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41. 发明授权

US07075456B2 Parking assist device 有权
标题翻译：停车辅助装置
公开(公告)号：US07075456B2
公开(公告)日：2006-07-11
申请号：US10928255
申请日：2004-08-30
申请人： Yuu Tanaka , Yoshifumi Iwata , Hideyuki Iwakiri , Hisashi Satonaka , Yuichi Kubota , Tomohiko Endo , Akira Matsui , Toru Sugiyama , Seiji Kawakami , Katsuhiko Iwazaki , Hiroaki Kataoka
发明人： Yuu Tanaka , Yoshifumi Iwata , Hideyuki Iwakiri , Hisashi Satonaka , Yuichi Kubota , Tomohiko Endo , Akira Matsui , Toru Sugiyama , Seiji Kawakami , Katsuhiko Iwazaki , Hiroaki Kataoka
IPC分类号： G08G1/14
CPC分类号： G08G1/14 , B60T2201/10 , B62D15/028 , B62D15/0285
摘要： A parking assist device includes a leading path generation judging device for judging whether an effective leading path to a target parking position is generated. According to the parking assist device, a parking assist for leading a vehicle to the target parking position is conducted in accordance with a judged result of the leading path generation judging device. The leading path generation judging device includes a first judging device for judging whether the leading path is generated when an initial steering angle of the vehicle is determined as a steering angle initial value, and a second judging device for judging whether the leading path is generated when a steering angle other than the initial steering angle is determined as the steering angle initial value in case it is judged that the leading path is not generated by the first judging device.
摘要翻译：停车辅助装置包括用于判断到目标停车位置的有效前导路径是否产生的前导路径生成判断装置。根据停车辅助装置，根据前导路径产生判断装置的判定结果，进行将车辆引导到目标停车位置的停车辅助。前导路径产生判断装置包括：第一判断装置，用于当车辆的初始转向角被确定为转向角初始值时判断是否产生前导路径;以及第二判断装置，用于判断是否产生前导路径在判断出不是由第一判断装置产生前导路径的情况下，确定除初始转向角之外的转向角作为转向角初始值。

42. 发明申请

US20060131608A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20060131608A1
公开(公告)日：2006-06-22
申请号：US11288117
申请日：2005-11-29
申请人： Toru Sugiyama
发明人： Toru Sugiyama
IPC分类号： H01L31/109 , H01L29/06
CPC分类号： H01L29/7304 , H01L27/0605 , H01L29/7371
摘要： Disclosed is a semiconductor device including an n+-type semiconductor layer formed on a substrate, a first n-type semiconductor layer formed on the n+-type semiconductor layer, a p-type semiconductor layer formed on the first n-type semiconductor layer and having a material having a first band gap, a second n-type semiconductor layer formed on the p-type semiconductor layer, being smaller than the p-type semiconductor layer in area and having a material having a second band gap larger than the first band gap, an implant portion formed to penetrate the p-type semiconductor layer, the first n-type semiconductor layer, and the n+-type semiconductor layer in a region where the second n-type semiconductor layer is not formed and to divide these layers into two regions, and an electrode formed on a region of the p-type semiconductor layer where the second n-type semiconductor layer is not formed, so as to bridge over the implant portion.
摘要翻译：公开了一种半导体器件，包括形成在衬底上的n + +型半导体层，形成在n + +型半导体层上的第一n型半导体层，形成在第一n型半导体层上并且具有第一带隙的材料的p型半导体层，形成在p型半导体层上的第二n型半导体层小于p型半导体层中的p型半导体层并且具有比第一带隙大的第二带隙的材料，形成为穿透p型半导体层，第一n型半导体层和n型半导体层的注入部分，在没有形成第二n型半导体层的区域中形成半导体层，并将这些层分成两个区域，以及形成在第二n型半导体层不是的p型半导体层的区域上的电极形成，以便桥接在植入部分上。

