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41. 发明申请

US20060263726A1 Pattern forming method and method of manufacturing semiconductor device 失效
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US20060263726A1
公开(公告)日：2006-11-23
申请号：US11431823
申请日：2006-05-11
申请人： Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura , Yasunobu Onishi
发明人： Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura , Yasunobu Onishi
IPC分类号： G03F7/20
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/162
摘要： A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film.
摘要翻译：图案形成方法包括在被处理膜上形成光致抗蚀剂膜，通过涂布法在光致抗蚀剂膜上形成用于保护光致抗蚀剂膜的浸渍液的保护膜，选择性地进行部分浸渍曝光通过浸渍液将该光致抗蚀剂膜，浸渍液体供给到光致抗蚀剂膜上，在形成保护膜之后，在进行浸渍曝光前，选择性地除去包含浸渍液的残留物质的残留物质，通过选择性地去除光致抗蚀剂膜的曝光区域或未曝光区域，去除保护膜，以及形成包括光致抗蚀剂膜的图案。

42. 发明授权

US06703181B1 Photosensitive composition having uniform concentration distribution of components and pattern formation method using the same 失效
标题翻译：具有均匀的组分浓度分布的光敏组合物和使用其的图案形成方法
公开(公告)号：US06703181B1
公开(公告)日：2004-03-09
申请号：US08709879
申请日：1996-09-09
申请人： Takao Hayashi , Yasunobu Onishi , Kazuo Sato , Kenji Chiba , Masataka Miyamura
发明人： Takao Hayashi , Yasunobu Onishi , Kazuo Sato , Kenji Chiba , Masataka Miyamura
IPC分类号： G03C176
CPC分类号： C08K5/3472 , C08K5/13 , C08K5/175 , G03F7/0045 , G03F7/039
摘要： There is provided a photosensitive composition suitable for a resist material. This photosensitive composition has a high sensitivity and a high resolution with respect to a light source having a short wavelength, does not cause a phase separation in a film state, and makes it possible to stably form fine resist patterns. The photosensitive composition contains a polymer obtained by protecting an alkali-soluble group of an alkali-soluble polymer by a group which is unstable with respect to an acid, a compound which generates an acid upon being irradiated with light, at least one compound which is selected from the group consisting of an imidazole compound, an alanine compound, an adenine compound, an adenosine compound, and a quaternary ammonium salt compound, and which increases miscibility in a resist film, and a phenol compound.
摘要翻译：提供了适用于抗蚀剂材料的光敏组合物。这种光敏组合物相对于具有短波长的光源具有高灵敏度和高分辨率，不会在膜状态下引起相分离，并且使得可以稳定地形成精细的抗蚀剂图案。感光性组合物含有通过相对于酸不稳定的基团，被光照射时产生酸的化合物保护碱溶性聚合物而获得的聚合物，至少一种化合物是选自咪唑化合物，丙氨酸化合物，腺嘌呤化合物，腺苷化合物和季铵盐化合物，并且增加抗蚀剂膜和酚化合物的混溶性。

43. 发明授权

US06225033B1 Method of forming a resist pattern 失效
标题翻译：形成抗蚀剂图案的方法
公开(公告)号：US06225033B1
公开(公告)日：2001-05-01
申请号：US09413543
申请日：1999-10-06
申请人： Yasunobu Onishi , Kentaro Matsunaga , Shoji Mimotogi , Katsuya Okumura
发明人： Yasunobu Onishi , Kentaro Matsunaga , Shoji Mimotogi , Katsuya Okumura
IPC分类号： G03F730
CPC分类号： G03F7/38
摘要： An anti-reflection film has been formed on an SiO2 film on a silicon substrate formed on a silicon wafer. A chemical amplification positive resist is formed on the anti-reflection film. The resist is exposed to light. Vapor of strong alkali is applied to a surface of the chemical amplification positive resist. The entire resist is developed with a developing solution, thereby forming a resist pattern.
摘要翻译：在形成在硅晶片上的硅衬底上的SiO 2膜上形成防反射膜。在抗反射膜上形成化学放大正光刻胶。抗蚀剂曝光。强碱的蒸气被施加到化学放大正性抗蚀剂的表面。整个抗蚀剂用显影液显影，从而形成抗蚀剂图案。

