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41. 发明授权

US08772846B2 Magnetic tunneling junction devices, memories, memory systems, and electronic devices 有权
标题翻译：磁隧道结设备，存储器，存储器系统和电子设备
公开(公告)号：US08772846B2
公开(公告)日：2014-07-08
申请号：US13398640
申请日：2012-02-16
申请人： Jeong Heon Park , Woo Chang Lim , Sechung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
发明人： Jeong Heon Park , Woo Chang Lim , Sechung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
IPC分类号： H01L21/14
CPC分类号： H01L43/08 , G06F13/16 , G11C11/161 , G11C11/1659 , H01L43/02 , H01L43/10
摘要： Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
摘要翻译：本发明提供一种包括具有磁性层的第一结构的磁性隧道接合装置; 包括至少两个外在垂直磁化结构的第二结构，每个包括磁性层; 磁性层上的垂直磁化诱导层; 以及第一和第二结构之间的隧道屏障。

42. 发明授权

US09997699B2 Semiconductor device having magnetic tunnel junction structure and method of fabricating the same 有权
公开(公告)号：US09997699B2
公开(公告)日：2018-06-12
申请号：US15158575
申请日：2016-05-18
申请人： Juhyun Kim , Kiwoong Kim , Sechung Oh , Woochang Lim
发明人： Juhyun Kim , Kiwoong Kim , Sechung Oh , Woochang Lim
IPC分类号： H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： H01L43/12 , H01L43/08
摘要： A semiconductor device and a method of forming the semiconductor device are disclosed. The semiconductor device includes a lower electrode and a magnetic tunnel junction structure disposed on the lower electrode. The magnetic tunnel junction structure includes a seed pattern disposed on the lower electrode. The seed pattern includes an amorphous seed layer and an oxidized seed layer disposed on a surface of the amorphous seed layer. The seed pattern may prevent the lattice structure of the lower electrode from adversely affecting the lattice structure of a pinned magnetic layer of the magnetic tunnel junction structure.

43. 发明申请

US20180123025A1 MAGNETIC MEMORY DEVICE 审中-公开
公开(公告)号：US20180123025A1
公开(公告)日：2018-05-03
申请号：US15617012
申请日：2017-06-08
申请人： Sung Chul Lee , Ki Woong Kim , Sang Hwan Park , Sechung Oh
发明人： Sung Chul Lee , Ki Woong Kim , Sang Hwan Park , Sechung Oh
IPC分类号： H01L43/08 , H01L43/10 , H01L43/12 , H01F10/32 , H01F10/12
CPC分类号： H01L43/08 , H01F10/12 , H01F10/3204 , H01L43/10 , H01L43/12
摘要： A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern between the reference magnetic structure and the free magnetic structure. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first and the second pinned pattern. The second pinned pattern includes a first magnetic pattern adjacent the exchange coupling pattern, a second magnetic pattern adjacent the tunnel barrier pattern, a third magnetic pattern between the first and the second magnetic pattern, a first non-magnetic pattern between the first and the third magnetic pattern, and a second non-magnetic pattern between the second and the third magnetic pattern. The first non-magnetic pattern has a different crystal structure from the second non-magnetic pattern, and at least a portion of the third magnetic pattern is amorphous.

44. 发明授权

US09660187B1 Methods of forming a layer and methods of manufacturing magnetic memory devices using the same 有权
公开(公告)号：US09660187B1
公开(公告)日：2017-05-23
申请号：US15202250
申请日：2016-07-05
申请人： Yong Sung Park , Joonmyoung Lee , Ki Woong Kim , Juhyun Kim , Sechung Oh
发明人： Yong Sung Park , Joonmyoung Lee , Ki Woong Kim , Juhyun Kim , Sechung Oh
IPC分类号： H01L21/00 , H01L43/12 , H01L43/08
CPC分类号： H01L43/12 , C23C14/08 , C23C14/081 , C23C14/3464 , H01F41/307 , H01L43/08
摘要： A method of forming a layer includes providing a first insulator and a second insulator over a lower structure, generating a first ion source and a second ion source from the first insulator and the second insulator, respectively, and forming an insulating layer on the lower structure using the first ion source and the second ion source. The first and second insulators are vertically spaced apart from the lower structure and are laterally spaced apart from each other. The first insulator and the second insulator include the same material.

