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41. 发明申请

US20130078798A1 METHOD FOR IMPROVING THE ELECTROMIGRATION RESISTANCE IN THE COPPER INTERCONNECTION PROCESS 有权
标题翻译：提高铜相互连接过程中电阻率的方法
公开(公告)号：US20130078798A1
公开(公告)日：2013-03-28
申请号：US13528474
申请日：2012-06-20
申请人： Qingqing Sun , Lin Chen , Wen Yang , Pengfei Wang , Wei Zhang
发明人： Qingqing Sun , Lin Chen , Wen Yang , Pengfei Wang , Wei Zhang
IPC分类号： H01L21/768
CPC分类号： H01L21/823871 , H01L21/76805 , H01L21/76843 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76858 , H01L21/76865 , H01L21/76867 , H01L21/76895 , H01L23/485 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The present invention belongs to the technical field of integrated semiconductor circuits, and relates to a method used in a process no greater than 32 nm to improve the electromigration resistance of Cu interconnects. Coating layers on Cu interconnects, such as CuSi3, CuGe, and CuSiN, can be prepared by autoregistration, and with the use of new impervious layer materials, the electromigration resistance of Cu interconnects can be largely improved and the high conductivity thereof can be kept, which provides an ideal solution for interconnection process for process nodes no greater than 32 nm.
摘要翻译：本发明属于集成半导体电路的技术领域，涉及在不超过32nm的工艺中使用的方法来提高Cu互连的电迁移率。铜互连上的涂层如CuSi3，CuGe和CuSiN可以通过自动配准来制备，并且通过使用新的不透水层材料，可以大大提高Cu互连的电迁移电阻，并且可以保持高导电性，这为不超过32nm的工艺节点的互连工艺提供了理想的解决方案。

42. 发明申请

US20120305882A1 NiO-based Resistive Random Access Memory and the Preparation Method Thereof 审中-公开
标题翻译：基于NiO的电阻随机存取存储器及其制备方法
公开(公告)号：US20120305882A1
公开(公告)日：2012-12-06
申请号：US13498973
申请日：2011-09-23
申请人： Jingjing Gu , Qingqing Sun , Pengfei Wang , Peng Zhou , Wei Zhang
发明人： Jingjing Gu , Qingqing Sun , Pengfei Wang , Peng Zhou , Wei Zhang
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L45/146 , G11C13/0007 , H01L45/06 , H01L45/16
摘要： The present invention belongs to the technical field of memory storage and specially relates to a NiO-based resistive random access memory system (RRAM) and a preparation method thereof. The RRAM is comprised of a substrate and a metal-insulator-metal (MIM) structure, wherein the electrodes are metal films, such as copper, aluminum, etc., capable of being applied to the interconnection process, and the resistive switching insulator is an Al2O3/NiO/Al2O3 laminated dielectric film. The MIM structure in the invention shows stable switching between the bi-stable resistance states as well as memory features; compared with the RRAM that only uses a single NiO-based dielectric film, the storage window is increased, and the resistance stability is improved. Therefore, the NiO-based RRAM has a good prospect in actual application. The present invention further provides a method for preparing the abovementioned memory storage system.
摘要翻译：本发明属于存储器的技术领域，特别涉及一种基于NiO的电阻随机存取存储器（RRAM）及其制备方法。 RRAM由衬底和金属 - 绝缘体 - 金属（MIM）结构构成，其中电极是可应用于互连工艺的金属膜，例如铜，铝等，并且电阻式开关绝缘子是 Al2O3 / NiO / Al2O3层压电介质膜。本发明的MIM结构显示了稳定的电阻状态和存储特征之间的稳定切换; 与仅使用单个NiO基电介质膜的RRAM相比，存储窗口增加，并且电阻稳定性得到改善。因此，基于NiO的RRAM在实际应用中具有良好的前景。本发明还提供了一种用于制备上述存储器存储系统的方法。

43. 发明申请

US20120273866A1 Semiconductor Memory Device with a Buried Drain and Its Memory Array 有权
标题翻译：具有埋漏的半导体存储器件及其存储器阵列
公开(公告)号：US20120273866A1
公开(公告)日：2012-11-01
申请号：US13322640
申请日：2010-12-24
申请人： Pengfei Wang , Qingqing Sun , Shijin Ding , Wei Zhang
发明人： Pengfei Wang , Qingqing Sun , Shijin Ding , Wei Zhang
IPC分类号： H01L29/792
CPC分类号： H01L21/28273 , H01L27/11521
摘要： A semiconductor memory device with a buried drain is provided. The device comprises a semiconductor substrate (107); one drain region (108) of a first doping type; two source regions (101a,101b) of a second doping type; and a stacked gate provided on the semiconductor substrate for capturing electrons. A memory array formed by a plurality of semiconductor memory devices. and a manufacturing method thereof are also provided. The semiconductor memory device has the advantages of small cell area, simple manufacturing process and the like. The manufacturing cost of the memory device is reduced and the storing density of the memory device is increased.
摘要翻译：提供了一种具有埋地漏极的半导体存储器件。该器件包括半导体衬底（107）; 一个第一掺杂类型的漏极区域（108）; 具有第二掺杂类型的两个源极区域（101a，101b）以及设置在半导体基板上用于捕获电子的堆叠栅极。由多个半导体存储器件形成的存储器阵列。还提供了其制造方法。半导体存储器件具有电池面积小，制造工艺简单等优点。存储器件的制造成本降低，并且存储器件的存储密度增加。