43. 发明申请

US20060081078A1 Electric actuator 有权
标题翻译：电动执行器
公开(公告)号：US20060081078A1
公开(公告)日：2006-04-20
申请号：US11203702
申请日：2005-08-15
申请人： Shigekazu Nagai , Akio Saitoh , Toru Sugiyama , Masaki Miyahara
发明人： Shigekazu Nagai , Akio Saitoh , Toru Sugiyama , Masaki Miyahara
IPC分类号： F16H27/02
CPC分类号： F16H25/2015 , F16H25/2204 , F16H2025/2075 , Y10T74/18576 , Y10T74/1868 , Y10T74/18688
摘要： Disclosed is an electric actuator capable of effectively absorbing shock exerted on its component part. The electric actuator has a housing, a rod cover, a piston, a feed screw, a sliding nut, two piston dampers for absorbing shock exerted on the piston, a first end damper attached to one of the opposite ends of the housing, a second end damper attached to the rod cover. The sliding nut is axially displaceable relative to the piston when the piston damper absorbs shock.
摘要翻译：公开了能够有效地吸收施加在其部件上的冲击的电致动器。电致动器具有壳体，杆盖，活塞，进给螺杆，滑动螺母，用于吸收施加在活塞上的冲击的两个活塞阻尼器，附接到壳体的相对端中的一个的第一端阻尼器，第二末端阻尼器连接到杆盖。当活塞阻尼器吸收冲击时，滑动螺母可相对于活塞轴向移动。

44. 发明申请

US20050275076A1 Semiconductor apparatus and method of manufacturing same, and method of detecting defects in semiconductor apparatus 失效
标题翻译：半导体装置及其制造方法，以及半导体装置的缺陷检测方法
公开(公告)号：US20050275076A1
公开(公告)日：2005-12-15
申请号：US11148331
申请日：2005-06-09
申请人： Masayuki Sugiura , Yasuhiko Kuriyama , Toru Sugiyama , Yoshikazu Tanabe , Makoto Shibamiya
发明人： Masayuki Sugiura , Yasuhiko Kuriyama , Toru Sugiyama , Yoshikazu Tanabe , Makoto Shibamiya
IPC分类号： H01L21/60 , H01L23/495 , H01L23/544
CPC分类号： H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor apparatus comprising: a semiconductor substrate having a device region and a periphery region surrounding the device region; a semiconductor device provided in the device region of the semiconductor substrate; a first electrode pad provided on the semiconductor substrate; a second electrode pad provided on the semiconductor substrate; a strip-like, first conductivity type semiconductor pattern; and a strip-like, second conductivity type semiconductor pattern. The strip-like, first conductivity type semiconductor pattern extends in the periphery region of the semiconductor substrate, and the first electrode pad is electrically connected to one end of the first conductivity type semiconductor pattern. The strip-like, second conductivity type semiconductor pattern constitutes a p-n junction in conjunction with the first conductivity type semiconductor pattern. The first and second electrode pads are electrically connected to both ends of the second conductivity type semiconductor pattern.
摘要翻译：一种半导体装置，包括：半导体衬底，具有围绕所述器件区域的器件区域和周边区域; 半导体器件，设置在所述半导体衬底的器件区域中; 设置在所述半导体基板上的第一电极焊盘; 设置在所述半导体衬底上的第二电极焊盘; 带状，第一导电型半导体图案; 和带状的第二导电型半导体图案。带状第一导电型半导体图案在半导体衬底的周边区域中延伸，并且第一电极焊盘电连接到第一导电类型半导体图案的一端。带状，第二导电型半导体图案与第一导电型半导体图案一起构成p-n结。第一和第二电极焊盘电连接到第二导电类型半导体图案的两端。

