专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US5491106A Method for growing a compound semiconductor and a method for producing a semiconductor laser 失效
标题翻译：生长化合物半导体的方法和半导体激光器的制造方法
公开(公告)号：US5491106A
公开(公告)日：1996-02-13
申请号：US97316
申请日：1993-07-23
申请人： Akinori Seki , Hiroyuki Hosoba , Toshio Hata , Masafumi Kondo , Takahiro Suyama , Sadayoshi Matsui
发明人： Akinori Seki , Hiroyuki Hosoba , Toshio Hata , Masafumi Kondo , Takahiro Suyama , Sadayoshi Matsui
IPC分类号： H01L21/20 , H01L21/203 , H01S5/00 , H01S5/223 , H01S5/323 , H01L21/302
CPC分类号： H01S5/32308 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02631 , H01L21/02658 , H01S5/2231 , H01S5/32316
摘要： A method for growing a compound semiconductor layer of Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1) on a compound semiconductor substrate uses a molecular beam epitaxial apparatus, the method including the steps of providing the substrate having a GaAs layer on an upper surface thereof, thermally etching the GaAs layer by heating the substrate at a temperature and irradiating the GaAs layer with a gallium molecular beam and an arsenic molecular beam to expose the upper surface of the substrate, and growing the Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1) layer on the upper surface of the substrate.
摘要翻译：在化合物半导体衬底上生长Al x Ga 1-x As（0≤x≤1）的化合物半导体层的方法使用分子束外延装置，该方法包括以下步骤：将具有GaAs层的衬底通过在温度下加热衬底并用镓分子束和砷分子束照射GaAs层来暴露衬底的上表面，并且生长Al x Ga 1-x As（0 < = x <1）层。

42. 发明授权

US5271028A Semiconductor laser device 失效
公开(公告)号：US5271028A
公开(公告)日：1993-12-14
申请号：US918462
申请日：1992-07-22
申请人： Masafumi Kondo , Takahiro Suyama , Shinji Kaneiwa , Toshio Hata , Hiroyuki Hosoba , Sadayoshi Matsui
发明人： Masafumi Kondo , Takahiro Suyama , Shinji Kaneiwa , Toshio Hata , Hiroyuki Hosoba , Sadayoshi Matsui
IPC分类号： H01L21/203 , H01S5/00 , H01S5/223 , H01S5/30 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2232 , H01S5/305 , H01S5/2231 , H01S5/2237 , H01S5/3081 , H01S5/32308 , H01S5/3432
摘要： A semiconductor laser device which can effectively confine electrons and positive holes is disclosed. The semiconductor laser device includes a semiconductor substrate of a first conductivity type, a current blocking layer of a second conductivity type, a first semiconductor layer of the first conductivity type made of a III-V group compound semiconductor, an active layer made of a III-V group compound semiconductor, and a second semiconductor layer. The semiconductor substrate has a ridge-type mesa having (n11)A planes. The current blocking layer is formed on the semiconductor substrate other than the top face of the mesa. The first semiconductor layer is formed on the entire surface of the current blocking layer and on the top face of the mesa. The active layer is formed on the first semiconductor layer. The second semiconductor layer is formed on the active layer. The second semiconductor layer has inclined portions, and is made of a III-V group compound semiconductor containing an amphoteric element as an impurity so that the inclined portions are of the first conductivity type and the other portions are of the second conductivity type.

43. 发明授权

US4984244A Semiconductor laser device 失效
公开(公告)号：US4984244A
公开(公告)日：1991-01-08
申请号：US406903
申请日：1989-09-13
申请人： Saburo Yamamoto , Taiji Morimoto , Kazuaki Sasaki , Masaki Kondo , Takahiro Suyama , Masafumi Kondo
发明人： Saburo Yamamoto , Taiji Morimoto , Kazuaki Sasaki , Masaki Kondo , Takahiro Suyama , Masafumi Kondo
IPC分类号： H01S5/00 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： A semiconductor laser device is disclosed which comprises a semiconductor substrate, a striped mesa disposed on the substrate and having an active layer for laser oscillation, a current injection layer disposed on the striped mesa and having a width smaller than that of the striped mesa, and a burying layer disposed on both sides of the current injection layer so as to come into contact with the side walls of the current injection layer, the burying layer being capable of absorbing laser light produce in the active layer and of preventing current from flowing through the outside of the striped mesa.

