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41. 发明授权

US06882509B2 GMR configuration with enhanced spin filtering 有权
标题翻译： GMR配置与增强的自旋过滤
公开(公告)号：US06882509B2
公开(公告)日：2005-04-19
申请号：US10791021
申请日：2004-03-02
申请人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng T. Horng , Kochan Ju , Simon Liao
发明人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng T. Horng , Kochan Ju , Simon Liao
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/00 , H01F10/06 , H01F10/12 , H01F10/14 , H01F10/16 , H01F10/18 , H01F10/30 , H01F10/32 , H01F41/30 , H01L43/08 , H01L43/12 , G11B5/33 , G11B5/127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3133 , G11B5/3903 , G11B5/3909 , H01F10/3272 , H01L43/08 , Y10T428/1121 , Y10T428/1129 , Y10T428/1157 , Y10T428/1171 , Y10T428/12944 , Y10T428/2495
摘要： Disclosed is a method of making a SVGMR sensor element. In the first embodiment a buffer layer is formed between a seed layer and a ferromagnetic (FM) free layer, the buffer layer being composed of alpha-Fe2O3 having a crystal lattice constant that is close to the FM free layer's crystal constant and has the same crystal structure. The metal oxide buffer layer enhances the specular scattering. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter-SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment include a pinned FM layer comprising a three layer structure of a lower AP layer, a space layer (e.g., Ru) and an upper AP layer.
摘要翻译：公开了一种制造SVGMR传感器元件的方法。在第一实施例中，在种子层和不含铁磁性（FM）的层之间形成缓冲层，该缓冲层由α-Fe 2 O 3 3 N 3 晶格常数接近于FM自由层的晶体常数，具有相同的晶体结构。金属氧化物缓冲层增强了镜面散射。在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-GVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。第三实施例包括包括下AP层的三层结构，空间层（例如Ru）和上AP层的钉扎FM层。

42. 发明授权

US06428719B1 Etching process to selectively remove copper plating seed layer 失效
标题翻译：蚀刻工艺选择性去除镀铜种子层
公开(公告)号：US06428719B1
公开(公告)日：2002-08-06
申请号：US09487454
申请日：2000-01-19
申请人： Xuehua Wu , Wensen Li , Si-Tuan Lam , Henry C. Chang , Kochan Ju , Jei-Wei Chang
发明人： Xuehua Wu , Wensen Li , Si-Tuan Lam , Henry C. Chang , Kochan Ju , Jei-Wei Chang
IPC分类号： C23F100
CPC分类号： F16B7/025 , C23F1/18 , G11B5/17 , G11B5/313 , G11B5/3163 , H05K1/056 , H05K3/067 , Y10T403/7069
摘要： Write head coils for magnetic disk systems are commonly formed through electroplating onto a seed layer in the presence of a photoresist mask. It is then necessary to remove the seed layer everywhere except under the coil itself. The present invention achieves this through etching in a solution of ammonium persulfate to which has been added the complexing agent 1,4,8,11 tetraazundecane. This suppresses the reduction of Cu++ to Cu, thereby increasing the dissolution rate of copper while decreasing that of nickel-iron. Two ways of implementing this are described—adding the complexing agent directly to the ammonium persulfate and introducing the 1,4,8,11 tetraazundecane through a dipping process that precedes conventional etching in the ammonium persulfate.
摘要翻译：用于磁盘系统的写头线圈通常在光致抗蚀剂掩模的存在下通过电镀到种子层上形成。因此，除了线圈本身以外，还需要除去种子层。本发明通过在已加入络合剂1,4,8,11四氮十烷的过硫酸铵溶液中进行蚀刻来实现。这抑制了Cu ++还原为Cu，从而提高了铜的溶解速度，同时降低了镍铁的溶解速度。描述了实现这一点的两种方法 - 将络合剂直接加入到过硫酸铵中，并通过在过硫酸铵中常规蚀刻之前的浸渍方法引入1,4,8,11四氮杂十一烷。

