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1. 发明授权

US08691693B2 Methods of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08691693B2
公开(公告)日：2014-04-08
申请号：US13290285
申请日：2011-11-07
申请人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Do-Hyoung Kim , Dong-Woon Park
发明人： Sang-Jin Kim , Jong-Chan Shin , Yong-Kug Bae , Do-Hyoung Kim , Dong-Woon Park
IPC分类号： H01L21/44 , H01L29/40
CPC分类号： H01L21/76895 , H01L21/28518 , H01L21/31144 , H01L21/76897 , H01L21/823418 , H01L21/823475 , H01L21/823481 , H01L29/66545 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： In a method of manufacturing a semiconductor device, a first etching mask and a second etching mask are formed sequentially on a metal gate structure on a substrate and a first insulating interlayer covering a sidewall of the metal gate structure respectively. An opening is formed to expose a top surface of the substrate by removing a portion of the first insulating interlayer not overlapped with the first etching mask or the second etching mask. A metal silicide pattern is formed on the exposed top surface of the substrate. A plug on the metal silicide pattern is formed to fill a remaining portion of the opening. Further, a planarization layer may be used as the second etching mask.
摘要翻译：在制造半导体器件的方法中，依次在基板上的金属栅极结构和覆盖金属栅极结构的侧壁的第一绝缘夹层上形成第一蚀刻掩模和第二蚀刻掩模。通过除去与第一蚀刻掩模或第二蚀刻掩模不重叠的第一绝缘夹层的一部分，形成开口以暴露基板的顶表面。在衬底的暴露的顶表面上形成金属硅化物图案。形成金属硅化物图案上的塞子以填充开口的剩余部分。此外，可以使用平坦化层作为第二蚀刻掩模。

2. 发明授权

US07954073B2 Methods of arranging mask patterns responsive to assist feature contribution to image intensity and associated apparatus 有权
标题翻译：响应于对图像强度的辅助特征贡献而布置掩模图案的方法和相关联的装置
公开(公告)号：US07954073B2
公开(公告)日：2011-05-31
申请号：US12164645
申请日：2008-06-30
申请人： Dong-woon Park
发明人： Dong-woon Park
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Methods and apparatus are disclosed that arrange mask patterns in response to the contribution of an assist feature to image intensity. In some methods of arranging mask patterns, a distribution of functions h(ξ−x) is obtained which represents the contribution of an assist feature to image intensity on a main feature. Neighboring regions of the main feature are discretized into finite regions, and the distribution of the functions h(ξ−x) is replaced with representative values h(x,ξ) of the discretized regions. A position of the assist feature is determined using polygonal regions having the same h(x,ξ). As described, the term x is the position of the main feature and the term ξ is the position of the assist.
摘要翻译：公开了响应于辅助特征对图像强度的贡献来布置掩模图案的方法和装置。在布置掩模图案的一些方法中，获得函数h（＆xgr; -x）的分布，其表示辅助特征对主要特征的图像强度的贡献。主要特征的相邻区域被离散为有限区域，并且函数h（＆xgr; -x）的分布被替换为离散区域的代表值h（x，＆xgr;）。使用具有相同h（x，xgr））的多边形区域来确定辅助特征的位置。如上所述，术语x是主要特征和术语＆xgr的位置; 是协助的位置。

