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41. 发明授权

US08119530B2 Pattern forming method and semiconductor device manufacturing method 有权
标题翻译：图案形成方法和半导体器件制造方法
公开(公告)号：US08119530B2
公开(公告)日：2012-02-21
申请号：US12521184
申请日：2007-12-20
申请人： Masaru Hori , Yoshiro Kabe , Toshihiko Shiozawa , Junichi Kitagawa
发明人： Masaru Hori , Yoshiro Kabe , Toshihiko Shiozawa , Junichi Kitagawa
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31662 , H01L21/02238 , H01L21/02252 , H01L21/30604 , H01L21/3065 , H01L21/31111 , H01L21/31116 , H01L29/66818
摘要： A pattern forming method includes preparing a target object including silicon with an initial pattern formed thereon and having a first line width; performing a plasma oxidation process on the silicon surface inside a process chamber of a plasma processing apparatus and thereby forming a silicon oxide film on a surface of the initial pattern; and removing the silicon oxide film. The pattern forming method is arranged to repeatedly perform formation of the silicon oxide film and removal of the silicon oxide film so as to form an objective pattern having a second line width finer than the first line width on the target object.
摘要翻译：图案形成方法包括制备包括硅的目标物体，其中形成有初始图案并具有第一线宽度; 在等离子体处理装置的处理室内的硅表面上进行等离子体氧化处理，由此在初始图案的表面上形成氧化硅膜; 并除去氧化硅膜。图案形成方法被配置为反复进行氧化硅膜的形成和氧化硅膜的去除，以形成目标物体上具有比第一线宽窄的第二线宽的物镜图案。

42. 发明授权

US08026187B2 Method of forming silicon oxide film and method of production of semiconductor memory device using this method 有权
标题翻译：使用该方法形成氧化硅膜的方法和半导体存储器件的制造方法
公开(公告)号：US08026187B2
公开(公告)日：2011-09-27
申请号：US12550788
申请日：2009-08-31
申请人： Yoshiro Kabe , Junichi Kitagawa , Kikuo Yamabe
发明人： Yoshiro Kabe , Junichi Kitagawa , Kikuo Yamabe
IPC分类号： H01L21/00 , H01L21/76
CPC分类号： H01L21/31662 , H01L21/02238 , H01L21/02252 , H01L21/02337 , H01L21/31654 , H01L21/67115 , H01L29/4234 , H01L29/513 , H01L29/7881 , H01L29/792
摘要： To form a good quality silicon oxide film provided with both a superior Qbd characteristic and Rd characteristic, a wafer W is loaded into a plasma treatment apparatus where the surface of a silicon layer 501 of the wafer W is treated by plasma oxidation to form on the silicon layer 501 to a film thickness T1 a silicon oxide film 503. Next, the wafer W on which the silicon oxide film 503 is formed is transferred to a thermal oxidation treatment apparatus where the silicon oxide film 503 is treated by thermal oxidation to thereby form a silicon oxide film 505 having a target film thickness T2.
摘要翻译：为了形成具有优异的Qbd特性和Rd特性的优质氧化硅膜，将晶片W装载到等离子体处理装置中，其中通过等离子体氧化处理晶片W的硅层501的表面以形成在硅层501形成膜厚T1，形成氧化硅膜503.接着，将形成有氧化硅膜503的晶片W转移到热氧化处理装置中，通过热氧化处理氧化硅膜503，形成具有目标膜厚度T2的氧化硅膜505。

43. 发明授权

US07989364B2 Plasma oxidation processing method 有权
标题翻译：等离子体氧化处理方法
公开(公告)号：US07989364B2
公开(公告)日：2011-08-02
申请号：US12439019
申请日：2007-08-27
申请人： Masaru Hori , Toshihiko Shiozawa , Yoshiro Kabe , Junichi Kitagawa
发明人： Masaru Hori , Toshihiko Shiozawa , Yoshiro Kabe , Junichi Kitagawa
IPC分类号： H01L21/469
CPC分类号： H01L21/31662 , C23C8/10 , C23C8/36 , H01L21/02238 , H01L21/02252 , H01L22/20
摘要： A plasma oxidation process is performed to form a silicon oxide film on the surface of a target object by use of plasma with an O(1D2) radical density of 1×1012 [cm−3] or more generated from a process gas containing oxygen inside a process chamber of a plasma processing apparatus. During the plasma oxidation process, the O(1D2) radical density in the plasma is measured by a VUV monochromator 63, and a correction is made to the plasma process conditions.
摘要翻译：进行等离子体氧化处理，通过使用从含有氧气的工艺气体产生的O（1D2）自由基密度为1×10 12 [cm -3]以上的等离子体，在目标物体的表面上形成氧化硅膜等离子体处理装置的处理室。在等离子体氧化过程中，通过VUV单色仪63测量等离子体中的O（1D2）自由基密度，并对等离子体处理条件进行校正。

