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41. 发明授权

US06879041B2 Semiconductor device with joint structure having lead-free solder layer over nickel layer 有权
标题翻译：具有接合结构的半导体器件，其具有在镍层上的无铅焊料层
公开(公告)号：US06879041B2
公开(公告)日：2005-04-12
申请号：US10396326
申请日：2003-03-26
申请人： Kenichi Yamamoto , Toshiaki Morita , Munehiro Yamada , Ryosuke Kimoto
发明人： Kenichi Yamamoto , Toshiaki Morita , Munehiro Yamada , Ryosuke Kimoto
IPC分类号： H01L23/12 , H01L21/60 , H01L23/485 , H01L23/498 , H05K3/24 , H05K3/34 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/10 , H01L23/49816 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05027 , H01L2224/05568 , H01L2224/05569 , H01L2224/05572 , H01L2224/05573 , H01L2224/13 , H01L2224/13099 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/48095 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73265 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01055 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/013 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H05K3/244 , H05K3/3463 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/05541 , H01L2224/05005
摘要： The impact strength resistance of a solder joint portion of a semiconductor device is improved. The semiconductor device has a joint structure wherein a jointing layer which does not contain sulfur substantially is arranged between an underlying conductive layer and a lead-free solder layer and further between the jointing layer and the lead-free solder layer is formed an alloy layer comprising elements of these layers.
摘要翻译：半导体器件的焊接部的耐冲击强度提高。半导体器件具有接合结构，其中基本上不含硫的接合层布置在下面的导电层和无铅焊料层之间，并且在接合层和无铅焊料层之间形成合金层，其包括这些层的元素。

42. 发明授权

US06784554B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06784554B2
公开(公告)日：2004-08-31
申请号：US10321567
申请日：2002-12-18
申请人： Ryoichi Kajiwara , Masahiro Koizumi , Masayoshi Shinoda , Akihiko Narisawa , Asao Nishimura , Toshiaki Morita , Kazuya Takahashi , Kazutoshi Itou
发明人： Ryoichi Kajiwara , Masahiro Koizumi , Masayoshi Shinoda , Akihiko Narisawa , Asao Nishimura , Toshiaki Morita , Kazuya Takahashi , Kazutoshi Itou
IPC分类号： H01L2348
CPC分类号： H01L24/16 , H01L24/02 , H01L24/13 , H01L24/81 , H01L2224/0401 , H01L2224/1134 , H01L2224/13099 , H01L2224/13144 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/73204 , H01L2224/81191 , H01L2224/81385 , H01L2224/81801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01021 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01052 , H01L2924/01065 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/15787 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H05K3/244 , H05K3/4602 , H01L2924/00
摘要： In a semiconductor device in which an LSI chip comprising electrodes with a 100 &mgr;m pitch or less and 50 or more pins is mounted directly on an organic substrate, a mounting structure and a manufacturing method thereof are provided excellent in the solder resistant reflow property, temperature cycle reliability and high temperature/high humidity reliability of the semiconductor device. Electrode Au bumps of the chip and an Au film at the uppermost surface of connection terminals of the substrate are directly flip-chip bonded by Au/Au metal bonding and the elongation of the bonded portion of the Au bump is 2 &mgr;m or more. The method of obtaining the bonded structure involves a process of supersonically bonding both of the bonding surfaces within 10 min after sputter cleaning, under the bonding conditions selected from room temperature on the side of the substrate, room temperature to 150° C. on the side of the chip, a bonding load of ½S×100 MPa to S×180 MPa (S: contact area between bump and chip), a loading mode increasing during bonding, and supersonic application time of 50 to 500 ms.
摘要翻译：在其中包括具有100mum间距的电极和50个或更多个引脚的电极的LSI芯片直接安装在有机基板上的半导体器件中，提供了优良的耐焊接回流性能，温度半导体器件的循环可靠性和高温/高湿度可靠性。电极在基板的连接端子的最上表面处的芯片的Au凸块和Au膜通过Au / Au金属接合直接倒装芯片接合，并且Au凸块的接合部分的伸长率为2μm以上。获得接合结构的方法包括在溅射清洗后10分钟内在选自室温一侧的接合条件下在室温至室温至150℃之间的接合条件下将两个接合表面进行超声波接合的方法芯片的接合负载为1/2S×100MPa至Sx180MPa（S：凸点与芯片之间的接触面积），接合期间的负载模式增加，超音速施加时间为50〜500ms。

