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41. 发明申请

US20060229075A1 Supporting handover of mobile terminal 有权
公开(公告)号：US20060229075A1
公开(公告)日：2006-10-12
申请号：US11399738
申请日：2006-04-07
申请人： Yong Kim , Yong Kwak , Jin Lee
发明人： Yong Kim , Yong Kwak , Jin Lee
IPC分类号： H04Q7/20 , H04Q7/00
CPC分类号： H04W36/005
摘要： The present invention relates to supporting a handover of a mobile terminal. Preferably, the present invention performs a scan of a neighboring network different from a current network of the mobile terminal to determine the presence of an accessible link of the neighboring network for performing a handover, wherein the mobile terminal comprises a heterogeneous network handover module that is configured to provide convergence of information from at least one network interface module associated with one of a homogeneous and heterogeneous network into a unified presentation. An information message is then received from the neighboring network, wherein the information message comprises an information element associated with whether the neighboring network is capable of communicating with the heterogeneous network handover module of the mobile terminal.

42. 发明申请

US20060112980A1 Apparatus and method for treating surfaces of semiconductor wafers using ozone 失效
公开(公告)号：US20060112980A1
公开(公告)日：2006-06-01
申请号：US11335948
申请日：2006-01-20
申请人： In Jeong , Yong Kim , Jungyup Kim
发明人： In Jeong , Yong Kim , Jungyup Kim
IPC分类号： B08B3/00
CPC分类号： H01L21/02046 , B08B3/02 , B08B3/08 , B08B2203/005 , H01L21/02238 , H01L21/31662 , H01L21/67051
摘要： An apparatus and method for treating surfaces of semiconductor wafers with a reactive gas, such as ozone, utilizes streams of gaseous material ejected from a gas nozzle structure to create depressions on or holes through a boundary layer of processing fluid formed on a semiconductor wafer surface to increase the amount of reactive gas that reaches the wafer surface through the boundary layer. The apparatus and method may be used to clean a semiconductor wafer surface and/or grow an oxide layer on the wafer surface by oxidation.

43. 发明申请

US20060095258A1 Apparatus for separating blind source signals having systolic array structure 失效
标题翻译：用于分离具有收缩阵列结构的盲源信号的装置
公开(公告)号：US20060095258A1
公开(公告)日：2006-05-04
申请号：US10989430
申请日：2004-11-17
申请人： Hong Jeong , Yong Kim
发明人： Hong Jeong , Yong Kim
IPC分类号： G10L15/20
CPC分类号： G10L21/028 , G06K9/624
摘要： Disclosed is a hardware architecture receiving multi-input blind source signals and obtaining multi-output. An apparatus for separating blind source signals includes: a forward process unit receiving a plurality of blind source signal vectors and outputting a plurality of output signal vectors by using a predetermined blind source separation algorithm; an update process unit receiving the plurality of output signal vectors and learning first weighting values used for the predetermined blind source separation algorithm according to a predetermined learning algorithm; and a weight process unit having a matrix operation structure for receiving the first weighting values and converting them into coefficients and second weighting values applicable to the predetermined blind source separation algorithm. The forward process unit includes (L+1) identical processing elements connected in a systolic array structure, where L is the number of sequential delay of blind input signal vectors. The update process unit includes (N2+N)/2×(2L+1) identical updating elements connected in a systolic array structure, where N is the number of the blind input signal vectors. Each cost of the processing elements and the updating elements is initialized by 0 in an initial operation stage.
摘要翻译：公开了一种接收多输入盲源信号并获得多输出的硬件架构。一种用于分离盲源信号的装置包括：前向处理单元，接收多个盲源信号向量，并通过使用预定的盲源分离算法输出多个输出信号向量; 更新处理单元，根据预定的学习算法，接收多个输出信号矢量和学习用于预定盲源分离算法的第一加权值; 以及加权处理单元，具有用于接收第一加权值并将其转换成适用于预定盲源分离算法的系数和第二加权值的矩阵运算结构。前向处理单元包括（L + 1）以脉冲阵列结构连接的相同的处理元件，其中L是盲输入信号矢量的顺序延迟的数量。更新处理单元包括以收缩阵列结构连接的（N 2+ N +）/ 2x（2L + 1）相同的更新元件，其中N是盲输入信号矢量的数量。在初始操作阶段，处理元件和更新元件的每个成本被初始化为0。

