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1. 发明授权

US08946547B2 Backplane reinforcement and interconnects for solar cells 有权
标题翻译：太阳能电池背板加固和互连
公开(公告)号：US08946547B2
公开(公告)日：2015-02-03
申请号：US13204626
申请日：2011-08-05
申请人： Mehrdad M. Moslehi , David Xuan-Qi Wang , Karl-Josef Kramer , Sean M. Seutter , Sam Tone Tor , Anthony Calcaterra
发明人： Mehrdad M. Moslehi , David Xuan-Qi Wang , Karl-Josef Kramer , Sean M. Seutter , Sam Tone Tor , Anthony Calcaterra
IPC分类号： H01L31/00 , H01L31/05 , H01L31/0224
CPC分类号： H01L31/022458 , H01L31/02008 , H01L31/02013 , H01L31/022441 , H01L31/028 , H01L31/0516 , H01L31/0682 , H01L31/1804 , H01L31/1892 , Y02E10/50
摘要： Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, forming electrically conductive emitter plugs and base plugs on the interdigitated pattern, and attaching a backplane having a second interdigitated pattern of base electrodes and emitter electrodes at the conductive emitter and base plugs to form electrical interconnects.
摘要翻译：描述了提供太阳能电池基板加强和电互连的背接触太阳能电池的背板的制造方法和结构。该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图案，在交叉图案上形成导电发射器插头和基座插头，并且附接具有第二互补图案的基极和发射极的背板在导电发射器和基座插头上形成电互连。

2. 发明授权

US08664737B2 Three-dimensional semiconductor template for making high efficiency thin-film solar cells 有权
标题翻译：制造高效薄膜太阳能电池的三维半导体模板
公开(公告)号：US08664737B2
公开(公告)日：2014-03-04
申请号：US13345935
申请日：2012-01-09
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： H01L31/0236
CPC分类号： H01L31/0236 , H01L21/3065 , H01L29/045 , H01L29/0657 , H01L31/022425 , H01L31/02363 , H01L31/035281 , H01L31/056 , H01L31/068 , H01L31/18 , H01L31/1804 , H01L31/182 , H01L31/1892 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10T117/1092
摘要： A semiconductor template having a top surface aligned along a (100) crystallographic orientation plane and an inverted pyramidal cavity defined by a plurality of walls aligned along a (111) crystallographic orientation plane. A method for manufacturing a semiconductor template by selectively removing silicon material from a silicon template to form a top surface aligned along a (100) crystallographic plane of the silicon template and a plurality of walls defining an inverted pyramidal cavity each aligned along a (111) crystallographic plane of the silicon template.
摘要翻译：具有沿着（100）晶体取向平面排列的顶表面和由沿着（111）晶体取向平面排列的多个壁限定的倒置金字塔腔的半导体模板。一种用于通过从硅模板中选择性地去除硅材料以形成沿硅模板的（100）结晶平面排列的顶表面的多个壁，以及限定沿着（111）硅模板的晶体平面。

3. 发明申请

US20130280887A1 Method For Releasing a Thin-Film Substrate 审中-公开
标题翻译：剥离薄膜基板的方法
公开(公告)号：US20130280887A1
公开(公告)日：2013-10-24
申请号：US13657718
申请日：2012-10-22
申请人： Rafael Ricolcol , Joe Kramer , David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： Rafael Ricolcol , Joe Kramer , David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： H01L21/306 , H01L21/304
CPC分类号： H01L21/306 , H01L21/304 , H01L21/30608 , H01L21/67086 , H01L21/76259 , H01L31/035281 , H01L31/068 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： The present disclosure relates to methods for selectively etching a porous semiconductor layer to separate a thin-film semiconductor substrate (TFSS) having planar or three-dimensional features from a corresponding semiconductor template. The method involves forming a conformal sacrificial porous semiconductor layer on a template. Next, a conformal thin film silicon substrate is formed on top of the porous silicon layer. The middle porous silicon layer is then selectively etched to separate the TFSS and semiconductor template. The disclosed advanced etching chemistries and etching methods achieve selective etching with minimal damage to the TFSS and template.
摘要翻译：本公开涉及用于选择性蚀刻多孔半导体层以从相应的半导体模板分离具有平面或三维特征的薄膜半导体衬底（TFSS）的方法。该方法包括在模板上形成共形牺牲多孔半导体层。接着，在多孔硅层的顶部形成保形薄膜硅衬底。然后选择性地蚀刻中间多孔硅层以分离TFSS和半导体模板。所公开的高级蚀刻化学和蚀刻方法实现选择性蚀刻，对TFSS和模板的损害最小。

