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41. 发明申请

US20100022074A1 SUBSTRATE RELEASE METHODS AND APPARATUSES 有权
标题翻译：基板释放方法和装置
公开(公告)号：US20100022074A1
公开(公告)日：2010-01-28
申请号：US12473811
申请日：2009-05-28
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L31/18 , H01L21/76259
摘要： The present disclosure relates to methods and apparatuses for fracturing or breaking a buried porous semiconductor layer to separate a 3-D thin-film semiconductor semiconductor (TFSS) substrate from a 3-D crystalline semiconductor template. The method involves forming a sacrificial porous semiconductor layer on the 3-D features of the template. A variety of techniques may be used to fracture and release the mechanically weak porous semiconductor layer without damaging the TFSS substrate layer or the template layer such as pressure variations, thermal stress generation, and mechanical bending. The methods also allow for processing three dimensional features not possible with current separation processes. Optional cleaning and final lift-off steps may be performed as part of the release step or after the release step.
摘要翻译：本公开内容涉及用于将埋入的多孔半导体层断裂或断裂以从3-D晶体半导体模板分离3-D薄膜半导体（TFSS）衬底的方法和装置。该方法包括在模板的3-D特征上形成牺牲多孔半导体层。可以使用各种技术来破坏和释放机械上的弱多孔半导体层，而不会损坏TFSS衬底层或模板层，例如压力变化，热应力产生和机械弯曲。这些方法还允许处理当前分离过程不可能的三维特征。可以在释放步骤的一部分或释放步骤之后执行可选的清洁和最终剥离步骤。

42. 发明申请

US20090042320A1 METHODS FOR LIQUID TRANSFER COATING OF THREE-DIMENSIONAL SUBSTRATES 有权
标题翻译：三维基质液体转移涂层方法
公开(公告)号：US20090042320A1
公开(公告)日：2009-02-12
申请号：US12193415
申请日：2008-08-18
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi , Somnath Nag
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi , Somnath Nag
IPC分类号： H01L21/66
CPC分类号： B01D1/22 , H01L21/02617 , H01L21/6715 , H01L22/12 , H01L31/035281 , H01L31/046 , H01L31/1872 , H01L31/1892 , H01L31/202 , H05K1/0284 , H05K3/046 , H05K3/1258 , H05K3/207 , H05K2201/09036 , H05K2201/09045 , H05K2203/0126 , H05K2203/0528 , H05K2203/308 , Y02E10/50 , Y02P70/521
摘要： Methods here disclosed provide for selectively coating the top surfaces or ridges of a 3-D substrate while avoiding liquid coating material wicking into micro cavities on 3-D substrates. The substrate includes holes formed in a three-dimensional substrate by forming a sacrificial layer on a template. The template includes a template substrate with posts and trenches between the posts. The steps include subsequently depositing a semiconductor layer and selectively etching the sacrificial layer. Then, the steps include releasing the semiconductor layer from the template and coating the 3-D substrate using a liquid transfer coating step for applying a liquid coating material to a surface of the 3-D substrate. The method may further include coating the 3-D substrate by selectively coating the top ridges or surfaces of the substrate. Additional features may include filling the micro cavities of the substrate with a filling material, removing the filling material to expose only the substrate surfaces to be coated, coating the substrate with a layer of liquid coating material, and removing said filling material from the micro cavities of the substrate.
摘要翻译：这里公开的方法提供了选择性地涂覆3-D衬底的顶表面或脊，同时避免液体涂覆材料吸收到3-D衬底上的微腔中。衬底包括通过在模板上形成牺牲层而形成在三维衬底中的孔。模板包括具有在柱之间的柱和沟槽的模板衬底。这些步骤包括随后沉积半导体层并选择性地蚀刻牺牲层。然后，该步骤包括从模板中释放半导体层并使用用于将液体涂覆材料施加到3-D衬底的表面的液体转移涂覆步骤涂覆3-D衬底。该方法还可以包括通过选择性地涂覆衬底的顶部脊或表面来涂覆3-D衬底。附加特征可以包括用填充材料填充衬底的微腔，去除填充材料以仅暴露待涂覆的衬底表面，用一层液体涂覆材料涂覆衬底，以及从微孔中移除所述填充材料的基底。