44. 发明授权

US5658706A Resist composition for forming a pattern comprising a pyridinium compound as an additive 失效
标题翻译：用于形成包含吡啶化合物作为添加剂的图案的抗蚀剂组合物
公开(公告)号：US5658706A
公开(公告)日：1997-08-19
申请号：US302319
申请日：1994-09-08
申请人： Hirokazu Niki , Hiromitsu Wakabayashi , Rumiko Hayase , Naohiko Oyasato , Yasunobu Onishi , Kazuo Sato , Kenji Chiba , Takao Hayashi
发明人： Hirokazu Niki , Hiromitsu Wakabayashi , Rumiko Hayase , Naohiko Oyasato , Yasunobu Onishi , Kazuo Sato , Kenji Chiba , Takao Hayashi
IPC分类号： C08K5/16 , C08L25/00 , C08L25/18 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/111
摘要： A resist composition for forming a pattern, which comprises (a) a compound represented by the following formula (1) and satisfying the following inequalities, ##STR1## wherein R.sup.1 is hydrogen atom or methyl group, R.sup.2 is a monovalent organic group, m is 0 or a positive integer, n is a positive integer, and m and n satisfying a condition of 0.03.ltoreq.n/(m+n).ltoreq.1, (b) a compound capable of generating an acid when irradiated with light, and (c) a nitrogen-containing compound, wherein a weight-average molecular weight, Mw and a number-average molecular weight, Mn satisfy the following inequality, 4,000.ltoreq.Mw.ltoreq.50,000, 1.10.ltoreq.Mw/Mn.ltoreq.2.50 (Mw and Mn respectively represent value converted in styrene).
摘要翻译：用于形成图案的抗蚀剂组合物，其包含（a）由下式（1）表示的化合物并满足以下不等式，其中R 1是氢原子或甲基，R 2是一价有机基团基团，m为0或正整数，n为正整数，m和n满足0.03≤n/（m + n）≤1的条件，（b）能够产生酸的化合物当用光照射时，和（c）含氮化合物，其中重均分子量Mw和数均分子量Mn满足以下不等式：4,000

45. 发明授权

US5063134A Photosensitive composition 失效
标题翻译：感光组合物
公开(公告)号：US5063134A
公开(公告)日：1991-11-05
申请号：US455783
申请日：1990-01-02
申请人： Rumiko Horiguchi , Shuzi Hayase , Yasunobu Onishi
发明人： Rumiko Horiguchi , Shuzi Hayase , Yasunobu Onishi
IPC分类号： C08G8/06 , C08G8/28 , C09D161/04 , G03F7/075
CPC分类号： G03F7/0758 , C08G8/06 , C08G8/28 , C09D161/04
摘要： A photosensitive composition contains a polymer having a unit represented by formula I, and a photosensitive agent: ##STR1## wherein each of R.sub.1 to R.sub.4 represents a hydrogen atom, an alkyl group, an alkoxyl group, or a substituted or non-substituted allyl group, at least one of R.sub.1 to R.sub.4 being an alkyl groups having 1 to 10 carbon atoms and containing silicon, l represents a positive integer, and each of a and b represents an integer from 1 to 3, and c represents an integer from 0 to 2, a+b+c not exceeding 4.
摘要翻译：感光性组合物含有具有式I表示的单元的聚合物和光敏剂：其中R 1〜R 4各自表示氢原子，烷基，烷氧基或取代或未取代的光敏剂，取代的烯丙基，R 1至R 4中的至少一个为具有1至10个碳原子且含有硅的烷基，l表示正整数，a和b各自表示1至3的整数，c表示整数从0到2，a + b + c不超过4。