4. 发明申请

US20130141833A1 MOBILE ELECTROSTATIC CARRIERS FOR THIN WAFER PROCESSING 有权
标题翻译：用于薄膜加工的移动静电载体
公开(公告)号：US20130141833A1
公开(公告)日：2013-06-06
申请号：US13520139
申请日：2010-12-30
申请人： Mehrdad M. Moslehi , David Xuan-Qi Wang
发明人： Mehrdad M. Moslehi , David Xuan-Qi Wang
IPC分类号： H01L21/683 , H01L21/762 , H01L21/768
CPC分类号： H01L21/6833 , G03F7/70708 , H01L21/02164 , H01L21/0217 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/3065 , H01L21/683 , H01L21/6831 , H01L21/76251 , H01L21/76275 , H01L21/76281 , H01L21/76879 , H02N13/00 , Y02P80/30
摘要： In one embodiment, there is provided a carrier comprising a top semiconductor layer having isolated positive electrode regions and isolated negative electrode regions separated by a frontside trench through the top semiconductor layer at least to an underlying insulating layer positioned between the top semiconductor layer and a bottom semiconductor layer. A dielectric layer covers the top exposed surfaces of the carrier. Backside trenches through the bottom semiconductor layer at least to the insulating layer form isolated backside regions corresponding to the frontside positive and negative electrode regions. Backside contacts positioned on the bottom semiconductor layer and coupled to the positive and negative electrode regions allow for the electric charging of the frontside electrode regions.
摘要翻译：在一个实施例中，提供了一种载体，其包括顶部半导体层，该顶部半导体层具有隔离的正电极区域和隔离的负电极区域，所述隔离的负电极区域通过顶部半导体层至少分离到位于顶部半导体层和底部半导体层。电介质层覆盖载体的顶部暴露表面。至少通过底部半导体层的背面沟槽至绝缘层形成对应于正面正极和负极区域的隔离的背侧区域。位于底部半导体层上并且耦合到正极和负极区域的背面触点允许前侧电极区域的电荷。

5. 发明授权

US08294026B2 High-efficiency thin-film solar cells 有权
标题翻译：高效薄膜太阳能电池
公开(公告)号：US08294026B2
公开(公告)日：2012-10-23
申请号：US12618668
申请日：2009-11-13
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/0236 , H01L21/3065 , H01L29/045 , H01L29/0657 , H01L31/022425 , H01L31/02363 , H01L31/035281 , H01L31/056 , H01L31/068 , H01L31/18 , H01L31/1804 , H01L31/182 , H01L31/1892 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10T117/1092
摘要： A three-dimensional solar cell comprising a semiconductor substrate with an inverted pyramidal cavity, emitter metallization regions on ridges on the surface of the semiconductor substrate which define an opening of the inverted pyramidal cavity, and base metallization regions on a region which form the apex of the inverted pyramidal cavity. A method for fabricating a three-dimensional thin-film solar cell from an inverted pyramidal three-dimensional thin-film silicon substrate by doping ridges on the surface of the semiconductor substrate which define an opening of an inverted pyramidal cavity on the substrate to form an emitter region, and doping a region which forms the apex of the inverted pyramidal cavity to form a base region. Adding a surface passivation layer to the surface of the substrate. Selectively etching the passivation layer from the emitter region and base region. Then concurrently metallizing the emitter region and base region.
摘要翻译：一种三维太阳能电池，包括具有反锥体腔的半导体衬底，在半导体衬底的表面上的脊上的发射极金属化区域，其限定了倒锥形腔的开口，以及在形成顶角的区域上的基底金属化区域倒锥体腔。一种通过在半导体衬底的表面上掺杂脊来限定反向锥形三维薄膜硅衬底的三维薄膜太阳能电池的方法，该衬底限定了衬底上的反锥体腔的开口以形成并且掺杂形成倒锥体腔的顶点的区域以形成基区。将表面钝化层添加到基材的表面。从发射极区域和基极区域选择性地蚀刻钝化层。然后同时金属化发射极区域和基极区域。