43. 发明授权

US09330952B2 Bipolar mobile electrostatic carriers for wafer processing 有权
标题翻译：用于晶圆处理的双极移动静电载体
公开(公告)号：US09330952B2
公开(公告)日：2016-05-03
申请号：US13520139
申请日：2010-12-30
申请人： Mehrdad M. Moslehi , David Xuan-Qi Wang
发明人： Mehrdad M. Moslehi , David Xuan-Qi Wang
IPC分类号： H01L21/683 , G03F7/20 , H01L21/762 , H01L21/768
CPC分类号： H01L21/6833 , G03F7/70708 , H01L21/02164 , H01L21/0217 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/3065 , H01L21/683 , H01L21/6831 , H01L21/76251 , H01L21/76275 , H01L21/76281 , H01L21/76879 , H02N13/00 , Y02P80/30
摘要： In one embodiment, there is provided a carrier comprising a top semiconductor layer having isolated positive electrode regions and isolated negative electrode regions separated by a frontside trench through the top semiconductor layer extending at least to an underlying insulating layer positioned between the top semiconductor layer and a bottom semiconductor layer. A dielectric layer covers the top exposed surfaces of the carrier. Backside trenches through the bottom semiconductor layer extending at least to the insulating layer form isolated backside regions corresponding to the frontside positive and negative electrode regions. Backside contacts positioned on the bottom semiconductor layer and coupled to the positive and negative electrode regions allow for the electric charging of the frontside electrode regions.
摘要翻译：在一个实施例中，提供了一种载体，其包括顶部半导体层，其具有隔离的正电极区域和分离的负电极区域，所述隔离的负电极区域通过顶部半导体层被前侧沟槽分隔开，所述顶部半导体层至少延伸到位于顶部半导体层和底部半导体层。电介质层覆盖载体的顶部暴露表面。通过至少延伸至绝缘层的底部半导体层的背面沟槽形成对应于正面正极和负极区域的隔离的背侧区域。位于底部半导体层上并且耦合到正极和负极区域的背面触点允许前侧电极区域的电荷。

44. 发明授权

US08288195B2 Method for fabricating a three-dimensional thin-film semiconductor substrate from a template 有权
标题翻译：从模板制造三维薄膜半导体衬底的方法
公开(公告)号：US08288195B2
公开(公告)日：2012-10-16
申请号：US12731058
申请日：2010-03-24
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： H01L21/00
CPC分类号： H01L31/18 , H01L31/0236 , H01L31/035281 , H01L31/068 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A method is presented for fabrication of a three-dimensional thin-film solar cell semiconductor substrate from a template. A semiconductor template having three-dimensional surface features comprising a top surfaces substantially aligned along a (100) crystallographic plane of semiconductor template and a plurality of inverted pyramidal cavities defined by sidewalls substantially aligned along a (111) crystallographic plane is formed according to an anisotropic etching process. A dose of relatively of high energy light-mass species is implanted in the template at a uniform depth and parallel to the top surfaces and said sidewalls defining the inverted pyramidal cavities of the template. The semiconductor template is annealed to convert the dose of relatively of high energy light-mass species to a mechanically-weak-thin layer. The semiconductor template is cleaved along the mechanically-weak-thin layer to release a three-dimensional thin-film semiconductor substrate from the semiconductor template.
摘要翻译：介绍了从模板制造三维薄膜太阳能电池半导体衬底的方法。具有三维表面特征的半导体模板包括沿着半导体模板的（100）结晶平面基本上对准的顶表面和由沿（111）晶面平行排列的侧壁限定的多个倒置金字塔形腔，根据各向异性蚀刻工艺。将相对高能量光质物质的剂量以均匀的深度注入模板中，并平行于顶表面和限定模板的倒锥形腔的所述侧壁。将半导体模板退火以将相对较高能量的光质物质的剂量转换成机械弱薄层。半导体模板沿着机械弱薄层切割，以从半导体模板释放三维薄膜半导体衬底。