45. 发明申请

US20050049766A1 Vehicle backward movement assist device and vehicle parking assist device 有权
标题翻译：车辆后退辅助装置和车辆驻车辅助装置
公开(公告)号：US20050049766A1
公开(公告)日：2005-03-03
申请号：US10927051
申请日：2004-08-27
申请人： Yuu Tanaka , Yoshifumi Iwata , Hisashi Satonaka , Tomohiko Endo , Yuichi Kubota , Akira Matsui , Hideyuki Iwakiri , Toru Sugiyama , Seiji Kawakami , Katsuhiko Iwazaki , Hiroaki Kataoka
发明人： Yuu Tanaka , Yoshifumi Iwata , Hisashi Satonaka , Tomohiko Endo , Yuichi Kubota , Akira Matsui , Hideyuki Iwakiri , Toru Sugiyama , Seiji Kawakami , Katsuhiko Iwazaki , Hiroaki Kataoka
IPC分类号： B60R21/00 , B62D15/02 , G08G1/16 , H04N1/387 , G06F17/00
CPC分类号： B62D15/0285 , B60T2201/10
摘要： A vehicle backward movement assist device includes an image capturing means for capturing an image of an outside area in back of a vehicle, a parking mode judging means for judging whether a parking mode by reversing of the vehicle is a back-in parking or a parallel parking, a target parking position inputting means for setting a target parking position where the vehicle is parked based on the parking mode determined by the parking mode judging means, and a displaying means for displaying the image captured by the image capturing means and superimposedly displaying the target parking position set by the target parking position inputting means on the captured image so as to guide the vehicle to the target parking position.
摘要翻译：车辆后退辅助装置包括用于拍摄车辆后方的外部区域的图像的图像捕获装置;停车模式判断装置，用于判断车辆的倒车的停车模式是后退停车还是并行停车，目标停车位置输入装置，用于根据由停车模式判断装置确定的停车模式来设定车辆停放的目标停车位置;以及显示装置，用于显示由图像捕获装置拍摄的图像，并且叠加地显示由目标停车位置输入装置设定的目标停车位置，以将车辆引导到目标停车位置。

46. 发明申请

US20050027414A1 Driving assist apparatus and method for vehicle 有权
标题翻译：车辆辅助装置和方法
公开(公告)号：US20050027414A1
公开(公告)日：2005-02-03
申请号：US10871010
申请日：2004-06-21
申请人： Katsuhiko Iwazaki , Hisashi Satonaka , Yuichi Kubota , Tomohiko Endo , Akira Matsui , Hideyuki Iwakiri , Toru Sugiyama , Seiji Kawakami , Hiroaki Kataoka , Yuu Tanaka , Yoshifumi Iwata
发明人： Katsuhiko Iwazaki , Hisashi Satonaka , Yuichi Kubota , Tomohiko Endo , Akira Matsui , Hideyuki Iwakiri , Toru Sugiyama , Seiji Kawakami , Hiroaki Kataoka , Yuu Tanaka , Yoshifumi Iwata
IPC分类号： B60R21/00 , B60R1/00 , B62D6/00 , B62D15/02 , B62D101/00 , B62D113/00 , B62D137/00 , G01C21/34 , G08G1/16 , G06F19/00
CPC分类号： B62D15/0285 , B60R1/00 , B60R2300/301 , B60R2300/302 , B60R2300/305 , B60R2300/806 , B60R2300/8086 , B60T2201/10
摘要： A driving assist apparatus for a vehicle which calculates a path by an algorithm suitable for real-time path calculation in a vehicle-installed computing device is provided. A basic path that changes the deflection angle of the vehicle to 0 is computed from an initial vehicle position. From the basic path, a target path is computed, for example, by adding straight-line paths to the two opposite ends of the basic path. On the basis of the target path, a driving assist is performed. During the driving assist, a basic path is re-calculated. If it is determined that a similarity-enlarged path obtained through similarity enlargement of the basic path can be used to reach the target position point, a target path is re-set on the basis of the similarity-enlarged path. Then a driving assist is performed on the basis of the re-set target path.
摘要翻译：提供了一种用于通过适用于车载计算设备中的实时路径计算的算法计算路径的车辆驾驶辅助装置。从初始车辆位置计算将车辆的偏转角度改变为0的基本路径。从基本路径，例如通过向基本路径的两个相对端添加直线路径来计算目标路径。在目标路径的基础上，进行驾驶辅助。驾驶辅助期间，重新计算基本路径。如果确定可以使用通过基本路径的相似放大获得的相似放大路径到达目标位置点，则基于相似放大路径重新设置目标路径。然后，基于重新设定的目标路径进行驾驶辅助。

