专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US06964838B2 Positive photoresist composition 失效
标题翻译：正光致抗蚀剂组合物
公开(公告)号：US06964838B2
公开(公告)日：2005-11-15
申请号：US10035137
申请日：2002-01-04
申请人： Masaki Kurihara , Takako Suzuki , Kenji Maruyama , Satoshi Niikura , Kousuke Doi
发明人： Masaki Kurihara , Takako Suzuki , Kenji Maruyama , Satoshi Niikura , Kousuke Doi
IPC分类号： G03F7/039 , G03F7/022 , G03F7/023
CPC分类号： G03F7/022 , G03F7/0226
摘要： A composition includes (A) an alkali-soluble resin, (B) a quinonediazide ester of a compound represented by the following formula: and (C) a compound represented by the following formula: This composition is a positive photoresist composition that is excellent in sensitivity and definition and causes less shrink.
摘要翻译：组合物包括（A）碱溶性树脂，（B）由下式表示的化合物的醌二叠氮化物：（C）由下式表示的化合物：该组合物是阳性光致抗蚀剂组合物，敏感性和定义，并且减少收缩。

42. 发明申请

US20050244740A1 Chemically amplified positive photo resist composition and method for forming resist pattern 有权
标题翻译：化学放大的正光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20050244740A1
公开(公告)日：2005-11-03
申请号：US10522036
申请日：2004-05-19
申请人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
发明人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
IPC分类号： G03C1/492 , G03F7/039
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.
摘要翻译：本发明提供了作为瓶中的抗蚀剂溶液的储存稳定性优异的化学增幅型正性光致抗蚀剂组合物。将酚醛清漆树脂或羟基苯乙烯类树脂与交联剂反应，得到轻微碱溶性或碱不溶性树脂，其具有在酸存在下在碱溶液中的溶解度增强的性质，然后将其溶解于有机溶剂与（B）在辐射照射下产生酸的化合物一起获得化学扩增型正性光致抗蚀剂组合物，其中酸成分的含量为10ppm以下。

43. 发明授权

US5737239A Shaking test method and system for a structure 失效
标题翻译：振动测试方法和系统的结构
公开(公告)号：US5737239A
公开(公告)日：1998-04-07
申请号：US597405
申请日：1996-02-08
申请人： Toshihiko Horiuchi , Hiroaki Kasai , Masaki Kurihara , Takao Konno
发明人： Toshihiko Horiuchi , Hiroaki Kasai , Masaki Kurihara , Takao Konno
IPC分类号： G01H13/00 , G01H11/00
CPC分类号： G01H13/00
摘要： A shaking test system for testing a structure including a shaking device for shaking the structure, measuring devices mounted on the shaking device for shaking the structure, external signal input device for inputting data indicative of external force for shaking the structure, as well as other calculating arrangements. The shaking test system permits the setting of a large time interval of a shaking test by converting natural modes of vibration expressed by a second-order differential equation, namely second-order lag system of a vibration differential equation into a first-order lag system or (O)th order lag system for short period mode.
摘要翻译：一种用于测试结构的振动测试系统，包括用于摇动结构的振动装置，用于振动结构的安装在摇动装置上的测量装置，用于输入指示用于振动结构的外力的数据的外部信号输入装置，以及其他计算安排摇动测试系统允许通过将由二阶微分方程表示的自然振动模式（即振动微分方程的二阶滞后系统）转换成一阶滞后系统来设定振动测试的较大时间间隔，或（O）阶滞后系统。

44. 外观设计

USD291442S Computer 失效
公开(公告)号：USD291442S
公开(公告)日：1987-08-18
申请号：US653800
申请日：1984-09-24
申请人： Masaki Kurihara
设计人： Masaki Kurihara

45. 外观设计

USD281426S Keyboard for an electronic computer 失效
公开(公告)号：USD281426S
公开(公告)日：1985-11-19
申请号：US499698
申请日：1983-05-31
申请人： Masaki Kurihara , Masahiko Mizuno
设计人： Masaki Kurihara , Masahiko Mizuno