6. 发明授权

US08293558B2 Method for releasing a thin-film substrate 有权
标题翻译：剥离薄膜基板的方法
公开(公告)号：US08293558B2
公开(公告)日：2012-10-23
申请号：US12719766
申请日：2010-03-08
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi , Rafael Ricolcol , Joe Kramer
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi , Rafael Ricolcol , Joe Kramer
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L31/18 , H01L21/30608
摘要： The present disclosure relates to methods for selectively etching a porous semiconductor layer to separate a thin-film semiconductor substrate (TFSS) having planar or three-dimensional features from a corresponding semiconductor template. The method involves forming a conformal sacrificial porous semiconductor layer on a template. Next, a conformal thin film silicon substrate is formed on top of the porous silicon layer. The middle porous silicon layer is then selectively etched to separate the TFSS and semiconductor template. The disclosed advanced etching chemistries and etching methods achieve selective etching with minimal damage to the TFSS and template.
摘要翻译：本公开涉及用于选择性蚀刻多孔半导体层以从相应的半导体模板分离具有平面或三维特征的薄膜半导体衬底（TFSS）的方法。该方法包括在模板上形成共形牺牲多孔半导体层。接着，在多孔硅层的顶部形成保形薄膜硅衬底。然后选择性地蚀刻中间多孔硅层以分离TFSS和半导体模板。所公开的高级蚀刻化学和蚀刻方法实现选择性蚀刻，对TFSS和模板的损害最小。

7. 发明申请

US20120125256A1 APPARATUS AND METHOD FOR REPEATEDLY FABRICATING THIN FILM SEMICONDUCTOR SUBSTRATES USING A TEMPLATE 审中-公开
标题翻译：使用模板重新制造薄膜半导体衬底的装置和方法
公开(公告)号：US20120125256A1
公开(公告)日：2012-05-24
申请号：US13209390
申请日：2011-08-13
申请人： Karl-Josef Kramer , Mehrdad M. Moslehi , David Xuan-Qi Wang , Subramanian Tamilmani , Sam Tone Tor , Rahim Kavari , Rafael Ricolcol , George Kamian , Joseph Leigh
发明人： Karl-Josef Kramer , Mehrdad M. Moslehi , David Xuan-Qi Wang , Subramanian Tamilmani , Sam Tone Tor , Rahim Kavari , Rafael Ricolcol , George Kamian , Joseph Leigh
IPC分类号： C30B25/02
CPC分类号： H01L31/1892 , H01L31/02363 , H01L31/035281 , H01L31/0392 , Y02E10/50
摘要： Mechanisms are disclosed by which a semiconductor wafer, silicon in some embodiments, is repeatedly used to serve as a template and carrier for fabricating high efficiency capable thin semiconductor solar cells substrates. Mechanisms that enable such repeated use of these templates at consistent quality and with high yield are disclosed.
摘要翻译：公开了一些机构，其中一些实施例中的半导体晶片，硅被重复地用作用于制造高效率的薄半导体太阳能电池基板的模板和载体。公开了能够以一致的质量和高产率重复使用这些模板的机制。

8. 发明授权

US08053665B2 Truncated pyramid structures for see-through solar cells 有权
标题翻译：用于透明太阳能电池的截断金字塔结构
公开(公告)号：US08053665B2
公开(公告)日：2011-11-08
申请号：US12626778
申请日：2009-11-27
申请人： Mehrdad M. Moslehi , David Xuan-Qi Wang
发明人： Mehrdad M. Moslehi , David Xuan-Qi Wang
IPC分类号： H01L31/042 , H01L21/306 , H01L31/18
CPC分类号： H01L31/0352 , H01L31/035281 , H01L31/04 , H01L31/18 , Y02E10/50
摘要： The present disclosure presents a partially-transparent (see-through) three-dimensional thin film solar cell (3-D TFSC) substrate. The substrate includes a plurality of unit cells. Each unit cell structure has the shape of a truncated pyramid, and its parameters may be varied to allow a desired portion of sunlight to pass through.
摘要翻译：本公开提供了部分透明（透明）三维薄膜太阳能电池（3-D TFSC）基板。基板包括多个单元电池。每个单元电池结构具有截头棱锥形状，并且其参数可以变化以允许期望的太阳光部分通过。