44. 发明申请

US20110174441A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20110174441A1
公开(公告)日：2011-07-21
申请号：US13075557
申请日：2011-03-30
申请人： Jun YAMASHITA , Kazuhiro Isa , Hideo Nakamura , Junichi Kitagawa
发明人： Jun YAMASHITA , Kazuhiro Isa , Hideo Nakamura , Junichi Kitagawa
IPC分类号： H01L21/3065 , C23C16/511
CPC分类号： H01J37/32559 , C23C16/4404 , C23C16/45565 , C23C16/5096 , H01J37/32192
摘要： Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a Y2O3 film. A second portion forming an upper side portion of the processing chamber and a first portion forming a lower side portion of the processing container are provided with an insulating upper liner and an insulating lower liner thicker than the upper liner, respectively. Thus, undesirable short-circuits and abnormal electrical discharge are prevented and stable high-frequency current path is formed.
摘要翻译：提供了一种等离子体处理装置，其中嵌入在安装台中的电极被提供用于偏置的高频功率。暴露于等离子体并且是作为与安装台的电极相对的电极的铝盖的表面涂覆有保护膜，优选Y 2 O 3膜。形成处理室的上侧部分的第二部分和形成处理容器的下侧部分的第一部分分别设置有比上部衬套更厚的绝缘上衬垫和绝缘下衬套。因此，防止了不期望的短路和异常放电，并且形成稳定的高频电流路径。

45. 发明申请

US20110017586A1 Method for forming silicon oxide film, storage medium, and plasma processing apparatus 审中-公开
标题翻译：形成氧化硅膜，存储介质和等离子体处理装置的方法
公开(公告)号：US20110017586A1
公开(公告)日：2011-01-27
申请号：US12805301
申请日：2010-07-22
申请人： Hideo Nakamura , Yoshiro Kabe , Junichi Kitagawa
发明人： Hideo Nakamura , Yoshiro Kabe , Junichi Kitagawa
IPC分类号： H01L21/02 , B05C5/02
CPC分类号： H01L27/11521 , H01J37/32192 , H01J37/3222 , H01L21/02238 , H01L21/28211 , H01L21/31662 , H01L21/32105 , H01L21/76235 , H01L21/823468 , H01L29/42372 , H01L29/7881
摘要： In oxidation of a silicon having irregularities, a silicon oxide film having a thickness as small as possible is formed in the side wall as compared with the bottom. A plasma is generated, using a plasma processing apparatus (100) which introduces microwave into a chamber (1) through a plane antenna (31) having plural microwave radiating holes (32), while applying a high-frequency power to a stage (2), under the conditions that the proportion of oxygen in the processing gas is in the range of 0.1 to 50% and the processing pressure is in the range of 1.3 to 667 Pa. By using this plasma, the ratio of the thickness of the silicon oxide film formed on the side wall surfaces of the irregularities to the thickness of the silicon oxide film formed on the bottom wall surfaces of the recessed portions of the irregularities is made not more than 0.6, while the thickness of the silicon oxide films formed on the bottom wall surfaces is not less than 6 nm and not more than 20 nm.
摘要翻译：在具有凹凸的硅的氧化中，与底部相比，在侧壁中形成厚度尽可能小的氧化硅膜。使用等离子体处理装置（100）等离子体，其通过具有多个微波辐射孔（32）的平面天线（31）将微波引入室（1），同时向载物台（2）施加高频电力），处理气体中的氧的比例为0.1〜50％，处理压力为1.3〜667Pa的范围的条件下，通过使用该等离子体，硅的厚度形成在不规则部分的侧壁表面上的氧化膜与形成在凹凸部的凹部的底壁表面上的氧化硅膜的厚度成比例不大于0.6，而形成在氧化硅膜上的氧化硅膜的厚度底壁面不小于6nm且不大于20nm。

46. 发明授权

US07875322B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07875322B2
公开(公告)日：2011-01-25
申请号：US11794894
申请日：2006-01-05
申请人： Takashi Kobayashi , Shingo Furui , Junichi Kitagawa
发明人： Takashi Kobayashi , Shingo Furui , Junichi Kitagawa
IPC分类号： C23C16/511
CPC分类号： C23C8/36 , H01J37/32192 , H01J37/32935 , H01L21/02238 , H01L21/02252 , H01L21/31662
摘要： Pulsated microwaves are supplied to a wave guide tube from a microwave generation unit through a matching circuit. The microwaves are supplied through an inner conductor to a planar antenna member. The microwaves are radiated from the planar antenna member through a microwave transmission plate into space above a wafer within a chamber. An electromagnetic field is formed in the chamber by pulsated microwaves radiated into the chamber from the planar antenna member through the microwave transmission plate, turning an Ar gas, H2 gas and O2 gas into plasma to form an oxide film on the wafer.
摘要翻译：脉冲微波通过匹配电路从微波产生单元提供给波导管。微波通过内部导体提供给平面天线构件。微波从平面天线构件通过微波传输板辐射到室内的晶片上方的空间中。通过从平面天线构件通过微波传输板辐射到室中的脉动微波在室内形成电磁场，将Ar气体，H 2气体和O 2气体转化成等离子体，以在晶片上形成氧化膜。

