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    • 42. 发明授权
    • MEMS switch and communication device using the same
    • MEMS开关和通讯装置使用相同
    • US08847087B2
    • 2014-09-30
    • US13262666
    • 2010-08-26
    • Yasuyuki NaitoXavier RottenbergJan BienstmanHendrikus A. C. Tilmans
    • Yasuyuki NaitoXavier RottenbergJan BienstmanHendrikus A. C. Tilmans
    • H01H1/50H01H59/00
    • H01H59/0009H01H2059/0072
    • A MEMS switch is provided wherein contact force sufficient to make a contact having low contact resistance is maintained after contact-formation to maintain low contact resistance at the signal transmission contact in “on” state. Provided is a MEMS switch 100 including a first electrode 101, a second electrode 104 opposed to and separated from the first electrode, a third and a fourth electrodes 1021 and 1022, wherein electrical contact is made between the electrodes 101 and 104 by electrostatic force generated between the electrode 101 and the electrodes 1021, 1022, and a bump which can form the contact between the electrode 101 and the electrode 1021 and/or 1022 is provided on the electrode 101, and a gap is formed between the electrode 101 and the electrode 1021 and/or 1022 when the electrical contact is made, and control signals are input to the electrodes 1021 and 1022 independently.
    • 提供一种MEMS开关,其中在接触形成之后保持足以使接触电阻低的接触力保持在“接通”状态下的信号传输接触处的低接触电阻。 提供了一种MEMS开关100,其包括第一电极101,与第一电极相对并分离的第二电极104,第三和第四电极1021和1022,其中通过产生静电力在电极101和104之间形成电接触 在电极101和电极1021,1022之间,并且在电极101上设置可形成电极101与电极1021和/或1022之间的接触的突起,并且在电极101和电极之间形成间隙 1021和/或1022,并且控制信号被独立地输入到电极1021和1022。
    • 43. 发明申请
    • MEMS SWITCH AND COMMUNICATION DEVICE USING THE SAME
    • 使用相同的MEMS开关和通信装置
    • US20120055769A1
    • 2012-03-08
    • US13265970
    • 2010-08-26
    • Yasuyuki NaitoJan BienstmanXavier RottenbergHendrikus A.C. Tilmans
    • Yasuyuki NaitoJan BienstmanXavier RottenbergHendrikus A.C. Tilmans
    • H01H59/00
    • H01H59/0009H01G5/16H01G5/18H01H2059/0072
    • A MEMS switch is provided, wherein contact force sufficient to make a contact having low contact resistance is maintained after contact-formation to maintain low contact resistance at the contact where the signal is transmitted in “on” state. Provided is a MEMS switch 100 including a first electrode 101, a second electrode 104 opposed to and separated from the first electrode, a third and a fourth electrodes 1021 and 1022, wherein electrical contact is made between the electrode 101 and the electrode 104 by electrostatic force generated between the electrode 101 and the electrodes 1021, 1022, and a bump which can form the contact between the electrode 101 and the electrode 1021 and/or 1022 is provided on the electrode 101, and a gap is formed between the electrode 101 and the electrode 1021 and/or 1022 when the electrical contact is made between the electrodes 101 and 104.
    • 提供了一种MEMS开关,其中接触形成后保持足以使接触电阻低的接触力,以保持信号在“接通”状态下的接触处的低接触电阻。 提供了一种MEMS开关100,其包括第一电极101,与第一电极相对并分离的第二电极104,第三和第四电极1021和1022,其中通过静电在电极101和电极104之间进行电接触 电极101和电极1021,102之间产生的力和可形成电极101和电极1021和/或1022之间的接触的凸块设置在电极101上,并且在电极101和 当在电极101和104之间形成电接触时,电极1021和/或1022。
    • 44. 发明授权
    • Microelectromechanical element and electromechanical switch using the same
    • 微机电元件和机电开关使用相同
    • US08093968B2
    • 2012-01-10
    • US11814187
    • 2006-10-11
    • Yasuyuki Naito
    • Yasuyuki Naito
    • H01H51/22
    • H01H1/0036B81B3/0005B81B2201/018
    • A microelectromechanical element of a hydrophobic surface structure with a long life and high reliability and an electromechanical switch using the microelectromechanical element are provided. The surface of an electrode has a composite surface structure of a first area made of a first material forming the electrode and a second area made of a second material at least having hydrophobicity. The surface structure is the composite surface structure of the electrode material and a monolayer, whereby physical compression of the monolayer is avoided. A structure wherein the monolayer is not formed on the propagation path of a radio frequency signal is adopted, so that an increase in an insertion loss and electric field damage are avoided.