9. 发明申请

US20110021006A1 METHOD FOR RELEASING A THIN SEMICONDUCTOR SUBSTRATE FROM A REUSABLE TEMPLATE 有权
标题翻译：从可重复使用的模板中释放薄的半导体衬底的方法
公开(公告)号：US20110021006A1
公开(公告)日：2011-01-27
申请号：US12826641
申请日：2010-06-29
申请人： Mehrdad M. Moslehi , David Xuan-Qi Wang , Sam Tone Tor , Karl-Josef Kramer
发明人： Mehrdad M. Moslehi , David Xuan-Qi Wang , Sam Tone Tor , Karl-Josef Kramer
IPC分类号： H01L21/76 , B25J15/06 , H01L21/677
CPC分类号： H01L31/18 , H01L21/67092 , H01L21/6835 , H01L21/6838 , H01L21/76259 , H01L2924/19042 , Y10T29/53683 , Y10T279/11
摘要： The present disclosure relates to methods and apparatuses for releasing a thin semiconductor substrate from a reusable template. The method involves forming a mechanically weak layer conformally on a semiconductor template. Then forming a thin semiconductor substrate conformally on the mechanically weak layer. The thin semiconductor substrate, the mechanically weak layer and the template forming a wafer. Then defining the border of the thin-film semiconductor substrate to be released by exposing the peripheral of the mechanically weak layer. Then releasing the thin-film semiconductor substrate by applying a controlled air flow parallel to said mechanically weak layer wherein the controlled air flow separates the thin semiconductor substrate and template according to lifting forces.
摘要翻译：本公开涉及用于从可重用模板中释放薄半导体衬底的方法和装置。该方法包括在半导体模板上共形形成机械弱层。然后在机械弱层上共形成薄的半导体衬底。薄半导体衬底，机械弱层和模板形成晶片。然后通过暴露机械薄弱层的周边来限定待释放的薄膜半导体衬底的边界。然后通过施加平行于所述机械弱层的受控空气流来释放薄膜半导体衬底，其中受控空气流根据提升力分离薄半导体衬底和模板。

10. 发明授权

US07745313B2 Substrate release methods and apparatuses 有权
标题翻译：底物释放方法和装置
公开(公告)号：US07745313B2
公开(公告)日：2010-06-29
申请号：US12473811
申请日：2009-05-28
申请人： David Xuan-Qi Wang , Mehrdad M. Moslehi
发明人： David Xuan-Qi Wang , Mehrdad M. Moslehi
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L31/18 , H01L21/76259
摘要： The present disclosure relates to methods and apparatuses for fracturing or breaking a buried porous semiconductor layer to separate a 3-D thin-film semiconductor semiconductor (TFSS) substrate from a 3-D crystalline semiconductor template. The method involves forming a sacrificial porous semiconductor layer on the 3-D features of the template. A variety of techniques may be used to fracture and release the mechanically weak porous semiconductor layer without damaging the TFSS substrate layer or the template layer such as pressure variations, thermal stress generation, and mechanical bending. The methods also allow for processing three dimensional features not possible with current separation processes. Optional cleaning and final lift-off steps may be performed as part of the release step or after the release step.
摘要翻译：本公开内容涉及用于将埋入的多孔半导体层断裂或断裂以从3-D晶体半导体模板分离3-D薄膜半导体（TFSS）衬底的方法和装置。该方法包括在模板的3-D特征上形成牺牲多孔半导体层。可以使用各种技术来破坏和释放机械上的弱多孔半导体层，而不会损坏TFSS衬底层或模板层，例如压力变化，热应力产生和机械弯曲。这些方法还允许处理当前分离过程不可能的三维特征。可以在释放步骤的一部分或释放步骤之后执行可选的清洁和最终剥离步骤。

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