47. 发明申请

US20100291319A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20100291319A1
公开(公告)日：2010-11-18
申请号：US12680645
申请日：2008-09-29
申请人： Jun Yamashita , Yoshiro Kabe , Junichi Kitagawa
发明人： Jun Yamashita , Yoshiro Kabe , Junichi Kitagawa
IPC分类号： C23C16/511 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/32495
摘要： A plasma processing apparatus for plasma-processing a target substrate is provided. The plasma processing apparatus includes a metallic processing container forming a processing space in which a plasma process is performed, and a substrate mounting table provided in the processing space to mount a target substrate thereon, a quartz member which shields a sidewall of the metallic processing container from the processing space and whose lower end extends to a position lower than a substrate mounting surface of the substrate mounting table, an annular member which is made of quartz and is provided between a bottom surface of the quartz member and a bottom wall of the metallic processing container to shield the bottom wall of the metallic processing container from the processing space, and a processing gas inlet part for introducing a processing gas into the processing space from a vicinity of an outer periphery of the substrate mounting table.
摘要翻译：提供了一种用于等离子体处理目标衬底的等离子体处理装置。等离子体处理装置包括形成进行等离子体处理的处理空间的金属处理容器和设置在处理空间中的用于将目标基板安装在其上的基板安装台，屏蔽金属处理容器的侧壁的石英构件从所述处理空间的下端延伸到比所述基板安装台的基板安装面低的位置的环状部件，所述环状部件由石英制成，并且设置在所述石英部件的底面与所述金属处理容器，用于将金属处理容器的底壁与处理空间隔离;以及处理气体入口部，用于将处理气体从基板安装台的外周附近引入处理空间。

48. 发明授权

US07807234B2 Plasma processing method, plasma processing apparatus, and computer recording medium 失效
标题翻译：等离子体处理方法，等离子体处理装置和计算机记录介质
公开(公告)号：US07807234B2
公开(公告)日：2010-10-05
申请号：US11197554
申请日：2005-08-05
申请人： Junichi Kitagawa
发明人： Junichi Kitagawa
IPC分类号： C23C16/511
CPC分类号： H01L21/02249 , C23C8/02 , C23C8/28 , C23C8/34 , C23C8/36 , C30B33/005 , H01L21/0214 , H01L21/02252 , H01L21/3144
摘要： According to the present invention, plasma oxidation processing and plasma nitridation processing are applied at the same time to the surface of a semiconductor substrate by plasma using a microwave. After forming an insulating film by the plasma oxynitridation processing as described above, the plasma nitridation processing is further applied to the insulating film as necessary. Thereby, it is possible to form the insulating film with an excellent electrical characteristic.
摘要翻译：根据本发明，通过使用微波的等离子体，等离子体氧化处理和等离子体氮化处理同时施加到半导体衬底的表面。在通过如上所述的等离子体氧氮化处理形成绝缘膜之后，根据需要进一步将绝缘膜应用等离子体氮化处理。由此，可以形成具有优异的电气特性的绝缘膜。

49. 外观设计

USD571833S1 Top panel for microwave introduction window of plasma processing apparatus 有权
标题翻译：等离子体处理装置微波介绍窗口顶板
公开(公告)号：USD571833S1
公开(公告)日：2008-06-24
申请号：US29252840
申请日：2006-01-30
申请人： Kinya Ota , Cai Zhong Tian , Junichi Kitagawa
设计人： Kinya Ota , Cai Zhong Tian , Junichi Kitagawa

50. 发明申请

US20080035058A1 Plasma Processing Unit 有权
标题翻译：等离子处理单元
公开(公告)号：US20080035058A1
公开(公告)日：2008-02-14
申请号：US11632779
申请日：2005-07-21
申请人： Caizhong Tian , Kiyotaka Ishibashi , Junichi Kitagawa , Toshihisa Nozawa
发明人： Caizhong Tian , Kiyotaka Ishibashi , Junichi Kitagawa , Toshihisa Nozawa
IPC分类号： H05H1/46 , H01L21/205 , H01L21/3065
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32211
摘要： The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.
摘要翻译：本发明提供一种等离子体处理单元，包括：处理容器，其顶部具有开口，能够在其中产生真空; 设置在处理容器中的用于在其上放置待处理物体的台阶; 由电介质制成的顶板，顶板气密地装配在开口中并允许微波通过; 平面天线部件，其设置在所述顶板上，所述平面天线部件设置有多个微波辐射孔，用于向所述处理容器的内部放射用于等离子体产生的微波; 设置在所述平面天线构件上的慢波构件，用于缩短微波的波长; 以及微波干扰抑制部，其设置在所述顶板的下表面上，所述微波干涉抑制部将所述下表面分割为多个同心区域，并抑制所述区域之间的微波干扰。

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