44. 发明申请

US20120200342A1 GATE CONTROLLED PN FIELD-EFFECT TRANSISTOR AND THE CONTROL METHOD THEREOF 审中-公开
标题翻译：门控制PN场效应晶体管及其控制方法
公开(公告)号：US20120200342A1
公开(公告)日：2012-08-09
申请号：US13501826
申请日：2011-05-19
申请人： Pengfei Wang , Songgan Zang , Qingqing Sun , Wei Zhang
发明人： Pengfei Wang , Songgan Zang , Qingqing Sun , Wei Zhang
IPC分类号： G05F3/02 , H01L29/04 , H01L29/78
CPC分类号： H01L29/7391 , H01L29/66356
摘要： The present invention belongs to the technical field of semiconductor devices, and more specifically, relates to a gate-controlled PN field-effect transistor and the control method thereof The gate-controlled PN field-effect transistor disclosed by the present invention comprises a semiconductor substrate region, a drain region and a source region on the left and right sides of the substrate region, and gate regions on the upper and lower sides of the substrate region. The gate-controlled PN field-effect transistor works in the positive bias state of the source-drain PN junction and is conducted from the middle of the substrate region. The gate-controlled PN field-effect transistor provided by the present invention decreases the leakage current and increases the drive current at the same time, namely decreases the chip power consumption and improves the chip performances at the same time. The present invention further discloses a method for controlling the gate-controlled PN field-effect transistor, including cut-off and conduction operation.
摘要翻译：本发明属于半导体器件的技术领域，更具体地涉及一种栅极控制PN场效应晶体管及其控制方法本发明公开的栅极控制PN场效应晶体管包括半导体衬底区域，漏极区域和源极区域以及衬底区域的上侧和下侧上的栅极区域。栅极控制的PN场效应晶体管工作在源极 - 漏极PN结的正偏置状态，并从衬底区域的中间传导。本发明提供的栅控PN场效应晶体管同时降低漏电流并增加驱动电流，即降低芯片功耗，同时提高芯片性能。本发明还公开了一种用于控制栅极控制的PN场效应晶体管的方法，包括截止和导通操作。

45. 发明申请

US20120182063A1 Power Device Using Photoelectron Injection to Modulate Conductivity and the Method Thereof 审中-公开
标题翻译：使用光电子注入的功率器件调制电导率及其方法
公开(公告)号：US20120182063A1
公开(公告)日：2012-07-19
申请号：US13498778
申请日：2011-04-21
申请人： Pengfei Wang , Qingqing Sun , Shijin Ding , Wei Zhang
发明人： Pengfei Wang , Qingqing Sun , Shijin Ding , Wei Zhang
IPC分类号： H01L31/167
CPC分类号： H01L31/1136 , H01L31/167
摘要： The present invention belongs to the technical field of semiconductor devices, and discloses a power device using photoelectron injection to modulate conductivity and the method thereof. The power device comprises at least one photoelectron injection light source and a power MOS transistor. The present invention uses photoelectron injection method to inject carriers to the drift region under the gate of the power MOS transistor, thus modulating the conductivity and further decreasing the specific on-resistance of the power MOS transistor. Moreover, as the doping concentration of the drift region can be decreased and the blocking voltage can be increased, the performance of the power MOS transistor can be greatly improved and the application of power MOS transistor can be expanded to high-voltage fields.
摘要翻译：本发明属于半导体器件的技术领域，并且公开了使用光电子注入来调节电导率的功率器件及其方法。功率器件包括至少一个光电子注入光源和功率MOS晶体管。本发明使用光电子注入方法将载流子注入功率MOS晶体管的栅极下方的漂移区域，从而调制导电率并进一步降低功率MOS晶体管的比导通电阻。此外，随着漂移区域的掺杂浓度可以降低并且可以提高阻挡电压，可以大大提高功率MOS晶体管的性能，并且可以将功率MOS晶体管的应用扩展到高电压场。

46. 外观设计

USD1004162S1 Outdoor lamp 有权
公开(公告)号：USD1004162S1
公开(公告)日：2023-11-07
申请号：US29743460
申请日：2020-07-22
申请人： Bruce Pi , Wei Kang , Zhixiang Chen , Wei Zhang
设计人： Bruce Pi , Wei Kang , Zhixiang Chen , Wei Zhang
摘要： FIG. 1 is a perspective view of an outdoor lamp showing our new design.
FIG. 2 is a front elevation view thereof;
FIG. 3 is a rear elevation view thereof;
FIG. 4 is a left side elevation view thereof;
FIG. 5 is a right side elevation view thereof;
FIG. 6 is a top plan view thereof; and,
FIG. 7 is a bottom plan view thereof.