46. 发明授权

US08581976B2 Method and apparatus for reviewing defects of semiconductor device 有权
标题翻译：检查半导体器件缺陷的方法和装置
公开(公告)号：US08581976B2
公开(公告)日：2013-11-12
申请号：US12986475
申请日：2011-01-07
申请人： Masaki Kurihara , Toshifumi Honda , Ryo Nakagaki
发明人： Masaki Kurihara , Toshifumi Honda , Ryo Nakagaki
IPC分类号： H04N7/18
CPC分类号： G06T7/001 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/2817
摘要： A method and apparatus for reviewing defects of a semiconductor device is provided which involves detecting a defect on a SEM image taken at low magnification, and reviewing the defect on a SEM image taken at high magnification, and which can review a lot of defects in a short period of time thereby to improve the efficiency of defect review. In the present invention, the method for reviewing defects of a semiconductor device includes the steps of obtaining an image including a defect on the semiconductor device detected by a detection device by use of a scanning electron microscope at a first magnification, making a reference image from the image including the defect obtained at the first magnification, detecting the defect by comparing the image including the defect obtained at the first magnification to the reference image made from the image including the defect at the first magnification, and taking an image of the detected defect at a second magnification that is larger than the first magnification.
摘要翻译：提供了一种用于检查半导体器件缺陷的方法和装置，其涉及检测在低放大倍率下拍摄的SEM图像上的缺陷，并且以高倍放大倍数检查SEM图像上的缺陷，并且可以检查在短时间内可以提高缺陷检查的效率。在本发明中，用于检查半导体器件的缺陷的方法包括以下步骤：通过使用扫描电子显微镜以第一放大率获得由检测装置检测的半导体器件上的缺陷的图像，从而所述图像包括在第一放大处获得的缺陷，通过将包括在第一放大获得的缺陷的图像与由包含第一放大率的缺陷构成的图像进行比较的图像进行比较来检测缺陷，并且获取检测到的缺陷的图像在大于第一放大率的第二放大倍率下。

47. 发明申请

US20110268345A1 DEFECT CLASSIFIER USING CLASSIFICATION RECIPE BASED ON CONNECTION BETWEEN RULE-BASED AND EXAMPLE-BASED CLASSIFIERS 有权
标题翻译：基于基于规则和基于实例的分类器之间的连接使用分类协议的缺陷分类器
公开(公告)号：US20110268345A1
公开(公告)日：2011-11-03
申请号：US13183488
申请日：2011-07-15
申请人： Ryo NAKAGAKI , Masaki Kurihara , Toshifumi Honda
发明人： Ryo NAKAGAKI , Masaki Kurihara , Toshifumi Honda
IPC分类号： G06K9/00
CPC分类号： G06T7/0006 , G06K9/6256 , G06T7/0004 , G06T7/001 , G06T2207/10056 , G06T2207/10061 , G06T2207/30148
摘要： In apparatuses for automatically acquiring and also for automatically classifying images of defects present on a sample such as a semiconductor wafer, a classifying system is provided which are capable of readily accepting even such a case that a large number of classification classes are produced based upon a request issued by a user, and also even such a case that a basis of the classification class is changed in a high frequency. When the user defines the classification classes, a device for designating attributes owned by the respective classification classes is provided. The classifying system automatically changes a connecting mode between an internally-provided rule-based classifier and an example-based classifier, so that such a classifying system which is fitted to the classification basis of the user is automatically constructed.
摘要翻译：在用于自动获取并且还自动分类诸如半导体晶片的样本上存在的缺陷的图像的设备中，提供了能够容易地接受甚至基于以下情况产生大量分类等级的情况的分类系统由用户发出的请求，甚至是分类等级的基础被高频地改变的情况。当用户定义分类类时，提供用于指定由各个分级类所拥有的属性的设备。分类系统自动地在内部提供的基于规则的分类器和基于示例的分类器之间改变连接模式，从而自动构建适合用户分类基础的这样的分类系统。

48. 发明申请

US20110165503A1 METHOD OF GENERATING PHOTOMASK DATA, METHOD OF FABRICATING PHOTOMASK, MEMORY MEDIUM STORING PROGRAM FOR GENERATING PHOTOMASK DATA, METHOD OF MANUFACTURING SOLID-STATE IMAGE SENSOR HAVING MICROLENS ARRAY AND METHOD OF MANUFACTURING MICROLENS ARRAY 有权
标题翻译：产生光子数据的方法，制造光电子能力的方法，用于生成光电子数据的存储介质存储程序，制造具有微阵列的固态图像传感器的方法和制造微阵列阵列的方法
公开(公告)号：US20110165503A1
公开(公告)日：2011-07-07
申请号：US12980460
申请日：2010-12-29
申请人： Masaki Kurihara , Kyouhei Watanabe , Shingo Kitamura
发明人： Masaki Kurihara , Kyouhei Watanabe , Shingo Kitamura
IPC分类号： G03F1/00 , G03F7/20 , G06F17/50
CPC分类号： G03F7/0005 , B29D11/00298 , G03F1/50 , H01L27/14685
摘要： A method of generating photomask data for fabricating a microlens array, the photomask having a microlens pattern including light-shielding portions and non-light-shielding portions, in each rectangular region including a surrounding region having four sides of the rectangular region as outer edges and a primary region having boundaries that are inner edges of the surrounding region, the surrounding region being configured by four strip regions each including one of the four sides as its part, and a width between the outer edge and the inner edge being not more than 1/2 of a wavelength of exposure light, includes determining a layout of light-shielding portions and non-light-shielding portions in the surrounding region so that a density of light-shielding portions is set to fall within a range from 0% to 15%.
摘要翻译：一种生成用于制造微透镜阵列的光掩模数据的方法，所述光掩模具有包括遮光部分和非遮光部分的微透镜图案，每个矩形区域包括具有作为外边缘的矩形区域的四边的周边区域，具有作为所述周边区域的内缘的边界的主区域，所述周边区域由四个带状区域构成，所述四个区域各自包括所述四个边中的一个作为其一部分，并且所述外边缘和所述内边缘之间的宽度不大于1 曝光光的波长/ 2包括确定周围区域中的遮光部分和非遮光部分的布局，使得遮光部分的密度设定在0％至15的范围内％。