44. 发明申请

US20060032149A1 Polishing slurry, method of producing same, and method of polishing substrate 审中-公开
标题翻译：抛光浆料，其制造方法以及抛光底物的方法
公开(公告)号：US20060032149A1
公开(公告)日：2006-02-16
申请号：US11193094
申请日：2005-07-28
申请人： Dae Kim , Seok Hong , Jae Jeon , Un Paik , Jea Park , Yong Kim
发明人： Dae Kim , Seok Hong , Jae Jeon , Un Paik , Jea Park , Yong Kim
IPC分类号： C09K3/14 , B24D3/02 , C09C1/68
CPC分类号： B82Y30/00 , C01F17/0043 , C01P2004/52 , C01P2004/64 , C01P2006/12 , C01P2006/22 , C09G1/02 , C09K3/1463
摘要： Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.
摘要翻译：公开了一种抛光浆料，特别是用于化学机械抛光的浆料，其用于化学机械抛光工艺以使半导体层压体变平。更具体地说，本发明提供一种制备浆料的方法，该方法对于在制造256兆D-RAM或更高的超高度集成半导体所需的浅沟槽隔离CMP工艺中，对用作阻挡膜的氮化物层具有高的去除选择性（设计规则为0.13μm以下），并且减少了在平坦化表面上的划痕的发生，以及使用其抛光衬底的方法。

45. 发明授权

US06989510B2 Non-copper-plated solid wire for carbon dioxide gas shielded arc welding 失效
标题翻译：用于二氧化碳气体保护电弧焊的非镀铜实心线
公开(公告)号：US06989510B2
公开(公告)日：2006-01-24
申请号：US10379060
申请日：2003-03-04
申请人： Yukio Yamaoka , Geun Chul Song , Yong Kim
发明人： Yukio Yamaoka , Geun Chul Song , Yong Kim
IPC分类号： B23K35/02
CPC分类号： B23K35/40 , B23K35/0261 , C21D8/06
摘要： A non-copper-plated solid wire for CO2 gas shielded arc welding. The non-copper-plated solid wire for CO2 gas shielded arc welding with excellent feedability ensures a reduced amount of generated spatters when welded at a relatively low current area, resulting from controlling the ten point average roughness (Rz) of the wire surface to 0.10 to 9.00 μm and the Vickers micro-hardness of the wire surface (Hv(1g)) to 125 to 310. Therefore, the welding operation can be carried out with a high efficiency to produce a weld of good quality.
摘要翻译：一种用于CO 2气保护电弧焊的非镀铜实心线。用于具有优异进给能力的CO 2气保护电弧焊的非镀铜实心线确保了在相对较低电流区域焊接时产生的溅射量减少，这是由于控制十点平均粗糙度（ Rz）为0.10〜9.00μm，线表面的维氏显微硬度（Hv（1g））为125〜310。因此，可以高效率地进行焊接操作，以产生焊接高品质。

46. 发明申请

US20060011297A1 Semiconductor manufacturing apparatus 审中-公开
标题翻译：半导体制造装置
公开(公告)号：US20060011297A1
公开(公告)日：2006-01-19
申请号：US11181526
申请日：2005-07-14
申请人： Yong Kim
发明人： Yong Kim
IPC分类号： C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H01L21/67167 , H01L21/67184
摘要： Disclosed herein is a semiconductor manufacturing apparatus. The apparatus comprises a transfer module, first and second process modules equipped to adjacent first and second faces of the transfer module while defining an acute angle to the first and second faces of the transfer module, respectively, and a load-lock chamber connected to a third face of the transfer module. The adjacent process modules are disposed parallel to each other. As such, the process modules are close to or in contact with each other on the transfer module, thereby reducing an area occupied by the apparatus without reducing manufacturing efficiency. A source supply unit can be enlarged towards an adjacent face of the adjacent process modules, so that various source materials for forming semiconductor chips can be effectively supplied to the semiconductor manufacturing apparatus through the enlarged source supply unit.
摘要翻译：这里公开了一种半导体制造装置。该装置包括传送模块，第一和第二处理模块，其分别配置到传送模块的相邻的第一和第二面，同时分别限定与传送模块的第一和第二面的锐角，以及连接到传送模块的加载锁定室传输模块的第三面。相邻的处理模块彼此平行设置。这样，处理模块在传送模块上彼此接近或接触，从而减少了设备占用的面积而不降低制造效率。源极供给单元可以相对于相邻的处理模块的相邻面扩大，从而能够通过放大源供给单元将用于形成半导体芯片的各种源材料有效地供给到半导体制造装置。