45. 发明授权

US08168465B2 Three-dimensional semiconductor template for making high efficiency thin-film solar cells 有权
标题翻译：制造高效薄膜太阳能电池的三维半导体模板
公开(公告)号：US08168465B2
公开(公告)日：2012-05-01
申请号：US12618649
申请日：2009-11-13
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： H01L31/18
CPC分类号： H01L31/0236 , H01L21/3065 , H01L29/045 , H01L29/0657 , H01L31/022425 , H01L31/02363 , H01L31/035281 , H01L31/056 , H01L31/068 , H01L31/18 , H01L31/1804 , H01L31/182 , H01L31/1892 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10T117/1092
摘要： A semiconductor template having a top surface aligned along a (100) crystallographic orientation plane and an inverted pyramidal cavity defined by a plurality of walls aligned along a (111) crystallographic orientation plane. A method for manufacturing a semiconductor template by selectively removing silicon material from a silicon template to form a top surface aligned along a (100) crystallographic plane of the silicon template and a plurality of walls defining an inverted pyramidal cavity each aligned along a (111) crystallographic plane of the silicon template.
摘要翻译：具有沿着（100）晶体取向平面排列的顶表面和由沿着（111）晶体取向平面排列的多个壁限定的倒置金字塔腔的半导体模板。一种用于通过从硅模板中选择性地去除硅材料以形成沿硅模板的（100）结晶平面排列的顶表面的多个壁，以及限定沿着（111）硅模板的晶体平面。

46. 发明申请

US20100175752A1 High-Efficiency Thin-Film Solar Cells 有权
标题翻译：高效薄膜太阳能电池
公开(公告)号：US20100175752A1
公开(公告)日：2010-07-15
申请号：US12618668
申请日：2009-11-13
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： H01L31/0236 , H01L31/18
CPC分类号： H01L31/0236 , H01L21/3065 , H01L29/045 , H01L29/0657 , H01L31/022425 , H01L31/02363 , H01L31/035281 , H01L31/056 , H01L31/068 , H01L31/18 , H01L31/1804 , H01L31/182 , H01L31/1892 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10T117/1092
摘要： A three-dimensional solar cell comprising a semiconductor substrate with an inverted pyramidal cavity, emitter metallization regions on ridges on the surface of the semiconductor substrate which define an opening of the inverted pyramidal cavity, and base metallization regions on a region which form the apex of the inverted pyramidal cavity. A method for fabricating a three-dimensional thin-film solar cell from an inverted pyramidal three-dimensional thin-film silicon substrate by doping ridges on the surface of the semiconductor substrate which define an opening of an inverted pyramidal cavity on the substrate to form an emitter region, and doping a region which forms the apex of the inverted pyramidal cavity to form a base region. Adding a surface passivation layer to the surface of the substrate. Selectively etching the passivation layer from the emitter region and base region. Then concurrently metallizing the emitter region and base region.
摘要翻译：一种三维太阳能电池，包括具有反锥体腔的半导体衬底，在半导体衬底的表面上的脊上的发射极金属化区域，其限定了倒锥形腔的开口，以及在形成顶角的区域上的基底金属化区域倒锥体腔。一种通过在半导体衬底的表面上掺杂脊来限定反向锥形三维薄膜硅衬底的三维薄膜太阳能电池的方法，该衬底限定了衬底上的反锥体腔的开口以形成并且掺杂形成倒锥体腔的顶点的区域以形成基区。将表面钝化层添加到基材的表面。从发射极区域和基极区域选择性地蚀刻钝化层。然后同时金属化发射极区域和基极区域。

47. 发明申请

US20100116316A1 TRUNCATED PYRAMID STRUCTURES FOR SEE-THROUGH SOLAR CELLS 有权
标题翻译：用于观察太阳能电池的截止的PYRAMID结构
公开(公告)号：US20100116316A1
公开(公告)日：2010-05-13
申请号：US12626778
申请日：2009-11-27
申请人： Mehrdad M. Moslehi , David Xuan-Qi Wang
发明人： Mehrdad M. Moslehi , David Xuan-Qi Wang
IPC分类号： H01L31/042 , H01L21/306 , H01L31/18
CPC分类号： H01L31/0352 , H01L31/035281 , H01L31/04 , H01L31/18 , Y02E10/50
摘要： The present disclosure presents a partially-transparent (see-through) three-dimensional thin film solar cell (3-D TFSC) substrate. The substrate includes a plurality of unit cells. Each unit cell structure has the shape of a truncated pyramid, and its parameters may be varied to allow a desired portion of sunlight to pass through.
摘要翻译：本公开提供了部分透明（透明）三维薄膜太阳能电池（3-D TFSC）基板。基板包括多个单元电池。每个单元电池结构具有截头棱锥形状，并且其参数可以变化以允许期望的太阳光部分通过。