49. 发明授权

US07873202B2 Method and apparatus for reviewing defects of semiconductor device 有权
标题翻译：检查半导体器件缺陷的方法和装置
公开(公告)号：US07873202B2
公开(公告)日：2011-01-18
申请号：US11488636
申请日：2006-07-19
申请人： Masaki Kurihara , Toshifumi Honda , Ryo Nakagaki
发明人： Masaki Kurihara , Toshifumi Honda , Ryo Nakagaki
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06T2207/30148 , H01J37/222 , H01J37/28 , H01J2237/2817
摘要： An apparatus for reviewing defects of a semiconductor device is provided to review a lot of defects in a short period of time thereby to improve the efficiency of defect review. A method for reviewing defects of a semiconductor device includes obtaining an image including a defect on the semiconductor device detected by a detection device by use of a scanning electron microscope at a first magnification, making a reference image from the image including the defect obtained at the first magnification, detecting the defect by comparing the image including the defect obtained at the first magnification to the reference image made from the image including the defect at the first magnification, and taking an image of the detected defect at a second magnification that is larger than the first magnification.
摘要翻译：提供一种用于检查半导体器件的缺陷的装置，以在短时间内检查大量缺陷，从而提高缺陷检查的效率。一种用于检查半导体器件的缺陷的方法包括：利用扫描电子显微镜以第一倍率获得包括由检测装置检测到的半导体器件的图像的图像，从包括在第第一放大率，通过将包括在第一放大率获得的缺陷的图像与由包括第一放大率的缺陷构成的图像制成的参考图像进行比较来检测缺陷，并且以大于第二倍率的第二倍率拍摄检测到的缺陷的图像第一放大。

50. 发明申请

US20100066876A1 PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM 失效
标题翻译：光电转换器和成像系统
公开(公告)号：US20100066876A1
公开(公告)日：2010-03-18
申请号：US12555086
申请日：2009-09-08
申请人： Masaki Kurihara
发明人： Masaki Kurihara
IPC分类号： H04N5/335 , H01L31/0232 , H01L31/0216
CPC分类号： H04N5/2254 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14685
摘要： A photoelectric conversion device comprises a semiconductor substrate; a multilayer wiring structure; a first color filter layer including a plurality of first color filters which are arranged above a first photoelectric conversion units to allow light of a first color to enter the first photoelectric conversion units, each first color filter being connected to an adjacent first color filter; and a second color filter layer including a plurality of second color filters which are arranged above a second photoelectric conversion units to allow light of a second color to enter the second photoelectric conversion units, wherein the multilayer wiring structure including an uppermost wiring layer which defines the aperture regions corresponding to the respective photoelectric conversion units, and an insulation film arranged to cover the uppermost wiring layer, and wherein the first color filter layer and the second color filter layer are arranged to cover the insulation film.
摘要翻译：光电转换装置包括半导体衬底; 多层布线结构; 第一滤色器层，包括多个第一滤色器，其布置在第一光电转换单元上方，以允许第一颜色的光进入第一光电转换单元，每个第一滤色器连接到相邻的第一滤色器; 以及第二滤色器层，其包括多个第二滤色器，所述第二滤色器布置在第二光电转换单元的上方，以允许第二颜色的光进入第二光电转换单元，其中所述多层布线结构包括最上布线层，对应于各个光电转换单元的孔径区域以及布置成覆盖最上层布线层的绝缘膜，并且其中第一滤色器层和第二滤色器层布置成覆盖绝缘膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式