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41. 发明授权

US5719730A Low fringe-field and narrow write-track magneto-resistive (MR) magnetic read-write head 失效
标题翻译：低边缘场和窄写磁阻（MR）磁读写头
公开(公告)号：US5719730A
公开(公告)日：1998-02-17
申请号：US682476
申请日：1996-07-17
申请人： Jei-Wei Chang , Kochan Ju , Yimin Guo , Xizeng Shi , Arthur Hungshin Tao
发明人： Jei-Wei Chang , Kochan Ju , Yimin Guo , Xizeng Shi , Arthur Hungshin Tao
IPC分类号： G11B5/012 , G11B5/187 , G11B5/265 , G11B5/31 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1871 , G11B5/2651 , G11B5/3103 , G11B5/3116 , G11B5/3967 , G11B2005/3996 , G11B5/012
摘要： A low fringe-field and narrow write-track magnetic read-write head. The low fringe-field and narrow write-track magnetic read-write head includes a first pole layer formed adjoining an insulator layer over a substrate. The first pole layer has a first air bearing surface which has a first edge adjoining and parallel with a first surface of the insulator layer. The low fringe-field and narrow write-track magnetic read-write head also includes a second pole layer separated from the first pole layer by the insulator layer. The second pole layer has a width no greater than about 20 microns and a width no greater than about 100 percent of the width of the first pole layer where the width of the second pole layer is contained within the width of the first pole layer. The second pole layer also has a second air bearing surface coplanar with the first air bearing surface. The second air bearing surface has a second edge adjoining and parallel with a second surface of the insulator layer parallel and opposite from the first surface of the insulator layer. Finally, there is removed at least one portion of at least one of: (1) the second air bearing surface including at least one outer portion of the second edge; and (2) the first air bearing surface including at least one portion of the first edge most closely adjoining but not opposite the second edge.
摘要翻译：低边缘场和窄写磁道磁读写头。低条纹场和窄写磁道磁读写头包括邻近衬底上的绝缘体层形成的第一极层。第一极层具有第一空气轴承表面，其具有与绝缘体层的第一表面相邻并平行的第一边缘。低条纹场和窄写磁道磁读写头还包括通过绝缘体层与第一极层分离的第二极层。第二极层的宽度不大于约20微米，宽度不大于第一极层的宽度的第一极层的宽度的大约百分之百，其中第二极层的宽度包含在第一极层的宽度内。第二极层还具有与第一空气轴承表面共面的第二空气轴承表面。第二空气轴承表面具有与绝缘体层的与绝缘体层的第一表面平行且相对的绝缘体层的第二表面相邻并平行的第二边缘。最后，移除至少一部分至少一个：（1）第二空气支承表面包括第二边缘的至少一个外部部分; 和（2）所述第一空气轴承表面包括所述第一边缘的至少一部分最接近但不相对于所述第二边缘。

42. 发明授权

US07007372B1 Method for making high speed, high areal density inductive write structure 失效
标题翻译：制造高速，高密度感应写入结构的方法
公开(公告)号：US07007372B1
公开(公告)日：2006-03-07
申请号：US10656311
申请日：2003-09-05
申请人： Yingjian Chen , Hua-Ching Tong , Lei Wang , Xizeng Shi
发明人： Yingjian Chen , Hua-Ching Tong , Lei Wang , Xizeng Shi
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3146 , G11B5/3109 , G11B5/3113 , G11B5/3116 , G11B5/313 , G11B5/3153 , G11B5/3967 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49048 , Y10T29/49052 , Y10T29/49071 , Y10T29/49073
摘要： An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high Bsat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high Bsat material (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.
摘要翻译：公开了用于磁数据记录系统的感应写入元件。写元件通过改善通过元件的磁通量提供增加的数据速率和数据密度能力。写元件包括由第一和第二磁极构成的磁轭。第一极包括由高磁矩（高B sat sat）材料构成的基座，其优选为具有CoZrCr层压层的FeRhN纳米晶体膜。第二极包括一高层高层材料的薄层（也优选具有CoZrCr叠层的FeRhN纳米晶膜），其余部分由能够电镀的磁性材料构成，例如Ni -Fe合金。导电线圈通过第一和第二极之间的磁轭，当电流流过线圈时，引起磁轭中的磁通量。轭中的磁通在写入间隙产生边缘场，由此可以将信号传递到通过的磁介质上。

