专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20070029930A1 Electron tube 有权
标题翻译：电子管
公开(公告)号：US20070029930A1
公开(公告)日：2007-02-08
申请号：US10571077
申请日：2004-09-09
申请人： Motohiro Suyama , Hiroyuki Kyushima , Suenori Kimura , Yasuharu Negi , Atsuhito Fukasawa , Yoshihiko Kawai , Atshushi Uchiyama , Yasuyuki Egawa
发明人： Motohiro Suyama , Hiroyuki Kyushima , Suenori Kimura , Yasuharu Negi , Atsuhito Fukasawa , Yoshihiko Kawai , Atshushi Uchiyama , Yasuyuki Egawa
IPC分类号： H01J40/06
CPC分类号： H01J40/16
摘要： In an electron tube, an insulating tube protrudes inside an envelope. One end of the insulating tube is connected to the envelope. An avalanche photo diode (APD) is provided on the other end of the insulating tube. A ground voltage is applied to the envelope and a positive high voltage is applied to the APD. Photoelectrons which are emitted in response to an incident light on a photocathode are converged by an electrical field in the envelope and enter the APD. Thereafter, the incident photoelectrons are amplified and detected. Since a positive high voltage is not exposed to the envelope, the electron tube can easily be handled and is excellent in safety.
摘要翻译：在电子管中，绝缘管在外壳内突出。绝缘管的一端连接到外壳。在绝缘管的另一端设置有雪崩光电二极管（APD）。将接地电压施加到封套，并向APD施加正高电压。响应于光电阴极上的入射光而发射的光电子被信封中的电场会聚并进入APD。此后，对入射光电子进行放大和检测。由于正高电压不暴露于外壳，电子管可以容易地被处理并且安全性优异。

42. 发明申请

US20070023652A1 Electron beam detection device and electron tube 有权
标题翻译：电子束检测装置和电子管
公开(公告)号：US20070023652A1
公开(公告)日：2007-02-01
申请号：US10571322
申请日：2004-09-09
申请人： Hiroyuki Kyushima , Motohiro Suyama , Suenori Kimura , Yasuharu Negi , Yoshihiko Kawai , Atsuhito Fukasawa
发明人： Hiroyuki Kyushima , Motohiro Suyama , Suenori Kimura , Yasuharu Negi , Yoshihiko Kawai , Atsuhito Fukasawa
IPC分类号： G21K7/00
CPC分类号： H01J40/14 , H01J43/30 , H01J2237/244
摘要： An insulating tube has one end and another end. An An avalanche photodiode (APD) is provided outside the one end of the insulating tube. The another end of the insulating tube is air-tightly connected to an outer flange through a stem inner wall. Capacitors electrically connected to the APD are provided in the insulating tube. The capacitors remove direct current components from signals that the APD generates when detecting electrons. By providing the capacitors in the insulating tube, response of output signals can be prevented from being impaired.
摘要翻译：绝缘管具有一端和另一端。安全雪崩光电二极管（APD）设置在绝缘管一端的外侧。绝缘管的另一端通过杆内壁与外凸缘气密连接。电连接到APD的电容器设置在绝缘管中。电容器从检测电子时产生的信号中除去直流电流分量。通过在绝缘管中设置电容器，可以防止输出信号的响应受损。