47. 发明授权

US06790694B2 High frequency semiconductor module, high frequency semiconductor device and manufacturing method for the same 失效
标题翻译：高频半导体模块，高频半导体器件及其制造方法相同
公开(公告)号：US06790694B2
公开(公告)日：2004-09-14
申请号：US10281231
申请日：2002-10-28
申请人： Toru Sugiyama , Kouhei Morizuka , Masayuki Sugiura , Yasuhiko Kuriyama , Yoshikazu Tanabe
发明人： Toru Sugiyama , Kouhei Morizuka , Masayuki Sugiura , Yasuhiko Kuriyama , Yoshikazu Tanabe
IPC分类号： H01L2192
CPC分类号： H01L24/05 , H01L21/78 , H01L23/488 , H01L23/564 , H01L23/66 , H01L24/03 , H01L24/06 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2223/6644 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/48624 , H01L2224/48644 , H01L2224/73265 , H01L2224/85444 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01031 , H01L2924/01047 , H01L2924/01067 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/05042 , H01L2924/10157 , H01L2924/10161 , H01L2924/10329 , H01L2924/1305 , H01L2924/1306 , H01L2924/13063 , H01L2924/13064 , H01L2924/14 , H01L2924/1423 , H01L2924/18301 , H01L2924/30107 , H01L2924/3011 , H01L2924/00014 , H01L2924/01033 , H01L2924/00 , H01L2924/00012
摘要： A high frequency semiconductor module, includes: a semiconductor chip having top and bottom surfaces; a semiconductor element merged in the semiconductor chip; a ground pad of the semiconductor element disposed on the top surface; a metal layer configured to connect to the ground pad and extend to sidewalls of the semiconductor chip; a ground metal arranged on a surface of a mounting substrate; and a conductive material formed on the ground, configured to connect the metal layer and the ground metal.
摘要翻译：高频半导体模块包括：具有顶表面和底表面的半导体芯片; 半导体元件合并在半导体芯片中; 所述半导体元件的接地焊盘设置在所述顶面上; 金属层，被配置为连接到所述接地焊盘并延伸到所述半导体芯片的侧壁; 布置在安装基板的表面上的接地金属; 以及形成在地面上的导电材料，被配置为连接金属层和接地金属。

48. 发明授权

US5234386A Actuator and actuator arrangement 失效
标题翻译：执行器和执行器装置
公开(公告)号：US5234386A
公开(公告)日：1993-08-10
申请号：US922986
申请日：1992-07-31
申请人： Shigekazu Nagai , Akio Saitoh , Toru Sugiyama , Masahisa Hasegawa
发明人： Shigekazu Nagai , Akio Saitoh , Toru Sugiyama , Masahisa Hasegawa
IPC分类号： B23Q1/56 , B23Q37/00
CPC分类号： B23Q1/56 , B23Q37/00 , F16H19/0622 , F16H2019/0686 , F16H2025/2034 , F16H2025/204 , F16H2025/2075 , F16H25/2204 , Y10T403/341 , Y10T403/345 , Y10T74/18648 , Y10T74/1884 , Y10T74/20354
摘要： Disclosed is an actuator having a frame in which a drive source and a slider displaced under the action of the drive source are held, and an actuator arrangement comprising a plurality of actuators connected to each other by connecting devices. A beam member, which constitutes the frame, has a concave portion defined in a side thereof and the drive source is held in the concave portion. A slider base is held in the concave portion and includes the slider displaced along the concave portion. A cover is used to cover the concave portion defined in the beam member. The beam member has grooves defined in respective outer sides thereof, which have substantially T-shaped cross sections and enable other beam members to be mounted to the beam member. The grooves are defined along the longitudinal direction thereof so as to be substantially identical in structure to one another. According to the above construction, either other beam members or the actuators can be connected to one another by means of the grooves so as to assemble a desired actuator arrangement having a desired shape, thereby making it possible to place the actuator arrangement on a production line in a factory.

