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41. 发明授权

US07095074B2 Semiconductor device with reduced memory leakage current 有权
标题翻译：具有减少内存泄漏电流的半导体器件
公开(公告)号：US07095074B2
公开(公告)日：2006-08-22
申请号：US10196166
申请日：2002-07-17
申请人： Keisuke Tsukamoto , Yoshihiro Ikeda , Tsutomu Okazaki , Daisuke Okada , Hiroshi Yanagita
发明人： Keisuke Tsukamoto , Yoshihiro Ikeda , Tsutomu Okazaki , Daisuke Okada , Hiroshi Yanagita
IPC分类号： H01L29/76 , H01L29/788
CPC分类号： H01L27/11526 , H01L27/105 , H01L27/11543
摘要： Defects in element forming regions on which memory cells of a non-volatile memory are formed are to be diminished to reduce leakage current. End portions of element forming regions with non-volatile memory cells formed thereon are extended a length D by utilizing the region which underlies a dummy conductive film, whereby a stress induced from an insulating film which surrounds the element forming regions is concentrated on the extended region. As a result, defects do not extend up to the regions where memory cells are formed and therefore it is possible to reduce leakage current in the memory cells.
摘要翻译：在其上形成非易失性存储器的存储单元的元件形成区域中的缺陷将被减小以减少泄漏电流。在其上形成有非易失性存储单元的元件形成区域的端部通过利用虚设导电膜下面的区域而延伸长度D，由此围绕元件形成区域的绝缘膜引起的应力集中在延伸区域上。结果，缺陷不延伸到形成存储单元的区域，因此可以减少存储单元中的漏电流。

42. 发明申请

US20060039230A1 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US20060039230A1
公开(公告)日：2006-02-23
申请号：US11180659
申请日：2005-07-14
申请人： Hideaki Kurata , Yoshihiro Ikeda , Masahiro Shimizu , Kenji Kozakai , Satoshi Noda
发明人： Hideaki Kurata , Yoshihiro Ikeda , Masahiro Shimizu , Kenji Kozakai , Satoshi Noda
IPC分类号： G11C8/02
CPC分类号： G11C8/14
摘要： An object of the present invention is to provide a semiconductor memory device capable of preventing a defect caused by falling of a word line and deterioration in patterning precision due to disturbance of the pitch of word lines at an end of a memory block. Plural dummy word lines are disposed at an end of a memory block, a word driver is mounted for the dummy word line to control the threshold voltage of a dummy memory cell formed below the dummy word line. Also at the time of operating a memory area for storing data from the outside, a bias is applied to the dummy word line. The invention can prevent a defect caused by falling of a word line and deterioration in patterning precision due to disturbance of the pitches of word lines at an end of a memory block, and realize high yield and reliably operation.
摘要翻译：本发明的目的是提供一种半导体存储器件，其能够防止由于字线的下降引起的缺陷以及由于在存储器块的端部处的字线的间距的干扰而导致的图案精度的劣化。多个虚拟字线设置在存储器块的末端，为虚拟字线安装字驱动器以控制形成在虚拟字线下面的虚拟存储器单元的阈值电压。此外，在操作用于存储来自外部的数据的存储区域时，偏置被施加到虚拟字线。本发明可以防止由于字线下降引起的缺陷和由于记忆块末端的字线的间距的干扰导致的图案精度的劣化，并且实现高产率和可靠的操作。

43. 发明申请

US20050113680A1 Cerebral ischemia diagnosis assisting apparatus, X-ray computer tomography apparatus, and apparatus for aiding diagnosis and treatment of acute cerebral infarct 审中-公开
标题翻译：脑缺血诊断辅助装置，X射线计算机断层摄影装置以及急性脑梗死诊断和治疗装置
公开(公告)号：US20050113680A1
公开(公告)日：2005-05-26
申请号：US10971010
申请日：2004-10-25
申请人： Yoshihiro Ikeda , Kieran Murphy , Miwa Okumura , Yasuko Fujisawa , Yuusuke Toki , Yasuhiro Noshi
发明人： Yoshihiro Ikeda , Kieran Murphy , Miwa Okumura , Yasuko Fujisawa , Yuusuke Toki , Yasuhiro Noshi
IPC分类号： A61B5/05 , A61B6/03 , G06T5/00 , G06T7/00
CPC分类号： A61B6/507 , A61B6/481 , A61B6/487 , A61B6/501 , A61B6/504 , G06T7/0012 , G06T7/11 , G06T7/68 , G06T11/001 , G06T2207/10081 , G06T2207/30016
摘要： A cerebral ischemia diagnosis assisting apparatus comprises a storing portion for storing multi-slices or volume data with regard to the head portion of a subject, an image generating portion for generating a tomography image of a brain from the multi-slices or the volume data, an image processing portion for processing the tomography image for generating a contrast highlighting image and a brain sulci highlighting image or either thereof, and a display portion for displaying the tomography image along with the contrast highlighting image and the brain sulci highlighting image.
摘要翻译：脑缺血诊断辅助装置包括用于存储关于被检体的头部的多层或体积数据的存储部，用于从多层或体积数据生成脑的断层摄影图像的图像生成部，用于处理用于产生对比度突出图像和脑苏醒突出图像的断层图像的图像处理部分，以及用于显示层析摄影图像以及对比度突出图像和脑苏醒突出图像的显示部分。