43. 发明授权

US06609396B2 Weft knitting machine with transferring mechanism and transferring method 失效
标题翻译：纬编机具有转印机构和转印方式
公开(公告)号：US06609396B2
公开(公告)日：2003-08-26
申请号：US10239020
申请日：2002-09-18
申请人： Toshiaki Morita , Takekazu Shibuta
发明人： Toshiaki Morita , Takekazu Shibuta
IPC分类号： D04B700
CPC分类号： D04B15/02 , D04B7/28 , D04B15/365 , D04B15/78
摘要： A flat knitting machine comprising a transfer jack bed (9) holding transfer jacks (7) in such a manner as to freely advance and retract, wherein when a loop is transferred from the transfer jack (7) to the needle (19), the loop retaining portion (53) of the transfer jack (7) put in its advanced position is moved down to its lowered position, first; then, a back side (39b) of a needle hook of the needle (19) is made to go into the loop (111) retained on the loop retaining portion (53) of the transfer jack (7); then the loop retaining portion (53) is raised up to its raised position; and thereafter, a front side (39a) of the needle hook of the needle is made to go into the loop, whereby the transfer of loop can be ensured with a reduced burden on the loop in the transfer of loop through the use of a common track for the needles of the front bed (13a) and for the needles of the back bed (13b).
摘要翻译：一种横机，包括以可自由前进和后退的方式保持传送千斤顶（7）的传送千斤顶床（9），其中当环从传送千斤顶（7）传送到针（19）时，首先将放置在其前进位置的输送千斤顶（7）的回路保持部分（53）向下移动到其降低位置; 然后，将针（19）的针钩的后侧（39b）进入保持在转接插座（7）的环保持部（53）上的环（111）中。那么回路保持部分53被升高到其升高位置; 然后使针的针钩的前侧（39a）进入环路，由此可以通过使用共同的方式减小环路传递中环路的负担，从而确保环路的传送轨道用于前床（13a）和后床（13b）的针的针。

44. 发明授权

US06579623B2 Composite material member for semiconductor device and insulated and non-insulated semiconductor devices using composite material member 失效
公开(公告)号：US06579623B2
公开(公告)日：2003-06-17
申请号：US10083158
申请日：2002-02-27
申请人： Yasutoshi Kurihara , Yasuo Kondo , Takumi Ueno , Toshiaki Morita , Kenji Koyama , Takashi Suzumura , Kazuhiko Nakagawa , Kunihiro Fukuda
发明人： Yasutoshi Kurihara , Yasuo Kondo , Takumi Ueno , Toshiaki Morita , Kenji Koyama , Takashi Suzumura , Kazuhiko Nakagawa , Kunihiro Fukuda
IPC分类号： H04L21302
CPC分类号： H01L23/142 , H01L23/3736 , H01L24/73 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/49109 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2924/01327 , H01L2924/09701 , H01L2924/10253 , H01L2924/1301 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/15322 , H01L2924/16195 , H01L2924/181 , H01L2924/19107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H05K1/05 , Y10T428/12083 , Y10T428/12535 , Y10T428/12611 , Y10T428/12889 , Y10T428/12903 , Y10T428/1291 , Y10T428/25 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： To provide a composite material member for semiconductor device, an insulated semiconductor device and non-insulated semiconductor device using the composite material member, which are effective for obtaining a semiconductor device that alleviates thermal stress or thermal strain occurring during production or operation, has no possibilities of deformation, degeneration and rupture of each member, and is highly reliably and inexpensive. The composite material member for semiconductor device is characterized by being a composite metal plate with particles composed of cuprous oxide dispersed in a copper matrix, in which a surface of the composite metal plate is covered with a metal layer, and a copper layer with thickness of 0.5 &mgr;m or larger exists in an interface formed by the composite metal plate and the metal layer.

