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41. 发明授权

US07615486B2 Apparatus and method for integrated surface treatment and deposition for copper interconnect 有权
标题翻译：用于铜互连的综合表面处理和沉积的装置和方法
公开(公告)号：US07615486B2
公开(公告)日：2009-11-10
申请号：US11736522
申请日：2007-04-17
申请人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
发明人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
IPC分类号： H01L21/4763
CPC分类号： C23C16/54 , C23C16/45544 , H01L21/28562 , H01L21/76814 , H01L21/76826 , H01L21/76843 , H01L21/76861 , H01L21/76862 , H01L21/76873
摘要： A method and system for depositing films on a substrate for copper interconnect in an integrated system are provided to enable controlled-ambient transitions within an integrated system to limit exposure of the substrate to uncontrolled ambient conditions. The method includes moving the substrate into a processing chamber having a plurality of proximity heads. Within the processing chamber, barrier layer deposition is performed over a surface of the substrate using one of the plurality of proximity heads functioning to perform barrier layer ALD. In addition, the method includes moving the substrate from the processing chamber, through a transfer module of the integrated systems, into a processing module for performing copper seed layer deposition. Within the processing module for performing copper seed layer deposition, copper seed layer deposition is performed over the surface of the substrate. The processing chamber for performing the barrier layer ALD and the processing module for performing the copper seed layer deposition are parts of the integrated system.
摘要翻译：提供了一种用于在集成系统中的用于铜互连的衬底上沉积膜的方法和系统，以使集成系统内的受控环境转变能够限制衬底暴露于不受控制的环境条件。该方法包括将衬底移动到具有多个接近头的处理室中。在处理室内，使用用于执行阻挡层ALD的多个邻近头之一，在衬底的表面上进行阻挡层沉积。此外，该方法包括将基板从处理室通过集成系统的传递模块移动到用于执行铜种子层沉积的处理模块中。在用于进行铜种子层沉积的处理模块内，在衬底的表面上进行铜籽晶层沉积。用于执行阻挡层ALD的处理室和用于执行铜种子层沉积的处理模块是集成系统的一部分。

42. 发明申请

US20130040460A1 METHODS FOR ATOMIC LAYER DEPOSITION 有权
标题翻译：原子层沉积的方法
公开(公告)号：US20130040460A1
公开(公告)日：2013-02-14
申请号：US13605926
申请日：2012-09-06
申请人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
发明人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
IPC分类号： H01L21/768 , H01L21/4763
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： A method of depositing a thin film by atomic layer deposition (ALD) on a substrate surface is disclosed. The disclosed method includes placing an ALD deposition proximity head above the substrate with at least one gas channel configured to dispense a gas to an active process region of the substrate surface. The ALD deposition proximity head extends over and is being spaced apart from the active process region of the substrate surface when present. After a pulse of a first reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head, a pulse of a second reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head to react with the first reactant gas to form a portion of the thin layer of ALD film on the surface of substrate underneath the proximity head.
摘要翻译：公开了一种通过原子层沉积（ALD）在衬底表面上沉积薄膜的方法。所公开的方法包括将ALD沉积接近头放置在衬底上方，其中至少一个气体通道被配置为将气体分配到衬底表面的活性过程区域。 ALD沉积接近头在存在时延伸超过衬底表面的有效工艺区域并且与其间隔开。在将第一反应气体的脉冲分配在邻近头部下方的衬底表面的有源工艺区域上之后，第二反应气体的脉冲被分配在邻近头部下方的衬底表面的有源工艺区域上以与第一反应气体，以在邻近头部下方的基底表面上形成一部分ALD薄膜。

43. 发明申请

US20120248219A1 APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：US20120248219A1
公开(公告)日：2012-10-04
申请号：US13489235
申请日：2012-06-05
申请人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
发明人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
IPC分类号： B05B1/28
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： A proximity heads for dispensing reactants and purging gas to deposit a thin film by Atomic Layer Deposition (ALD) includes a plurality of sides. Extending over a portion of the substrate region and being spaced apart from the portion of the substrate region when present, the proximity head is rotatable so as to place each side in a direction of the substrate region, and is disposed in a vacuum chamber coupled to a carrier gas source to sustain a pressure for the proximity head during operation. Each side of the proximity head includes a gas conduit through which the reactant gas and the purging gas are sequentially dispensed, and at least two separate vacuum conduits on each side of the gas conduit to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate.
摘要翻译：用于分配反应物和吹扫气体以通过原子层沉积（ALD）沉积薄膜的邻近头包括多个侧面。当衬底区域的一部分延伸并与衬底区域的部分间隔开时，邻近头部是可旋转的，以便将每个侧面放置在衬底区域的方向上，并且设置在耦合到载体气体源，用于在操作期间维持邻近头部的压力。邻近头部的每一侧包括气体导管，反应气体和净化气体依次分配通过该气体导管，以及在气体导管的每一侧上的至少两个独立的真空管道，以将过量的反应气体，净化气体或沉积副产物从面对衬底的接近头的表面与衬底之间的反应体积。