43. 发明授权

US5654536A Photomultiplier having a multilayer semiconductor device 失效
标题翻译：具有多层半导体器件的光电倍增管
公开(公告)号：US5654536A
公开(公告)日：1997-08-05
申请号：US557541
申请日：1995-11-14
申请人： Motohiro Suyama , Masaharu Muramatsu , Makoto Oishi , Yoshitaka Ishikawa , Koei Yamamoto
发明人： Motohiro Suyama , Masaharu Muramatsu , Makoto Oishi , Yoshitaka Ishikawa , Koei Yamamoto
IPC分类号： H01J43/04 , H01J43/12 , H01L31/107 , H01J40/14
CPC分类号： H01L31/1075 , H01J43/04 , H01J43/12
摘要： In a photomultiplier of the present invention, a semiconductor device arranged in an envelope to oppose a photocathode is constituted by a semiconductor substrate of a first conductivity type, a carrier multiplication layer of a second conductivity type different from the first conductivity type, which is formed on the semiconductor substrate by opitaxial growth, a breakdown voltage control layer of the second conductivity type, which is formed on the carrier multiplication layer and has a dopant concentration higher than that of the carrier multiplication layer, a first insulating layer formed on the breakdown voltage control layer and said carrier multiplication layer while partially exposing the surface of the breakdown voltage control layer as a receptor for photoelectrons and consisting of a nitride, and an ohmic electrode layer formed on a peripheral surface portion of the receptor of the breakdown voltage control layer. When the dopant concentration distribution in the carrier multiplication layer is uniformly controlled on the basis of epitaxial growth, the uniformity of an avalanche multiplication gain for photoelectrons incident at different positions on the receptor of the semiconductor device is improved, thereby largely increasing the energy resolving power.
摘要翻译：在本发明的光电倍增器中，布置在外壳中以与光电阴极相对的半导体器件由第一导电类型的半导体衬底，不同于第一导电类型的第二导电类型的载流子倍增层构成，形成在所述半导体衬底上通过外延生长形成第二导电类型的击穿电压控制层，所述第二导电类型的击穿电压控制层形成在所述载体倍增层上并且具有高于载流子倍增层的掺杂剂浓度的第一绝缘层，控制层和所述载体倍增层，同时部分地暴露作为光电子的受体的击穿电压控制层的表面，并由氮化物和形成在击穿电压控制层的受体的外围表面部分上的欧姆电极层组成。当基于外延生长均匀地控制载体倍增层中的掺杂剂浓度分布时，提高入射在半导体器件的接收器上的不同位置处的光电子的雪崩倍增益的均匀性，从而大大提高能量分辨能力。

44. 发明授权

US5180908A Device for deriving a change of time-dependent information by converting the information to positional-dependent information 失效
标题翻译：通过将信息转换为与位置相关的信息来改变时间相关信息的设备
公开(公告)号：US5180908A
公开(公告)日：1993-01-19
申请号：US759292
申请日：1991-09-13
申请人： Motohiro Suyama
发明人： Motohiro Suyama
IPC分类号： G01J1/00 , G01J1/02 , G01T1/29 , G01T1/36 , H01J31/50
CPC分类号： H01J31/502
摘要： Time-dependent information such as light whose intensity varies with time is converted into positional information representing the change of the time-dependent information. A series of photoelectrons provided as the time-dependent information are accelerated or decelerated when passing through a region defined by first and second electrode to which a ramp voltage is applied so that the photoelectrons are accelerated or decelerated and are released at speeds varying depending on times. A speed analyzer analyzes the speeds of the photoelectrons and provides the positional information. The positional information is applied to a phosphor screen on which the positions of the photoelectrons applied thereto are displayed. The positions thereof represents the times involved with the photoelectrons.

45. 发明授权

US5168164A Optical waveform measuring device 失效
标题翻译：光学波形测量装置
公开(公告)号：US5168164A
公开(公告)日：1992-12-01
申请号：US858861
申请日：1992-03-27
申请人： Tsuneyuki Urakami , Motohiro Suyama
发明人： Tsuneyuki Urakami , Motohiro Suyama
IPC分类号： G01J11/00
CPC分类号： G01J11/00
摘要： When sampling light and light to be measured each having a wavelength longer than an upper wavelength limit of the sensitivity of a photocathode are incident on the photocathode of a multiphoton absorption-type electron tube, light-light sampling is enabled by two-photon absorption and one-photoelectron emission. A delaying unit adjusts an incident timing of the sampling light from an optical pulse generating unit on the elctron tube in synchronism with an incident timing of the light to be measured on the electron tube. A half mirror causes the sampling light and the light to be measured to coincide on the photocathode of the electron tube. A controlling unit controls the delaying unit to sequentially shift the incident timing of the sampling light on the electron tube. Thus, the operation of a display unit can be controlled in synchronism with the incident timing of the sampling light so that a series of sampling outputs from the electron tube can be converted to the optical waveform of the light to be measured and displayed on the display unit.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式