3. 发明授权

US07877723B2 Method of arranging mask patterns and apparatus using the method 有权
标题翻译：使用该方法布置掩模图案和装置的方法
公开(公告)号：US07877723B2
公开(公告)日：2011-01-25
申请号：US11936610
申请日：2007-11-07
申请人： Dong-Woon Park
发明人： Dong-Woon Park
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Provided are a method of fabricating a semiconductor and an apparatus using the method, and more particularly, a method of effectively arranging assist features on the mask and an apparatus using the method. The method of arranging mask patterns includes separately calculating contributions of an assist feature to image intensity at an optimal focus and at a defocus position and placing the assist feature at a position where the contribution of the assist feature to the image intensity is greater at the defocus position than at the optimal focus position. The method includes a first operation of obtaining a first contribution function for contribution of an assist feature to image intensity at a main feature at a first focus position; a second operation of obtaining a second contribution function for contribution of the assist feature to the image intensity at the main feature at a second focus position; and a third operation of determining the position of the assist feature to be a position satisfying a condition that a linear combination of the first contribution function and the second contribution function exceeds a predetermined threshold value.
摘要翻译：提供一种制造半导体的方法和使用该方法的装置，更具体地，涉及一种在掩模上有效布置辅助特征的方法以及使用该方法的装置。布置掩模图案的方法包括分别计算辅助特征对最佳焦点和散焦位置处的图像强度的贡献，并将辅助特征放置在在散焦时辅助特征对图像强度的贡献大于图像强度的位置位置比最佳聚焦位置。该方法包括获得第一贡献函数的第一操作，用于辅助特征对第一聚焦位置处的主要特征处的图像强度的贡献; 获得辅助特征对第二聚焦位置处的主要特征处的图像强度的贡献的第二贡献函数的第二操作; 以及第三操作，其将所述辅助特征的位置确定为满足所述第一贡献函数和所述第二贡献函数的线性组合的条件的位置超过预定阈值。

4. 发明授权

US07937676B2 Method of arranging mask patterns and apparatus using the method 有权
标题翻译：使用该方法布置掩模图案和装置的方法
公开(公告)号：US07937676B2
公开(公告)日：2011-05-03
申请号：US11937317
申请日：2007-11-08
申请人： Dong-Woon Park
发明人： Dong-Woon Park
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： In positioning assist features on a photomask pattern to improve the image quality of the main features, the method includes deriving an h-function in a first process which represents a contribution of an assist feature with respect to image intensity at a main feature. In a continuation of the method, the position of the assist features are determined in a second process using the h-function derived in the first step. The assist features are then formed on the mask at the positions indicated. Also included is a computer readable medium having instructions for performing the h-function calculations, and the mask apparatus itself with both main and assist features positioned according to the h-function.
摘要翻译：在光掩模图案中的定位辅助特征中以提高主要特征的图像质量，该方法包括在表示辅助特征相对于主要特征的图像强度的贡献的第一过程中导出h函数。在该方法的继续中，使用在第一步骤中导出的h函数的第二过程来确定辅助特征的位置。然后在所指示的位置在掩模上形成辅助特征。还包括具有用于执行h功能计算的指令的计算机可读介质，以及具有根据h功能定位的主和辅助特征的掩模设备本身。

5. 发明申请

US20090013302A1 METHODS OF ARRANGING MASK PATTERNS RESPONSIVE TO ASSIST FEATURE CONTRIBUTION TO IMAGE INTENSITY AND ASSOCIATED APPARATUS 有权
标题翻译：方法对于帮助图像强度和相关设备的特征作出反应的面罩图案
公开(公告)号：US20090013302A1
公开(公告)日：2009-01-08
申请号：US12164645
申请日：2008-06-30
申请人： Dong-woon Park
发明人： Dong-woon Park
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Methods and apparatus are disclosed that arrange mask patterns in response to the contribution of an assist feature to image intensity. In some methods of arranging mask patterns, a distribution of functions h(ξ−x) is obtained which represents the contribution of an assist feature to image intensity on a main feature. Neighboring regions of the main feature are discretized into finite regions, and the distribution of the functions h(ξ−x) is replaced with representative values h(x,ξ) of the discretized regions. A position of the assist feature is determined using polygonal regions having the same h(x,ξ). As described, the term x is the position of the main feature and the term ξ is the position of the assist.
摘要翻译：公开了响应于辅助特征对图像强度的贡献来布置掩模图案的方法和装置。在布置掩模图案的一些方法中，获得函数h（xi-x）的分布，其表示辅助特征对主要特征对图像强度的贡献。将主要特征的相邻区域离散为有限区域，并将函数h（xi-x）的分布置换为离散化区域的代表性值（x，xi）。使用具有相同的多边形区域来确定辅助特征的位置（x，xi）。如上所述，术语x是主要特征的位置，术语xi是辅助的位置。