43. 发明授权

US06713801B1 &agr;-tantalum lead for use with magnetic tunneling junctions 失效
标题翻译：用于磁性隧道结的α-钽铅
公开(公告)号：US06713801B1
公开(公告)日：2004-03-30
申请号：US10192430
申请日：2002-07-09
申请人： Kyusik Sin , Hugh C. Hiner , Xizeng Shi
发明人： Kyusik Sin , Hugh C. Hiner , Xizeng Shi
IPC分类号： H01L2976
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , H01F10/3254 , H01F41/302 , H01L27/222
摘要： A method and system for providing a tunneling junction is disclosed. The method and system includes providing a free layer, a pinned layer, and a barrier between the free layer and the pinned layer. The free layer and the pinned layer are ferromagnetic. The barrier layer is an insulator. The magnetic tunneling junction is coupled to an &agr;-Ta lead.
摘要翻译：公开了一种用于提供隧道结的方法和系统。该方法和系统包括在自由层和被钉扎层之间提供自由层，钉扎层和阻挡层。自由层和钉扎层是铁磁性的。阻挡层是绝缘体。磁性隧道结与α-Ta引线耦合。

44. 发明授权

US06687178B1 Temperature dependent write current source for magnetic tunnel junction MRAM 有权
标题翻译：磁性隧道结MRAM的温度依赖写入电流源
公开(公告)号：US06687178B1
公开(公告)日：2004-02-03
申请号：US10017925
申请日：2001-12-07
申请人： Qiuqun Qi , Xizeng Shi
发明人： Qiuqun Qi , Xizeng Shi
IPC分类号： G11C704
CPC分类号： G11C7/04 , G11C11/16
摘要： An MRAM storage device includes temperature dependent current sources that adjust their outputs as temperature varies. Temperature dependent current sources include one or more diodes connected to a transistor. As temperature varies so does the voltage drop across the diodes. In addition, the MRAM data storage device includes at least one digit line, at least one bit line, and at least one MRAM cell disposed proximate to a junction of a digit line and a bit line. Each end of each digit line is connected to temperature dependent current sources and current sinks. One end of each bit line is connected to a temperature dependent current source while the other end of each bit line is connected to a current sink. Two logic signals R and D are used to activate a write operation and determine the direction of the write current in the digit line.
摘要翻译： MRAM存储设备包括随温度变化调节其输出的温度相关电流源。与温度相关的电流源包括连接到晶体管的一个或多个二极管。随着温度的变化，二极管上的电压降也是如此。此外，MRAM数据存储装置包括至少一个数字线，至少一个位线，以及靠近数字线和位线的结点设置的至少一个MRAM单元。每个数字线的每一端连接到与温度相关的电流源和电流吸收器。每个位线的一端连接到与温度相关的电流源，而每个位线的另一端连接到电流吸收器。两个逻辑信号R和D用于激活写入操作并确定数字线中写入电流的方向。

45. 发明授权

US07977111B2 Devices using addressable magnetic tunnel junction array to detect magnetic particles 有权
标题翻译：使用可寻址磁隧道结阵列检测磁性颗粒的装置
公开(公告)号：US07977111B2
公开(公告)日：2011-07-12
申请号：US12009366
申请日：2008-01-18
申请人： Xizeng Shi , Pokang Wang , Hsu Kai Yang
发明人： Xizeng Shi , Pokang Wang , Hsu Kai Yang
IPC分类号： G01N25/18
CPC分类号： G01R33/098 , G01R33/1269 , Y10S436/806
摘要： A magnetic sensor for identifying small superparamagnetic particles bonded to a substrate contains a regular orthogonal array of MTJ cells formed beneath that substrate. A magnetic field imposed on the particle, perpendicular to the substrate, induces a magnetic field that has a component within the MTJ cells that is along the plane of the MTJ free layer. If that free layer has a low switching threshold, the induced field of the particle will create resistance changes in a group of MTJ cells that lie beneath it. These resistance changes will be distributed in a characteristic formation or signature that will indicate the presence of the particle. If the particle's field is insufficient to produce the free layer switching, then a biasing field can be added in the direction of the hard axis and the combination of this field and the induced field allows the presence of the particle to be determined.
摘要翻译：用于识别结合到衬底的小超顺磁性颗粒的磁传感器包含在该衬底下面形成的MTJ电池的规则正交阵列。垂直于衬底施加在颗粒上的磁场诱导磁场，该磁场在MTJ单元内具有沿着MTJ自由层的平面的分量。如果自由层具有低切换阈值，则颗粒的感应场将在其下面的一组MTJ细胞中产生电阻变化。这些电阻变化将分布在表征粒子存在的特征形成或特征中。如果粒子的场不足以产生自由层切换，则可以在硬轴的方向上添加偏置场，并且该场与感应场的组合允许确定粒子的存在。