44. 发明授权

US5863631A Perpendicular magnetic recording medium and magnetic recording device using the same 失效
标题翻译：垂直磁记录介质和使用其的磁记录装置
公开(公告)号：US5863631A
公开(公告)日：1999-01-26
申请号：US813017
申请日：1997-03-06
申请人： Yoshiaki Sonobe , Yoshihiro Ikeda , Hiroshi Uchida , Takashi Toyooka , Yoshiuki Tagashira
发明人： Yoshiaki Sonobe , Yoshihiro Ikeda , Hiroshi Uchida , Takashi Toyooka , Yoshiuki Tagashira
IPC分类号： C23C14/14 , G11B5/00 , G11B5/012 , G11B5/39 , G11B5/64 , G11B5/65 , G11B5/66 , H01F10/16
CPC分类号： G11B5/656 , G11B5/00 , G11B5/012 , G11B5/66 , G11B5/39 , Y10S428/90
摘要： A perpendicular magnetic recording medium wherein a perpendicular magnetic film is formed on a substrate or a nonmagnetic film, and the perpendicular magnetic film contains Co and Cr, the content of the Cr being 22 at. % or higher but 30 at. % or less. The medium is used in a magnetic recording disk drive using a magnetoresistive read head.
摘要翻译：在基板或非磁性膜上形成垂直磁性膜的垂直磁记录介质，并且垂直磁性膜含有Co和Cr，Cr的含量为22原子。％或更高，但30 at。％或更少。该介质用于使用磁阻读头的磁记录盘驱动器。