44. 发明申请

US20080261412A1 APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION 有权
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：US20080261412A1
公开(公告)日：2008-10-23
申请号：US11736511
申请日：2007-04-17
申请人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
发明人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
IPC分类号： H01L21/31 , C23C16/54
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： The embodiments provide apparatus and methods of depositing conformal thin film on interconnect structures by providing processes and systems using an atomic layer deposition (ALD). More specifically, each of the ALD systems includes a proximity head that has a small reaction volume right above an active process region of the substrate surface. The proximity head small amount of reactants and purging gas to be distributed and pumped away from the small reaction volume between the proximity head and the substrate in relatively short periods, which increases the through-put. In an exemplary embodiment, a proximity head for dispensing reactants and purging gas to deposit a thin film by atomic layer deposition (ALD) is provided. The proximity head is configured to sequentially dispensing a reactant gas and a purging gas to deposit a thin ALD film under the proximity head. The proximity head covers an active process region of a substrate surface. The proximity head also includes at least one vacuum channel to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate. The proximity includes a plurality of sides, each side being configured to dispense either a reactant gas or a purging gas on the substrate surface underneath the proximity head. Each side has at least one vacuum channel.
摘要翻译：实施例提供了通过提供使用原子层沉积（ALD）的工艺和系统在互连结构上沉积保形薄膜的装置和方法。更具体地，每个ALD系统包括在基板表面的有效工艺区域正上方具有小的反应体积的邻近头部。接近头部较少量的反应物和净化气体在相对较短的时间段内被分配并从相邻头部和基底之间的小的反应体积中泵出，这增加了通过量。在一个示例性实施例中，提供了用于分配反应物和吹扫气体以通过原子层沉积（ALD）沉积薄膜的邻近头。接近头被配置为顺序地分配反应气体和净化气体，以在邻近头部附近沉积薄的ALD膜。接近头覆盖衬底表面的活性过程区域。接近头还包括至少一个真空通道，以从邻近头部的面向衬底的表面和衬底之间的反应体积拉出过量的反应气体，吹扫气体或沉积副产物。邻近部分包括多个侧面，每个侧面被构造成在邻近头部下方的衬底表面上分配反应物气体或净化气体。每侧至少有一个真空通道。

45. 发明申请

US20080260963A1 APPARATUS AND METHOD FOR PRE AND POST TREATMENT OF ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于预处理原子层沉积的装置和方法
公开(公告)号：US20080260963A1
公开(公告)日：2008-10-23
申请号：US11736514
申请日：2007-04-17
申请人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
发明人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
IPC分类号： C23C14/02 , B05B15/00
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/45536 , H01L21/02063 , H01L21/02068 , H01L21/28562 , H01L21/76814 , H01L21/76826 , H01L21/76843 , H01L21/76861 , H01L21/76862
摘要： The embodiments fill the needs of systems and processes that perform substrate surface treatment to provide homogenous, clean, and sometimes activated surface in order to provide good adhesion between layers to improve metal migration and void propagation. In an exemplary embodiment, a proximity head for treating a substrate surface is provided. The proximity head is configured to dispense a treatment gas to treat an active process region of a substrate surface under the proximity head. The proximity head covers the action process region of the substrate surface and the proximity head includes at least one vacuum channel to pull excess treatment gas from a reaction volume between the proximity head and the substrate. The proximity head has an excitation chamber to excite the treatment gas before the treatment gas being dispensed on the active process region portion of the substrate surface.
摘要翻译：这些实施例填补了执行基板表面处理以提供均匀，清洁和有时被激活的表面的系统和工艺的需要，以便在层之间提供良好的粘附以改善金属迁移和空隙传播。在示例性实施例中，提供了用于处理基板表面的邻近头。邻近头部被配置成分配处理气体以处理邻近头部下方的基底表面的活性过程区域。邻近头部覆盖衬底表面的动作过程区域，并且邻近头部包括至少一个真空通道，以从邻近头部和衬底之间的反应体积拉出过量的处理气体。接近头具有激励室，以在将处理气体分配在衬底表面的有源工艺区域部分之前激发处理气体。