46. 发明申请

US20050007696A1 Write head having a recessed, magnetic adjunct pole formed atop a main pole, and method of making the same 有权
公开(公告)号：US20050007696A1
公开(公告)日：2005-01-13
申请号：US10903977
申请日：2004-07-29
申请人： Yingjian Chen , Xiaozhong Dang , Francis Liu , Kroum Stoev , Hai Jiang , Yugang Wang , Xizeng Shi
发明人： Yingjian Chen , Xiaozhong Dang , Francis Liu , Kroum Stoev , Hai Jiang , Yugang Wang , Xizeng Shi
IPC分类号： G11B5/127 , G11B5/31 , G11B5/147
CPC分类号： G11B5/1278 , G11B5/3109 , Y10T29/49034 , Y10T29/49044
摘要： A read/write head and method of making the same are used in a data storage system, such as a disk drive, for perpendicular magnetic recording of data. The head employs a two-layer pole design with a main pole made of sputtered high moment magnetic material, and an adjunct pole made of electroplated soft magnetic film. The main pole is used to write data onto the medium, and is formed over the write coil. The adjunct pole is substantially recessed from the air bearing surface and is formed over the main pole. The present head design significantly enhances the magnetic write field, and substantially reduces side-writing that result in accidental erasure of data in adjacent tracks on the magnetic recording medium.

47. 发明授权

US06791793B1 Perpendicular recording write head having a recessed magnetic adjunct pole and method of making the same 有权
标题翻译：具有嵌入式磁辅助极的垂直记录写头及其制造方法
公开(公告)号：US06791793B1
公开(公告)日：2004-09-14
申请号：US09952989
申请日：2001-09-14
申请人： Yingjian Chen , Xiaozhong Dang , Francis H. Liu , Kroum Stoev , Hai Jiang , Yugang Wang , Xizeng Shi
发明人： Yingjian Chen , Xiaozhong Dang , Francis H. Liu , Kroum Stoev , Hai Jiang , Yugang Wang , Xizeng Shi
IPC分类号： G11B5147
CPC分类号： G11B5/1278 , G11B5/3109 , Y10T29/49034 , Y10T29/49044
摘要： A read/write head and method of making the same, are used in a data storage system, such as a disk drive, for perpendicular magnetic recording of data. The head employs a two-layer pole design with a main pole made of sputtered high moment magnetic material, and an adjunct pole made of electroplated soft magnetic film. The adjunct pole is substantially recessed from the air bearing surface. The present head design significantly enhances the magnetic write field, and substantially reduces side-writing that result in accidental erasure of data in adjacent tracks on the magnetic recording medium.
摘要翻译：读/写头及其制造方法用于数据存储系统，例如磁盘驱动器，用于数据的垂直磁记录。头部采用双层极设计，其主极由溅射高磁矩材料制成，电极由电镀软磁膜制成。附加杆基本上从空气轴承表面凹入。本头设计显着增强了磁写入场，并且基本上减少了导致磁记录介质上的相邻轨道中的数据的意外擦除的侧写。