45. 发明授权

US5811316A Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring 失效
标题翻译：在铝线上形成氧化硅和氮化硅钝化层的方法
公开(公告)号：US5811316A
公开(公告)日：1998-09-22
申请号：US460931
申请日：1995-06-05
申请人： Jun Sugiura , Osamu Tsuchiya , Makoto Ogasawara , Fumio Ootsuka , Kazuyoshi Torii , Isamu Asano , Nobuo Owada , Mitsuaki Horiuchi , Tsuyoshi Tamaru , Hideo Aoki , Nobuhiro Otsuka , Seiichirou Shirai , Masakazu Sagawa , Yoshihiro Ikeda , Masatoshi Tsuneoka , Toru Kaga , Tomotsugu Shimmyo , Hidetsugu Ogishi , Osamu Kasahara , Hiromichi Enami , Atsushi Wakahara , Hiroyuki Akimori , Sinichi Suzuki , Keisuke Funatsu , Yoshinao Kawasaki , Tunehiko Tubone , Takayoshi Kogano , Ken Tsugane
发明人： Jun Sugiura , Osamu Tsuchiya , Makoto Ogasawara , Fumio Ootsuka , Kazuyoshi Torii , Isamu Asano , Nobuo Owada , Mitsuaki Horiuchi , Tsuyoshi Tamaru , Hideo Aoki , Nobuhiro Otsuka , Seiichirou Shirai , Masakazu Sagawa , Yoshihiro Ikeda , Masatoshi Tsuneoka , Toru Kaga , Tomotsugu Shimmyo , Hidetsugu Ogishi , Osamu Kasahara , Hiromichi Enami , Atsushi Wakahara , Hiroyuki Akimori , Sinichi Suzuki , Keisuke Funatsu , Yoshinao Kawasaki , Tunehiko Tubone , Takayoshi Kogano , Ken Tsugane
IPC分类号： G03F7/20 , G03F9/00 , H01L21/02 , H01L21/285 , H01L21/336 , H01L21/76 , H01L21/768 , H01L21/8238 , H01L21/8242 , H01L23/29 , H01L23/495 , H01L23/525 , H01L23/532 , H01L23/544 , H01L27/092 , H01L27/10 , H01L27/108 , H01L29/78 , H01L21/28
CPC分类号： H01L27/10852 , G03F7/70333 , G03F9/70 , H01L21/28512 , H01L21/76 , H01L21/76801 , H01L21/76804 , H01L21/76831 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76877 , H01L21/823807 , H01L23/291 , H01L23/4951 , H01L23/5258 , H01L23/532 , H01L23/544 , H01L27/0922 , H01L28/40 , H01L2223/54473 , H01L2224/05554 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/73215 , H01L24/45 , H01L24/48 , H01L27/0928 , H01L27/10808 , H01L2924/00014 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01029 , H01L2924/01039 , H01L2924/01079 , H01L2924/04941 , H01L2924/12036 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/3025 , Y10S257/90
摘要： Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel stopper regions over the principal surface portions below the element separating insulating film of the substrate by introducing an impurity into all the surface portions including the active regions and the inactive regions of the substrate after the first mask and the second mask have been removed.
摘要翻译：这里公开了一种半导体集成电路器件制造工艺，用于在由分离绝缘膜和沟道阻挡区域形成的无源区域围绕的衬底的这些有源区的主表面上形成MISFET，其包括：形成步骤通过不可氧化掩模的第一掩模和顺序地在衬底的有源区的主表面上的蚀刻掩模; 分别通过比第一掩模的不可氧化掩模和蚀刻掩模更薄的不可氧化掩模在第一掩模的侧壁上自对准形成第二掩模的步骤; 通过使用第一掩模和第二掩模蚀刻衬底的非活性区的主表面的步骤; 通过使用第一掩模和第二掩模的氧化在衬底的无活性区域的主表面上形成元件分离绝缘膜的步骤; 以及通过在第一掩模之后将杂质引入到包括基板的有源区域和非活性区域的全部表面部分中而在基板的元件分离绝缘膜下方的主表面部分上形成沟道阻挡区域的步骤，面具已被删除。

46. 发明授权

US5331191A Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same 失效
标题翻译：半导体集成电路装置及其制造方法及其制造装置
公开(公告)号：US5331191A
公开(公告)日：1994-07-19
申请号：US954142
申请日：1992-09-30
申请人： Jun Sugiura , Osamu Tsuchiya , Makoto Ogasawara , Fumio Ootsuka , Kazuyoshi Torii , Isamu Asano , Nobuo Owada , Mitsuaki Horiuchi , Tsuyoshi Tamaru , Hideo Aoki , Nobuhiro Otsuka , Seiichirou Shirai , Masakazu Sagawa , Yoshihiro Ikeda , Masatoshi Tsuneoka , Toru Kaga , Tomotsugu Shimmyo , Hidetsugu Ogishi , Osamu Kasahara , Hiromichi Enami , Atsushi Wakahara , Hiroyuki Akimori , Sinichi Suzuki , Keisuke Funatsu , Yoshinao Kawasaki , Tunehiko Tubone , Takayoshi Kogano , Ken Tsugane
发明人： Jun Sugiura , Osamu Tsuchiya , Makoto Ogasawara , Fumio Ootsuka , Kazuyoshi Torii , Isamu Asano , Nobuo Owada , Mitsuaki Horiuchi , Tsuyoshi Tamaru , Hideo Aoki , Nobuhiro Otsuka , Seiichirou Shirai , Masakazu Sagawa , Yoshihiro Ikeda , Masatoshi Tsuneoka , Toru Kaga , Tomotsugu Shimmyo , Hidetsugu Ogishi , Osamu Kasahara , Hiromichi Enami , Atsushi Wakahara , Hiroyuki Akimori , Sinichi Suzuki , Keisuke Funatsu , Yoshinao Kawasaki , Tunehiko Tubone , Takayoshi Kogano , Ken Tsugane
IPC分类号： G03F7/20 , G03F9/00 , H01L21/02 , H01L21/285 , H01L21/336 , H01L21/76 , H01L21/768 , H01L21/8238 , H01L21/8242 , H01L23/29 , H01L23/495 , H01L23/525 , H01L23/532 , H01L23/544 , H01L27/092 , H01L27/10 , H01L27/108 , H01L29/78 , H01L29/10
CPC分类号： H01L27/10852 , G03F7/70333 , G03F9/70 , H01L21/28512 , H01L21/76 , H01L21/76801 , H01L21/76804 , H01L21/76831 , H01L21/76834 , H01L21/76838 , H01L21/76843 , H01L21/76877 , H01L21/823807 , H01L23/291 , H01L23/4951 , H01L23/5258 , H01L23/532 , H01L23/544 , H01L27/0922 , H01L28/40 , H01L2223/54473 , H01L2224/05554 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/73215 , H01L24/45 , H01L24/48 , H01L27/0928 , H01L27/10808 , H01L2924/00014 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01029 , H01L2924/01039 , H01L2924/01079 , H01L2924/04941 , H01L2924/12036 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/3025 , Y10S257/90
摘要： Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel stopper regions over the principal surface portions below the element separating insulating film of the substrate by introducing an impurity into all the surface portions including the active regions and the inactive regions of the substrate after the first mask and the second mask have been removed.
摘要翻译：这里公开了一种半导体集成电路器件制造工艺，用于在由分离绝缘膜和沟道阻挡区域形成的无源区域围绕的衬底的这些有源区的主表面上形成MISFET，包括：形成步骤通过不可氧化掩模的第一掩模和顺序地在衬底的有源区的主表面上的蚀刻掩模; 分别通过比第一掩模的不可氧化掩模和蚀刻掩模更薄的不可氧化掩模在第一掩模的侧壁上自对准形成第二掩模的步骤; 通过使用第一掩模和第二掩模蚀刻衬底的非活性区的主表面的步骤; 通过使用第一掩模和第二掩模的氧化在衬底的无活性区域的主表面上形成元件分离绝缘膜的步骤; 以及通过在第一掩模之后将杂质引入到包括基板的有源区和非活性区域的全部表面部分中的方式，在基板的元件分离绝缘膜下方的主表面部分上形成沟道阻挡区域的步骤，面具已被删除。