6. 发明授权

US07460210B2 Auto focus system, auto focus method, and exposure apparatus using the same 有权
标题翻译：自动对焦系统，自动对焦方式和使用其的曝光装置
公开(公告)号：US07460210B2
公开(公告)日：2008-12-02
申请号：US11269603
申请日：2005-11-09
申请人： Dong-Woon Park
发明人： Dong-Woon Park
IPC分类号： G03B27/42
CPC分类号： G03B27/52 , G03F9/7026 , G03F9/7088
摘要： An auto focus system includes a stage on which a substrate is mounted, light sources that irradiate the substrate with a plurality of focus beams directed towards the substrate at different angles, sensors that detect the focus beams reflected from the substrate, and a controller that determines the relative location of a surface of the substrate according to the locations at which the focus beams are detected by the sensors and positions the substrate accordingly. To this end, the controller performs calculations that are free from the influence of variations in the refractive index of the medium through which the focus beams propagate to the surface of the substrate. Therefore, the autofocus process is carried out with a high degree of precision.
摘要翻译：自动对焦系统包括其上安装有基板的阶段，以不同角度朝向基板指向的多个聚焦光束照射基板的光源，检测从基板反射的聚焦光束的传感器，以及确定根据由传感器检测聚焦光束的位置，相应地定位衬底，衬底表面的相对位置。为此，控制器执行不受聚焦光束传播到衬底表面的介质的折射率变化影响的计算。因此，以高精度进行自动聚焦处理。

7. 发明申请

US20080138720A1 METHOD OF ARRANGING MASK PATTERNS AND APPARATUS USING THE METHOD 有权
标题翻译：使用方法安装掩模图案和装置的方法
公开(公告)号：US20080138720A1
公开(公告)日：2008-06-12
申请号：US11937317
申请日：2007-11-08
申请人： Dong-Woon PARK
发明人： Dong-Woon PARK
IPC分类号： G03F1/00 , G06F17/50
CPC分类号： G03F1/36
摘要： In positioning assist features on a photomask pattern to improve the image quality of the main features, the method includes deriving an h-function in a first process which represents a contribution of an assist feature with respect to image intensity at a main feature. In a continuation of the method, the position of the assist features are determined in a second process using the h-function derived in the first step. The assist features are then formed on the mask at the positions indicated. Also included is a computer readable medium having instructions for performing the h-function calculations, and the mask apparatus itself with both main and assist features positioned according to the h-function.
摘要翻译：在光掩模图案中的定位辅助特征中以提高主要特征的图像质量，该方法包括在表示辅助特征相对于主要特征的图像强度的贡献的第一过程中导出h函数。在该方法的继续中，使用在第一步骤中导出的h函数的第二过程来确定辅助特征的位置。然后在所指示的位置在掩模上形成辅助特征。还包括具有用于执行h功能计算的指令的计算机可读介质，以及具有根据h功能定位的主和辅助特征的掩模设备本身。

8. 发明授权

US08871104B2 Method of forming pattern, reticle, and computer readable medium for storing program for forming pattern 有权
标题翻译：形成图案，掩模版和用于存储用于形成图案的程序的计算机可读介质的方法
公开(公告)号：US08871104B2
公开(公告)日：2014-10-28
申请号：US13221606
申请日：2011-08-30
申请人： Dong-woon Park , Hyun-jong Lee , Si-young Choi , Yong-kug Bae
发明人： Dong-woon Park , Hyun-jong Lee , Si-young Choi , Yong-kug Bae
IPC分类号： G06F17/50 , H01L21/027 , H01L21/033 , G03F1/70
CPC分类号： H01L21/0337 , G03F1/70 , G06F17/5081 , Y10S438/947
摘要： A method of forming a pattern includes forming a plurality of target patterns, forming a plurality of pitch violating patterns that make contact with the plurality of target patterns and are disposed between the plurality of target patterns, classifying the plurality of pitch violating patterns into a first region and a second region adjacent to the first region, and forming an initial pattern corresponding to one of the first region and the second region.
摘要翻译：形成图案的方法包括：形成多个目标图案，形成与多个目标图案接触并设置在多个目标图案之间的多个倾斜违规图案，将多个倾斜违规图案分类为第一区域和与第一区域相邻的第二区域，并且形成对应于第一区域和第二区域之一的初始图案。