43. 发明授权

US06395458B2 Corrosion inhibitor of NiCu for high performance writers 失效
标题翻译： NiCu防腐剂用于高性能作者
公开(公告)号：US06395458B2
公开(公告)日：2002-05-28
申请号：US09756015
申请日：2001-01-08
申请人： Xuehua Wu , Yi-Chun Liu , Jei-Wei Chang , Kochan Ju
发明人： Xuehua Wu , Yi-Chun Liu , Jei-Wei Chang , Kochan Ju
IPC分类号： G03F732
CPC分类号： G03F7/322 , C23F1/02 , G11B5/3163 , H05K3/064
摘要： The problem of copper corrosion that occurs in the presence of strong alkaline developing solutions during photo rework has been overcome by protecting all exposed copper bearing surfaces from attack. Two ways of achieving this are described. In the first method, benzotriazole (BTA) is added to the developing solution which is then used in the normal way, developing time being unaffected by this modification. In the second method, the surface that is to receive the photoresist is first given a dip in a solution of BTA, following which the photoresist is immediately applied and processing, including proceeds as normal. For both methods the result is the elimination of all copper corrosion during development.
摘要翻译：通过保护所有暴露的铜轴承表面免受攻击，已经克服了在照相返修期间存在强碱性显影液存在的铜腐蚀问题。描述实现这一点的两种方式。在第一种方法中，将苯并三唑（BTA）加入显影液中，然后以正常方式使用，显影时间不受该改性的影响。在第二种方法中，首先将待接收光致抗蚀剂的表面浸入BTA溶液中，随后立即施加光刻胶并进行处理，包括正常进行。对于这两种方法，结果是在开发过程中消除了所有的铜腐蚀。

44. 发明授权

US06207350B1 Corrosion inhibitor for NiCu for high performance writers 失效
标题翻译： NiCu用于高性能作者的防腐蚀剂
公开(公告)号：US06207350B1
公开(公告)日：2001-03-27
申请号：US09483931
申请日：2000-01-18
申请人： Xuehua Wu , Yi-Chun Liu , Jei-Wei Chang , Kochan Ju
发明人： Xuehua Wu , Yi-Chun Liu , Jei-Wei Chang , Kochan Ju
IPC分类号： G03F732
CPC分类号： G03F7/322 , C23F1/02 , G11B5/3163 , H05K3/064
摘要： The problem of copper corrosion that occurs in the presence of strong alkaline developing solutions during photo rework has been overcome by protecting all exposed copper bearing surfaces from attack. Two ways of achieving this are described. In the first method, benzotriazole (BTA) is added to the developing solution which is then used in the normal way, developing time being unaffected by this modification. In the second method, the surface that is to receive the photoresist is first given a dip in a solution of BTA, following which the photoresist is immediately applied and processing, including development, proceeds as normal. For both methods the result is the elimination of all copper corrosion during development.
摘要翻译：通过保护所有暴露的铜轴承表面免受攻击，已经克服了在照相返修期间存在强碱性显影液存在的铜腐蚀问题。描述实现这一点的两种方式。在第一种方法中，将苯并三唑（BTA）加入显影液中，然后以正常方式使用，显影时间不受该改性的影响。在第二种方法中，首先将待接收光致抗蚀剂的表面浸入BTA的溶液中，随后立即施加光致抗蚀剂，并且包括显影在内的处理正常进行。对于这两种方法，结果是在开发过程中消除了所有的铜腐蚀。

