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41. 发明授权

US07548050B2 Switching power supply device and semiconductor integrated circuit 有权
标题翻译：开关电源装置和半导体集成电路
公开(公告)号：US07548050B2
公开(公告)日：2009-06-16
申请号：US11979093
申请日：2007-10-31
申请人： Nobuyuki Shirai , Ryotaro Kudo
发明人： Nobuyuki Shirai , Ryotaro Kudo
IPC分类号： G05F1/40
CPC分类号： H03K17/6871 , H02M3/1588 , H02M2001/0032 , H02M2001/0048 , H03K17/165 , Y02B70/1466 , Y02B70/1491 , Y02B70/16
摘要： A capacitor is disposed between the output side and the ground potential of an inductor which creates an output voltage. A first switch element supplies a current from an input voltage to an input side of the inductor, and a second switch element which is turned on when the first switch element is off sets the input side of the inductor to a prescribed potential. A control circuit detects the arrival of the voltage on the input side of the inductor at a high voltage corresponding to the input voltage when the load circuit is in a light load state and the second switch element is off, and turns on the first switch element. It invalidates the detection output of the voltage detecting circuit when the load circuit is in a heavy load state and, after the second switch element is turned off, turns on the first switch element.
摘要翻译：电感器设置在产生输出电压的电感器的输出侧和接地电位之间。第一开关元件将电流从输入电压提供给电感器的输入侧，并且当第一开关元件断开时导通的第二开关元件将电感器的输入侧设定为规定电位。当负载电路处于轻负载状态并且第二开关元件断开时，控制电路以对应于输入电压的高电压检测电感器的输入侧的电压到达，并且接通第一开关元件。当负载电路处于重负载状态时，使电压检测电路的检测输出无效，并且在第二开关元件断开之后，导通第一开关元件。

42. 发明申请

US20080224676A1 Voltage Clamp Circuit, a Switching Power Supply Device, a Semiconductor Integrated Circuit Device, and a Voltage Level Conversion Circuit 有权
标题翻译：电压钳位电路，开关电源装置，半导体集成电路装置和电压电平转换电路
公开(公告)号：US20080224676A1
公开(公告)日：2008-09-18
申请号：US10586687
申请日：2005-01-14
申请人： Ryotaro Kudo , Koji Tateno
发明人： Ryotaro Kudo , Koji Tateno
IPC分类号： G05F1/00 , H03K5/08
CPC分类号： H03K5/08 , H02M7/538
摘要： The present invention provides a voltage clamping circuit which is operated in a stable manner with the simple constitution and a switching power source device which enables a high-speed operation. In a switching power source device, one of source/drain routes is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current which is made to flow in an inductor such that the output voltage assumes a predetermined voltage and a second switching element which clamps an reverse electromotive voltage generated in the inductor when the first switching element is turned off to a predetermined potential. In such a switching power source device, the voltage clamping circuit is used in a feedback route for setting a dead time.
摘要翻译：本发明提供一种以简单结构稳定运行的电压钳位电路和能够进行高速运行的开关电源装置。在开关电源装置中，源/漏路径中的一个连接到输入电压被提供给的输入端，要限制的预定电压被提供给栅极，并且使用在另一个之间提供电流源的MOSFET 源/漏路径和电路的接地电位，从另一个源/漏路径获得对应于输入电压的钳位输出电压。开关电源装置还包括第一开关元件，其控制使得在电感器中流动的电流，使得输出电压呈现预定电压;以及第二开关元件，其在第一开关元件中钳位在电感器中产生的反向电动势电压开关元件被切断到预定电位。在这种开关电源装置中，钳位电路用于设置死区时间的反馈路径。

