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41. 发明申请

US20080176152A1 Mask Patterns for Semiconductor Device Fabrication and Related Methods and Structures 失效
标题翻译：半导体器件制造的掩模图案及相关方法和结构
公开(公告)号：US20080176152A1
公开(公告)日：2008-07-24
申请号：US12042625
申请日：2008-03-05
申请人： Jung-hwan Hah , Hyun-Woo Kim , Mitsuhiro Hata , Sang-gyun Woo
发明人： Jung-hwan Hah , Hyun-Woo Kim , Mitsuhiro Hata , Sang-gyun Woo
IPC分类号： G03C3/00
CPC分类号： H01L21/0274 , G03F7/405 , H01L21/0273 , H01L21/31144
摘要： Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.
摘要翻译：形成集成电路器件的方法可以包括在集成电路器件的层上形成抗蚀剂图案，其中该层的部分通过抗蚀剂图案的开口露出。可以在抗蚀剂图案上形成有机 - 无机杂化硅氧烷网膜。然后可以去除通过抗蚀剂图案暴露的层的部分和有机 - 无机杂化硅氧烷网膜。还讨论了相关结构。

42. 发明申请

US20070128823A1 Method of fabricating semiconductor integrated circuit device 审中-公开
标题翻译：制造半导体集成电路器件的方法
公开(公告)号：US20070128823A1
公开(公告)日：2007-06-07
申请号：US11634142
申请日：2006-12-06
申请人： Ji-young Lee , Sang-gyun Woo
发明人： Ji-young Lee , Sang-gyun Woo
IPC分类号： H01L21/20
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/3086 , H01L21/32139
摘要： A method of fabricating a semiconductor integrated circuit device is disclosed. The method may include forming an etching target layer on a semiconductor substrate, forming a sacrificial mold layer on the etching target layer, forming a photoresist pattern of a first image on the sacrificial mold layer, patterning the sacrificial mold layer using the photoresist pattern of the first image as an etching mask to form sacrificial molds, removing the photoresist pattern of the first image, forming a mask which fills portions between the sacrificial molds and may be an inverse image of the first image and etching the sacrificial molds and the etching target layer using the mask as the etching mask.
摘要翻译：公开了制造半导体集成电路器件的方法。该方法可以包括在半导体衬底上形成蚀刻目标层，在蚀刻目标层上形成牺牲模层，在牺牲模层上形成第一图像的光刻胶图案，使用第一图像作为蚀刻掩模以形成牺牲模具，去除第一图像的光致抗蚀剂图案，形成填充牺牲模具之间的部分的掩模，并且可以是第一图像的反像，并蚀刻牺牲模具和蚀刻目标层使用掩模作为蚀刻掩模。

43. 发明申请

US20070002293A1 Method measuring distortion using exposure equipment 审中-公开
标题翻译：使用曝光设备测量变形的方法
公开(公告)号：US20070002293A1
公开(公告)日：2007-01-04
申请号：US11475909
申请日：2006-06-28
申请人： Dong-woon Park , Sang-gyun Woo
发明人： Dong-woon Park , Sang-gyun Woo
IPC分类号： G03B27/68
CPC分类号： G03F7/706
摘要： A method of measuring distortion for an exposure apparatus is disclosed and comprises; aligning a reticle comprising a plurality of measuring patterns over a first wafer, wherein the plurality of measuring patterns are separated by a first pitch in a first direction and a second pitch in a second direction orthogonal to the first direction, forming a plurality of first exposure patterns on the first wafer by performing a first exposure process through the reticle, shifting the reticle by a first distance from a position at which the first exposure process was performed and aligning the reticle over the first wafer, forming a plurality of second exposure patterns on the first wafer by performing a second exposure process through the reticle, aligning the reticle over a second wafer, forming a plurality of third exposure patterns on the second wafer by performing a third exposure process though the reticle, shifting the reticle by a second distance from a position where the third exposure process was performed and aligning the reticle over the second wafer, forming a plurality of fourth exposure patterns on the second wafer by performing a fourth exposure process through the reticle, calculating a first relative error between the first exposure patterns and the second exposure patterns in the first direction, and calculating a second relative error between the third exposure patterns and the fourth exposure patterns in the second direction, and measuring distortion for the exposure apparatus in the first direction using the first relative error and measuring distortion for the exposure apparatus in the second direction using the second relative error.
摘要翻译：公开了一种测量曝光装置的变形的方法，包括：将包括多个测量图案的掩模版对准在第一晶片上，其中所述多个测量图案在与第一方向正交的第一方向上以第一间距分隔第二间距，并且在与第一方向正交的第二方向上分隔第二间距，形成多个第一曝光通过进行通过掩模版的第一曝光处理在第一晶片上的图案，将掩模版从执行第一曝光处理的位置移开第一距离，并将掩模版对准在第一晶片上，形成多个第二曝光图案所述第一晶片通过所述掩模版执行第二曝光处理，使所述掩模版对准在第二晶片上，通过所述掩模版执行第三曝光处理，在所述第二晶片上形成多个第三曝光图案，执行第三曝光处理并将掩模版对准在第二晶片上的位置，形成一个平原通过通过掩模版执行第四曝光处理，计算第一曝光图案和第一曝光图案之间的第一相对误差，并计算第三曝光图案之间的第二相对误差以及第二方向上的第四曝光图案，并且使用第一相对误差测量曝光装置在第一方向上的变形，并且使用第二相对误差来测量曝光装置在第二方向上的变形。

