therefore, in a semiconductor device fabrication process such as a STI device isolation process or a capacitor formation process, when an oxide film is exposed together with a nitride film or a polysilicon film, the etching solution can be efficiently used in selectively removing only the oxide film.
摘要翻译：提供了一种用于去除氧化膜的含阴离子表面活性剂的蚀刻溶液，其制备方法以及使用该蚀刻溶液制造半导体器件的方法。蚀刻溶液包括氢氟酸（HF），去离子水和阴离子表面活性剂。阴离子表面活性剂是其中以R1-OSO3-HA +，R1-CO2-HA +，R1-PO42-（HA +）2，（R1）2-PO4-HA + 或R1-SO3-HA +，其中R1是C4至C22的直链或支链烃基，A是氨或胺。蚀刻溶液提供氧化膜与氮化物膜或多晶硅膜的高蚀刻选择性比。因此，在诸如STI器件隔离处理或电容器形成工艺的半导体器件制造工艺中，当氧化物膜与氮化物膜或多晶硅膜一起暴露时，可以有效地使用蚀刻溶液来仅选择性地除去氧化物电影。

48. 发明授权

US07322385B2 Apparatus for drying substrate and method thereof 失效
标题翻译：干燥基材的设备及其方法
公开(公告)号：US07322385B2
公开(公告)日：2008-01-29
申请号：US11158912
申请日：2005-06-22
申请人： Sang-Yong Kim , Chang-Ki Hong , Sang-Jun Choi , Woo-Gwan Shim
发明人： Sang-Yong Kim , Chang-Ki Hong , Sang-Jun Choi , Woo-Gwan Shim
IPC分类号： B65B1/04
CPC分类号： H01L21/67051 , H01L21/67034
摘要： An apparatus for drying a substrate using the Marangoni effect is disclosed. The apparatus includes a rotatable supporting portion on which a substrate is placed. A first nozzle for supplying de-ionized water and a second nozzle for supplying isopropyl alcohol vapor are provided on the supporting portion. When the isopropyl alcohol vapor is supplied to the center of the substrate at the initial stage, the amount of alcohol that reaches the substrate is controlled by a controlling portion such that the amount of the second liquid gradually increases.
摘要翻译：公开了一种使用Marangoni效应对基板进行干燥的装置。该装置包括可旋转的支撑部分，放置基板。用于提供去离子水的第一喷嘴和用于提供异丙醇蒸气的第二喷嘴设置在支撑部分上。当在初始阶段将异丙醇蒸汽供应到基材的中心时，通过控制部分控制到达基板的醇的量，使得第二液体的量逐渐增加。

49. 发明授权

US07105475B2 Cleaning solution and cleaning method of a semiconductor device 有权
公开(公告)号：US07105475B2
公开(公告)日：2006-09-12
申请号：US10859815
申请日：2004-06-03
申请人： Sang-Yong Kim , Sang-Jun Choi , Chang-Ki Hong
发明人： Sang-Yong Kim , Sang-Jun Choi , Chang-Ki Hong
IPC分类号： C11D1/00 , C11D3/02 , C11D3/24 , C11D3/20
CPC分类号： C23F1/16 , C11D3/042 , C11D7/08 , C11D11/0047 , H01L21/02063 , H01L21/02074 , H01L21/32134 , H01L21/76805 , H01L21/76814
摘要： A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide layer and then removing the chemical oxide layer, thereby removing foreign bodies from a surface of the semiconductor substrate. Accordingly, the foreign bodies can be substantially removed from the surface of the substrate without corroding a metal.

50. 发明申请

US20060172907A1 Microelectronic cleaning agent(s) and method(s) of fabricating semiconductor device(s) using the same 审中-公开
标题翻译：微电子清洗剂和使用其制造半导体器件的方法
公开(公告)号：US20060172907A1
公开(公告)日：2006-08-03
申请号：US11341412
申请日：2006-01-30
申请人： Sang-Yong Kim , Ji-Hoon Cha , Chang-Ki Hong , Sang-Jun Choi , Woo-Gwan Shim , Kui-Jong Baek , Sung-Bae Kim , Hyun-Tak Kim , Sang-Won Lee , Woong Han , Jung-Hun Lim
发明人： Sang-Yong Kim , Ji-Hoon Cha , Chang-Ki Hong , Sang-Jun Choi , Woo-Gwan Shim , Kui-Jong Baek , Sung-Bae Kim , Hyun-Tak Kim , Sang-Won Lee , Woong Han , Jung-Hun Lim
IPC分类号： C11D7/32
CPC分类号： C11D3/042 , C11D3/30 , C11D3/33 , C11D7/08 , C11D7/265 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D11/0047
摘要： According to an example embodiment of the present invention, the microelectronic cleaning agent may include a fluoride component, an acid component, a chelating agent, a surfactant and water. Example embodiments of the present invention provide a microelectronic cleaning agent which can selectively remove, for example, a high-k dielectric layer. The microelectronic cleaning agent includes from about 0.001 weight % to about 10 weight % of a fluoride component, from about 0.001 weight % to about 30 weight % of an acid component, from about 0.001 weight % to about 20 weight % of a chelating agent, from about 0.001 weight % to about 10 weight % of a surfactant, and water (H2O). The water may comprise the remainder of the cleaning agent. According to another embodiment of the present invention, a method of fabricating a semiconductor device using the microelectronic cleaning agent is also provided.
摘要翻译：根据本发明的示例性实施方案，微电子清洗剂可以包括氟化物组分，酸组分，螯合剂，表面活性剂和水。本发明的示例性实施方案提供了可以选择性地除去例如高k电介质层的微电子清洁剂。微电子清洁剂包括约0.001重量％至约10重量％的氟化物组分，约0.001重量％至约30重量％的酸组分，约0.001重量％至约20重量％的螯合剂，约0.001重量％至约10重量％的表面活性剂和水（H 2 O 2）。水可以包括剩余的清洁剂。根据本发明的另一实施例，还提供了使用微电子清洁剂制造半导体器件的方法。

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