45. 发明授权

US6094946A Needle bed cleaner for a flat knitting machine 失效
标题翻译：针织机针床清洁剂
公开(公告)号：US6094946A
公开(公告)日：2000-08-01
申请号：US241734
申请日：1999-02-02
申请人： Toshiaki Morita , Kenji Ikoma
发明人： Toshiaki Morita , Kenji Ikoma
IPC分类号： D04B35/32 , D04B37/00
CPC分类号： D04B35/32
摘要： A flat knitting machine has a blower that is connected to a nozzle via a plastic tube, a base duct and a joint. The base duct is mounted on a rear cover of the flat knitting machine parallel to a needle bed and is rectangular in section. A long slit covered by a belt is provided on top of the base duct. The joint has three rollers, two of which make the belt contact the slit. The third roller peels the belt from the slit to connect the nozzle and the base duct. When the nozzle is connected to the carriage and travels over the needle beds, the needle beds are cleaned.
摘要翻译：横编机具有通过塑料管，基管和接头连接到喷嘴的鼓风机。底座管平行于针床安装在平针织机的后盖上，并且具有矩形截面。在基部管道的顶部设有由带子覆盖的长缝。接头具有三个辊，其中两个使皮带接触狭缝。第三个辊从缝隙中剥离皮带，以连接喷嘴和基管。当喷嘴连接到滑架并在针床上行进时，针床被清洁。

46. 发明授权

US5369715A Optical character recognition system 失效
标题翻译：光学字符识别系统
公开(公告)号：US5369715A
公开(公告)日：1994-11-29
申请号：US693247
申请日：1991-04-26
申请人： Hideaki Tanaka , Toshiaki Morita , Yoshihiro Kitamura
发明人： Hideaki Tanaka , Toshiaki Morita , Yoshihiro Kitamura
IPC分类号： G06K9/36 , G06K9/32 , G06K9/46 , G06K9/34
CPC分类号： G06K9/32 , G06K2209/01
摘要： A histogram is prepared using the heights of characters in an input alphanumeric character image data set. Based on this histogram, reference line characters are detected from the character row. The upper and lower extracting ordinates of each character in the character row are obtained. Then, the average of each of the upper and lower extracting ordinates in the character row is determined as the ordinate of a reference line for the character row. Thus obtained reference line is used for character recognition.
摘要翻译：使用输入字母数字字符图像数据集中的字符高度准备直方图。基于该直方图，从字符行检测参考线字符。获得字符行中每个字符的上下取出纵坐标。然后，将字符行中的上部和下部提取纵坐标的每个的平均值确定为字符行的参考线的纵坐标。这样获得的参考线用于字符识别。

47. 发明授权

US5093868A Method for determining lines of character images for use in an optical reader 失效
标题翻译：用于确定在光学读取器中使用的字符图像的线的方法
公开(公告)号：US5093868A
公开(公告)日：1992-03-03
申请号：US510874
申请日：1990-04-18
申请人： Hideaki Tanaka , Toshiaki Morita , Yoshihiro Kitamura , Yasuhisa Nakamura
发明人： Hideaki Tanaka , Toshiaki Morita , Yoshihiro Kitamura , Yasuhisa Nakamura
IPC分类号： G06K9/20 , G06K9/32
CPC分类号： G06K9/32 , G06K2209/01
摘要： A method for determining lines of character images in a recognition area for use in an optical character reader. In the line determining method, the character images in the recognition area are read by an image scanner so as to obtain image data of the character images in the recognition area. A circumscribed rectangular frame for enclosing each character is then determined based on the obtained image data so as to obtain coordinates of the circumscribed rectangular frame. Thereafter, circumscribed rectangular frames adjacent in a direction of the lines to each circumscribed rectangular frame are determined so as to obtain a connection relationship between the circumscribed rectangular frames as seen from each circumscribed rectangular frame, and then, the lines are determined based on the obtained connection relationship between the circumscribed rectangular frames.
摘要翻译：一种用于确定在光学字符读取器中使用的识别区域中的字符图像的线的方法。在行确定方法中，通过图像扫描器读取识别区域中的字符图像，以获得识别区域中的字符图像的图像数据。然后，基于所获得的图像数据确定用于封闭每个字符的外接矩形框架，以获得外接矩形框架的坐标。此后，确定每个外接矩形框架在与线条方向相邻的外接矩形框架，以便从每个外接矩形框架中获得外接矩形框架之间的连接关系，然后根据获得的线条确定线外接矩形框架之间的连接关系。