47. 发明申请

US20220110303A1 APPARATUS AND METHODS FOR EXPANDING AND COLLAPSING A ROD 有权
公开(公告)号：US20220110303A1
公开(公告)日：2022-04-14
申请号：US17067711
申请日：2020-10-11
申请人： Wei Zhang
发明人： Wei Zhang
IPC分类号： A01K87/02
摘要： Methods and apparatus for expanding a rod from a collapsed position to a formed position are disclosed. One such apparatus includes a plurality of segments for forming the body of the collapsible rod including with each segment coupled to each immediately adjacent segment of the plurality of segments. The apparatus may include a coupler for coupling each segment of the plurality of segments to each immediately adjacent segment of the plurality of segments. The coupler may stretch from a base segment to the tip of the apparatus and may be biased to apply a force to hold the plurality of segments in a formed position and to urge the plurality of segments into a formed position from a collapsed position. In the formed position, the plurality of segments may be aligned end-to-end to form a rod and in the collapsed position, the plurality of segments may be folded against each other such that cylindrical walls of each of the plurality of segments are positioned adjacent each other.

48. 发明申请

US20180295974A1 Convertible Bullet-proof Backpack 审中-公开
公开(公告)号：US20180295974A1
公开(公告)日：2018-10-18
申请号：US15731045
申请日：2017-04-12
申请人： Wei Zhang
发明人： Wei Zhang
IPC分类号： A45F4/02 , F41H1/02 , A45C15/00 , F41H5/08
CPC分类号： A45F4/02 , A45C3/001 , A45C7/0068 , A45C13/103 , A45C15/00 , A45F3/04 , A45F3/06 , F41H1/00 , F41H1/02 , F41H5/00 , F41H5/08
摘要： A convertible bullet-proof backpack and vest includes a body section divided into a front portion, a middle portion, and back portion. The middle portion has a head slot opening, and the front and back portions have respective sections of bullet-proof fabric integrated therein. A zipper runs around an outer perimeter of the front and back portions. In a backpack configuration, the front portion and the back portion fold toward each other and the zipper secures the outer perimeters of the front portion and the back portion together thereby forming a hollow backpack interior between them. In a bullet-proof vest configuration, the zipper is unzipped thereby allowing a user to insert their head through the head slot opening such that the front portion hangs in front of a torso of the user and the back portion hangs behind the torso of the user.

49. 发明申请

US20180177625A1 APPARATUS AND METHOD FOR TREATING MALE IMPOTENCE 审中-公开
公开(公告)号：US20180177625A1
公开(公告)日：2018-06-28
申请号：US15820401
申请日：2017-11-21
申请人： Wei Zhang
发明人： Wei Zhang
IPC分类号： A61F5/41
CPC分类号： A61F5/41 , A61F2005/411
摘要： The present invention strategically utilizes the sturdiness of thin wires enwrapped inside a thick layer of soft material such as silicone rubber which is smoother and softer than human tissue. Therefore, the device doesn't cause any damage or side effect and feels comfortable to user. The exposure of skin is 90% or higher, therefore solves the lack of sensation issue faced by prior art devices. The device is hard and yet flexible, the side walls or double bars are positioned toward ventral side of the device so that it is pleasing to the eye during use in addition to feeling good by the user.

50. 发明授权

US09574001B2 Humanized single-chain antibody against beta 3 integrin for the treatment and prevention of metastasis 有权
标题翻译：针对β3整联蛋白的人源化单链抗体用于治疗和预防转移
公开(公告)号：US09574001B2
公开(公告)日：2017-02-21
申请号：US13958145
申请日：2013-08-02
申请人： Thomas M. Wisniewski , Wei Zhang , Suying Dang
发明人： Thomas M. Wisniewski , Wei Zhang , Suying Dang
IPC分类号： A61K39/395 , C07K16/28 , A61K39/00
CPC分类号： C07K16/2848 , A61K2039/505 , C07K2317/622 , C07K2317/73
摘要： The present invention relates to methods inhibiting tumor metastasis and treating cancer in a subject that involve administering to the subject an antibody which recognizes GPIIIa49-66, under conditions effective to inhibit tumor metastasis and/or treat cancer in the subject.
摘要翻译：本发明涉及在受试者中抑制肿瘤转移和治疗癌症的方法，所述方法包括在有效抑制肿瘤转移和/或治疗受试者的癌症的条件下向受试者施用识别GPIIIa49-66的抗体。

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