    • 提供了具有长寿命和高可靠性的疏水性表面结构的微电子机械元件和使用微机电元件的机电开关。 电极的表面具有由形成电极的第一材料制成的第一区域和至少具有疏水性的第二材料制成的第二区域的复合表面结构。 表面结构是电极材料和单层的复合表面结构,从而避免了单层的物理压缩。 采用其中在射频信号的传播路径上未形成单层的结构,从而避免了插入损耗和电场损伤的增加。
    • 45. 发明申请
    • SAMPLING MIXER, FILTER DEVICE, AND RADIO DEVICE
    • 采样混合器,过滤器和无线电设备
    • US20110221507A1
    • 2011-09-15
    • US13115398
    • 2011-05-25
    • Yoshifumi HosokawaNoriaki SaitoKatsuaki AbeKentaro MiyanoYasuyuki Naito
    • Yoshifumi HosokawaNoriaki SaitoKatsuaki AbeKentaro MiyanoYasuyuki Naito
    • G06G7/12
    • H03D7/125H03H15/00
    • A sampling mixer includes TAs (transconductance amplifiers), an in-phase mixer section connected to the TA and the TA, an opposite-phase mixer section connected in parallel with the in-phase mixer section, and a signal generator for generating a control signal for the in-phase mixer section and the opposite-phase mixer section respectively. The IIR filter using signals that underwent a current conversion by using the different transconductances is constructed, so that the filter characteristic can be designed by a weighting of the transconductance in addition to a capacitance ratio. As a result, the wide-band filter characteristic and the band-pass filter characteristic can be obtained, and deterioration of the receiving sensitivity can be suppressed by designing the filter characteristic suitable for the radio communication system.
    • 采样混频器包括TA(跨导放大器),连接到TA和TA的同相混频器部分,与同相混频器部分并联连接的反相混频器部分和用于产生控制信号的信号发生器 分别用于同相混合器部分和反相混合器部分。 构成使用通过使用不同的跨导进行电流转换的信号的IIR滤波器,从而除了电容比之外,可以通过加权跨导来设计滤波器特性。 结果,可以获得宽带滤波器特性和带通滤波器特性,并且可以通过设计适合于无线电通信系统的滤波特性来抑制接收灵敏度的劣化。
    • 47. 发明授权
    • Electromechanical memory, electric circuit using the same, and method of driving electromechanical memory
    • 机电存储器,使用其的电路以及驱动机电存储器的方法
    • US07710768B2
    • 2010-05-04
    • US11813568
    • 2006-06-21
    • Yasuyuki Naito
    • Yasuyuki Naito
    • G11C11/50
    • H01L27/10G11C23/00
    • A memory element which has high affinity with a conventional semiconductor process, which has a switching function of completely interrupting electric conduction paths by in a mechanical manner, and in which nonvolatile information recording is enabled is realized. An electromechanical memory which is formed on a substrate, which is formed by interposing a memory cell by electrodes, and which has a movable electrode that is a beam stretched in the air via a post portion is realized. According to the configuration, a nonvolatile memory can be realized by a simple structure, and it is possible to realize a high-performance electromechanical memory which is conventionally difficult to be realized, and in which the power consumption is low and the cost is low, and an electric apparatus using it.
    • 具有与传统的半导体工艺具有高亲和性的存储元件,其具有通过机械方式完全中断导电路径的切换功能,并且其中实现了非易失性信息记录。 实现了在基板上形成的机电存储器,其通过电极插入存储单元而形成,并且具有通过柱部分在空中延伸的光束的可动电极。 根据该结构,能够通过简单的结构实现非易失性存储器,可以实现以往难以实现的高性能机电存储器,并且功耗低,成本低, 和使用它的电气设备。
    • 49. 发明申请
    • MICROELECTROMECHANICAL ELEMENT AND ELECTROMECHANICAL SWITCH USING THE SAME
    • 微电子元件和使用它的电动开关
    • US20090200144A1
    • 2009-08-13
    • US11814187
    • 2006-10-11
    • Yasuyuki Naito
    • Yasuyuki Naito
    • H01H57/00
    • H01H1/0036B81B3/0005B81B2201/018
    • A microelectromechanical element of a hydrophobic surface structure with a long life and high reliability and an electromechanical switch using the microelectromechanical element are provided. The surface of an electrode has a composite surface structure of a first area made of a first material forming the electrode and a second area made of a second material at least having hydrophobicity. The surface structure is the composite surface structure of the electrode material and a monolayer, whereby physical compression of the monolayer is avoided. A structure wherein the monolayer is not formed on the propagation path of a radio frequency signal is adopted, so that an increase in an insertion loss and electric field damage are avoided.
    • 提供了具有长寿命和高可靠性的疏水性表面结构的微电子机械元件和使用微机电元件的机电开关。 电极的表面具有由形成电极的第一材料制成的第一区域和至少具有疏水性的第二材料制成的第二区域的复合表面结构。 表面结构是电极材料和单层的复合表面结构,从而避免了单层的物理压缩。 采用其中在射频信号的传播路径上未形成单层的结构,从而避免了插入损耗和电场损伤的增加。