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1. 发明申请

US20060112980A1 Apparatus and method for treating surfaces of semiconductor wafers using ozone 失效
公开(公告)号：US20060112980A1
公开(公告)日：2006-06-01
申请号：US11335948
申请日：2006-01-20
申请人： In Jeong , Yong Kim , Jungyup Kim
发明人： In Jeong , Yong Kim , Jungyup Kim
IPC分类号： B08B3/00
CPC分类号： H01L21/02046 , B08B3/02 , B08B3/08 , B08B2203/005 , H01L21/02238 , H01L21/31662 , H01L21/67051
摘要： An apparatus and method for treating surfaces of semiconductor wafers with a reactive gas, such as ozone, utilizes streams of gaseous material ejected from a gas nozzle structure to create depressions on or holes through a boundary layer of processing fluid formed on a semiconductor wafer surface to increase the amount of reactive gas that reaches the wafer surface through the boundary layer. The apparatus and method may be used to clean a semiconductor wafer surface and/or grow an oxide layer on the wafer surface by oxidation.

2. 发明申请

US20050056306A1 Apparatus and method for treating surfaces of semiconductor wafers using ozone 审中-公开
标题翻译：使用臭氧处理半导体晶片表面的设备和方法
公开(公告)号：US20050056306A1
公开(公告)日：2005-03-17
申请号：US10902643
申请日：2004-07-29
申请人： In Jeong , Yong Kim , Jungyup Kim
发明人： In Jeong , Yong Kim , Jungyup Kim
IPC分类号： B08B3/00 , B08B3/02 , B08B3/08 , B08B3/12 , B08B7/04 , H01L20060101 , H01L21/00 , H01L21/302 , H01L21/306 , H01L21/31 , H01L21/316 , H01L21/461 , H01L21/469
CPC分类号： H01L21/02046 , B08B3/02 , B08B3/08 , B08B2203/005 , H01L21/02238 , H01L21/31662 , H01L21/67051
摘要： An apparatus and method for treating surfaces of semiconductor wafers with a reactive gas, such as ozone, utilizes streams of gaseous material ejected from a gas nozzle structure to create depressions on or holes through a boundary layer of processing fluid formed on a semiconductor wafer surface to increase the amount of reactive gas that reaches the wafer surface through the boundary layer. The apparatus and method may be used to clean a semiconductor wafer surface and/or grow an oxide layer on the wafer surface by oxidation.
摘要翻译：用诸如臭氧的反应性气体处理半导体晶片的表面的设备和方法利用从气体喷嘴结构喷出的气态物流，以在半导体晶片表面上形成的处理流体的边界层上形成凹坑，增加通过边界层到达晶片表面的反应气体的量。该设备和方法可用于通过氧化来清洁半导体晶片表面和/或在晶片表面上生长氧化物层。

3. 发明申请

US20060264156A1 Apparatus and method for sequentially polishing and loading/unloading semiconductor wafers 失效
标题翻译：用于顺序研磨和加载/卸载半导体晶片的装置和方法
公开(公告)号：US20060264156A1
公开(公告)日：2006-11-23
申请号：US11494631
申请日：2006-07-28
申请人： In Jeong
发明人： In Jeong
IPC分类号： B24B51/00 , B24B7/30 , B24B29/00
CPC分类号： B24B37/345 , B24B37/013 , B24B41/005 , B24B41/061 , B24B49/02 , B24B53/017
摘要： A chemical mechanical polishing (CMP) apparatus and method for polishing semiconductor wafers utilizes multiple wafer carriers that are transferred to different positions about a polishing pad to polish at least one semiconductor wafer while another semiconductor wafer is being loaded onto or unloaded from one of the wafer carriers. The different positions include multiple polishing positions and one or more loading/unloading positions. In some embodiments, the CMP apparatus is configured such that a semiconductor wafer is polished at a loading/unloading position. The CMP apparatus may also be configured to continuously polish one or more semiconductor wafers while the wafer carriers are being transferred to different positions. Thus, the CMP apparatus can continuously process the semiconductor wafers without significant idle periods. Consequently, in these embodiments, the efficiency of the CMP apparatus is significantly increased. Furthermore, the wafer carriers of the CMP apparatus are preferably restricted to a small area to decrease the footprint of the apparatus.
摘要翻译：用于抛光半导体晶片的化学机械抛光（CMP）装置和方法利用多个晶片载体，其转移到抛光垫周围的不同位置以抛光至少一个半导体晶片，而另一个半导体晶片被加载到晶片之一或从其中的一个晶片承运人不同的位置包括多个抛光位置和一个或多个装载/卸载位置。在一些实施例中，CMP装置被配置为使得半导体晶片在装载/卸载位置被抛光。 CMP装置还可以被配置为在晶片载体被转移到不同位置的同时连续地抛光一个或多个半导体晶片。因此，CMP装置可以连续地处理半导体晶片而没有显着的空闲周期。因此，在这些实施例中，CMP装置的效率显着提高。此外，CMP装置的晶片载体优选地被限制在小的面积以减小装置的占地面积。