48. 发明授权

US08455986B2 Mosfet package 失效
标题翻译： Mosfet包装
公开(公告)号：US08455986B2
公开(公告)日：2013-06-04
申请号：US13459839
申请日：2012-04-30
申请人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
发明人： Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
IPC分类号： H01L23/495
CPC分类号： H01L23/49555 , H01L21/4814 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/495 , H01L23/4952 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/81 , H01L24/83 , H01L24/84 , H01L24/97 , H01L29/7833 , H01L2224/0401 , H01L2224/04026 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13139 , H01L2224/13144 , H01L2224/16245 , H01L2224/29011 , H01L2224/29015 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45139 , H01L2224/73253 , H01L2224/75251 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83101 , H01L2224/83138 , H01L2224/83191 , H01L2224/83825 , H01L2224/8385 , H01L2224/83851 , H01L2224/84801 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H05K3/3426 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/01049 , H01L2924/01083 , H01L2224/29139 , H01L2924/3512 , H01L2224/48 , H01L2924/00012
摘要： A semiconductor device featuring a semiconductor chip having a first main surface and a second, opposing main surface and including a MOSFET having source and gate electrodes formed on the first main surface and a drain electrode thereof formed on the second main surface, first and second conductive members acting as lead terminals for the source and gate electrodes, respectively, are disposed over the first main surface, each of the first and second conductive members has a part overlapped with the chip in a plan view, a sealing body sealing the chip and parts of the first and second conductive members such that a part of the first conductive member is projected outwardly from a first side surface of the sealing body and parts of the first and second conductive members are projected outwardly from the opposing second side surface of the sealing body in a plan view.
摘要翻译：一种具有半导体芯片的半导体器件，具有第一主表面和第二相对的主表面，并且包括形成在第一主表面上的源极和栅电极的MOSFET，以及形成在第二主表面上的漏电极，第一和第二导电作为源电极和栅电极的引线端子的部件分别设置在第一主表面上，第一和第二导电部件中的每一个在平面图中与芯片重叠，密封体密封芯片和部件的第一和第二导电构件，使得第一导电构件的一部分从密封体的第一侧表面向外突出，并且第一和第二导电构件的部分从密封体的相对的第二侧表面向外突出在平面图中。

