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1. 发明授权

US08723061B2 MEMS switch and communication device using the same 有权
标题翻译： MEMS开关和通讯装置使用相同
公开(公告)号：US08723061B2
公开(公告)日：2014-05-13
申请号：US13265970
申请日：2010-08-26
申请人： Yasuyuki Naito , Jan Bienstman , Xavier Rottenberg , Hendrikus A. C. Tilmans
发明人： Yasuyuki Naito , Jan Bienstman , Xavier Rottenberg , Hendrikus A. C. Tilmans
IPC分类号： H01H57/00
CPC分类号： H01H59/0009 , H01G5/16 , H01G5/18 , H01H2059/0072
摘要： A MEMS switch in which contact force sufficient to make a contact having low contact resistance is maintained after contact-formation to maintain low contact resistance at the contact where the signal is transmitted in an “on” state. The MEMS switch includes a first electrode, a second electrode opposed to and separated from the first electrode, a third and a fourth electrodes, wherein electrical contact is made between the electrodes by electrostatic force generated between the electrodes, and a bump which can form the contact between the electrodes is provided on an electrode, and a gap is formed between the electrodes when the electrical contact is made between the electrodes.
摘要翻译：在接触形成之后，保持接触力足以形成具有低接触电阻的接触力的MEMS开关，以保持信号在“接通”状态下的接触处的低接触电阻。 MEMS开关包括第一电极，与第一电极相对并分离的第二电极，第三和第四电极，其中通过在电极之间产生的静电力在电极之间形成电接触，以及可形成电极之间的接触设置在电极上，并且当在电极之间形成电接触时，在电极之间形成间隙。

2. 发明授权

US08847087B2 MEMS switch and communication device using the same 有权
标题翻译： MEMS开关和通讯装置使用相同
公开(公告)号：US08847087B2
公开(公告)日：2014-09-30
申请号：US13262666
申请日：2010-08-26
申请人： Yasuyuki Naito , Xavier Rottenberg , Jan Bienstman , Hendrikus A. C. Tilmans
发明人： Yasuyuki Naito , Xavier Rottenberg , Jan Bienstman , Hendrikus A. C. Tilmans
IPC分类号： H01H1/50 , H01H59/00
CPC分类号： H01H59/0009 , H01H2059/0072
摘要： A MEMS switch is provided wherein contact force sufficient to make a contact having low contact resistance is maintained after contact-formation to maintain low contact resistance at the signal transmission contact in “on” state. Provided is a MEMS switch 100 including a first electrode 101, a second electrode 104 opposed to and separated from the first electrode, a third and a fourth electrodes 1021 and 1022, wherein electrical contact is made between the electrodes 101 and 104 by electrostatic force generated between the electrode 101 and the electrodes 1021, 1022, and a bump which can form the contact between the electrode 101 and the electrode 1021 and/or 1022 is provided on the electrode 101, and a gap is formed between the electrode 101 and the electrode 1021 and/or 1022 when the electrical contact is made, and control signals are input to the electrodes 1021 and 1022 independently.
摘要翻译：提供一种MEMS开关，其中在接触形成之后保持足以使接触电阻低的接触力保持在“接通”状态下的信号传输接触处的低接触电阻。提供了一种MEMS开关100，其包括第一电极101，与第一电极相对并分离的第二电极104，第三和第四电极1021和1022，其中通过产生静电力在电极101和104之间形成电接触在电极101和电极1021,1022之间，并且在电极101上设置可形成电极101与电极1021和/或1022之间的接触的突起，并且在电极101和电极之间形成间隙 1021和/或1022，并且控制信号被独立地输入到电极1021和1022。

3. 发明授权

US07372346B2 Acoustic resonator 有权
标题翻译：声谐振器
公开(公告)号：US07372346B2
公开(公告)日：2008-05-13
申请号：US11024165
申请日：2004-12-27
申请人： Hendrikus A. C. Tilmans , Wanling Pan
发明人： Hendrikus A. C. Tilmans , Wanling Pan
IPC分类号： H03H9/54 , H03H9/15
CPC分类号： H03H9/172 , H03H9/02102 , H03H2009/02196
摘要： A tuneable film bulk acoustic resonator (FBAR) device. The FBAR device includes a bottom electrode, a top electrode and a piezoelectric layer in between the bottom electrode and the top electrode. The piezoelectric layer has a first overlap with the bottom electrode, where the first overlap is defined by a projection of the piezoelectric layer onto the bottom electrode in a direction substantially perpendicular to a plane of the bottom electrode. The FBAR device also includes a first dielectric layer in between the piezoelectric layer and the bottom electrode and a mechanism for reversibly varying an internal impedance of the device, so as to tune a resonant frequency of the FBAR device.
摘要翻译：可调薄膜体声共振器（FBAR）装置。 FBAR器件包括在底部电极和顶部电极之间的底部电极，顶部电极和压电层。压电层具有与底部电极的第一重叠，其中第一重叠由基本上垂直于底部电极的平面的方向将压电层投影到底部电极上限定。 FBAR器件还包括在压电层和底部电极之间的第一介电层和用于可逆地改变器件的内部阻抗的机构，以调谐FBAR器件的谐振频率。