4. 发明申请

US20050034272A1 Hinge apparatus of drum for clothing dryer 审中-公开
标题翻译：滚筒用于衣物烘干机的铰链设备
公开(公告)号：US20050034272A1
公开(公告)日：2005-02-17
申请号：US10758038
申请日：2004-01-16
申请人： In Jeong , Dae Park , Young Park , Dong Lee , Kyung Hong , Si Jeon
发明人： In Jeong , Dae Park , Young Park , Dong Lee , Kyung Hong , Si Jeon
IPC分类号： D06F37/00 , D06F58/06 , E05D7/00
CPC分类号： D06F58/06 , D06F37/00 , Y10T16/524
摘要： A hinge apparatus of a drum for a clothing drier includes a front hinge portion formed between a front of a case and a front of a drum, for rotatably supporting the front of the drum; and a rear hinge portion installed between a rear of the case and a rear of the drum, and for supporting the rear of the drum so as to swing in vertical and horizontal directions, so that the drum can be smoothly rotated without being eccentric even in case that the center of rotation of the front of the drum is different from that of the rear of the drum, and also noise and vibration generated when the drum is rotated can be minimized.
摘要翻译：用于衣物干燥器的滚筒的铰链装置包括形成在壳体的前部和滚筒的前部之间的前铰链部分，用于可旋转地支撑滚筒的前部; 以及后铰链部分，安装在壳体的后部和滚筒的后部之间，并且用于支撑滚筒的后部以便在垂直和水平方向上摆动，使得滚筒能够平稳地旋转而不偏心，即使在鼓的前部的旋转中心与鼓的后部的旋转中心不同，并且还可以使滚筒旋转时产生的噪音和振动最小化。

5. 发明申请

US20080038992A1 Apparatus and method for sequentially polishing and loading/unloading semiconductor wafers 审中-公开
标题翻译：用于顺序研磨和加载/卸载半导体晶片的装置和方法
公开(公告)号：US20080038992A1
公开(公告)日：2008-02-14
申请号：US11713784
申请日：2007-03-05
申请人： In Jeong
发明人： In Jeong
IPC分类号： B24B51/00
CPC分类号： B24B37/345 , B24B37/013 , B24B41/005 , B24B41/061 , B24B49/02 , B24B53/017
摘要： A chemical mechanical polishing (CMP) apparatus and method for polishing semiconductor wafers utilizes multiple wafer carriers that are transferred to different positions about a polishing pad to polish at least one semiconductor wafer while another semiconductor wafer is being loaded onto or unloaded from one of the wafer carriers. The different positions include multiple polishing positions and one or more loading/unloading positions. In some embodiments, the CMP apparatus is configured such that a semiconductor wafer is polished at a loading/unloading position. The CMP apparatus may also be configured to continuously polish one or more semiconductor wafers while the wafer carriers are being transferred to different positions. Thus, the CMP apparatus can continuously process the semiconductor wafers without significant idle periods. Consequently, in these embodiments, the efficiency of the CMP apparatus is significantly increased. Furthermore, the wafer carriers of the CMP apparatus are preferably restricted to a small area to decrease the footprint of the apparatus.
摘要翻译：用于抛光半导体晶片的化学机械抛光（CMP）装置和方法利用多个晶片载体，其转移到抛光垫周围的不同位置以抛光至少一个半导体晶片，而另一个半导体晶片被加载到晶片之一或从其中的一个晶片承运人不同的位置包括多个抛光位置和一个或多个装载/卸载位置。在一些实施例中，CMP装置被配置为使得半导体晶片在装载/卸载位置被抛光。 CMP装置还可以被配置为在晶片载体被转移到不同位置的同时连续地抛光一个或多个半导体晶片。因此，CMP装置可以连续地处理半导体晶片而没有显着的空闲周期。因此，在这些实施例中，CMP装置的效率显着提高。此外，CMP装置的晶片载体优选地被限制在小的面积以减小装置的占地面积。