43. 发明申请

US20080129273A1 POWER SUPPLY DEVICE AND SWITCHING POWER SUPPLY DEVICE 有权
标题翻译：电源装置和开关电源装置
公开(公告)号：US20080129273A1
公开(公告)日：2008-06-05
申请号：US12017706
申请日：2008-01-22
申请人： Koji TATENO , Ryotaro Kudo , Shin Chiba , Kyoichi Hosokawa , Toshio Nagasawa
发明人： Koji TATENO , Ryotaro Kudo , Shin Chiba , Kyoichi Hosokawa , Toshio Nagasawa
IPC分类号： G05F3/16
CPC分类号： H02M3/1588 , H01L2224/48137 , H01L2224/48247 , H02M2001/0009 , Y02B70/1466
摘要： In a driver circuit constructing a switching power supply device that switches power transistors passing a current through a coil by a PWM mode, a current detection transistor, which is smaller in size than the low-potential side power transistor, and a current detection resistor are provided in parallel to the low-potential side power transistor. The same control voltage as the power transistor is applied to the control terminal of the current detection transistor. An operational amplifier is formed, that has the potential of the connection node between the current detection transistor and the current detection resistor applied to its inverse input terminal and a feedback loop, so as to make a pair of input terminals of the operational amplifier be at the same potential. A signal produced by the current detection resistor is thus outputted as a current detection signal.
摘要翻译：在构成开关电源装置的驱动电路中，通过PWM模式切换通过线圈的电流的开关电源装置，尺寸小于低电位侧功率晶体管的电流检测晶体管和电流检测电阻器与低电位侧功率晶体管并联提供。与功率晶体管相同的控制电压施加到电流检测晶体管的控制端。形成运算放大器，其具有电流检测晶体管和施加到其反相输入端的电流检测电阻之间的连接节点的电位和反馈环路，以使运算放大器的一对输入端子处于同样的潜力。因此，由电流检测电阻器产生的信号作为电流检测信号被输出。

44. 发明申请

US20070262761A1 SWITCHING POWER SUPPLY 失效
标题翻译：切换电源
公开(公告)号：US20070262761A1
公开(公告)日：2007-11-15
申请号：US11621664
申请日：2007-01-10
申请人： Takuya ISHIGAKI , Takashi Sase , Akihiko Kanouda , Koji Kateno , Ryotaro Kudo
发明人： Takuya ISHIGAKI , Takashi Sase , Akihiko Kanouda , Koji Kateno , Ryotaro Kudo
IPC分类号： G05F1/46
CPC分类号： H02M3/156 , H02M2001/0009
摘要： In a switching power supply apparatus for performing a switching control of a power MOS transistor that flows current to a coil and converting input voltage into output voltage, even if there occurs offset voltage in a current sensing operational amplifier, source potential of a current sensing MOS transistor is precisely kept at source potential of a low side power MOS transistor. For example, an offset cancel capacitor is arranged at an inverting input terminal of the current sensing operational amplifier, and voltage in the direction to offset the offset voltage occurring in the operational amplifier is charged to this capacitor.
摘要翻译：在用于对电流流向线圈并将输入电压转换为输出电压的功率MOS晶体管的开关控制的开关电源装置中，即使在电流感测运算放大器中发生偏移电压，电流感测MOS的源极电位晶体管被精确地保持在低边功率MOS晶体管的源极电位。例如，偏移消除电容器被布置在电流感测运算放大器的反相输入端子处，并且将在运算放大器中发生的偏移电压偏移的方向上的电压充电到该电容器。

45. 发明授权

US07138786B2 Power supply driver circuit 失效
公开(公告)号：US07138786B2
公开(公告)日：2006-11-21
申请号：US11287293
申请日：2005-11-28
申请人： Takuya Ishigaki , Takashi Sase , Akihiko Kanouda , Koji Tateno , Ryotaro Kudo
发明人： Takuya Ishigaki , Takashi Sase , Akihiko Kanouda , Koji Tateno , Ryotaro Kudo
IPC分类号： G05F1/613
CPC分类号： H02M3/1588 , H02M2001/0009 , Y02B70/1466
摘要： A power supply driver circuit with low power losses and desired response characteristics with respect to changes in output and its miniaturization is provided. In a driver IC constituting a switched-mode power supply equipment controlling the switching, by pulse width modulation, of first and second power transistors passing a current in a coil, and outputting a voltage bucked or boosted from an input voltage, current sensing with desired responsiveness is enabled by providing a switching transistor between an inverted input terminal and a non-inverted input terminal of an operational amplifier, preventing, while the second power transistor is ON, the generation of a potential which is undefined when first power transistor is ON, i.e. when the second power transistor is OFF, and maintaining a node potential in a state in which the potential is well defined.