46. 发明申请

US20080260940A1 APPARATUS AND METHOD FOR INTEGRATED SURFACE TREATMENT AND DEPOSITION FOR COPPER INTERCONNECT 有权
标题翻译：用于铜互连的集成表面处理和沉积的装置和方法
公开(公告)号：US20080260940A1
公开(公告)日：2008-10-23
申请号：US11736522
申请日：2007-04-17
申请人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
发明人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
IPC分类号： B05D5/12 , C23C14/14
CPC分类号： C23C16/54 , C23C16/45544 , H01L21/28562 , H01L21/76814 , H01L21/76826 , H01L21/76843 , H01L21/76861 , H01L21/76862 , H01L21/76873
摘要： A method and system for depositing films on a substrate for copper interconnect in an integrated system is provided. The method includes moving the substrate into a processing chamber having a plurality of proximity heads. Selected ones of the proximity heads is configured to perform at least one of surface treatments and atomic layer depositions (ALDs). The processing chamber is part of the integrated system. Within the processing chamber, barrier layer deposition is performed over a surface of the substrate using one of the plurality of proximity heads functioning to perform barrier layer ALD. In addition, the method includes moving the substrate from the processing chamber, through a transfer module of the integrated system and into a processing module for performing copper seed layer deposition. The processing module for performing copper seed layer deposition is part of the integrated system. Within the processing module for performing copper seed layer deposition, copper seed layer deposition is performed over the surface of the substrate. The integrated system enables controlled-ambient transitions within the integrated system to limit exposure of the substrate to uncontrolled ambient conditions outside of the integrated system.
摘要翻译：提供了一种用于在集成系统中的用于铜互连的衬底上沉积膜的方法和系统。该方法包括将衬底移动到具有多个接近头的处理室中。所选择的接近头被配置为执行表面处理和原子层沉积（ALD）中的至少一个。处理室是集成系统的一部分。在处理室内，使用用于执行阻挡层ALD的多个邻近头之一，在衬底的表面上进行阻挡层沉积。此外，该方法包括通过集成系统的转移模块将处理室的衬底移动到用于执行铜种子层沉积的处理模块中。用于执行铜种子层沉积的处理模块是集成系统的一部分。在用于进行铜种子层沉积的处理模块内，在衬底的表面上进行铜籽晶层沉积。集成系统使集成系统内的受控环境转换能够将基板的曝光限制在集成系统外部的不受控制的环境条件下。

47. 发明申请

US20090134520A1 PROCESS INTEGRATION SCHEME TO LOWER OVERALL DIELECTRIC CONSTANT IN BEOL INTERCONNECT STRUCTURES 审中-公开
标题翻译：过程集成方案降低BEOL互连结构中的总体电介质常数
公开(公告)号：US20090134520A1
公开(公告)日：2009-05-28
申请号：US12366235
申请日：2009-02-05
申请人： Nicolas Bright , David Hemker , Fritz C. Redeker , Yezdi Dordi
发明人： Nicolas Bright , David Hemker , Fritz C. Redeker , Yezdi Dordi
IPC分类号： H01L23/52
CPC分类号： H01L21/76822 , H01L21/76805 , H01L21/76807 , H01L21/76816 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L2924/0002 , H01L2924/00
摘要： Back-End of Line (BEoL) interconnect structures, and methods for their manufacture, are provided. The structures are characterized by narrower conductive lines and reduced overall dielectric constant values. Conformal diffusion barrier layers, and selectively formed capping layers, are used to isolate the conductive lines and vias from surrounding dielectric layers in the interconnect structures. The methods of the invention employ techniques to narrow the openings in photoresist masks in order to define narrower vias. More narrow vias increase the amount of misalignment that can be tolerated between the vias and the conductive lines.
摘要翻译：提供了后端（BEoL）互连结构及其制造方法。这些结构的特征在于导线越窄，总体介电常数值越小。保形扩散阻挡层和选择性形成的覆盖层用于将导线和通孔与互连结构中的周围电介质层隔离。本发明的方法采用技术来缩小光致抗蚀剂掩模中的开口，以便限定更窄的通孔。更窄的通孔增加了通孔和导电线之间可以容许的不对准量。

48. 发明授权

US07521358B2 Process integration scheme to lower overall dielectric constant in BEoL interconnect structures 有权
标题翻译：过程集成方案，以降低BEoL互连结构中的总体介电常数
公开(公告)号：US07521358B2
公开(公告)日：2009-04-21
申请号：US11732198
申请日：2007-04-02
申请人： Nicolas Bright , Dave Hemker , Fritz C. Redeker , Yezdi Dordi
发明人： Nicolas Bright , Dave Hemker , Fritz C. Redeker , Yezdi Dordi
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/76822 , H01L21/76805 , H01L21/76807 , H01L21/76816 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L2924/0002 , H01L2924/00
摘要： Back-End of Line (BEoL) interconnect structures, and methods for their manufacture, are provided. The structures are characterized by narrower conductive lines and reduced overall dielectric constant values. Conformal diffusion barrier layers, and selectively formed capping layers, are used to isolate the conductive lines and vias from surrounding dielectric layers in the interconnect structures. The methods of the invention employ techniques to narrow the openings in photoresist masks in order to define narrower vias. More narrow vias increase the amount of misalignment that can be tolerated between the vias and the conductive lines.
摘要翻译：提供了后端（BEoL）互连结构及其制造方法。这些结构的特征在于导线越窄，总介电常数值越小。保形扩散阻挡层和选择性形成的覆盖层用于将导线和通孔与互连结构中的周围电介质层隔离。本发明的方法采用技术来缩小光致抗蚀剂掩模中的开口，以便限定更窄的通孔。更窄的通孔增加了通孔和导电线之间可以容许的不对准量。