45. 发明授权

US5684658A High track density dual stripe magnetoresistive (DSMR) head 失效
标题翻译：高轨道密度双条磁阻（DSMR）头
公开(公告)号：US5684658A
公开(公告)日：1997-11-04
申请号：US727264
申请日：1996-10-07
申请人： Xizeng Shi , Yimin Guo , Kochan Ju , Cherng-Chyi Han , Yimin Hsu , Jei-Wei Chang
发明人： Xizeng Shi , Yimin Guo , Kochan Ju , Cherng-Chyi Han , Yimin Hsu , Jei-Wei Chang
IPC分类号： G11B5/012 , G11B5/39 , G11B5/48
CPC分类号： G11B5/3954 , G11B5/012 , G11B5/3967 , G11B5/488
摘要： A method for forming a dual stripe magnetoresistive (DSMR) sensor element, and the dual stripe magnetoresistive (DSMR) sensor element formed through the method. To practice the method, there is formed upon a substrate a first magnetoresistive (MR) layer, where the first magnetoresistive (MR) layer has a first sensor region longitudinally magnetically biased in a first longitudinal bias direction through a patterned first longitudinal magnetic biasing layer. There is then formed a second magnetoresistive (MR) layer parallel with and separated from the first magnetoresistive (MR) layer by an insulator layer. The second magnetoresistive (MR) layer has a second sensor region longitudinally magnetically biased in a second longitudinal bias direction through a patterned second longitudinal magnetic biasing layer. The first longitudinal bias direction and the second longitudinal bias direction are substantially parallel. In addition, the first sensor region and the second sensor region are physically offset. Finally, the first magnetoresistive (MR) layer is electromagnetically biased with a first bias current in a first bias current direction and the second magnetoresistive (MR) layer is electromagnetically biased with a second bias current in a second bias current direction, where the first bias current direction and the second bias current direction are substantially parallel.
摘要翻译：一种用于形成双条磁阻（DSMR）传感器元件的方法和通过该方法形成的双条带磁阻（DSMR）传感器元件。为了实施该方法，在衬底上形成第一磁阻（MR）层，其中第一磁阻（MR）层具有通过图案化的第一纵向磁偏置层在第一纵向偏置方向上纵向磁偏置的第一传感器区。然后通过绝缘体层形成与第一磁阻（MR）层平行并与第一磁阻（MR）层分离的第二磁阻（MR）层。第二磁阻（MR）层具有通过图案化的第二纵向磁偏置层在第二纵向偏置方向上纵向磁偏置的第二传感器区。第一纵向偏置方向和第二纵向偏置方向基本平行。此外，第一传感器区域和第二传感器区域被物理偏移。最后，第一磁阻（MR）层在第一偏置电流方向上以第一偏置电流进行电磁偏置，第二磁阻（MR）层在第二偏置电流方向上以第二偏置电流进行电磁偏置，其中第一偏置电流方向和第二偏置电流方向基本上平行。

46. 发明申请

US20050099739A1 Narrow track CPP head with bias cancellation 失效
标题翻译：窄轨CPP头偏置消除
公开(公告)号：US20050099739A1
公开(公告)日：2005-05-12
申请号：US10706838
申请日：2003-11-12
申请人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
发明人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39 , H01F10/32 , H01L43/08 , H01L43/12
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： As track widths in magnetic read heads grow smaller, the spacing between the bias magnets grows less so their effect extends further and further into the free layer. This can be reduced by means of a bias cancellation layer but at the cost of increased edge sensitivity. This problem has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.
摘要翻译：随着磁读头中的磁道宽度越来越小，偏置磁体之间的间距越来越小，因此它们的作用进一步延伸进入自由层。这可以通过偏置消除层来降低，但是以增加的边缘灵敏度为代价。通过限制偏置消除层的宽度并添加额外的绝缘层，可以解决这个问题，以确保通过器件的电流仅流过其中心区域，从而最小化其边缘读取灵敏度。