4. 发明授权

US5165289A Resonant mechanical sensor 失效
标题翻译：共振机械传感器
公开(公告)号：US5165289A
公开(公告)日：1992-11-24
申请号：US551523
申请日：1990-07-10
申请人： Hendrikus A. C. Tilmans
发明人： Hendrikus A. C. Tilmans
IPC分类号： G01L1/18 , G01L9/00 , G01P15/097 , G01P15/10
CPC分类号： G01P15/097 , G01L1/183 , G01L9/0042 , G01L9/008
摘要： The sensor according to the present invention provides a device for measuring the magnitude of an applied load as a shift in resonant frequency of a mechanical resonator caused by load-induced strains on the resonator. The sensor includes a substrate, generally constructed of a semiconductor material, e.g. silicon, a diaphragm substantially supported along its outer periphery by the substrate, a boss abutting a region of the diaphragm remote from the outer periphery of the diaphragm, at least one resonator in the form of a beam having one end integral to the diaphragm proximate the region of the boss and the other end integral to the diaphragm remote from the boss, a hermetic seal for enclosing the resonator, and an exciter/detector for measuring changes in the natural frequency of the resonator due to an applied load. Preferably, the sensor includes a differential resonator configuration in which the resonators are positioned rectilinearly with respect to each other and are covered by the same hermetic seal.
摘要翻译：根据本发明的传感器提供了一种用于测量施加的负载的大小作为由谐振器上的负载引起的应变引起的机械谐振器的谐振频率的偏移的装置。传感器包括通常由半导体材料构成的衬底，例如硅，其基板沿着其外周基本上被支撑的隔膜;凸起邻接所述隔膜的远离所述隔膜的外周的区域;至少一个波形形式的谐振器，其一端与所述隔膜接近的一端凸台的一部分和与凸台相隔离的隔膜的另一端，用于封闭谐振器的气密密封件，以及用于测量由施加的负载引起的谐振器固有频率变化的激励器/检测器。优选地，传感器包括差分谐振器结构，其中谐振器相对于彼此直线定位并被相同的气密密封覆盖。

5. 发明授权

US06297072B1 Method of fabrication of a microstructure having an internal cavity 有权
标题翻译：具有内腔的微结构的制造方法
公开(公告)号：US06297072B1
公开(公告)日：2001-10-02
申请号：US09293750
申请日：1999-04-16
申请人： Hendrikus A. C. Tilmans , Eric Beyne , Myriam Van de Peer
发明人： Hendrikus A. C. Tilmans , Eric Beyne , Myriam Van de Peer
IPC分类号： H01L2144
CPC分类号： B81C1/00293 , B81B7/0077 , G01J5/045 , G01L9/0042 , G01L9/0073 , G01P15/0802 , G01P15/125 , H01H1/0036 , H01H35/14 , H01L21/50 , H01L23/10 , H01L2224/16 , H01L2924/01025 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/01327 , H03H9/1057 , H01L2924/00
摘要： A method of fabricating a microstructure having an inside cavity. The method includes depositing a first layer or a first stack of layers in a substantially closed geometric configuration on a first substrate. Then, performing an indent on the first layer or on the top layer of said first stack of layers. Then, depositing a second layer or a second stack of layers substantially with said substantially closed geometric configuration on a second substrate. Then, aligning and bonding said first substrate on said second substrate such that a microstructure having a cavity is formed according to said closed geometry configuration.
摘要翻译：一种制造具有内腔的微结构的方法。该方法包括在第一基底上沉积基本封闭的几何构型的第一层或第一层叠层。然后，在所述第一层叠层的第一层或顶层上执行缩进。然后，将基本上具有所述基本上封闭的几何构型的第二层或第二层叠层沉积在第二衬底上。然后，将所述第一基板对准并粘结在所述第二基板上，使得根据所述封闭几何结构形成具有空腔的微结构。

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