49. 发明授权

US08400777B2 Electronic member, electronic part and manufacturing method therefor 失效
标题翻译：电子部件，电子部件及其制造方法
公开(公告)号：US08400777B2
公开(公告)日：2013-03-19
申请号：US12696590
申请日：2010-01-29
申请人： Eiichi Ide , Toshiaki Morita , Yusuke Yasuda
发明人： Eiichi Ide , Toshiaki Morita , Yusuke Yasuda
IPC分类号： H05K7/10
CPC分类号： H05K3/32 , C25D11/34 , H01L23/3142 , H01L23/481 , H01L23/49582 , H01L23/49811 , H01L23/49833 , H01L23/49866 , H01L23/50 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/50 , H01L24/73 , H01L24/81 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L33/62 , H01L2224/05001 , H01L2224/05009 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05568 , H01L2224/05639 , H01L2224/13025 , H01L2224/13099 , H01L2224/13109 , H01L2224/16145 , H01L2224/16225 , H01L2224/29111 , H01L2224/29139 , H01L2224/2919 , H01L2224/29339 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48105 , H01L2224/48177 , H01L2224/48227 , H01L2224/48247 , H01L2224/73204 , H01L2224/73265 , H01L2224/81009 , H01L2224/81193 , H01L2224/81201 , H01L2224/81395 , H01L2224/81486 , H01L2224/8184 , H01L2224/83801 , H01L2224/8384 , H01L2224/85205 , H01L2225/06513 , H01L2225/06541 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01016 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/12041 , H01L2924/12044 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/351 , H05K1/185 , H05K3/244 , H05K2201/10636 , H05K2201/10674 , H05K2203/0315 , H05K2203/1157 , H05K2203/121 , Y02P70/611 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2924/053 , H01L2224/83205
摘要： When silver oxide is reduced to silver, a large number of cores of metallic silver are formed inside the silver oxide. Then, the silver oxide is reduced in a manner of being hollowed out while its original outer configuration is being maintained. As a result, the curvature of the silver generated becomes larger. The utilization of this microscopic-particle implementation mechanism allows accomplishment of the bonding even if the silver oxide is supplied not in a particle-like configuration, but in a closely-packed layer-like configuration. In the present invention, there is provided an electronic member including an electrode for inputting/outputting an electrical signal, or a connection terminal for establishing a connection with the electrical signal, wherein the uppermost surface of the electrode or the connection terminal is a silver-oxide layer.
摘要翻译：当氧化银还原成银时，在氧化银内形成大量的金属银芯。然后，氧化银被以中空的方式被还原，同时保持原有的外部结构。结果，产生的银的曲率变大。利用这种微观粒子实施机制，即使氧化银不是颗粒状构造而是紧密堆叠的层状结构，也可实现粘结。在本发明中，提供了一种电子部件，其包括用于输入/输出电信号的电极或用于建立与电信号的连接的连接端子，其中电极或连接端子的最上表面是银 - 氧化层。

50. 发明申请

US20120104618A1 LOW TEMPERATURE BONDING MATERIAL AND BONDING METHOD 审中-公开
标题翻译：低温接合材料和粘接方法
公开(公告)号：US20120104618A1
公开(公告)日：2012-05-03
申请号：US13348072
申请日：2012-01-11
申请人： Yusuke Yasuda , Toshiaki Morita , Eiichi Ide , Hiroshi Hozoji , Toshiaki Ishii
发明人： Yusuke Yasuda , Toshiaki Morita , Eiichi Ide , Hiroshi Hozoji , Toshiaki Ishii
IPC分类号： H01L23/488
CPC分类号： H05K3/321 , B22F1/0014 , B22F1/0062 , B22F3/14 , B22F2003/145 , B23K35/22 , B23K35/3006 , B23K35/3013 , B23K35/302 , B23K35/40 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/83 , H01L25/072 , H01L2224/29007 , H01L2224/29101 , H01L2224/2919 , H01L2224/29311 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29355 , H01L2224/2936 , H01L2224/29364 , H01L2224/29366 , H01L2224/29369 , H01L2224/29371 , H01L2224/32225 , H01L2224/32245 , H01L2224/371 , H01L2224/37147 , H01L2224/3754 , H01L2224/40095 , H01L2224/40225 , H01L2224/45015 , H01L2224/45124 , H01L2224/48247 , H01L2224/49175 , H01L2224/73265 , H01L2224/83801 , H01L2224/8384 , H01L2224/84801 , H01L2224/85205 , H01L2224/8584 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01016 , H01L2924/01019 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/15153 , H01L2924/15165 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/2076 , H05K2201/0224 , H05K2201/0257 , H05K2201/0266 , Y10T428/12028 , Y10T428/12181 , Y10T428/2991 , Y10T428/8305 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2224/83205 , H01L2924/00012
摘要： A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 μm, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material.
摘要翻译：一种粘合材料，其包含涂覆有碳原子数为2〜8的有机物质的金属粒子，其中，所述金属粒子包含100nm以下的第一部分和大于100nm但不大于100μm的第二部分，基于体积基数具有至少峰值分布的部分。本公开还涉及使用接合材料的接合方法。

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