9. 发明申请

US20110119644A1 METHODS OF ARRANGING MASK PATTERNS AND ASSOCIATED APPARATUS 有权
标题翻译：安装掩模和相关设备的方法
公开(公告)号：US20110119644A1
公开(公告)日：2011-05-19
申请号：US12968178
申请日：2010-12-14
申请人： Dong-woon Park , Woo-sung Han , Seong-woon Choi , Jeong-ho Yeo
发明人： Dong-woon Park , Woo-sung Han , Seong-woon Choi , Jeong-ho Yeo
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Methods and apparatus are disclosed that arrange mask patterns in response to the contribution of a second pattern to image intensity. In some methods of arranging mask patterns, a distribution of functions h(ξ−x) is obtained which represents the contribution of a second pattern to image intensity on a first pattern. Neighboring regions of the first pattern are discretized into finite regions, and the distribution of the functions h(ξ−x) is replaced with representative values h(x,ξ) of the discretized regions. A position of the second pattern is determined using polygonal regions having the same h(x,ξ). As described, the term x is the position of the first pattern and the term ξ is the position of the assist.
摘要翻译：公开了响应于第二图案对图像强度的贡献来布置掩模图案的方法和装置。在布置掩模图案的一些方法中，获得函数h（＆xgr; -x）的分布，其表示第二图案对第一图案上的图像强度的贡献。将第一模式的相邻区域离散为有限区域，并且用离散化区域的代表值h（x，xgr）替换函数h（＆xgr; -x）的分布。使用具有相同h（x，xgr））的多边形区域来确定第二图案的位置。如上所述，术语x是第一模式的位置和术语＆xgr; 是协助的位置。

10. 发明申请

US20070002293A1 Method measuring distortion using exposure equipment 审中-公开
标题翻译：使用曝光设备测量变形的方法
公开(公告)号：US20070002293A1
公开(公告)日：2007-01-04
申请号：US11475909
申请日：2006-06-28
申请人： Dong-woon Park , Sang-gyun Woo
发明人： Dong-woon Park , Sang-gyun Woo
IPC分类号： G03B27/68
CPC分类号： G03F7/706
摘要： A method of measuring distortion for an exposure apparatus is disclosed and comprises; aligning a reticle comprising a plurality of measuring patterns over a first wafer, wherein the plurality of measuring patterns are separated by a first pitch in a first direction and a second pitch in a second direction orthogonal to the first direction, forming a plurality of first exposure patterns on the first wafer by performing a first exposure process through the reticle, shifting the reticle by a first distance from a position at which the first exposure process was performed and aligning the reticle over the first wafer, forming a plurality of second exposure patterns on the first wafer by performing a second exposure process through the reticle, aligning the reticle over a second wafer, forming a plurality of third exposure patterns on the second wafer by performing a third exposure process though the reticle, shifting the reticle by a second distance from a position where the third exposure process was performed and aligning the reticle over the second wafer, forming a plurality of fourth exposure patterns on the second wafer by performing a fourth exposure process through the reticle, calculating a first relative error between the first exposure patterns and the second exposure patterns in the first direction, and calculating a second relative error between the third exposure patterns and the fourth exposure patterns in the second direction, and measuring distortion for the exposure apparatus in the first direction using the first relative error and measuring distortion for the exposure apparatus in the second direction using the second relative error.
摘要翻译：公开了一种测量曝光装置的变形的方法，包括：将包括多个测量图案的掩模版对准在第一晶片上，其中所述多个测量图案在与第一方向正交的第一方向上以第一间距分隔第二间距，并且在与第一方向正交的第二方向上分隔第二间距，形成多个第一曝光通过进行通过掩模版的第一曝光处理在第一晶片上的图案，将掩模版从执行第一曝光处理的位置移开第一距离，并将掩模版对准在第一晶片上，形成多个第二曝光图案所述第一晶片通过所述掩模版执行第二曝光处理，使所述掩模版对准在第二晶片上，通过所述掩模版执行第三曝光处理，在所述第二晶片上形成多个第三曝光图案，执行第三曝光处理并将掩模版对准在第二晶片上的位置，形成一个平原通过通过掩模版执行第四曝光处理，计算第一曝光图案和第一曝光图案之间的第一相对误差，并计算第三曝光图案之间的第二相对误差以及第二方向上的第四曝光图案，并且使用第一相对误差测量曝光装置在第一方向上的变形，并且使用第二相对误差来测量曝光装置在第二方向上的变形。

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