47. 发明授权

US08747628B2 Perpendicular magnetic recording media with oxide-containing exchange coupling layer 有权
标题翻译：具有氧化物交换耦合层的垂直磁记录介质
公开(公告)号：US08747628B2
公开(公告)日：2014-06-10
申请号：US13438804
申请日：2012-04-03
申请人： Xiaoping Bian , Jack Jyh-Kau Chang , Qing Dai , Hoa V. Do , Yoshihiro Ikeda , Kentaro Takano , Chu S. Tran
发明人： Xiaoping Bian , Jack Jyh-Kau Chang , Qing Dai , Hoa V. Do , Yoshihiro Ikeda , Kentaro Takano , Chu S. Tran
IPC分类号： C23C14/08
CPC分类号： G11B5/66 , G11B5/65
摘要： A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.
摘要翻译：根据一个实施例的方法包括通过溅射在衬底上方形成高Ku第一氧化物磁性层; 通过溅射在第一氧化物磁性层上方形成低Ku第二氧化物磁性层; 在所述第二氧化物磁性层上方形成CoCrPt氧化物的交换耦合层; 以及在所述交换耦合层上方形成磁性覆盖层。还介绍了其他系统和方法。

48. 发明授权

US08718347B2 Image display apparatus and X-ray diagnosis apparatus 有权
标题翻译：图像显示装置和X射线诊断装置
公开(公告)号：US08718347B2
公开(公告)日：2014-05-06
申请号：US12769106
申请日：2010-04-28
申请人： Takashi Ichihara , Takuya Sakaguchi , Kazumasa Arakita , Yoshihiro Ikeda
发明人： Takashi Ichihara , Takuya Sakaguchi , Kazumasa Arakita , Yoshihiro Ikeda
IPC分类号： G06K9/00 , A61B5/05 , A61B6/00
CPC分类号： A61B6/504 , A61B6/032 , A61B6/463 , A61B6/469 , A61B6/481 , A61B6/50 , A61B6/507 , A61B6/5235 , G06T5/50 , G06T2207/10081 , G06T2207/10116 , G06T2207/30048 , G06T2207/30101
摘要： An X-ray perfusion-image creating unit creates an X-ray perfusion image indicating blood flow dynamics in a certain organ from an X-ray projection image of a subject given with a contrast agent. An image correction unit extracts thickness information indicating the thickness of a myocardium from a three-dimensional image taken by an X-ray Computed Tomography (CT) apparatus. Moreover, the image correction unit creates a corrected perfusion image in which the thickness of the myocardium in the X-ray perfusion image is corrected, based on the thickness information. A display unit then displays the corrected perfusion image.
摘要翻译： X射线灌注图像生成单元从用造影剂给予的被检体的X射线投影图像生成表示某一器官的血流动力学的X射线灌注图像。图像校正单元从由X射线计算机断层扫描（CT）装置拍摄的三维图像中提取表示心肌厚度的厚度信息。此外，图像校正单元基于厚度信息创建其中校正X射线灌注图像中的心肌的厚度的校正灌注图像。显示单元然后显示校正的灌注图像。