45. 发明授权

US09484529B2 Magnetic memory device 有权
公开(公告)号：US09484529B2
公开(公告)日：2016-11-01
申请号：US15098503
申请日：2016-04-14
申请人： Jangeum Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woochang Lim
发明人： Jangeum Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woochang Lim
IPC分类号： H01L27/22 , H01L43/10 , H01L43/08
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/02 , H01L43/08
摘要： A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

46. 发明授权

US09397286B2 Magnetic memory devices having perpendicular magnetic tunnel structures therein 有权
标题翻译：其中具有垂直磁隧道结构的磁存储器件
公开(公告)号：US09397286B2
公开(公告)日：2016-07-19
申请号：US14473334
申请日：2014-08-29
申请人： Sangyong Kim , Whankyun Kim , Sechung Oh
发明人： Sangyong Kim , Whankyun Kim , Sechung Oh
IPC分类号： H01L29/82 , H01L43/08 , H01L43/02
CPC分类号： H01L43/02 , G11C11/161 , H01L43/08
摘要： Magnetic memory cells include a magnetic tunnel junction and a first electrode, which is electrically coupled to the magnetic tunnel junction by a first conductive structure. This conductive structure includes a blocking layer and a seed layer, which extends between the blocking layer and the magnetic tunnel junction. The blocking layer is formed as an amorphous metal compound. In some of the embodiments, the blocking layer is a thermally treated layer and an amorphous state of the blocking layer is maintained during and post thermal treatment.
摘要翻译：磁存储器单元包括磁性隧道结和第一电极，其通过第一导电结构电耦合到磁性隧道结。该导电结构包括在阻挡层和磁性隧道结之间延伸的阻挡层和种子层。阻挡层形成为无定形金属化合物。在一些实施例中，阻挡层是热处理层，并且在热处理期间和之后保持阻挡层的无定形状态。

47. 发明授权

US08934288B2 Magnetic memory devices 有权
标题翻译：磁存储器件
公开(公告)号：US08934288B2
公开(公告)日：2015-01-13
申请号：US13404237
申请日：2012-02-24
申请人： Sechung Oh , Hyungrok Oh
发明人： Sechung Oh , Hyungrok Oh
IPC分类号： G11C11/00 , G11C11/16
CPC分类号： G11C11/161 , Y10S977/933 , Y10S977/935
摘要： Magnetic memory devices are provided, the devices include at least memory cell and a reference cell on a substrate. The memory cells include a first base magnetic layer, a free layer, and a first tunnel barrier layer between the first base magnetic layer and free layer. The reference memory cell includes a second base magnetic layer, a reference magnetic layer, and a second tunnel barrier layer between the second base magnetic layer and reference magnetic layer. The reference magnetic layer has a magnetic direction substantially perpendicular to that of the free layer.
摘要翻译：提供了磁存储器件，器件至少包括存储单元和衬底上的参考单元。存储单元包括第一基极磁性层，自由层和第一基极磁性层和自由层之间的第一隧道势垒层。参考存储单元包括第二基极磁性层，参考磁性层和第二基极磁性层与参考磁性层之间的第二隧道势垒层。参考磁性层具有基本上垂直于自由层的磁方向的磁方向。

48. 发明申请

US20130307102A1 Magnetic devices having perpendicular magnetic tunnel junction 有权
公开(公告)号：US20130307102A1
公开(公告)日：2013-11-21
申请号：US13987150
申请日：2013-07-02
申请人： Sechung Oh , Ki Woong Kim , Younghyun Kim , Whankyun Kim , Sang Hwan Park
发明人： Sechung Oh , Ki Woong Kim , Younghyun Kim , Whankyun Kim , Sang Hwan Park
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01L27/224 , H01L27/226 , H01L27/228 , H01L43/08 , H01L43/10
摘要： Provided are magnetic memory devices with a perpendicular magnetic tunnel junction. The device includes a magnetic tunnel junction including a free layer structure, a pinned layer structure, and a tunnel barrier therebetween. The pinned layer structure may include a first magnetic layer having an intrinsic perpendicular magnetization property, a second magnetic layer having an intrinsic in-plane magnetization property, and an exchange coupling layer interposed between the first and second magnetic layers. The exchange coupling layer may have a thickness maximizing an antiferromagnetic exchange coupling between the first and second magnetic layers, and the second magnetic layer may exhibit a perpendicular magnetization direction, due at least in part to the antiferromagnetic exchange coupling with the first magnetic layer.

49. 发明申请

US20120218813A1 Magnetic Memory Devices 有权
标题翻译：磁存储器件
公开(公告)号：US20120218813A1
公开(公告)日：2012-08-30
申请号：US13404237
申请日：2012-02-24
申请人： Sechung Oh , Hyungrok Oh
发明人： Sechung Oh , Hyungrok Oh
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , Y10S977/933 , Y10S977/935
摘要： Magnetic memory devices are provided, the devices include at least memory cell and a reference cell on a substrate. The memory cells include a first base magnetic layer, a free layer, and a first tunnel barrier layer between the first base magnetic layer and free layer. The reference memory cell includes a second base magnetic layer, a reference magnetic layer, and a second tunnel barrier layer between the second base magnetic layer and reference magnetic layer. The reference magnetic layer has a magnetic direction substantially perpendicular to that of the free layer.
摘要翻译：提供了磁存储器件，器件至少包括存储单元和衬底上的参考单元。存储单元包括第一基极磁性层，自由层和第一基极磁性层和自由层之间的第一隧道势垒层。参考存储单元包括第二基极磁性层，参考磁性层和第二基极磁性层与参考磁性层之间的第二隧道势垒层。参考磁性层具有基本上垂直于自由层的磁方向的磁方向。

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