49. 发明授权

US09076844B2 Process integration scheme to lower overall dielectric constant in BEoL interconnect structures 有权
公开(公告)号：US09076844B2
公开(公告)日：2015-07-07
申请号：US12366235
申请日：2009-02-05
申请人： Nicolas Bright , David Hemker , Fritz C. Redeker , Yezdi Dordi
发明人： Nicolas Bright , David Hemker , Fritz C. Redeker , Yezdi Dordi
IPC分类号： H01L23/52 , H01L29/40 , H01L21/768
CPC分类号： H01L21/76822 , H01L21/76805 , H01L21/76807 , H01L21/76816 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L2924/0002 , H01L2924/00
摘要： Back-End of Line (BEoL) interconnect structures, and methods for their manufacture, are provided. The structures are characterized by narrower conductive lines and reduced overall dielectric constant values. Conformal diffusion barrier layers, and selectively formed capping layers, are used to isolate the conductive lines and vias from surrounding dielectric layers in the interconnect structures. The methods of the invention employ techniques to narrow the openings in photoresist masks in order to define narrower vias. More narrow vias increase the amount of misalignment that can be tolerated between the vias and the conductive lines.

50. 发明授权

US08916232B2 Method for barrier interface preparation of copper interconnect 有权
标题翻译：铜互连屏障界面制备方法
公开(公告)号：US08916232B2
公开(公告)日：2014-12-23
申请号：US11639050
申请日：2006-12-13
申请人： Hyungsuk Alexander Yoon , John Boyd , Yezdi Dordi , Fritz C. Redeker
发明人： Hyungsuk Alexander Yoon , John Boyd , Yezdi Dordi , Fritz C. Redeker
IPC分类号： B05D5/12 , C23C18/16 , H01L21/00 , H01L21/288 , H01L21/321 , H01L21/67 , H01L21/768 , H01L21/3213 , H01L21/02
CPC分类号： H01L21/67196 , C23C14/22 , C23C16/06 , C23C16/44 , C23C16/45544 , C23C16/52 , C23C18/1619 , C23C18/1632 , C23C18/1653 , C23C18/38 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/02074 , H01L21/288 , H01L21/321 , H01L21/32115 , H01L21/32135 , H01L21/32136 , H01L21/67028 , H01L21/67161 , H01L21/67201 , H01L21/67207 , H01L21/6723 , H01L21/76807 , H01L21/76814 , H01L21/7684 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76861 , H01L21/76862 , H01L21/76873 , H01L21/76874 , H01L21/76876 , H01L21/76879
摘要： The embodiments fill the need of improving electromigration and reducing stress-induced voids of copper interconnect by enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect. The adhesion between the barrier layer and the copper layer can be improved by making the barrier layer metal-rich prior copper deposition and by limiting the amount of oxygen the barrier layer is exposed prior to copper deposition. Alternatively, a functionalization layer can be deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect with good adhesion between the barrier layer and the copper layer. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in an integrated system in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, wherein after depositing the metallic barrier layer, the substrate is transferred and processed in controlled environment to prevent the formation of metallic barrier oxide. The method also includes depositing the functionalization layer over the metallic layer in the integrated system. The method further includes depositing the copper layer in the copper interconnect structure in the integrated system after the functionalization layer is deposited over the metallic barrier layer.
摘要翻译：实施例满足了通过能够在铜互连中沉积薄且保形的阻挡层和铜层来改善电迁移并减少铜互连的应力诱导空隙的需要。阻挡层和铜层之间的粘附性可以通过在铜沉积之前使阻挡层富金属的先前铜沉积和限制阻挡层暴露的氧的量来改善。或者，功能化层可以沉积在阻挡层上，以使得铜层能够在铜互连中沉积，并且在阻挡层和铜层之间具有良好的粘合性。一种制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层以帮助在一个集成系统中铜层互连中铜层沉积以便改善铜互连的电迁移性能的示例性方法被提供。该方法包括沉积金属阻挡层以在集成系统中对铜互连结构进行排列，其中在沉积金属阻挡层之后，将基底在受控环境中转移和加工以防止形成金属阻挡氧化物。该方法还包括在集成系统中的金属层上沉积功能化层。该方法还包括在官能化层沉积在金属阻挡层上之后，在集成系统中的铜互连结构中沉积铜层。

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