47. 发明授权

US06767477B2 Etching process to selectively remove copper plating seed layer 有权
标题翻译：蚀刻工艺选择性去除镀铜种子层
公开(公告)号：US06767477B2
公开(公告)日：2004-07-27
申请号：US10170106
申请日：2002-06-12
申请人： Xue Hua Wu , Wensen Li , Si-Tuan Lam , Henry C. Chang , Kochan Ju , Jei-Wei Chang
发明人： Xue Hua Wu , Wensen Li , Si-Tuan Lam , Henry C. Chang , Kochan Ju , Jei-Wei Chang
IPC分类号： C23F100
CPC分类号： F16B7/025 , C23F1/18 , G11B5/17 , G11B5/313 , G11B5/3163 , H05K1/056 , H05K3/067 , Y10T403/7069
摘要： Write head coils for magnetic disk systems are commonly formed through electroplating onto a seed layer in the presence of a photoresist mask. It is then necessary to remove the seed layer everywhere except under the coil itself. The present invention achieves this through etching in a solution of ammonium persulfate to which has been added the complexing agent 1,4,8,11 tetraazundecane. This suppresses the reduction of Cu++ to Cu, thereby increasing the dissolution rate of copper while decreasing that of nickel-iron. Two ways of implementing this are described—adding the complexing agent directly to the ammonium persulfate and introducing the 1,4,8,11 tetraazundecane through a dipping process that precedes conventional etching in the ammonium persulfate.
摘要翻译：用于磁盘系统的写头线圈通常在光刻胶掩模的存在下通过电镀到种子层上形成。因此，除了线圈本身以外，还需要除去种子层。本发明通过在已加入络合剂1,4,8,11四氮十烷的过硫酸铵溶液中进行蚀刻来实现。这抑制了Cu向Cu的还原，从而提高了铜的溶解速率，同时降低了镍铁的溶解速率。描述了实现这一点的两种方法 - 将络合剂直接加入到过硫酸铵中，并通过在过硫酸铵中常规蚀刻之前的浸渍方法引入1,4,8,11四氮杂十一烷。

48. 发明授权

US06560864B1 Process for manufacturing a flat coil 失效
标题翻译：制造扁平线圈的工艺
公开(公告)号：US06560864B1
公开(公告)日：2003-05-13
申请号：US09992517
申请日：2001-11-14
申请人： Jei-Wei Chang , Kochan Ju
发明人： Jei-Wei Chang , Kochan Ju
IPC分类号： H05K302
CPC分类号： H05K3/108 , H01F17/0006 , H01F41/043 , H05K1/165 , H05K3/062 , H05K3/388 , H05K2203/0315 , H05K2203/0361 , H05K2203/095 , H05K2203/1142 , Y10T29/49032 , Y10T29/49069 , Y10T29/49071 , Y10T29/49073 , Y10T29/49155 , Y10T29/49156 , Y10T29/49165
摘要： A process for manufacturing a flat coil for use as the write head in a magnetic disk system is disclosed. The process starts with a blanket seed layer which is coated with a photoresist frame that defines the shape of the coil. The latter is then electroformed from the seed layer within the confines of said frame. Key features of the invention include capping the coil with a layer of gold to protect it during the removal of copper that is exposed after photoresist removal, using reactive ion etching to convert the exposed copper to the chloride (which is then easily rinsed away), and then removing all last traces of chlorides through an ashing process.
摘要翻译：公开了一种用于制造用作磁盘系统中的写入头的扁平线圈的工艺。该工艺以覆盖有限定线圈形状的光致抗蚀剂框架的覆盖种子层开始。然后将后者从所述框架的范围内的种子层电铸。本发明的主要特征包括用一层金覆盖线圈，以在去除在光致抗蚀剂去除之后暴露的铜的过程中保护它，使用反应离子蚀刻将暴露的铜转化为氯化物（然后容易地冲洗掉）然后通过灰化过程去除所有最后痕量的氯化物。