6. 发明申请

US20060105680A1 Apparatus and method for sequentially polishing and loading/unloading semiconductor wafers 失效
公开(公告)号：US20060105680A1
公开(公告)日：2006-05-18
申请号：US11313996
申请日：2005-12-22
申请人： In Jeong
发明人： In Jeong
IPC分类号： B24B51/00 , B24B29/00
CPC分类号： B24B37/345 , B24B37/013 , B24B41/005 , B24B41/061 , B24B49/02 , B24B53/017
摘要： A chemical mechanical polishing (CMP) apparatus and method for polishing semiconductor wafers utilizes multiple wafer carriers that are transferred to different positions about a polishing pad to polish at least one semiconductor wafer while another semiconductor wafer is being loaded onto or unloaded from one of the wafer carriers. The different positions include multiple polishing positions and one or more loading/unloading positions. In some embodiments, the CMP apparatus is configured such that a semiconductor wafer is polished at a loading/unloading position. The CMP apparatus may also be configured to continuously polish one or more semiconductor wafers while the wafer carriers are being transferred to different positions. Thus, the CMP apparatus can continuously process the semiconductor wafers without significant idle periods. Consequently, in these embodiments, the efficiency of the CMP apparatus is significantly increased. Furthermore, the wafer carriers of the CMP apparatus are preferably restricted to a small area to decrease the footprint of the apparatus.

7. 发明申请

US20060002142A1 Backlight unit 有权
标题翻译：背光单元
公开(公告)号：US20060002142A1
公开(公告)日：2006-01-05
申请号：US11117603
申请日：2005-04-29
申请人： In Jeong , Gi Kim
发明人： In Jeong , Gi Kim
IPC分类号： F21V7/04
CPC分类号： G02F1/133603 , F21V29/51 , F21V29/70 , F21Y2115/10 , F28D15/0275 , F28D15/04 , G02F2001/133628
摘要： A backlight unit is provided with LEDs having a cooling structure. The backlight includes a heat pipe, which is disposed below a PCB having the LEDs thereon, and a heat sink connected with the heat pipe. Heat generated from the LEDs conducts via the PCB and the heat pipe and is then radiated by the heat sink. The cooling performance of the backlight unit is thus enhanced and the temperature increase in the light emission region is thus suppressed, so that thermal reliability of the LEDs is enhanced and light efficiency is increased to increase the brightness and to decrease the power consumption.
摘要翻译：背光单元设置有具有冷却结构的LED。该背光源包括设置在其上具有LED的PCB下方的热管和与该热管连接的散热器。从LED产生的热量通过PCB和热管进行传导，然后被散热器辐射。因此，背光单元的冷却性能得到提高，并且因此抑制了发光区域的温度升高，从而提高了LED的热可靠性，并且增加了光效率以增加亮度并降低功耗。