46. 发明授权

US09418986B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09418986B2
公开(公告)日：2016-08-16
申请号：US13589160
申请日：2012-08-19
申请人： Tomoaki Uno , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa
发明人： Tomoaki Uno , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa
IPC分类号： H01L27/088 , H01L23/495 , H01L25/16 , H02M1/32 , H02M3/156 , H01L21/8234 , H01L23/00 , H01L25/07 , H02M1/00
CPC分类号： H01L27/088 , H01L21/823487 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/37 , H01L24/40 , H01L24/73 , H01L25/074 , H01L25/16 , H01L2224/05554 , H01L2224/0603 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/3754 , H01L2224/40095 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73221 , H01L2224/73265 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H02M1/32 , H02M3/156 , H02M2001/0009 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor device is improved in reliability. A power MOSFET for switching, and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion, and sealed in a resin. To first and second source pads for outputting the current flowing in the power MOSFET, a metal plate is bonded. A third source pad for sensing the source voltage of the power MOSFET is at a position not overlapping the metal plate. A coupled portion between a source wire forming the third pad and another source wire forming the first and second pads is at a position overlapping the metal plate.
摘要翻译：提高了半导体器件的可靠性。在一个半导体芯片中形成用于切换的功率MOSFET和用于感测功率MOSFET中流过的电流的感测MOSFET，该功率MOSFET的面积小于功率MOSFET。半导体芯片安装在芯片安装部分上，并密封在树脂中。对于用于输出在功率MOSFET中流动的电流的第一和第二源极焊盘，金属板被接合。用于感测功率MOSFET的源极电压的第三源极焊盘位于与金属板不重叠的位置。形成第三焊盘的源极线和形成第一和第二焊盘的另一源极之间的耦合部分处于与金属板重叠的位置。

47. 发明授权

US08680830B2 Power supply device 有权
标题翻译：电源设备
公开(公告)号：US08680830B2
公开(公告)日：2014-03-25
申请号：US13229781
申请日：2011-09-12
申请人： Ryotaro Kudo , Tomoaki Uno , Koji Tateno , Hideo Ishii , Kazuyuki Umezu , Koji Saikusa
发明人： Ryotaro Kudo , Tomoaki Uno , Koji Tateno , Hideo Ishii , Kazuyuki Umezu , Koji Saikusa
IPC分类号： G05F1/00
CPC分类号： H02M3/158 , G06F1/26 , H02M3/1584 , H02M2003/1586
摘要： Miniaturization of a multiphase type power supply device can be achieved. A power supply control unit in which, for example, a microcontroller unit, a memory unit and an analog controller unit are formed over a single chip, a plurality of PWM-equipped drive units, and a plurality of inductors configure a multiphase power supply. The microcontroller unit outputs clock signals each having a frequency and a phase defined based on a program on the memory unit to the respective PWM-equipped drive units. The analog controller unit detects a difference between a voltage value of a load and a target voltage value acquired via a serial interface and outputs an error amp signal therefrom. Each of the PWM-equipped drive units drives each inductor by a peak current control system using the clock signal and the error amp signal.
摘要翻译：可以实现多相电源装置的小型化。电源控制单元，其中例如在单个芯片上形成微控制器单元，存储单元和模拟控制器单元，多个配备PWM的驱动单元和多个电感器构成多相电源。微控制器单元输出每个具有基于存储器单元上的程序定义的频率和相位到相应的配备有PWM的驱动单元的时钟信号。模拟控制器单元检测负载的电压值与通过串行接口获取的目标电压值之间的差值，并输出误差放大器信号。每个配备PWM的驱动单元通过使用时钟信号和误差放大器信号的峰值电流控制系统驱动每个电感器。

48. 发明授权

US08519687B2 Semiconductor device and power source device with a current detection circuit 有权
标题翻译：具有电流检测电路的半导体装置和电源装置
公开(公告)号：US08519687B2
公开(公告)日：2013-08-27
申请号：US12911098
申请日：2010-10-25
申请人： Ryotaro Kudo
发明人： Ryotaro Kudo
IPC分类号： G05F1/00
CPC分类号： H02M3/1588 , H01L24/34 , H01L24/37 , H01L2224/37147 , H01L2224/37599 , H01L2224/48247 , H01L2224/73221 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/181 , H02M3/1584 , H02M2001/0032 , Y02B70/1466 , Y02B70/16 , H01L2924/00012 , H01L2924/00014
摘要： A power source device capable of improving the power conversion efficiency at a light load independent of an input power source voltage is realized. For example, a clock signal is output from a common control unit to a PWM-mounted drive unit including a reverse-current detection circuit in addition to a peak current control method. This clock signal is selected by a mode setting signal from either of a clock signal with a constant frequency or a clock signal which is generated via a one-shot pulse generation circuit every time an output voltage at an output power source node decreases. When the latter is selected, the switching frequency at a light load decreases and the power conversion efficiency improves. Furthermore, the peak current control method can reduce the input power source voltage dependence of the switching frequency.
摘要翻译：实现了能够在轻负载下独立于输入电源电压来提高功率转换效率的电源装置。例如，除了峰值电流控制方法之外，时钟信号从公共控制单元输出到包括反向电流检测电路的PWM安装的驱动单元。该时钟信号由来自具有恒定频率的时钟信号的模式设置信号或通过单输出脉冲发生电路每当输出电源节点的输出电压降低时产生的时钟信号选择。当选择后者时，轻负载时的开关频率降低，并且电力转换效率提高。此外，峰值电流控制方法可以降低开关频率的输入电源电压依赖性。