47. 发明申请

US20050265709A1 Device for driving light emitting diode for flash of camera 失效
标题翻译：用于驱动相机闪光灯的发光二极管的装置
公开(公告)号：US20050265709A1
公开(公告)日：2005-12-01
申请号：US10935360
申请日：2004-09-08
申请人： Hyung Kim , Yong Kim
发明人： Hyung Kim , Yong Kim
IPC分类号： G03B7/17 , G03B15/02 , G03B15/03 , G03B15/05 , H01S3/00 , H04N5/225 , H04N101/00
CPC分类号： H04N5/2256 , G03B15/05 , G03B2215/0567 , H04N5/23241
摘要： Disclosed herein is a device for driving a LED for a flash of a camera, such as a digital camera or a camera of a mobile phone, which is capable of driving the LED in two modes to reduce power consumption. The LED drive device comprises the LED, a continuous low current driver for continuously supplying current which is lower than or equal to rated current of the LED to the LED, a high-current pulse driver for supplying current which is higher than the rated current of the LED to the LED for a predetermined period of time, and a mode selector for selecting one of the continuous low current driver and the high-current pulse driver to drive the LED. According to the present invention, it is possible to prevent unnecessary power consumption and deterioration of reliability of the LED, and obtain an image of brighter picture quality.
摘要翻译：这里公开了一种用于驱动诸如数字照相机或移动电话的照相机的照相机的闪光灯的LED的装置，其能够以两种模式驱动LED以降低功耗。 LED驱动装置包括LED，连续的低电流驱动器，用于连续向LED提供低于或等于LED的额定电流的电流;高电流脉冲驱动器，用于提供高于LED的额定电流的电流 LED到LED预定时间段，以及模式选择器，用于选择连续低电流驱动器和大电流脉冲驱动器之一来驱动LED。根据本发明，可以防止不必要的电力消耗和LED的可靠性的劣化，并且获得更亮的图像质量的图像。

48. 发明申请

US20050263783A1 Nitride semiconductor light-emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20050263783A1
公开(公告)日：2005-12-01
申请号：US10944745
申请日：2004-09-21
申请人： Jae Lee , Yong Kim , Je Kim
发明人： Jae Lee , Yong Kim , Je Kim
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： The present invention provides a nitride semiconductor light-emitting device comprising a first conductive nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer, and having at least one quantum well layer and at least one quantum barrier layer alternatively laminated; and a second conductive nitride semiconductor layer formed on the active layer, wherein at least one of the quantum well layer and quantum barrier layer in the active layer is doped with elemental Al in a concentration of less than 1%.
摘要翻译：本发明提供了一种氮化物半导体发光器件，其包括第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上并且具有至少一个量子阱层和至少一个量子势垒层交替叠层的有源层; 以及形成在有源层上的第二导电氮化物半导体层，其中有源层中的量子阱层和量子势垒层中的至少一个掺杂有浓度小于1％的元素Al。

49. 发明申请

US20050253978A1 Thin film transistor array substrate and fabricating method thereof 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20050253978A1
公开(公告)日：2005-11-17
申请号：US11019946
申请日：2004-12-23
申请人： Gee Sung Chae , Woo Hyun Kim , Yong Kim , Jin Kim
发明人： Gee Sung Chae , Woo Hyun Kim , Yong Kim , Jin Kim
IPC分类号： H01L29/786 , G02F1/1343 , G02F1/136
CPC分类号： G02F1/134363 , H01L27/124 , H01L27/1288
摘要： A thin film transistor array substrate includes a first conductive pattern group including a gate electrode of a thin film transistor and a gate line connected to the gate electrode; a semiconductor pattern defining a channel of the thin film transistor; a second conductive pattern group including source and drain electrodes of the thin film transistor and a data line crossing the gate line, a pixel area being defined by the data line crossing the gate line; a third conductive pattern group having a pixel electrode connected to the thin film transistor; and at least one dummy pattern disposed between at least one of the first to third conductive pattern groups and an adjacent one of the semiconductor patterns.
摘要翻译：薄膜晶体管阵列基板包括：第一导电图案组，其包括薄膜晶体管的栅电极和连接到栅电极的栅极线; 限定薄膜晶体管的沟道的半导体图案; 包括薄膜晶体管的源极和漏极的第二导电图案组和与栅极线交叉的数据线，像素区域由与栅极线交叉的数据线限定; 具有连接到薄膜晶体管的像素电极的第三导电图案组; 以及设置在所述第一至第三导电图案组中的至少一个与所述半导体图案中的相邻一个之间的至少一个虚设图案。

50. 发明申请

US20050198912A1 Polishing slurry, method of producing same, and method of polishing substrate 有权
标题翻译：抛光浆料，其制造方法以及抛光底物的方法
公开(公告)号：US20050198912A1
公开(公告)日：2005-09-15
申请号：US11078538
申请日：2005-03-11
申请人： Dae Kim , Seok Hong , Jae Jeon , Ho Kim , Hyun Park , Un Paik , Jae Park , Yong Kim
发明人： Dae Kim , Seok Hong , Jae Jeon , Ho Kim , Hyun Park , Un Paik , Jae Park , Yong Kim
IPC分类号： B24D3/02 , C08J3/14 , H01L21/304
CPC分类号： B24B37/044 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.
摘要翻译：本文公开了用于化学机械抛光的抛光浆料。抛光浆料包括抛光颗粒，其具有包括分离的精细和大的抛光颗粒峰的粒度分布。抛光浆料还包括中值粒径为50-150nm的抛光颗粒。本发明提供了具有最佳抛光粒度的浆料，其中抛光粒度被控制，并且通过改变浆料的生产条件，可用于制备具有精细设计规则的半导体。本发明还提供了研磨浆料及其制造方法，其中通过控制抛光粒度分布来确保理想的CMP去除速率和抑制刮痕，以及抛光基材的方法。

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