44. 发明申请

US20060234166A1 Method of forming pattern using fine pitch hard mask 有权
公开(公告)号：US20060234166A1
公开(公告)日：2006-10-19
申请号：US11367437
申请日：2006-03-06
申请人： Ji-young Lee , Sang-gyun Woo , Joon-soo Park
发明人： Ji-young Lee , Sang-gyun Woo , Joon-soo Park
IPC分类号： G03F7/26
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/0338
摘要： A method of forming a fine pattern of a semiconductor device using a fine pitch hard mask is provided. A first hard mask pattern including first line patterns formed on an etch target layer of a substrate with a first pitch is formed. A first layer including a top surface where a recess is formed between adjacent first line patterns is formed. A second hard mask pattern including second line patterns within the recess is formed. An anisotropic etching process is performed on the first layer using the first and the second line patterns as an etch mask. Another anisotropic etching process is performed on the etch target layer using the first and the second hard mask patterns as an etch mask.

45. 发明申请

US20060231900A1 Semiconductor device having fine contacts and method of fabricating the same 有权
标题翻译：具有微细接触的半导体器件及其制造方法
公开(公告)号：US20060231900A1
公开(公告)日：2006-10-19
申请号：US11367436
申请日：2006-03-06
申请人： Ji-young Lee , Hyun-jae Kang , Sang-gyun Woo
发明人： Ji-young Lee , Hyun-jae Kang , Sang-gyun Woo
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76816 , H01L21/76897
摘要： A semiconductor device has a structure of contacts whose size and pitch are finer that those that can be produced under the resolution provided by conventional photolithography. The contact structure includes a semiconductor substrate, an interlayer insulating layer disposed on the substrate, annular spacers situated in the interlayer insulating layer, first contacts surrounded by the spacers, and a second contact buried in the interlayer insulating layer between each adjacent pair of the first spacers. The contact structure is formed by forming first contact holes in the interlayer insulating layer, forming the spacers over the sides of the first contact holes to leave second contact holes within the first contact holes, etching the interlayer insulating layer from between the spacers using the first spacers as an etch mask to form third contact holes, and filling the first and second contact holes with conductive material. In this way, the pitch of the contacts can be half that of the first contact holes.
摘要翻译：半导体器件具有接触的结构，其尺寸和间距比通过常规光刻提供的分辨率可以产生的那些更小。所述接触结构包括半导体衬底，设置在所述衬底上的层间绝缘层，位于所述层间绝缘层中的环形间隔物，被所述间隔物包围的第一接触部以及埋在所述层间绝缘层中的每个相邻的所述第一接触层间隔物接触结构通过在层间绝缘层中形成第一接触孔而形成，在第一接触孔的侧面上形成间隔物以在第一接触孔内留下第二接触孔，使用第一接触孔从间隔物之间蚀刻层间绝缘层间隔物作为蚀刻掩模以形成第三接触孔，并且用导电材料填充第一和第二接触孔。以这种方式，触点的间距可以是第一接触孔的间距的一半。

46. 发明授权

US07045267B2 Resist composition comprising photosensitive polymer having lactone in its backbone 有权
标题翻译：抗蚀剂组合物包含其主链中具有内酯的光敏聚合物
公开(公告)号：US07045267B2
公开(公告)日：2006-05-16
申请号：US10349917
申请日：2003-01-24
申请人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
发明人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
IPC分类号： G03F7/038 , C07D307/00
CPC分类号： G03F7/0395 , G03F7/0392 , G03F7/0397 , Y10S430/106
摘要： This invention is directed to a coating composition used for original equipment manufacturing or refinishing uses in the automotive industry, which coating composition utilizes an acrylic polymer which contains substituted or unsubstituted exomethylene lactones or lactams as a comonomer.
摘要翻译：本发明涉及用于汽车工业的原始设备制造或修补用途的涂料组合物，该涂料组合物使用含有取代或未取代的异亚丙基内酯或内酰胺作为共聚单体的丙烯酸类聚合物。