46. 发明授权

US07319944B2 Method for a predicting a pattern shape by using an actual measured dissolution rate of a photosensitive resist 失效
标题翻译：通过使用光敏抗蚀剂的实际测量的溶解速率来预测图案形状的方法
公开(公告)号：US07319944B2
公开(公告)日：2008-01-15
申请号：US10760522
申请日：2004-01-21
申请人： Hiroko Nakamura , Shoji Mimotogi , Yasunobu Onishi
发明人： Hiroko Nakamura , Shoji Mimotogi , Yasunobu Onishi
IPC分类号： G06G7/48 , G06F17/50 , H01L21/00 , H01L21/66
CPC分类号： G03F7/30 , G03F1/36
摘要： A computer implemented method for development profile simulation in accordance with an embodiment of the present invention includes calculating optical intensities in a photosensitive resist, calculating a spatial average value of the optical intensities, reading a measured changing ratio of a dissolution rate of the photosensitive resist relating to an alkaline concentration changed by at least one of exposure dose on the photosensitive resist, a position in the thickness direction of the photosensitive resist and an alkaline concentration of developer for the photosensitive resist, obtaining a calculated dissolution rate by using the spatial average value and the measured changing ratio, and predicting a pattern shape of the photosensitive resist from the calculated dissolution rate.
摘要翻译：根据本发明的实施例的用于开发剖面模拟的计算机实现方法包括计算光敏抗蚀剂中的光强度，计算光强度的空间平均值，读取测量的光敏抗蚀剂溶解速率的变化率通过光敏抗蚀剂上的曝光剂量，感光性抗蚀剂的厚度方向上的位置和感光性抗蚀剂的显色剂的碱浓度中的至少一种而变化的碱性浓度，通过使用空间平均值求出计算出的溶解率，测量的变化率，并根据计算的溶解速率预测光敏抗蚀剂的图案形状。

47. 发明申请

US20060194449A1 Resist pattern forming method and method of manufacturing semiconductor device 审中-公开
标题翻译：抗蚀剂图案形成方法和半导体器件的制造方法
公开(公告)号：US20060194449A1
公开(公告)日：2006-08-31
申请号：US11350127
申请日：2006-02-09
申请人： Tomoyuki Takeishi , Shinichi Ito , Yasunobu Onishi , Tsuyoshi Shibata
发明人： Tomoyuki Takeishi , Shinichi Ito , Yasunobu Onishi , Tsuyoshi Shibata
IPC分类号： H01L21/31
CPC分类号： G03F7/38 , G03F7/0045 , H01L21/0276
摘要： A resist pattern forming method includes forming a chemically amplified resist film on a substrate, forming a latent image in the resist film by irradiating an energy ray, contacting a liquid to a surface of the resist film, increasing temperature of the resist film to first temperature after the forming the latent image and the contacting, the first temperature being lower than a reaction start temperature at which an acid catalysis reaction occurs in the resist film, maintaining the temperature of the resist film at the first temperature for a predetermined time, increasing the temperature of the resist film to second temperature being not lower than the reaction start temperature after a lapse of the predetermined time, decreasing the temperature of the resist film increased to the second temperature to a temperature lower than the reaction start temperature, and developing the resist film after the decreasing the temperature.
摘要翻译：抗蚀剂图形形成方法包括在基板上形成化学放大型抗蚀剂膜，通过照射能量射线在液体中形成潜像，使其与抗蚀剂膜的表面接触，使抗蚀剂膜的温度升高到第一温度在形成潜像和接触之后，第一温度低于在抗蚀剂膜中发生酸催化反应的反应开始温度，将抗蚀剂膜的温度保持在第一温度预定时间，增加抗蚀剂膜的温度与第二温度不低于经过规定时间后的反应开始温度，将抗蚀剂膜的温度降低到第二温度至比反应开始温度低的温度，并使抗蚀剂显影电影降温后。

48. 发明申请

US20050214695A1 Pattern forming method and method for manufacturing semiconductor device 审中-公开
标题翻译：图案形成方法和半导体器件的制造方法
公开(公告)号：US20050214695A1
公开(公告)日：2005-09-29
申请号：US11081579
申请日：2005-03-17
申请人： Hirokazu Kato , Yasunobu Onishi , Daisuke Kawamura
发明人： Hirokazu Kato , Yasunobu Onishi , Daisuke Kawamura
IPC分类号： G03F7/40 , B05D1/38 , G03F7/00 , G03F7/20 , G03F7/30 , H01L21/027 , H01L21/033
CPC分类号： H01L21/0337 , H01L21/0275
摘要： A pattern forming method which can suppress pattern collapse of a resist pattern comprises after developing a resist pattern formed from a resist film on a substrate, supplying a rinse agent onto the substrate to replace a developer on the substrate with the rinse agent, supplying an coating film material onto the substrate to replace at least a part of the rinse agent with the coating film material, wherein the coating film material contains a solvent and a solute different from the resist film, volatilizing the solvent in the coating film material to form an coating film covering the resist film on the substrate, removing at least a part of a surface of the coating film to expose at least a part of an upper surface of the resist pattern and form a mask pattern comprising the coating film, and processing the substrate using the mask pattern.
摘要翻译：可以抑制抗蚀剂图案的图案塌陷的图案形成方法包括在从基板上的抗蚀剂膜形成的抗蚀剂图案显影之后，将冲洗剂供应到基板上以用冲洗剂代替基板上的显影剂，将薄膜材料涂覆在基材上以用涂膜材料代替至少一部分漂洗剂，其中涂膜材料含有溶剂和不同于抗蚀剂膜的溶质，挥发涂膜材料中的溶剂以形成涂层膜，覆盖基板上的抗蚀剂膜，去除涂膜的表面的至少一部分以暴露抗蚀剂图案的上表面的至少一部分，并形成包含涂膜的掩模图案，并使用掩模图案。