49. 发明授权

US08373484B2 Voltage clamp circuit, a switching power supply device, a semiconductor integrated circuit device, and a voltage level conversion circuit 有权
标题翻译：电压钳位电路，开关电源装置，半导体集成电路装置和电压电平转换电路
公开(公告)号：US08373484B2
公开(公告)日：2013-02-12
申请号：US13019833
申请日：2011-02-02
申请人： Ryotaro Kudo , Koji Tateno
发明人： Ryotaro Kudo , Koji Tateno
IPC分类号： H03L5/00 , H03K5/08
CPC分类号： H03K5/08 , H02M7/538
摘要： The present invention provides a voltage clamping circuit which is operated in a stable manner with the simple constitution and a switching power source device which enables a high-speed operation. In a switching power source device, one of source/drain routes is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current which is made to flow in an inductor such that the output voltage assumes a predetermined voltage and a second switching element which clamps an reverse electromotive voltage generated in the inductor when the first switching element is turned off to a predetermined potential. In such a switching power source device, the voltage clamping circuit is used in a feedback route for setting a dead time.
摘要翻译：本发明提供一种以简单结构稳定运行的电压钳位电路和能够进行高速运行的开关电源装置。在开关电源装置中，源/漏路径中的一个连接到输入电压被提供给的输入端，要限制的预定电压被提供给栅极，并且使用在另一个之间提供电流源的MOSFET 源/漏路径和电路的接地电位，从另一个源/漏路径获得对应于输入电压的钳位输出电压。开关电源装置还包括第一开关元件，其控制使得在电感器中流动的电流，使得输出电压呈现预定电压;以及第二开关元件，其在第一开关元件中钳位在电感器中产生的反向电动势电压开关元件被切断到预定电位。在这种开关电源装置中，钳位电路用于设置死区时间的反馈路径。

50. 发明申请

US20130001792A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130001792A1
公开(公告)日：2013-01-03
申请号：US13531567
申请日：2012-06-24
申请人： Tomoaki UNO , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa , Katsuhiko Funatsu
发明人： Tomoaki UNO , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa , Katsuhiko Funatsu
IPC分类号： H01L23/48
CPC分类号： H01L23/49575 , H01L23/3107 , H01L23/4824 , H01L23/49524 , H01L23/49562 , H01L24/37 , H01L24/40 , H01L24/73 , H01L2224/05554 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H02M3/1588 , H02M2001/0009 , Y02B70/1466 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A power MOSFET for switching and a sense MOSFET having an area smaller than that of the power MOSFET and configured to detect an electric current flowing through the power MOSFET are formed within one semiconductor chip CPH and the semiconductor chip CPH is mounted over a chip mounting part via an electrically conductive joining material and sealed with a resin. In a main surface of the semiconductor chip CPH, a sense MOSFET region in which the sense MOSFET is formed is located more internally than a source pad PDHS4 of the sense MOSFET region RG2. Furthermore, in the main surface of the semiconductor chip, the sense MOSFET region RG2 is surrounded by a region in which the power MOSFET is formed.
摘要翻译：用于开关的功率MOSFET和具有小于功率MOSFET的面积并且被配置为检测流过功率MOSFET的电流的感测MOSFET形成在一个半导体芯片CPH内，并且半导体芯片CPH安装在芯片安装部分通过导电接合材料并用树脂密封。在半导体芯片CPH的主表面中，形成感测MOSFET的感测MOSFET区域位于读出MOSFET区域RG2的源极焊盘PDHS4的内部。此外，在半导体芯片的主表面中，感测MOSFET区域RG2由形成功率MOSFET的区域包围。

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