47. 发明申请

US20060063077A1 Mask patterns including gel layers for semiconductor device fabrication and methods of forming the same 审中-公开
标题翻译：掩模图案包括用于半导体器件制造的凝胶层及其形成方法
公开(公告)号：US20060063077A1
公开(公告)日：2006-03-23
申请号：US11233406
申请日：2005-09-22
申请人： Mitsuhiro Hata , Hyun-woo Kim , Jung-hwan Hah , Sang-gyun Woo
发明人： Mitsuhiro Hata , Hyun-woo Kim , Jung-hwan Hah , Sang-gyun Woo
IPC分类号： G03C5/00 , G03C1/494 , G03C1/492 , G03C1/76 , G03F1/00
CPC分类号： G03F7/40 , G03F7/023 , G03F7/0382 , G03F7/0392
摘要： Mask patterns include a resist pattern and a gel layer on a surface of the resist pattern having a junction including hydrogen bonds between a proton donor polymer and a proton acceptor polymer. Methods of forming the mask patterns and methods of fabricating a semiconductor device using the mask patterns as etching masks are also provided.
摘要翻译：掩模图案包括抗蚀剂图案和抗蚀剂图案表面上的凝胶层，其具有包含质子供体聚合物和质子受体聚合物之间的氢键的连接点。还提供了形成掩模图案的方法和使用掩模图案制造半导体器件作为蚀刻掩模的方法。

48. 发明授权

US06964839B1 Photosensitive polymer having cyclic backbone and resist composition containing the same 失效
标题翻译：具有环状骨架的光敏性聚合物和含有它们的抗蚀剂组合物
公开(公告)号：US06964839B1
公开(公告)日：2005-11-15
申请号：US09715041
申请日：2000-11-20
申请人： Sang-jun Choi , Hyun-woo Kim , Sang-gyun Woo , Joo-tae Moon
发明人： Sang-jun Choi , Hyun-woo Kim , Sang-gyun Woo , Joo-tae Moon
IPC分类号： C08F220/18 , C08F222/06 , C08K5/00 , C08L33/06 , C08L35/00 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A photosensitive copolymer has a weight-average molecular weight of 3,000 to 100,000 and is represented by the following formula: wherein R1 is a hydrogen atom or methyl, R2 is an acid-labile tertiary alkyl group, and m/(m+n) is 0.5 to 0.8.
摘要翻译：光敏共聚物的重均分子量为3,000〜100,000，由下式表示：其中R 1是氢原子或甲基，R 2是酸不稳定叔烷基，m /（m + n）为0.5〜0.8。

49. 发明授权

US06835529B2 Polymer having butadiene sulfone repeating unit and resist composition comprising the same 失效
标题翻译：具有丁二烯砜重复单元和含有它们的抗蚀剂组合物的聚合物
公开(公告)号：US06835529B2
公开(公告)日：2004-12-28
申请号：US10384727
申请日：2003-03-11
申请人： Sang-jun Choi , Woo-sung Han , Sang-gyun Woo
发明人： Sang-jun Choi , Woo-sung Han , Sang-gyun Woo
IPC分类号： G03F7004
CPC分类号： G03F7/0397 , C08F234/04 , G03F7/0392 , G03F7/0395 , Y10S430/106 , Y10S430/111
摘要： A polymer having a repeating unit comprising a copolymer of butadiene sulfone and maleic anhydride, and a chemically amplified resist composition comprising the polymer. The resist composition includes a photosensitive polymer having a first repeating unit comprising a copolymer of butadiene sulfone and maleic anhydride, the first repeating unit represented by a formula: and a second repeating unit copolymerized with the first repeating unit.
摘要翻译：具有包含丁二烯砜和马来酸酐的共聚物的重复单元的聚合物和包含聚合物的化学放大抗蚀剂组合物。抗蚀剂组合物包括具有包含丁二烯砜和马来酸酐的共聚物的第一重复单元的光敏聚合物，由式表示的第一重复单元和与第一重复单元共聚的第二重复单元。

50. 发明授权

US06696217B2 Photosensitive monomer, photosensitive polymer and chemically amplified resist composition comprising lactone group having acid-labile protecting group 失效
标题翻译：光敏单体，光敏聚合物和含有酸不稳定保护基的内酯基团的化学增幅抗蚀剂组合物
公开(公告)号：US06696217B2
公开(公告)日：2004-02-24
申请号：US10077856
申请日：2002-02-20
申请人： Kwang-sub Yoon , Sang-gyun Woo
发明人： Kwang-sub Yoon , Sang-gyun Woo
IPC分类号： G03C173
CPC分类号： G03F7/0392 , G03F7/0395 , Y10S430/106 , Y10S430/108 , Y10S430/111 , Y10S430/115 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/126
摘要： A photosensitive monomer including a methylene butyrolactone derivative represented by the following formula: wherein R1 is a hydrogen atom or alkyl group, R2 is an acid-labile group, X is a hydrogen atom, or substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and Y is a substituted or unsubstitued alkyl group or alicyclic hydrocarbon group having 1 to 20 carbon atoms.
摘要翻译：一种包含下式表示的亚甲基丁内酯衍生物的感光性单体：其中R1是氢原子或烷基，R2是酸不稳定基团，X是氢原子或取代或未取代的碳原子数1〜10的烷基 Y为取代或未取代的碳原子数为1〜20的烷基或脂环族烃基。

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