48. 发明申请

US20100203711A1 Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template 有权
标题翻译：用于从可重复使用的半导体模板中释放薄膜基板的沟槽形成方法
公开(公告)号：US20100203711A1
公开(公告)日：2010-08-12
申请号：US12702187
申请日：2010-02-08
申请人： David Xuan-Qi Wang , Mehrdad Moslehi
发明人： David Xuan-Qi Wang , Mehrdad Moslehi
IPC分类号： H01L21/20
CPC分类号： H01L31/035281 , H01L21/76229 , H01L21/76232 , H01L31/03529 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method is provided for fabricating a thin-film semiconductor substrate by forming a porous semiconductor layer conformally on a reusable semiconductor template and then forming a thin-film semiconductor substrate conformally on the porous semiconductor layer. An inner trench having a depth less than the thickness of the thin-film semiconductor substrate is formed on the thin-film semiconductor substrate. An outer trench providing access to the porous semiconductor layer is formed on the thin-film semiconductor substrate and is positioned between the inner trench and the edge of the thin-film semiconductor substrate. The thin-film semiconductor substrate is then released from the reusable semiconductor template.
摘要翻译：提供了一种用于通过在可重复使用的半导体模板上保形地形成多孔半导体层然后在多孔半导体层上保形地形成薄膜半导体衬底来制造薄膜半导体衬底的方法。在薄膜半导体衬底上形成深度小于薄膜半导体衬底厚度的内沟槽。提供对多孔半导体层的访问的外部沟槽形成在薄膜半导体衬底上并且位于内部沟槽和薄膜半导体衬底的边缘之间。然后从可重复使用的半导体模板中释放薄膜半导体衬底。

49. 发明申请

US20130273721A1 Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template 有权
标题翻译：用于从可重复使用的半导体模板中释放薄膜基板的沟槽形成方法
公开(公告)号：US20130273721A1
公开(公告)日：2013-10-17
申请号：US13633723
申请日：2012-10-02
申请人： David Xuan-Qi Wang , Mehrdad Moslehi
发明人： David Xuan-Qi Wang , Mehrdad Moslehi
IPC分类号： H01L21/02
CPC分类号： H01L21/0243 , F16L21/035 , H01L21/7806 , H01L21/7813 , H01L31/00
摘要： A method is provided for fabricating a thin-film semiconductor substrate by forming a porous semiconductor layer conformally on a reusable semiconductor template and then forming a thin-film semiconductor substrate conformally on the porous semiconductor layer. An inner trench having a depth less than the thickness of the thin-film semiconductor substrate is formed on the thin-film semiconductor substrate. An outer trench providing access to the porous semiconductor layer is formed on the thin-film semiconductor substrate and is positioned between the inner trench and the edge of the thin-film semiconductor substrate. The thin-film semiconductor substrate is then released from the reusable semiconductor template.
摘要翻译：提供了一种用于通过在可重复使用的半导体模板上保形地形成多孔半导体层然后在多孔半导体层上保形地形成薄膜半导体衬底来制造薄膜半导体衬底的方法。在薄膜半导体衬底上形成深度小于薄膜半导体衬底厚度的内沟槽。提供对多孔半导体层的访问的外部沟槽形成在薄膜半导体衬底上并且位于内部沟槽和薄膜半导体衬底的边缘之间。然后从可重复使用的半导体模板中释放薄膜半导体衬底。

50. 发明申请

US20130140838A1 MOBILE VACUUM CARRIERS FOR THIN WAFER PROCESSING 审中-公开
标题翻译：用于薄膜加工的移动真空载体
公开(公告)号：US20130140838A1
公开(公告)日：2013-06-06
申请号：US13515848
申请日：2010-12-15
申请人： David Xuan-Qi Wang , Mehrdad Moslehi
发明人： David Xuan-Qi Wang , Mehrdad Moslehi
IPC分类号： H01L21/677
CPC分类号： H01L21/677 , H01L21/6838 , H01L21/6875
摘要： This disclosure presents mobile vacuum carriers that may be used to support thin substrates that would otherwise be too brittle to transport and process. This disclosure relates to the processing of thin semiconductor substrates and has particular applicability to the fields of photovoltaic solar cells, semiconductor microelectronic integrated circuits, micro-electro-mechanical systems (MEMS), optoelectronic devices (such as light-emitting diodes, lasers, photo detectors), data storage devices, etc.
摘要翻译：本公开提供可移动真空载体，其可以用于支撑否则对于运输和加工过于脆弱的薄基底。本公开涉及薄半导体衬底的处理，并且特别适用于光伏太阳能电池，半导体微电子集成电路，微电子机械系统（MEMS），光电子器件（例如发光二极管，激光器，照片检测器），数据存储设备等

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