48. 发明授权

US06744608B1 Method and system for making TMR junctions 有权
标题翻译：制造TMR结的方法和系统
公开(公告)号：US06744608B1
公开(公告)日：2004-06-01
申请号：US10146517
申请日：2002-05-14
申请人： Kyusik Sin , Kristian M. Bjelland , Benjamin Chen , Hugh C. Hiner , Xizeng Shi
发明人： Kyusik Sin , Kristian M. Bjelland , Benjamin Chen , Hugh C. Hiner , Xizeng Shi
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B5/3909 , G11B2005/3996
摘要： A method and system for providing a tunneling magnetoresistive sensor is disclosed. The method and system include providing a pinned layer, a free layer and an insulating layer between the pinned and free layers. The pinned and free layers are ferromagnetic. The method and system also include providing a hard mask layer to be used in defining the sensor at the top of the tunneling magnetoresistive sensor. The method and system also include using the hard mask layer to define the tunneling magnetoresistive sensor. Thus, the pinned layer, the free layer and the insulating layer are capable of having a minimum dimension of less than 0.2 &mgr;m.
摘要翻译：公开了一种用于提供隧道磁阻传感器的方法和系统。该方法和系统包括在钉扎层和自由层之间提供钉扎层，自由层和绝缘层。固定和自由层是铁磁性的。该方法和系统还包括提供用于在隧道磁阻传感器的顶部限定传感器的硬掩模层。该方法和系统还包括使用硬掩模层来定义隧道磁阻传感器。因此，被钉扎层，自由层和绝缘层能够具有小于0.2μm的最小尺寸。

49. 发明授权

US06697294B1 Designs of reference cells for magnetic tunnel junction (MTJ) MRAM 有权
标题翻译：磁隧道结（MTJ）MRAM参考电池设计
公开(公告)号：US06697294B1
公开(公告)日：2004-02-24
申请号：US10055118
申请日：2002-01-22
申请人： Qiuqun Qi , Xizeng Shi , Matthew R. Gibbons
发明人： Qiuqun Qi , Xizeng Shi , Matthew R. Gibbons
IPC分类号： G11C702
CPC分类号： G11C11/16
摘要： A reference cell circuit for a magnetic tunnel junction MRAM includes two magnetic tunnel junctions where one is always set to a low resistance state and the other is always set to a high resistance state. The two magnetic tunnel junctions are connected between two segments of a bit line. The reference cell also includes a digit line that crosses both of the bit line segments.
摘要翻译：用于磁隧道结MRAM的参考单元电路包括两个磁隧道结，其中一个总是设置为低电阻状态，另一个总是设置为高电阻状态。两个磁隧道结连接在位线的两段之间。参考单元还包括穿过两个位线段的数字线。

50. 发明授权

US06618223B1 High speed, high areal density inductive writer 失效
标题翻译：高速，高密度感应写入器
公开(公告)号：US06618223B1
公开(公告)日：2003-09-09
申请号：US09617791
申请日：2000-07-18
申请人： Yingjian Chen , Hua-Ching Tong , Lei Wang , Xizeng Shi
发明人： Yingjian Chen , Hua-Ching Tong , Lei Wang , Xizeng Shi
IPC分类号： G11B5147
CPC分类号： G11B5/3146 , G11B5/3109 , G11B5/3113 , G11B5/3116 , G11B5/313 , G11B5/3153 , G11B5/3967 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49048 , Y10T29/49052 , Y10T29/49071 , Y10T29/49073
摘要： An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high Bsat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high Bsat material (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.
摘要翻译：公开了用于磁数据记录系统的感应写入元件。写元件通过改善通过元件的磁通量提供增加的数据速率和数据密度能力。写元件包括由第一和第二磁极构成的磁轭。第一极包括由高磁矩（高Bsat）材料构成的基座，其优选为具有CoZrCr层压层的FeRhN纳米晶体膜。第二极包括具有高Bsat材料的薄内层（还优选具有CoZrCr层压层的FeRhN纳米晶膜），其余部分由能够电镀的磁性材料如Ni-Fe合金构成。导电线圈通过第一和第二极之间的磁轭，当电流流过线圈时，引起磁轭中的磁通量。轭中的磁通在写入间隙产生边缘场，由此可以将信号传递到通过的磁介质上。

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