44. 发明授权

US6023484A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US6023484A
公开(公告)日：2000-02-08
申请号：US694594
申请日：1996-08-09
申请人： Mitsuhiro Matsumoto , Takahiro Suyama
发明人： Mitsuhiro Matsumoto , Takahiro Suyama
IPC分类号： H01S5/00 , H01S5/22 , H01S5/223 , H01S5/30 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/2206 , H01S5/3054
摘要： The semiconductor laser device of the invention includes: an n-type semiconductor and a semiconductor multi-layer structure formed on the n-type semiconductor. The semiconductor multi-layer structure includes: an active layer; an n-type first cladding layer and a p-type second cladding layer which are disposed so as to sandwich the active layer therebetween; an n-type current/light confinement layer having a stripe-shaped groove portion for injecting a current into a selected region of the active layer; and a p-type third cladding layer formed so as to bury the stripe-shaped groove portion of the n-type current/light confinement layer. In the semiconductor laser device, the current/light confinement layer contains Si as a dopant and the n-type first cladding layer contains substantially no Si as a dopant.
摘要翻译：本发明的半导体激光器件包括n型半导体和形成在n型半导体上的半导体多层结构。半导体多层结构包括：有源层; n型第一包层和p型第二包覆层，以将活性层夹在其间; n型电流/光限制层，其具有用于将电流注入到所述有源层的选定区域中的条形槽部; 以及形成为埋入n型电流/光限制层的条形槽部的p型第三覆层。在半导体激光装置中，电流/光限制层含有Si作为掺杂剂，n型第一包层基本上不含Si作为掺杂剂。

45. 发明授权

US5909425A Optical information reproduction apparatus having a semiconductor laser device light source 失效
标题翻译：具有半导体激光装置光源的光信息再生装置
公开(公告)号：US5909425A
公开(公告)日：1999-06-01
申请号：US844278
申请日：1997-04-18
申请人： Takahiro Suyama , Mitsuhiro Matsumoto , Mototaka Taneya
发明人： Takahiro Suyama , Mitsuhiro Matsumoto , Mototaka Taneya
IPC分类号： G11B7/125 , H01S5/00 , H01S5/065 , G11B7/00
CPC分类号： G11B7/127 , H01S5/0658
摘要： An optical information reproduction apparatus includes a semiconductor laser device as a light source which provides oscillation as periodic pulse waves upon application of a DC current. The semiconductor laser device is disposed so that an optical distance L from a light-emitting point of the semiconductor laser device to a recording surface of an optical recording medium satisfies the following relationship: TP TP+(2L/C), where T is a period of pulse waves which are output from the semiconductor laser device in absence of a returning light from the optical recording medium; TP is a pulse width of the respective pulse waves which is defined as a width of a portion of the respective pulse waves, the portion having intensities which correspond to 10% or more of the peak intensity of the respective pulse waves; and C is a speed of light through air.
摘要翻译：光信息再现装置包括作为在施加直流电流时作为周期性脉冲波提供振荡的光源的半导体激光装置。半导体激光器件被设置为使得从半导体激光器件的发光点到光记录介质的记录表面的光学距离L满足以下关系：TP <（4L / C）和T> TP +（2L / C），其中T是在不存在来自光记录介质的返回光的情况下从半导体激光器件输出的脉冲周期; TP是各个脉波的脉冲宽度，其被定义为各个脉冲波的一部分的宽度，该部分的强度对应于各个脉冲波的峰值强度的10％以上; C是通过空气的光速。

46. 发明授权

US6055255A Semiconductor laser device and method for producing the same 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US6055255A
公开(公告)日：2000-04-25
申请号：US790815
申请日：1997-01-30
申请人： Takahiro Suyama , Ken Ohbayashi , Mitsuhiro Matsumoto
发明人： Takahiro Suyama , Ken Ohbayashi , Mitsuhiro Matsumoto
IPC分类号： H01S5/06 , H01S5/065 , H01S5/22 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/0601 , H01S5/0658 , H01S5/2219
摘要： A semiconductor laser device includes: a semiconductor substrate of a first conductivity type; a layered structure including at least a first cladding layer of the first conductivity type, an active layer, and a second cladding layer of a second conductivity type. The layered structure is provided on the semiconductor substrate. The semiconductor laser device also includes: a current blocking structure, having a striped concave portion therein, formed on the layered structure; and a third cladding layer of the second conductivity type provided so as to cover the striped concave portion and the current blocking structure. The current blocking structure includes at least a saturable absorbing layer having a forbidden band width which is substantially equal to a forbidden band width of the active layer.
摘要翻译：半导体激光器件包括：第一导电类型的半导体衬底; 包括至少第一导电类型的第一包层，有源层和第二导电类型的第二包层的层状结构。层状结构设置在半导体基板上。半导体激光装置还包括：形成在层状结构上的具有条纹凹部的电流阻挡结构; 以及第二导电类型的第三包覆层，以覆盖条纹凹部和电流阻挡结构。电流阻挡结构至少包括具有禁带宽度的可饱和吸收层，其基本上等于有源层的禁带宽度。

47. 发明授权

US5111470A Semiconductor laser device and a method of fabricating the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US5111470A
公开(公告)日：1992-05-05
申请号：US685415
申请日：1991-04-12
申请人： Hiroyuki Hosoba , Akinori Seki , Toshio Hata , Masafumi Kondou , Takahiro Suyama , Sadayoshi Matsui
发明人： Hiroyuki Hosoba , Akinori Seki , Toshio Hata , Masafumi Kondou , Takahiro Suyama , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/209 , H01S5/32316
摘要： A semiconductor laser device is provided which includes a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure containing an Al.sub.x Ga.sub.1-x As (0 y) active layer for laser oscillation formed on the first cladding layer, an Al.sub.x Ga.sub.1-x As (0 y) active layer for laser oscillation, an AlGaAs (0

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式