49. 发明授权

US5580702A Method for forming resist patterns 失效
标题翻译：形成抗蚀剂图案的方法
公开(公告)号：US5580702A
公开(公告)日：1996-12-03
申请号：US357179
申请日：1994-12-13
申请人： Rumiko Hayase , Yasunobu Onishi , Hirokazu Niki , Noahiko Oyasato , Yoshihito Kobayashi , Shuzi Nayase
发明人： Rumiko Hayase , Yasunobu Onishi , Hirokazu Niki , Noahiko Oyasato , Yoshihito Kobayashi , Shuzi Nayase
IPC分类号： G03F7/023 , G03F7/039 , G03F7/30
CPC分类号： G03F7/0233 , G03F7/0392 , Y10S430/111 , Y10S430/146
摘要： Disclosed herein is a resist for forming patterns, which is greatly sensitive to ultraviolet rays an ionizing radiation, and which can therefore form a high-resolution resist pattern if exposed to ultra violet rays or an unionizing radiation. Hence, the resist is useful in a method of manufacturing semicon ductor devices having high integration densities. The resist comprises tert-butoxycarbonyl methoxypolyhydroxy styrene and an o-quinonediazide compound.
摘要翻译：本文公开了用于形成图案的抗蚀剂，其对于紫外线对电离辐射非常敏感，并且因此如果暴露于紫外线或组合辐射则可形成高分辨率抗蚀剂图案。因此，抗蚀剂可用于制造具有高积分密度的半导体器件的方法。抗蚀剂包括叔丁氧基羰基甲氧基聚羟基苯乙烯和邻醌二叠氮化合物。

50. 发明授权

US5403695A Resist for forming patterns comprising an acid generating compound and a polymer having acid decomposable groups 失效
标题翻译：防止包含酸产生化合物和具有酸可分解基团的聚合物的形成图案
公开(公告)号：US5403695A
公开(公告)日：1995-04-04
申请号：US876457
申请日：1992-04-30
申请人： Rumiko Hayase , Yasunobu Onishi , Hirokazu Niki , Naohiko Oyasato , Yoshihito Kobayashi , Shuzi Hayase
发明人： Rumiko Hayase , Yasunobu Onishi , Hirokazu Niki , Naohiko Oyasato , Yoshihito Kobayashi , Shuzi Hayase
IPC分类号： G03F7/023 , G03F7/039 , G03F7/30
CPC分类号： G03F7/0233 , G03F7/0392 , Y10S430/111 , Y10S430/146
摘要： Disclosed herein is a resist for forming patterns, which is greatly sensitive to ultraviolet rays an ionizing radiation, and which can therefore form a high-resolution resist pattern if exposed to ultra violet rays or an unionizing radiation. Hence, the resist is useful in a method of manufacturing semicon ductor devices having high integration densities. The resist comprises tert-butoxycarbonyl methoxypolyhydroxy styrene and an o-quinonediazide compound.
摘要翻译：本文公开了用于形成图案的抗蚀剂，其对于紫外线对电离辐射非常敏感，并且因此如果暴露于紫外线或组合辐射则可形成高分辨率抗蚀剂图案。因此，抗蚀剂可用于制造具有高积分密度的半导体器件的方法。抗蚀剂包括叔丁氧基羰基甲氧基聚羟基苯乙烯和邻醌二叠氮化合物。

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