49. 发明申请

US20120241751A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20120241751A1
公开(公告)日：2012-09-27
申请号：US13238666
申请日：2011-09-21
申请人： Akira YOSHIOKA , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Wataru Saito , Toru Sugiyama
发明人： Akira YOSHIOKA , Yasunobu Saito , Hidetoshi Fujimoto , Tetsuya Ohno , Wataru Saito , Toru Sugiyama
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L29/7787 , H01L23/3171 , H01L29/0661 , H01L29/2003 , H01L29/402 , H01L29/41758 , H01L29/4236 , H01L29/66462 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a third electrode, a first insulating film and a second insulating film. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer is provided on the first layer, includes a nitride semiconductor, and includes a hole. The first electrode is provided in the hole. The second electrode is provided on the second layer. The third electrode is provided on the second layer so that the first electrode is disposed between the third and second electrodes. The first insulating film is provided between the first electrode and an inner wall of the hole and between the first and second electrodes, and is provided spaced from the third electrode. The second insulating film is provided in contact with the second layer between the first and third electrodes.
摘要翻译：根据一个实施例，氮化物半导体器件包括第一半导体层，第二半导体层，第一电极，第二电极，第三电极，第一绝缘膜和第二绝缘膜。第一半导体层包括氮化物半导体。第二半导体层设置在第一层上，包括氮化物半导体，并且包括孔。第一电极设置在孔中。第二电极设置在第二层上。第三电极设置在第二层上，使得第一电极设置在第三和第二电极之间。第一绝缘膜设置在第一电极和孔的内壁之间以及第一和第二电极之间，并且与第三电极间隔设置。第二绝缘膜设置成与第一和第三电极之间的第二层接触。

50. 发明授权

US08110248B2 Fuel cell structure and method of manufacturing same 有权
标题翻译：燃料电池结构及其制造方法
公开(公告)号：US08110248B2
公开(公告)日：2012-02-07
申请号：US11884234
申请日：2006-02-14
申请人： Masaru Hori , Mineo Hiramatsu , Hiroyuki Kano , Satoshi Yoshida , Yukihisa Katayama , Toru Sugiyama
发明人： Masaru Hori , Mineo Hiramatsu , Hiroyuki Kano , Satoshi Yoshida , Yukihisa Katayama , Toru Sugiyama
IPC分类号： H01M4/96
CPC分类号： H01M8/0234 , H01M4/8817 , H01M4/96 , H01M2008/1095 , Y02P70/56
摘要： A fuel cell structure comprises a diffusion layer and/or a catalyst layer which are made of a carbonaceous porous material having a nano-size structure, such as carbon nanowall (CNW). A method of manufacturing the structure is also disclosed. The structure and method simplify the process of manufacturing a fuel cell electrode comprised of an electrode catalyst layer and a gas diffusion layer. The electrical conductivity of the catalyst layer is increased and the diffusion efficiency of the diffusion layer is improved, whereby the electricity generation efficiency of the fuel cell can be improved.
摘要翻译：燃料电池结构包括由具有纳米尺寸结构的碳质多孔材料（例如碳纳米壁（CNW））制成的扩散层和/或催化剂层。还公开了一种制造该结构的方法。该结构和方法简化了制造由电极催化剂层和气体扩散层组成的燃料电池电极的工艺。催化剂层的导电性提高，扩散层的扩散效率提高，能够提高燃料电池的发电效率。

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