49. 发明申请

US20110026161A1 PARTIALLY-OXIDIZED CAP LAYER FOR HARD DISK DRIVE MAGNETIC MEDIA 有权
标题翻译：用于硬盘驱动磁性介质的部分氧化层
公开(公告)号：US20110026161A1
公开(公告)日：2011-02-03
申请号：US12533654
申请日：2009-07-31
申请人： Yoshihiro Ikeda
发明人： Yoshihiro Ikeda
IPC分类号： G11B5/127 , G11B5/706 , G11B5/66
CPC分类号： G11B5/66 , G11B5/65 , G11B5/667 , G11B5/7325 , G11B5/82
摘要： A perpendicular recording magnetic media with a partially-oxidized cap layer combines a second oxide layer with a first cap layer to form the singular, partially-oxidized cap. The oxidized portion and the non-oxidized portion of the partially-oxidized layer are sputtered from a same target and have a same composition of metallic elements. The Ms of the oxidized portion is about twice as high as the non-oxidized portion. The oxidized portion has a thickness in the range of about 5 to 25 angstroms. The layer composition may comprise CoPtCrBTa, with a Cr at % of about 18-24%, Pt at about 13-20%, B at about 4-10%, and Ta at about 0-2%.
摘要翻译：具有部分氧化的盖层的垂直记录磁性介质将第二氧化物层与第一盖层组合以形成单一的部分氧化的盖。部分氧化层的氧化部分和未氧化部分从相同的靶溅射并具有相同的金属元素组成。氧化部分的Ms约为非氧化部分的两倍。氧化部分的厚度在约5至25埃的范围内。层组成可以包括CoPtCrBTa，Cr％为约18-24％，Pt为约13-20％，B为约4-10％，Ta为约0-2％。

50. 发明申请

US20100272344A1 IMAGE DISPLAY APPARATUS AND X-RAY DIAGNOSIS APPARATUS 有权
标题翻译：图像显示装置和X射线诊断装置
公开(公告)号：US20100272344A1
公开(公告)日：2010-10-28
申请号：US12769106
申请日：2010-04-28
申请人： Takashi Ichihara , Takuya Sakaguchi , Kazumasa Arakita , Yoshihiro Ikeda
发明人： Takashi Ichihara , Takuya Sakaguchi , Kazumasa Arakita , Yoshihiro Ikeda
IPC分类号： G06T7/00
CPC分类号： A61B6/504 , A61B6/032 , A61B6/463 , A61B6/469 , A61B6/481 , A61B6/50 , A61B6/507 , A61B6/5235 , G06T5/50 , G06T2207/10081 , G06T2207/10116 , G06T2207/30048 , G06T2207/30101
摘要： An X-ray perfusion-image creating unit creates an X-ray perfusion image indicating blood flow dynamics in a certain organ from an X-ray projection image of a subject given with a contrast agent. An image correction unit extracts thickness information indicating the thickness of a myocardium from a three-dimensional image taken by an X-ray Computed Tomography (CT) apparatus. Moreover, the image correction unit creates a corrected perfusion image in which the thickness of the myocardium in the X-ray perfusion image is corrected, based on the thickness information. A display unit then displays the corrected perfusion image.
摘要翻译： X射线灌注图像生成单元从用造影剂给予的被检体的X射线投影图像生成表示某一器官的血流动力学的X射线灌注图像。图像校正单元从由X射线计算机断层扫描（CT）装置拍摄的三维图像中提取表示心肌厚度的厚度信息。此外，图像校正单元基于厚度信息创建其中校正X射线灌注图像中的心肌的厚度的校正灌注图像。显示单元然后显示校正的灌注图像。

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