49. 发明授权

US06292336B1 Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient 失效
标题翻译：具有增强磁阻（MR）系数的巨磁阻（GMR）传感器元件
公开(公告)号：US06292336B1
公开(公告)日：2001-09-18
申请号：US09408703
申请日：1999-09-30
申请人： Cheng T. Horng , Ru-Ying Tong , Kochan Ju , Mao-Min Chen , Jei-Wei Chang , Simon H. Liao
发明人： Cheng T. Horng , Ru-Ying Tong , Kochan Ju , Mao-Min Chen , Jei-Wei Chang , Simon H. Liao
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/3268
摘要： A method for forming a giant magnetoresistive (GMR) sensor element, and a giant magnetoresistive (GMR) sensor element formed in accord with the method. In accord with the method, there is first provided a substrate. There is then formed over the substrate a seed layer formed of a magnetoresistive (MR) resistivity sensitivity enhancing material selected from the group consisting or nickel-chromium alloys and nickel-iron-chromium alloys. There is then formed over the seed layer a nickel oxide material layer. Finally, there is then formed over the nickel oxide material layer a free ferromagnetic layer separated from a pinned ferromagnetic layer in turn formed thereover by a non-magnetic conductor spacer layer, where the pinned ferromagnetic layer in turn has a pinning material layer formed thereover. The method contemplates a giant magnetoresistive (GMR) sensor element formed in accord with the method. The nickel oxide material layer provides the giant magnetoresistive (GMR) sensor element with an enhanced magnetoresistive (MR) resistivity sensitivity.
摘要翻译：一种用于形成巨磁阻（GMR）传感器元件的方法，以及根据该方法形成的巨磁阻（GMR）传感元件。根据该方法，首先提供基板。然后在衬底上形成由选自镍铬合金和镍 - 铁 - 铬合金的磁阻（MR）电阻率敏感度增强材料形成的晶种层。然后在种子层上形成氧化镍材料层。最后，然后在氧化镍材料层上形成与被钉扎的铁磁性层分离的自由铁磁层，然后由非磁性导体间隔层形成，其中钉扎的铁磁层又形成有钉扎材料层。该方法考虑了根据该方法形成的巨磁阻（GMR）传感器元件。氧化镍材料层提供具有增强的磁阻（MR）电阻率敏感性的巨磁阻（GMR）传感器元件。

50. 发明授权

US06274025B1 Chemical approach to develop lift-off photoresist structure and passivate MR sensor 失效
标题翻译：化学方法开发剥离光致抗蚀剂结构和钝化MR传感器
公开(公告)号：US06274025B1
公开(公告)日：2001-08-14
申请号：US09332433
申请日：1999-06-14
申请人： Jei-Wei Chang , Shou-Chen Kao , Cherng-Chyi Han , Kochan Ju , Mao-Min Chen
发明人： Jei-Wei Chang , Shou-Chen Kao , Cherng-Chyi Han , Kochan Ju , Mao-Min Chen
IPC分类号： C25D502
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3106 , G11B5/3163 , G11B5/3903 , G11B2005/3996
摘要： A method to form a passivation layer over a MR Sensor so that the passivation layer defines the track width. The passivation layer is formed simultaneously with the development of the lift off structure in a novel developing/oxidizing solution that oxidizes the MR sensor and develops the photoresist. The passivation layer is an electrical insulator that prevents sensor current from shunting through the overspray of the leads and a heat conductor to allow MR heat to dissipate through the overspray. The method comprises: spinning-on and printing a lift-off photoresist structure over the MR sensor. Next, the lift-off photoresist structure is developed. The MR sensor is anodized in a developing/oxidizing solution to: (1) remove portions of the lower photoresist and (2) to form a (e.g., thin NiFeO) passivation layer on the MR layer at least partially under the upper photoresist layer. The passivation layer is etched to remove the passivation layer not covered by the lift-off structure. Then, a lead layer is deposited over the passivation layer and MR sensor. The lift-off structure is removed.
摘要翻译：在MR传感器上形成钝化层的方法，使得钝化层限定轨道宽度。钝化层与氧化MR传感器并显影光致抗蚀剂的新型显影/氧化溶液中的剥离结构的发展同时形成。钝化层是电绝缘体，其防止传感器电流通过引线的过度喷射和热导体分流，以允许MR热量通过过喷器消散。该方法包括：在MR传感器上旋转并打印剥离光致抗蚀剂结构。接下来，开发剥离光致抗蚀剂结构。将MR传感器在显影/氧化溶液中进行阳极氧化，以：（1）去除下部光致抗蚀剂的部分，和（2）在MR层上至少部分地在上部光致抗蚀剂层下形成（例如，薄的NiFeO）钝化层。钝化层被蚀刻以除去未被剥离结构覆盖的钝化层。然后，在钝化层和MR传感器上沉积引线层。剥离结构被去除。

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