8. 发明申请

US20070045829A1 Backside ground type flip chip semiconductor package 审中-公开
标题翻译：背面接地型倒装芯片半导体封装
公开(公告)号：US20070045829A1
公开(公告)日：2007-03-01
申请号：US11510649
申请日：2006-08-28
申请人： In Jeong , Nam Kim
发明人： In Jeong , Nam Kim
IPC分类号： H01L23/34
CPC分类号： H01L23/3121 , H01L23/3677 , H01L23/482 , H01L23/49805 , H01L23/49816 , H01L23/552 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/16 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/451 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/16152 , H01L2924/19105 , H01L2924/30107 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2924/00015 , H01L2224/05599
摘要： In a flip chip semiconductor package, a substrate is provided. At least one chip is flip-bonded onto the substrate to electrically connect to a circuit pattern-printed on the substrate. A molded part is formed on the substrate so as to expose a backside ground of the chip. Also, a conductive metal layer is extended along an outer surface of the molded part to electrically connect to the backside ground. According to the invention, heat generated from the chip is released through the backside ground to improve heat releasing properties. Furthermore, the electrical ground is formed without creating a parasitic component to enhance electrical properties.
摘要翻译：在倒装芯片半导体封装中，提供了衬底。至少一个芯片被翻转接合到基板上以电连接到印刷在基板上的电路图案。在基板上形成模制部件，以露出芯片的背面。此外，导电金属层沿着模制部件的外表面延伸以电连接到背面接地。根据本发明，从芯片产生的热量通过背面地面释放以改善放热性能。此外，形成电接地而不产生寄生成分以增强电性能。

9. 发明申请

US20060099807A1 Methods for fabricating one or more metal damascene structures in a semiconductor wafer 失效
标题翻译：在半导体晶片中制造一个或多个金属镶嵌结构的方法
公开(公告)号：US20060099807A1
公开(公告)日：2006-05-11
申请号：US11270270
申请日：2005-11-08
申请人： In Jeong
发明人： In Jeong
IPC分类号： H01L21/44
CPC分类号： H01L21/7684 , H01L21/31053 , H01L21/32115 , H01L21/3212 , H01L21/32125
摘要： Methods for fabricating one or more metal (e.g., copper) damascene structures in a semiconductor wafer use at least three polishing steps to reduce erosion topography in the resulting metal damascene structures and/or increase throughput. The polishing steps may be performed at four polishing units of a polishing apparatus, which may include one or more pivotable load/unload cups to transfer the semiconductor wafer between some of the polishing units.
摘要翻译：在半导体晶片中制造一个或多个金属（例如铜）镶嵌结构的方法使用至少三个抛光步骤以减少所得金属镶嵌结构中的侵蚀形貌和/或增加生产量。抛光步骤可以在抛光装置的四个抛光单元处执行，抛光装置可以包括一个或多个可枢转的装载/卸载杯，以在一些抛光单元之间传送半导体晶片。

10. 发明申请

US20060002115A1 External electrode fluorescent lamp and manufacturing method thereof 失效
标题翻译：外部电极荧光灯及其制造方法
公开(公告)号：US20060002115A1
公开(公告)日：2006-01-05
申请号：US11158008
申请日：2005-06-22
申请人： In Jeong
发明人： In Jeong
IPC分类号： F21K2/00
CPC分类号： H01J65/046 , G02F1/133604 , H01J61/30
摘要： An external electrode fluorescent lamp includes an external electrode having an increased surface area. The external electrode fluorescent lamp includes a lamp tube, the lamp tube including a “W”-like shaped end portion, and a double-tube external electrode formed on an outer surface of the “W”-like shaped end portion, the double-tube external electrode including a first electrode on a concave outer surface of the “W”-like shaped end portion, and a second electrode formed on a non-concave outer surface of the “W”-like shaped end portion. Alternatively, the external electrode fluorescent lamp includes a lamp tube, the lamp tube having two end portions and an intermediate portion between the end portions and a diameter of the end portions being larger than a diameter of the intermediate portion, and external electrodes respectively formed on an outer surface of the end portions of the lamp tube.
摘要翻译：外部电极荧光灯包括具有增加的表面积的外部电极。外部电极荧光灯包括灯管，灯管包括“W”形端部，以及形成在“W”形端部的外表面上的双管外电极，管状外部电极，其包括在“W”形端部的凹形外表面上的第一电极，以及形成在“W”形端部的非凹面外表面上的第二电极。或者，外部电极荧光灯包括灯管，灯管具有两个端部，端部之间的中间部分和端部的直径大于中间部分的直径，外部电极分别形成在灯管的端部的外表面。

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